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1. 发明申请

US20120160801A1 Superfine Pattern Mask, Method for Production Thereof, and Method Employing the Same for forming Superfine Pattern 有权
标题翻译：超细纹图案面膜，其制造方法以及使用其形成超细纹图案的方法
公开(公告)号：US20120160801A1
公开(公告)日：2012-06-28
申请号：US12978740
申请日：2010-12-27
申请人： Munirathna Padmanaban , Jin Li , Toru Koike , Yusuke Takano , Kazunori Kurosawa
发明人： Munirathna Padmanaban , Jin Li , Toru Koike , Yusuke Takano , Kazunori Kurosawa
IPC分类号： B05D5/02 , C08L83/06
CPC分类号： C09D183/16 , C08G77/12 , C08G77/62 , G03F7/405 , H01L21/0337 , H01L21/0338 , C08L83/00
摘要： There are provided a composition for forming a superfine pattern and a method employing the same for forming a superfine pattern. The composition enables to simply produce a superfine pattern with high mass productivity.The composition comprises perhydropolysilazane (I), silicon-containing polymer (II) having a hydrocarbon group, and a solvent. The mixture of those polymers contains silicon-hydrogen bonds and silicon-hydrocarbon group bonds in such amounts that the number of the silicon-hydrocarbon group bonds is in a ratio of 1 to 44% based on the total number of the silicon-hydrogen bonds and the silicon-hydrocarbon group bonds. The composition is applied on a resist pattern to form a spacer formed of the composition on the side wall of the ridges in the pattern, and then the spacer or a resin layer disposed around the spacer is used as a mask to form a superfine pattern.
摘要翻译：提供了用于形成超细纹图案的组合物和使用该组合物形成超细纹图案的方法。该组合物能够简单地产生具有高批量生产率的超细纹理。组合物包含全氢聚硅氮烷（I），具有烃基的含硅聚合物（II）和溶剂。这些聚合物的混合物含有硅 - 氢键和硅 - 烃基键，其量使得硅 - 烃基键的数量相对于硅 - 氢键的总数为1〜44％，硅烃基键合。将该组合物施加在抗蚀剂图案上以在图案的脊的侧壁上形成由该组合物形成的间隔物，然后将间隔物或设置在间隔物周围的树脂层用作掩模以形成超细纹图案。

2. 发明授权

US08796398B2 Superfine pattern mask, method for production thereof, and method employing the same for forming superfine pattern 有权
标题翻译：超细纹图案掩模，其制造方法，以及使用其形成超细纹图案的方法
公开(公告)号：US08796398B2
公开(公告)日：2014-08-05
申请号：US12978740
申请日：2010-12-27
申请人： Munirathna Padmanaban , Jin Li , Toru Koike , Yusuke Takano , Kazunori Kurosawa
发明人： Munirathna Padmanaban , Jin Li , Toru Koike , Yusuke Takano , Kazunori Kurosawa
IPC分类号： C08L83/16
CPC分类号： C09D183/16 , C08G77/12 , C08G77/62 , G03F7/405 , H01L21/0337 , H01L21/0338 , C08L83/00
摘要： There are provided a composition for forming a superfine pattern and a method employing the same for forming a superfine pattern. The composition enables to simply produce a superfine pattern with high mass productivity.The composition comprises perhydropolysilazane (I), silicon-containing polymer (II) having a hydrocarbon group, and a solvent. The mixture of those polymers contains silicon-hydrogen bonds and silicon-hydrocarbon group bonds in such amounts that the number of the silicon-hydrocarbon group bonds is in a ratio of 1 to 44% based on the total number of the silicon-hydrogen bonds and the silicon-hydrocarbon group bonds. The composition is applied on a resist pattern to form a spacer formed of the composition on the side wall of the ridges in the pattern, and then the spacer or a resin layer disposed around the spacer is used as a mask to form a superfine pattern.
摘要翻译：提供了用于形成超细纹图案的组合物和使用该组合物形成超细纹图案的方法。该组合物能够简单地产生具有高批量生产率的超细纹理。组合物包含全氢聚硅氮烷（I），具有烃基的含硅聚合物（II）和溶剂。这些聚合物的混合物含有硅 - 氢键和硅 - 烃基键，其量使得硅 - 烃基键的数量相对于硅 - 氢键的总数为1〜44％，硅烃基键合。将该组合物施加在抗蚀剂图案上以在图案的脊的侧壁上形成由该组合物形成的间隔物，然后将隔离物或设置在间隔物周围的树脂层用作掩模以形成超细纹图案。

3. 发明授权

US08084186B2 Hardmask process for forming a reverse tone image using polysilazane 有权
标题翻译：使用聚硅氮烷形成反向色调图像的硬掩模工艺
公开(公告)号：US08084186B2
公开(公告)日：2011-12-27
申请号：US12368720
申请日：2009-02-10
申请人： David Abdallah , Ralph R. Dammel , Yusuke Takano , Jin Li , Kazunori Kurosawa
发明人： David Abdallah , Ralph R. Dammel , Yusuke Takano , Jin Li , Kazunori Kurosawa
IPC分类号： G03F7/00 , G03F7/004 , G03F7/26 , G03F7/40
CPC分类号： G03F7/40 , H01L21/02123 , H01L21/02222 , H01L21/02282 , H01L21/0234 , H01L21/0337 , H01L21/31138 , H01L21/3125 , Y10T428/24802
摘要： The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present.The invention further relates to a product of the above process and to a microelectronic device made from using the above process.
摘要翻译：本发明涉及一种在装置上形成反向色调图像的方法，包括： a）在衬底上形成可选的吸收有机底层; b）在底层上形成光致抗蚀剂的涂层; c）形成光致抗蚀剂图案; d）从聚硅氮烷涂料组合物在光致抗蚀剂图案上形成聚硅氮烷涂层，其中聚硅氮烷涂层比光致抗蚀剂图案厚，此外聚硅氮烷涂层组合物包含硅/氮聚合物和有机涂层溶剂; e）蚀刻聚硅氮烷涂层以除去聚硅氮烷涂层至少高达光致抗蚀剂顶部的水平，使得光刻胶图案显露出来; 以及f）干蚀刻以除去光致抗蚀剂下面的光致抗蚀剂和底层，从而在存在光致抗蚀剂图案的下方形成开口。本发明还涉及上述方法的产品和使用上述方法制造的微电子器件。

4. 发明申请

US20100203299A1 Hardmask Process for Forming a Reverse Tone Image Using Polysilazane 有权
标题翻译：使用聚硅氮烷形成反向色调图像的硬掩模工艺
公开(公告)号：US20100203299A1
公开(公告)日：2010-08-12
申请号：US12368720
申请日：2009-02-10
申请人： David Abdallah , Ralph R. Dammel , Yusuke Takano , Jin Li , Kazunori Kurosawa
发明人： David Abdallah , Ralph R. Dammel , Yusuke Takano , Jin Li , Kazunori Kurosawa
IPC分类号： B32B3/10 , G03F7/20
CPC分类号： G03F7/40 , H01L21/02123 , H01L21/02222 , H01L21/02282 , H01L21/0234 , H01L21/0337 , H01L21/31138 , H01L21/3125 , Y10T428/24802
摘要： The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present.The invention further relates to a product of the above process and to a microelectronic device made from using the above process.
摘要翻译：本发明涉及一种在装置上形成反向色调图像的方法，包括： a）在衬底上形成任选的吸收有机底层; b）在底层上形成光致抗蚀剂的涂层; c）形成光致抗蚀剂图案; d）从聚硅氮烷涂料组合物在光致抗蚀剂图案上形成聚硅氮烷涂层，其中聚硅氮烷涂层比光致抗蚀剂图案厚，此外聚硅氮烷涂层组合物包含硅/氮聚合物和有机涂层溶剂; e）蚀刻聚硅氮烷涂层以除去聚硅氮烷涂层至少高达光致抗蚀剂顶部的水平，使得光刻胶图案显露出来; 以及f）干蚀刻以除去光致抗蚀剂下面的光致抗蚀剂和底层，从而在存在光致抗蚀剂图案的下方形成开口。本发明还涉及上述方法的产品和使用上述方法制造的微电子器件。

5. 发明授权

US08501394B2 Superfine-patterned mask, method for production thereof, and method employing the same for forming superfine-pattern 有权
标题翻译：超细图形掩模，其制造方法以及使用该掩模形成超细图案的方法
公开(公告)号：US08501394B2
公开(公告)日：2013-08-06
申请号：US12864529
申请日：2009-01-27
申请人： Yusuke Takano , Jin Li , Tomonori Ishikawa , Go Noya
发明人： Yusuke Takano , Jin Li , Tomonori Ishikawa , Go Noya
IPC分类号： G03F7/26
CPC分类号： H01L21/0337 , C09D183/14 , C09D183/16 , G03F7/40 , H01L21/0274 , H01L21/0338 , H01L21/31144 , Y10T428/24479
摘要： There is provided a method for forming a superfine pattern, which can simply produce a superfine pattern with high mass productivity.The method comprises the steps of forming a first convex pattern, on a film to be treated, forming a spacer formed of a silazane-containing resin composition on the side wall of the convexes constituting the first convex pattern, and forming a superfine pattern using as a mask the spacer or a resin layer disposed around the spacer. The spacer is formed by curing an evenly coated resin composition only in its part around the first convex pattern. According to this method for pattern formation, unlike the conventional method, a superfine pattern can be formed.
摘要翻译：提供了一种形成超细图案的方法，其可以简单地产生具有高质量生产率的超细图案。该方法包括以下步骤：在待处理的膜上形成第一凸起图案，在构成第一凸起图案的凸起的侧壁上形成由含硅氮烷的树脂组合物形成的间隔物，并使用如下方式形成超细图案掩模隔离物或设置在间隔物周围的树脂层。间隔物通过仅在其第一凸起图案周围的部分固化均匀涂覆的树脂组合物而形成。根据这种图案形成方法，与传统方法不同，可以形成超细纹图案。

6. 发明申请

US20100308015A1 SUPERFINE-PATTERNED MASK, METHOD FOR PRODUCTION THEREOF, AND METHOD EMPLOYING THE SAME FOR FORMING SUPERFINE-PATTERN 有权
标题翻译：超级图案掩模，其生产方法和使用其形成超级图案的方法
公开(公告)号：US20100308015A1
公开(公告)日：2010-12-09
申请号：US12864529
申请日：2009-01-27
申请人： Yusuke Takano , Jin Li , Tomonori Ishikawa , Go Noya
发明人： Yusuke Takano , Jin Li , Tomonori Ishikawa , Go Noya
IPC分类号： C23F1/00 , B32B3/30 , B05D3/10
CPC分类号： H01L21/0337 , C09D183/14 , C09D183/16 , G03F7/40 , H01L21/0274 , H01L21/0338 , H01L21/31144 , Y10T428/24479
摘要： There is provided a method for forming a superfine pattern, which can simply produce a superfine pattern with high mass productivity.The method comprises the steps of forming a first convex pattern, on a film to be treated, forming a spacer formed of a silazane-containing resin composition on the side wall of the convexes constituting the first convex pattern, and forming a superfine pattern using as a mask the spacer or a resin layer disposed around the spacer. The spacer is formed by curing an evenly coated resin composition only in its part around the first convex pattern. According to this method for pattern formation, unlike the conventional method, a superfine pattern can be formed.
摘要翻译：提供了一种形成超细图案的方法，其可以简单地产生具有高质量生产率的超细图案。该方法包括以下步骤：在待处理的膜上形成第一凸起图案，在构成第一凸起图案的凸起的侧壁上形成由含硅氮烷的树脂组合物形成的间隔物，并使用如下方式形成超细图案掩模隔离物或设置在间隔物周围的树脂层。间隔物通过仅在其第一凸起图案周围的部分固化均匀涂覆的树脂组合物而形成。根据这种图案形成方法，与传统方法不同，可以形成超细纹图案。

7. 外观设计

USD879596S1 Seamless hook 有权
公开(公告)号：USD879596S1
公开(公告)日：2020-03-31
申请号：US29714553
申请日：2019-11-25
申请人： Jin Li
设计人： Jin Li
摘要： FIG. 1 is a perspective view of a seamless hook showing my new design;
FIG. 2 is another perspective view thereof;
FIG. 3 is a front elevational view thereof;
FIG. 4 is a rear elevational view thereof;
FIG. 5 is a left side elevational view thereof;
FIG. 6 is a right side elevational view thereof;
FIG. 7 is a top plan view thereof; and,
FIG. 8 is a bottom plan view thereof.

8. 发明授权

US09894353B2 Method and apparatus for encoding and decoding video using intra prediction mode dependent adaptive quantization matrix 有权
公开(公告)号：US09894353B2
公开(公告)日：2018-02-13
申请号：US14125753
申请日：2012-06-12
申请人： Jin Li , Chong Soon Lim , Viktor Wahadaniah , Sue Mon Thet Naing , Hai Wei Sun , Hisao Sasai , Takahiro Nishi , Youji Shibahara , Toshiyasu Sugio , Kyoko Tanikawa , Toru Matsunobu
发明人： Jin Li , Chong Soon Lim , Viktor Wahadaniah , Sue Mon Thet Naing , Hai Wei Sun , Hisao Sasai , Takahiro Nishi , Youji Shibahara , Toshiyasu Sugio , Kyoko Tanikawa , Toru Matsunobu
IPC分类号： H04N19/129 , H04N19/124 , H04N19/159 , H04N19/11 , H04N19/126 , H04N19/157 , H04N19/176 , H04N19/625
CPC分类号： H04N19/157 , H04N19/11 , H04N19/124 , H04N19/126 , H04N19/129 , H04N19/159 , H04N19/176 , H04N19/625
摘要： A method of encoding video using intra prediction mode dependent quantization matrix includes: calculating an array of quantizers for each size of block unit (100); encoding the arrays of quantizers into header of compressed video stream (102); selecting one scanning order based on a selected intra prediction mode among a plurality of scanning orders (112); scanning the array of quantizers to obtain a block of quantizers based on the selected scanning order (114).

9. 发明授权

US09639543B2 Adaptive index for data deduplication 有权
公开(公告)号：US09639543B2
公开(公告)日：2017-05-02
申请号：US12979681
申请日：2010-12-28
申请人： Jin Li , Sudipta Sengupta
发明人： Jin Li , Sudipta Sengupta
IPC分类号： G06F17/30
CPC分类号： G06F17/30097 , G06F17/3007 , G06F17/30159
摘要： The subject disclosure is directed towards a data deduplication technology in which a hash index service's index and/or indexing operations are adaptable to balance deduplication performance savings, throughput and resource consumption. The indexing service may employ hierarchical chunking using different levels of granularity corresponding to chunk size, a sampled compact index table that contains compact signatures for less than all of the hash index's (or subspace's) hash values, and/or selective subspace indexing based on similarity of a subspace's data to another subspace's data and/or to incoming data chunks.

10. 发明授权

US09154788B2 Image coding method and image decoding method 有权
标题翻译：图像编码方法和图像解码方法
公开(公告)号：US09154788B2
公开(公告)日：2015-10-06
申请号：US13817004
申请日：2012-05-31
申请人： Viktor Wahadaniah , Chong Soon Lim , Sue Mon Thet Naing , Jin Li , Haiwei Sun , Takahiro Nishi , Hisao Sasai , Youji Shibahara , Kyoko Tanikawa , Toshiyasu Sugio , Toru Matsunobu
发明人： Viktor Wahadaniah , Chong Soon Lim , Sue Mon Thet Naing , Jin Li , Haiwei Sun , Takahiro Nishi , Hisao Sasai , Youji Shibahara , Kyoko Tanikawa , Toshiyasu Sugio , Toru Matsunobu
IPC分类号： H04N7/12 , H04N19/50 , H04N19/176 , H04N19/102 , H04N19/593 , H04N19/117 , H04N19/136 , H04N19/186 , H04N19/182 , H04N19/59
CPC分类号： H04N19/50 , H04N19/102 , H04N19/117 , H04N19/136 , H04N19/176 , H04N19/182 , H04N19/186 , H04N19/59 , H04N19/593
摘要： An image coding method includes obtaining image format information, determining a subsampling method for a luminance signal, storing the subsampling method in a memory, obtaining the subsampling method from the memory, performing subsampling on a luminance signal of a surrounding pixel, calculating a parameter of the linear model using (i) the luminance signal that is subsampled and (ii) chrominance of the surrounding pixel, performing subsampling on the luminance signal of the current block to be coded, and calculating prediction chrominance of the current block to be coded using (i) the parameter of the linear model and (ii) the luminance signal that is subsampled.
摘要翻译：图像编码方法包括获得图像格式信息，确定用于亮度信号的子采样方法，将二次采样方法存储在存储器中，从存储器获取二次采样方法，对周围像素的亮度信号进行二次采样，计算参数所述线性模型使用（i）被二次采样的亮度信号和（ii）周围像素的色度，对要编码的当前块的亮度信号执行子采样，以及使用（ i）线性模型的参数和（ii）被二次采样的亮度信号。

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