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1. 发明授权

US07437702B2 Method for making mask in process of fabricating semiconductor device 失效
标题翻译：在制造半导体器件的过程中制造掩模的方法
公开(公告)号：US07437702B2
公开(公告)日：2008-10-14
申请号：US11316876
申请日：2005-12-27
申请人： Mun Hoe Do
发明人： Mun Hoe Do
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method for making a mask in a process of fabricating a semiconductor device is disclosed, in which one database is classified into an SRAM block and a random logic block so that OPC is separately performed for the SRAM block and the random logic block, thereby improving performance of the OPC. The method includes dividing an input database into an SRAM block and a random logic block, respectively performing optical proximity correction (OPC) for the SRAM block and the random logic block, and combining the SRAM block to the random logic block.
摘要翻译：公开了一种在制造半导体器件的过程中制造掩模的方法，其中一个数据库分为SRAM块和随机逻辑块，以便为SRAM块和随机逻辑块分别执行OPC，从而改进 OPC的性能。该方法包括将输入数据库划分为SRAM块和随机逻辑块，分别对SRAM块和随机逻辑块执行光学邻近校正（OPC），并将SRAM块组合到随机逻辑块。

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