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    • 5. 发明授权
    • Production of thin, stable, solid electrolyte films of high ionic
conductivity
    • 生产具有高离子电导率的薄,稳定,固体电解质膜
    • US4105807A
    • 1978-08-08
    • US599897
    • 1975-07-28
    • Mulk R. Arora
    • Mulk R. Arora
    • H01L23/58H01M6/18C23C15/00C23C11/08
    • H01M6/18H01L23/58H01L2224/32225H01L2224/45144H01L2224/48227H01L2224/48472H01L2224/73265
    • Production of thin stable films of oxy-anion-substituted silver iodide solid electrolytes, such as Ag.sub.19 I.sub.15 P.sub.2 O.sub.7, on a substrate, such films having good ionic conductivity at room temperature, by vaporizing such oxy-anion-substituted silver iodide elecytrolyte material, or a mixture of the components thereof in stoichiometric proportions, by flash evaporation of such electrolyte material at high temperature, preferably ranging from about 1,400.degree. to about 1,600.degree. C., or by RF sputtering, preferably at electrode potentials ranging from about 700 to about 900 volts, and maintaining the substrate on which the solid electrolyte film is deposited, at certain elevated temperatures, preferably ranging from about 140.degree. to about 150.degree. C., to permit recombination and deposition of the vaporized constituents of the electrolyte material on the substrate, to form a thin film of the solid electrolyte such that the solid electrolyte film thus formed is neither iodine-rich nor iodine-poor, relative to the proper stoichiometry for such solid electrolyte.
    • 在基底上制备氧阴离子取代的碘化银固体电解质如Ag19I15P2O7的薄稳定膜,通过蒸发这种氧阴离子取代的碘化银电解质材料或混合物在室温下具有良好的离子导电性的这种膜 的组分以化学计量比例,通过在高温下,优选约1400℃至1600℃左右的这种电解质材料的闪蒸,或通过RF溅射,优选在约700至约900伏范围内的电极电位, 并且在一定的升高的温度下,优选在约140℃至约150℃范围内保持其上沉积固体电解质膜的基材,以允许电解质材料的汽化组分在基底上重组和沉积,形成 固体电解质的薄膜,使得由此形成的固体电解质膜既不富含碘也不是贫碘 对于这种固体电解质的适当化学计量。