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1. 发明申请

US20130334691A1 SIDEWALLS OF ELECTROPLATED COPPER INTERCONNECTS 有权
标题翻译：电镀铜互连的边界
公开(公告)号：US20130334691A1
公开(公告)日：2013-12-19
申请号：US13525823
申请日：2012-06-18
申请人： Mukta G. Farooq , John A. Fitzsimmons , Troy L. Graves-Abe
发明人： Mukta G. Farooq , John A. Fitzsimmons , Troy L. Graves-Abe
IPC分类号： H01L23/52 , H01L21/283
CPC分类号： H05K3/423 , H01L21/76844 , H01L21/76846 , H01L21/76858 , H01L21/76898 , H01L23/481 , H01L23/53209 , H01L23/53214 , H01L23/53238 , H01L23/53242 , H01L23/53257 , H01L2924/0002 , Y10T428/12764 , H01L2924/00
摘要： A structure formed in an opening having a substantially vertical sidewall defined by a non-metallic material and having a substantially horizontal bottom defined by a conductive pad, the structure including a diffusion barrier covering the sidewall and a fill composed of conductive material. The structure including a first intermetallic compound separating the diffusion barrier from the conductive material, the first intermetallic compound comprises an alloying material and the conductive material, and is mechanically bound to the conductive material, the alloying material is at least one of the materials selected from the group of chromium, tin, nickel, magnesium, cobalt, aluminum, manganese, titanium, zirconium, indium, palladium, and silver; and a first high friction interface located between the diffusion barrier and the first intermetallic compound and parallel to the sidewall of the opening, wherein the first high friction interface results in a mechanical bond between the diffusion barrier and the first intermetallic compound.
摘要翻译：一种形成在开口中的结构，其具有由非金属材料限定的基本上垂直的侧壁，并且具有由导电垫限定的基本上水平的底部，该结构包括覆盖侧壁的扩散阻挡层和由导电材料构成的填充物。所述结构包括将所述扩散阻挡物与所述导电材料分离的第一金属间化合物，所述第一金属间化合物包括合金材料和所述导电材料，并且机械地结合到所述导电材料上，所述合金材料是选自以下的至少一种材料：铬，锡，镍，镁，钴，铝，锰，钛，锆，铟，钯和银的组合; 以及位于所述扩散阻挡层和所述第一金属间化合物之间且平行于所述开口的侧壁的第一高摩擦界面，其中所述第一高摩擦界面导致所述扩散阻挡层和所述第一金属间化合物之间的机械结合。

2. 发明申请

US20100301475A1 Forming Semiconductor Chip Connections 有权
标题翻译：形成半导体芯片连接
公开(公告)号：US20100301475A1
公开(公告)日：2010-12-02
申请号：US12471656
申请日：2009-05-26
申请人： Louis Lu-Chen Hsu , Kangguo Cheng , Timothy J. Dalton , Mukta G. Farooq , John A. Fitzsimmons
发明人： Louis Lu-Chen Hsu , Kangguo Cheng , Timothy J. Dalton , Mukta G. Farooq , John A. Fitzsimmons
IPC分类号： H01L23/498 , H01L21/50
CPC分类号： H01L24/14 , H01L21/6836 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L25/0652 , H01L25/0657 , H01L27/0207 , H01L29/0657 , H01L2224/0401 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/06183 , H01L2224/13009 , H01L2224/13099 , H01L2224/131 , H01L2224/14183 , H01L2224/16 , H01L2224/16105 , H01L2224/16137 , H01L2224/16147 , H01L2224/81205 , H01L2224/81801 , H01L2225/06513 , H01L2225/06524 , H01L2225/06551 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Systems and methods are disclosed that enable forming semiconductor chip connections. In one embodiment, the semiconductor chip includes a body having a polyhedron shape with a pair of opposing sides; and a solder member extending along a side that extends between the pair of opposing sides of the polyhedron shape.
摘要翻译：公开了能够形成半导体芯片连接的系统和方法。在一个实施例中，半导体芯片包括具有一对相对侧面的多面体形状的主体; 以及沿着在多面体形状的一对相对侧之间延伸的一侧延伸的焊料构件。

3. 发明授权

US08970041B2 Co-axial restraint for connectors within flip-chip packages 有权
标题翻译：倒装芯片封装内连接器的同轴约束
公开(公告)号：US08970041B2
公开(公告)日：2015-03-03
申请号：US13470379
申请日：2012-05-14
申请人： Mukta G. Farooq , John A. Fitzsimmons
发明人： Mukta G. Farooq , John A. Fitzsimmons
IPC分类号： H01L23/48 , H01L23/00
CPC分类号： H01L24/73 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/92 , H01L2224/10126 , H01L2224/1182 , H01L2224/13014 , H01L2224/13076 , H01L2224/131 , H01L2224/13111 , H01L2224/13565 , H01L2224/13582 , H01L2224/1369 , H01L2224/16225 , H01L2224/16227 , H01L2224/29014 , H01L2224/2919 , H01L2224/32225 , H01L2224/73104 , H01L2224/81097 , H01L2224/81191 , H01L2224/81801 , H01L2224/83191 , H01L2224/83855 , H01L2224/9211 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/30107 , H01L2924/351 , H01L2924/00014 , H01L2224/81 , H01L2224/83 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： An assembly can include a microelectronic element such as, for example, a semiconductor element having circuits and semiconductor devices fabricated therein, and a plurality of electrical connectors, e.g., solder balls attached to contacts of the microelectronic element. The connectors can be surrounded by first, inner regions 200 of compressible dielectric material and second, outer regions of dielectric material. In one embodiment, an underfill can contact a face of the microelectronic element between respective connectors or second regions. The second regions can provide restraining force, such that during volume expansion of the connectors, the first regions can compress against the restraining force of the second regions.
摘要翻译：组件可以包括微电子元件，例如具有其中制造的电路和半导体器件的半导体元件，以及多个电连接器，例如附接到微电子元件的触点的焊球。连接器可以被可压缩介电材料的第一内部区域200和介电材料的第二外部区域包围。在一个实施例中，底部填充物可以在相应的连接器或第二区域之间接触微电子元件的面。第二区域可以提供约束力，使得在连接器的体积膨胀期间，第一区域可以抵抗第二区域的约束力而被压缩。

4. 发明授权

US08236610B2 Forming semiconductor chip connections 有权
标题翻译：形成半导体芯片连接
公开(公告)号：US08236610B2
公开(公告)日：2012-08-07
申请号：US12471656
申请日：2009-05-26
申请人： Louis Lu-Chen Hsu , Kangguo Cheng , Timothy J. Dalton , Mukta G. Farooq , John A. Fitzsimmons
发明人： Louis Lu-Chen Hsu , Kangguo Cheng , Timothy J. Dalton , Mukta G. Farooq , John A. Fitzsimmons
IPC分类号： H01L21/00 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/14 , H01L21/6836 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L25/0652 , H01L25/0657 , H01L27/0207 , H01L29/0657 , H01L2224/0401 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/06183 , H01L2224/13009 , H01L2224/13099 , H01L2224/131 , H01L2224/14183 , H01L2224/16 , H01L2224/16105 , H01L2224/16137 , H01L2224/16147 , H01L2224/81205 , H01L2224/81801 , H01L2225/06513 , H01L2225/06524 , H01L2225/06551 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Systems and methods are disclosed that enable forming semiconductor chip connections. In one embodiment, the semiconductor chip includes a body having a polyhedron shape with a pair of opposing sides; and a solder member extending along a side that extends between the pair of opposing sides of the polyhedron shape.
摘要翻译：公开了能够形成半导体芯片连接的系统和方法。在一个实施例中，半导体芯片包括具有一对相对侧面的多面体形状的主体; 以及沿着在多面体形状的一对相对侧之间延伸的一侧延伸的焊料构件。

5. 发明授权

US07755206B2 Pad structure to provide improved stress relief 有权
标题翻译：垫结构提供改善的应力消除
公开(公告)号：US07755206B2
公开(公告)日：2010-07-13
申请号：US11947184
申请日：2007-11-29
申请人： Mukta G. Farooq , John A. Fitzsimmons , Thomas J. Fleischman
发明人： Mukta G. Farooq , John A. Fitzsimmons , Thomas J. Fleischman
IPC分类号： H01L23/48
CPC分类号： B81B3/0072 , B81B2207/07 , H01L24/72 , H01L2924/14 , H01L2924/1461 , H01L2924/15787 , H01L2924/00
摘要： A semiconductor interconnection comprises a semiconductor device, a substrate adjacent the semiconductor device, and a plurality of spring contacts on the semiconductor device or the substrate. A plurality of solder connections are on the opposite semiconductor device or substrate. Each spring contact comprises a contact surface and a conductive material on the contact surface. Upon assembly of the semiconductor device and the substrate, the conductive material on the plurality of spring contacts makes contact with each of the plurality of solder connections. The conductive material is in a liquid state at manufacturing or operating temperatures of the semiconductor device. Thus, the conductive material could be a solid at room temperature and transition to a liquid state at the semiconductor's manufacturing or operating temperatures.
摘要翻译：半导体互连包括半导体器件，与半导体器件相邻的衬底，以及半导体器件或衬底上的多个弹簧触点。多个焊接连接在相对的半导体器件或衬底上。每个弹簧触点包括在接触表面上的接触表面和导电材料。在组装半导体器件和衬底时，多个弹簧触头上的导电材料与多个焊料连接中的每一个接触。导电材料在半导体器件的制造或工作温度下处于液态。因此，导电材料在室温下可以是固体，并且在半导体的制造或操作温度下转变为液态。

6. 发明授权

US07566649B2 Compressible films surrounding solder connectors 有权
标题翻译：围绕焊料连接器的可压缩薄膜
公开(公告)号：US07566649B2
公开(公告)日：2009-07-28
申请号：US11858147
申请日：2007-09-20
申请人： William E. Bernier , Tien-Jen Cheng , Marie S. Cole , David E. Eichstadt , Mukta G. Farooq , John A. Fitzsimmons , Lewis S. Goldmann , John U. Knickerbocker , Tasha E. Lopez , David J. Welsh
发明人： William E. Bernier , Tien-Jen Cheng , Marie S. Cole , David E. Eichstadt , Mukta G. Farooq , John A. Fitzsimmons , Lewis S. Goldmann , John U. Knickerbocker , Tasha E. Lopez , David J. Welsh
IPC分类号： H01L21/44 , H01L21/50 , H01L21/48 , H01L23/52 , H01L23/48 , H01L23/485 , H01L23/488
CPC分类号： H01L21/563 , H01L23/3171 , H01L24/12 , H01L24/16 , H01L24/81 , H01L2224/10126 , H01L2224/13099 , H01L2224/131 , H01L2224/13566 , H01L2224/16 , H01L2224/73203 , H01L2224/8121 , H01L2224/81815 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01R43/0256 , H05K3/284 , H05K3/3436 , H05K2201/0133 , H05K2201/10977 , Y02P70/613 , H01L2224/29099 , H01L2224/0401
摘要： Disclosed is a method of forming an integrated circuit structure that forms lead-free connectors on a device, surrounds the lead-free connectors with a compressible film, connects the device to a carrier (the lead-free connectors electrically connect the device to the carrier), and fills the gaps between the carrier and the device with an insulating underfill.
摘要翻译：公开了一种形成集成电路结构的方法，其在器件上形成无铅连接器，用可压缩膜围绕无铅连接器，将器件连接到载体（无铅连接器将器件电连接到载体上），并用绝缘底部填充物填充载体和装置之间的间隙。

7. 发明授权

US08956973B2 Bottom-up plating of through-substrate vias 有权
标题翻译：贯穿基板通孔的自底向上电镀
公开(公告)号：US08956973B2
公开(公告)日：2015-02-17
申请号：US13431343
申请日：2012-03-27
申请人： Mukta G. Farooq , John A. Fitzsimmons , Troy L. Graves-Abe
发明人： Mukta G. Farooq , John A. Fitzsimmons , Troy L. Graves-Abe
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L21/6835 , H01L21/6836 , H01L21/76879 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2221/68359 , H01L2224/03462 , H01L2224/03622 , H01L2224/0401 , H01L2224/05556 , H01L2224/05572 , H01L2224/05611 , H01L2224/05639 , H01L2224/05647 , H01L2224/05655 , H01L2224/05671 , H01L2224/11 , H01L2224/13025 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/94 , Y10T29/41 , H01L2924/00012 , H01L2924/00014 , H01L2224/03 , H01L2924/014
摘要： According to one embodiment of the present invention, a method of plating a TSV hole in a substrate is provided. The TSV hole may include an open end terminating at a conductive pad, a stack of wiring levels, and a plurality of chip interconnects. The method of plating a TSV may include attaching a handler to the plurality of chip interconnects, the handler having a conductive layer in electrical contact with the plurality of chip interconnects; exposing a closed end of the TSV hole, including the conductive pad, to an electrolyte solution; and applying an electrical potential along an electrical path from the conductive layer to the conductive pad causing conductive material from the electrolyte solution to deposit on the conductive pad and within the TSV hole, the electrical path including the conductive layer, the plurality of chip interconnects, the stack of wiring levels and the conductive pad.
摘要翻译：根据本发明的一个实施例，提供了一种在衬底中电镀TSV孔的方法。 TSV孔可以包括终止于导电焊盘的开口端，布线层的堆叠以及多个芯片互连。电镀TSV的方法可以包括将处理器附接到多个芯片互连件，处理器具有与多个芯片互连电接触的导电层; 将包括导电垫的TSV孔的封闭端暴露于电解质溶液中; 以及沿着从所述导电层到所述导电焊盘的电路径施加电势，从而导致来自所述电解质溶液的导电材料沉积在所述导电焊盘和所述TSV孔内，所述电路包括所述导电层，所述多个芯片互连，布线层叠和导电焊盘。

8. 发明申请

US20120223434A1 CO-AXIAL RESTRAINT FOR CONNECTORS WITHIN FLIP-CHIP PACKAGES 有权
标题翻译：用于在芯片包装中的连接器的共轴限制
公开(公告)号：US20120223434A1
公开(公告)日：2012-09-06
申请号：US13470379
申请日：2012-05-14
申请人： Mukta G. Farooq , John A. Fitzsimmons
发明人： Mukta G. Farooq , John A. Fitzsimmons
IPC分类号： H01L23/498
CPC分类号： H01L24/73 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/92 , H01L2224/10126 , H01L2224/1182 , H01L2224/13014 , H01L2224/13076 , H01L2224/131 , H01L2224/13111 , H01L2224/13565 , H01L2224/13582 , H01L2224/1369 , H01L2224/16225 , H01L2224/16227 , H01L2224/29014 , H01L2224/2919 , H01L2224/32225 , H01L2224/73104 , H01L2224/81097 , H01L2224/81191 , H01L2224/81801 , H01L2224/83191 , H01L2224/83855 , H01L2224/9211 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/30107 , H01L2924/351 , H01L2924/00014 , H01L2224/81 , H01L2224/83 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： An assembly can include a microelectronic element such as, for example, a semiconductor element having circuits and semiconductor devices fabricated therein, and a plurality of electrical connectors, e.g., solder balls attached to contacts of the microelectronic element. The connectors can be surrounded by first, inner regions 200 of compressible dielectric material and second, outer regions of dielectric material. In one embodiment, an underfill can contact a face of the microelectronic element between respective connectors or second regions. The second regions can provide restraining force, such that during volume expansion of the connectors, the first regions can compress against the restraining force of the second regions.
摘要翻译：组件可以包括微电子元件，例如具有其中制造的电路和半导体器件的半导体元件，以及多个电连接器，例如附接到微电子元件的触点的焊球。连接器可以被可压缩介电材料的第一内部区域200和介电材料的第二外部区域包围。在一个实施例中，底部填充物可以在相应的连接器或第二区域之间接触微电子元件的面。第二区域可以提供约束力，使得在连接器的体积膨胀期间，第一区域可以抵抗第二区域的约束力而被压缩。

9. 发明授权

US08791005B2 Sidewalls of electroplated copper interconnects 有权
标题翻译：电镀铜互连的侧壁
公开(公告)号：US08791005B2
公开(公告)日：2014-07-29
申请号：US13525823
申请日：2012-06-18
申请人： Mukta G. Farooq , John A. Fitzsimmons , Troy L. Graves-Abe
发明人： Mukta G. Farooq , John A. Fitzsimmons , Troy L. Graves-Abe
IPC分类号： H01L23/532
CPC分类号： H05K3/423 , H01L21/76844 , H01L21/76846 , H01L21/76858 , H01L21/76898 , H01L23/481 , H01L23/53209 , H01L23/53214 , H01L23/53238 , H01L23/53242 , H01L23/53257 , H01L2924/0002 , Y10T428/12764 , H01L2924/00
摘要： A structure formed in an opening having a substantially vertical sidewall defined by a non-metallic material and having a substantially horizontal bottom defined by a conductive pad, the structure including a diffusion barrier covering the sidewall and a fill composed of conductive material. The structure including a first intermetallic compound separating the diffusion barrier from the conductive material, the first intermetallic compound comprises an alloying material and the conductive material, and is mechanically bound to the conductive material, the alloying material is at least one of the materials selected from the group of chromium, tin, nickel, magnesium, cobalt, aluminum, manganese, titanium, zirconium, indium, palladium, and silver; and a first high friction interface located between the diffusion barrier and the first intermetallic compound and parallel to the sidewall of the opening, wherein the first high friction interface results in a mechanical bond between the diffusion barrier and the first intermetallic compound.
摘要翻译：一种形成在开口中的结构，其具有由非金属材料限定的基本上垂直的侧壁，并且具有由导电垫限定的基本上水平的底部，该结构包括覆盖侧壁的扩散阻挡层和由导电材料构成的填充物。所述结构包括将所述扩散阻挡物与所述导电材料分离的第一金属间化合物，所述第一金属间化合物包括合金材料和所述导电材料，并且机械地结合到所述导电材料上，所述合金材料是选自以下的至少一种材料：铬，锡，镍，镁，钴，铝，锰，钛，锆，铟，钯和银的组合; 以及位于所述扩散阻挡层和所述第一金属间化合物之间且平行于所述开口的侧壁的第一高摩擦界面，其中所述第一高摩擦界面导致所述扩散阻挡层和所述第一金属间化合物之间的机械结合。

10. 发明申请

US20110180920A1 CO-AXIAL RESTRAINT FOR CONNECTORS WITHIN FLIP-CHIP PACKAGES 有权
标题翻译：用于在芯片包装中的连接器的共轴限制
公开(公告)号：US20110180920A1
公开(公告)日：2011-07-28
申请号：US12695312
申请日：2010-01-28
申请人： Mukta G. Farooq , John A. Fitzsimmons
发明人： Mukta G. Farooq , John A. Fitzsimmons
IPC分类号： H01L23/48 , H01L21/60
CPC分类号： H01L24/73 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/92 , H01L2224/10126 , H01L2224/1182 , H01L2224/13014 , H01L2224/13076 , H01L2224/131 , H01L2224/13111 , H01L2224/13565 , H01L2224/13582 , H01L2224/1369 , H01L2224/16225 , H01L2224/16227 , H01L2224/29014 , H01L2224/2919 , H01L2224/32225 , H01L2224/73104 , H01L2224/81097 , H01L2224/81191 , H01L2224/81801 , H01L2224/83191 , H01L2224/83855 , H01L2224/9211 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/30107 , H01L2924/351 , H01L2924/00014 , H01L2224/81 , H01L2224/83 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： An assembly can include a microelectronic element such as, for example, a semiconductor element having circuits and semiconductor devices fabricated therein, and a plurality of electrical connectors, e.g., solder balls attached to contacts of the microelectronic element. The connectors can be surrounded by first, inner regions 200 of compressible dielectric material and second, outer regions of dielectric material. In one embodiment, an underfill can contact a face of the microelectronic element between respective connectors or second regions. The second regions can provide restraining force, such that during volume expansion of the connectors, the first regions can compress against the restraining force of the second regions.
摘要翻译：组件可以包括微电子元件，例如具有其中制造的电路和半导体器件的半导体元件，以及多个电连接器，例如附接到微电子元件的触点的焊球。连接器可以被可压缩介电材料的第一内部区域200和介电材料的第二外部区域包围。在一个实施例中，底部填充物可以在相应的连接器或第二区域之间接触微电子元件的面。第二区域可以提供约束力，使得在连接器的体积膨胀期间，第一区域可以抵抗第二区域的约束力而被压缩。

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