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1. 发明授权

US08816312B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08816312B2
公开(公告)日：2014-08-26
申请号：US13824098
申请日：2011-09-20
申请人： Munehiro Tada , Makoto Miyamura , Hiromitsu Hada
发明人： Munehiro Tada , Makoto Miyamura , Hiromitsu Hada
IPC分类号： H01L29/00
CPC分类号： H01L45/04 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C13/04 , G11C2013/0073 , G11C2213/56 , G11C2213/73 , G11C2213/75 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/085 , H01L45/1233 , H01L45/146
摘要： A semiconductor device according to the present invention includes: an unit element which includes a first switch and a second switch, wherein each of the first switch and the second switch includes an electrical resistance changing layer whose state of electrical resistance is changed according to a polarity of an applied voltage, and each of the first switch and the second switch has two electrodes, and wherein one electrode of the first switch and one electrode of the second switch are connected each other to form a common node, and the other electrode of the first switch forms a first node, and the other electrode of the second switch forms a second node; a first wiring which is connected with the first node and forms a signal transmission line; and a second wiring which is connected with the second node and is connected with the first wiring through the unit element.
摘要翻译：根据本发明的半导体器件包括：单元，其包括第一开关和第二开关，其中第一开关和第二开关中的每一个包括电阻变化层，其电阻状态根据极性而改变并且第一开关和第二开关中的每一个具有两个电极，并且其中第一开关的一个电极和第二开关的一个电极彼此连接以形成公共节点，而另一个电极第一开关构成第一节点，第二开关的另一个电极形成第二节点; 第一布线，与第一节点连接并形成信号传输线; 以及与第二节点连接并且通过单元元件与第一布线连接的第二布线。

2. 发明授权

US08796659B2 Variable resistance element, semiconductor device including variable resistance element, and methods for manufacturing variable resistance element and semiconductor device 有权
标题翻译：可变电阻元件，包括可变电阻元件的半导体器件，以及用于制造可变电阻元件和半导体器件的方法
公开(公告)号：US08796659B2
公开(公告)日：2014-08-05
申请号：US13635858
申请日：2011-03-16
申请人： Munehiro Tada , Koichiro Okamoto , Toshitsugu Sakamoto , Hiromitsu Hada
发明人： Munehiro Tada , Koichiro Okamoto , Toshitsugu Sakamoto , Hiromitsu Hada
IPC分类号： H01L29/04
CPC分类号： H01L51/0094 , C23C16/0272 , C23C16/401 , C23C16/50 , C23C16/515 , C23C16/52 , H01L27/2463 , H01L45/1233 , H01L45/14 , H01L45/1616 , H01L51/0591
摘要： A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the carbon concentration in an area closer to the first electrode is greater than that in an area closer to the second electrode.
摘要翻译：可变电阻元件包括插入在第一和第二电极之间的第一电极，第二电极和离子传导层。离子传导层含有至少含有氧和碳的有机氧化物。离子传导层中的碳浓度分布使得靠近第一电极的区域中的碳浓度大于靠近第二电极的区域中的碳浓度。

3. 发明申请

US20130092895A1 SEMICONDUCTOR DEVICE AND OPERATION METHOD FOR SAME 有权
标题翻译：半导体器件及其操作方法
公开(公告)号：US20130092895A1
公开(公告)日：2013-04-18
申请号：US13704225
申请日：2011-06-09
申请人： Munehiro Tada , Makoto Miyamura , Hiromitsu Hada
发明人： Munehiro Tada , Makoto Miyamura , Hiromitsu Hada
IPC分类号： H01L27/24
CPC分类号： H01L27/2436 , G11C13/0007 , G11C13/0014 , G11C13/003 , G11C13/0069 , G11C2013/0073 , H01L27/101 , H01L27/2463 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/14 , H01L45/146
摘要： A semiconductor device includes a first switching element, a second switching element, and at least one third switching element; wherein the third switching element includes a first terminal and a second terminal, wherein each of the first switching element and the second switching element includes an ion conductor, a first electrode which is disposed so as to have contact with the ion conductor and supplies metal ions to the ion conductor, and a second electrode which is disposed so as to have contact with the ion conductor and is less susceptible to ionization than the first electrode; and wherein (a) the first electrode of the first switching element and the first electrode of the second switching element are electrically connected each other, and the first terminal of the third switching element is electrically connected to only the first electrodes which are electrically connected each other or (b) the second electrode of the first switching element and the second electrode of the second switching element are electrically connected each other, and the first terminal of the third switching element is electrically connected to only the second electrodes which are electrically connected each other.
摘要翻译：半导体器件包括第一开关元件，第二开关元件和至少一个第三开关元件; 其中所述第三开关元件包括第一端子和第二端子，其中所述第一开关元件和所述第二开关元件中的每一个包括离子导体，所述第一电极被设置为与所述离子导体接触并提供金属离子以及第二电极，其设置成与离子导体接触并且比第一电极不易电离; 并且其中（a）第一开关元件的第一电极和第二开关元件的第一电极彼此电连接，并且第三开关元件的第一端子仅电连接到每个电连接的第一电极另一个或（b）第一开关元件的第二电极和第二开关元件的第二电极彼此电连接，并且第三开关元件的第一端子仅电连接到每个电连接的第二电极其他。

4. 发明申请

US20130082231A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：US20130082231A1
公开(公告)日：2013-04-04
申请号：US13704223
申请日：2011-06-14
申请人： Munehiro Tada , Makoto Miyamura , Hiromitsu Hada
发明人： Munehiro Tada , Makoto Miyamura , Hiromitsu Hada
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , G11C13/0007 , G11C13/0014 , G11C13/003 , G11C13/0069 , G11C2013/0073 , H01L23/53238 , H01L27/101 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/16 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes multilayer interconnects and two variable resistance elements (22a, 22b) that are provided among the multilayer interconnects and that include first electrodes (5), second electrodes (10a, 10b), and variable resistance element films (9a, 9b) that are each interposed between first electrodes (5) and respective second electrodes (10a, 10b). Either the first electrodes (5) or the second electrodes (10a, 10b) of the two variable resistance elements (22a, 22b) are unified.
摘要翻译：半导体器件包括多层互连和设置在多层互连之间的两个可变电阻元件（22a，22b），它们包括第一电极（5），第二电极（10a，10b）和可变电阻元件膜（9a，9b）每个插入在第一电极（5）和相应的第二电极（10a，10b）之间。两个可变电阻元件（22a，22b）的第一电极（5）或第二电极（10a，10b）是一体的。

5. 发明授权

US09406877B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09406877B2
公开(公告)日：2016-08-02
申请号：US13139602
申请日：2010-01-08
申请人： Munehiro Tada , Toshitsugu Sakamoto , Hiromitsu Hada , Naoki Banno
发明人： Munehiro Tada , Toshitsugu Sakamoto , Hiromitsu Hada , Naoki Banno
IPC分类号： H01L45/00 , H01L27/22 , H01L27/24 , H01L27/10
CPC分类号： H01L45/08 , H01L27/101 , H01L27/228 , H01L27/2436 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/16 , H01L45/1625 , H01L45/1675
摘要： A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode.
摘要翻译：半导体器件包括半导体衬底; 半导体衬底上的多层布线层结构; 以及所述多层布线层结构中的可变电阻元件，其中所述可变电阻元件包括电阻在顶部电极和底部电极之间变化的可变电阻元件膜，其中所述多层布线层结构至少包括与底部电极和电连接到顶部电极的插头，并且其中布线也用作底部电极。

6. 发明授权

US09059028B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09059028B2
公开(公告)日：2015-06-16
申请号：US13380728
申请日：2010-06-21
申请人： Munehiro Tada , Toshitsugu Sakamoto , Hiromitsu Hada
发明人： Munehiro Tada , Toshitsugu Sakamoto , Hiromitsu Hada
IPC分类号： H01L47/00 , H01L27/10 , H01L27/24 , H01L45/00
CPC分类号： H01L27/101 , H01L27/2436 , H01L27/2454 , H01L27/2481 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： The objective of the present invention is to provide a semiconductor device provided with a resistance-variable element having sufficient switching property and exhibiting high reliability and high densification as well as good insulating property.The present invention provides a semiconductor device comprising a resistance-variable element provided within multiple wiring layers on a semiconductor substrate, wherein the resistance-variable element comprises a laminated structure in which a first electrode, a first ion-conductive layer of valve-metal oxide film, a second ion-conductive layer containing oxygen and a second electrode are laminated in this order, and the wiring of the multiple wiring layers also serves as the first electrode.
摘要翻译：本发明的目的是提供一种半导体器件，其具有具有足够的开关性能并且具有高可靠性和高致密度以及良好的绝缘性能的电阻可变元件。本发明提供一种半导体器件，其包括设置在半导体衬底上的多个布线层内的电阻可变元件，其中所述电阻可变元件包括层压结构，其中第一电极，阀 - 金属氧化物的第一离子传导层膜，含有氧的第二离子传导层和第二电极按顺序层叠，并且多个配线层的布线也用作第一电极。

7. 发明授权

US08536629B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08536629B2
公开(公告)日：2013-09-17
申请号：US13202687
申请日：2010-01-14
申请人： Munehiro Tada , Hiromitsu Hada
发明人： Munehiro Tada , Hiromitsu Hada
IPC分类号： H01L29/772 , H01L21/762
CPC分类号： H01L21/8221 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/31633 , H01L21/76254 , H01L25/0657 , H01L27/0688 , H01L27/108 , H01L27/10802 , H01L27/10897 , H01L27/1203 , H01L27/124 , H01L27/1266 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/0002 , H01L2924/12044 , H01L2924/00 , H01L2224/80001
摘要： A method for manufacturing a semiconductor device, includes: forming an insulating film containing silicon, oxygen and carbon on at least one of a first substrate and a second substrate; and bonding the first substrate and the second substrate together, with the insulating film interposed therebetween. There can be provided a method capable of manufacturing a semiconductor device having high element density, high performance and high reliability, with high yield.
摘要翻译：一种制造半导体器件的方法，包括：在第一衬底和第二衬底中的至少一个上形成含有硅，氧和碳的绝缘膜; 以及将所述第一基板和所述第二基板接合在一起，并且所述绝缘膜插入其间。可以提供能够以高产率制造元件密度高，性能高，可靠性高的半导体器件的方法。

8. 发明申请

US20120091426A1 RESISTANCE-VARIABLE ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：电阻可变元件及其制造方法
公开(公告)号：US20120091426A1
公开(公告)日：2012-04-19
申请号：US13380092
申请日：2010-06-21
申请人： Munehiro Tada , Toshitsugu Sakamoto , Yuko Yabe , Yukishige Saito , Hiromitsu Hada
发明人： Munehiro Tada , Toshitsugu Sakamoto , Yuko Yabe , Yukishige Saito , Hiromitsu Hada
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , G11C13/0011 , G11C2213/15 , G11C2213/32 , G11C2213/56 , H01L45/085 , H01L45/146 , H01L45/1616 , H01L45/1625
摘要： A resistance-variable element as disclosed has high reliability, high densification, and good insulating properties. The device provides a resistance-variable element in which a first electrode including a metal primarily containing copper, an oxide film of valve-metal, an ion-conductive layer containing oxygen and a second electrode are laminated in this order.
摘要翻译：所公开的电阻可变元件具有高可靠性，高密度化和良好的绝缘性能。该装置提供一种电阻可变元件，其中包括主要包含铜的金属，阀金属的氧化物膜，含氧的离子传导层和第二电极的第一电极按此顺序层压。

9. 发明申请

US20110298021A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110298021A1
公开(公告)日：2011-12-08
申请号：US13202687
申请日：2010-01-14
申请人： Munehiro Tada , Hiromitsu Hada
发明人： Munehiro Tada , Hiromitsu Hada
IPC分类号： H01L29/772 , H01L21/762
CPC分类号： H01L21/8221 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/31633 , H01L21/76254 , H01L25/0657 , H01L27/0688 , H01L27/108 , H01L27/10802 , H01L27/10897 , H01L27/1203 , H01L27/124 , H01L27/1266 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/0002 , H01L2924/12044 , H01L2924/00 , H01L2224/80001
摘要： A method for manufacturing a semiconductor device, includes: forming an insulating film containing silicon, oxygen and carbon on at least one of a first substrate and a second substrate; and bonding the first substrate and the second substrate together, with the insulating film interposed therebetween. There can be provided a method capable of manufacturing a semiconductor device having high element density, high performance and high reliability, with high yield.
摘要翻译：一种制造半导体器件的方法，包括：在第一衬底和第二衬底中的至少一个上形成含有硅，氧和碳的绝缘膜; 以及将所述第一基板和所述第二基板接合在一起，并且所述绝缘膜插入其间。可以提供能够以高产率制造元件密度高，性能高，可靠性高的半导体器件的方法。

10. 发明授权

US10256400B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US10256400B2
公开(公告)日：2019-04-09
申请号：US15173875
申请日：2016-06-06
申请人： Munehiro Tada , Toshitsugu Sakamoto , Hiromitsu Hada , Naoki Banno
发明人： Munehiro Tada , Toshitsugu Sakamoto , Hiromitsu Hada , Naoki Banno
IPC分类号： H01L27/22 , H01L45/00 , H01L27/24 , H01L27/10
摘要： A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode.

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