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    • 2. 发明授权
    • Decoder circuit, decoding method, output circuit, electro-optical device, and electronic instrument
    • 解码电路,解码方式,输出电路,电光装置和电子仪器
    • US07768316B2
    • 2010-08-03
    • US12389938
    • 2009-02-20
    • Yuichi ToriumiMotoaki NishimuraTakeshi Nomura
    • Yuichi ToriumiMotoaki NishimuraTakeshi Nomura
    • G11C8/00
    • G11C8/10
    • A decoder circuit comprises: first decoder section that decodes an m-bit address signal portion of an (m+n)-bit address signal; and a second decoder section that decodes an n-bit address signal portion of the (m+n)-bit address signal, the first decoder section including a first AND operation circuit section that outputs signals that indicate a decoding result of the m-bit address signal portion, and a second AND operation circuit section that outputs signals that indicate a decoding result of part of the m-bit address signal portion, and the second decoder section including a third AND operation circuit section that outputs signals that indicate a decoding result of the n-bit address signal portion, and a fourth AND operation circuit section that outputs signals that indicate a decoding result of part of the n-bit address signal portion.
    • 解码器电路包括:对(m + n)位地址信号的m位地址信号部分进行解码的第一解码器部分; 以及第二解码器部分,其对(m + n)位地址信号的n位地址信号部分进行解码,第一解码器部分包括第一AND运算电路部分,其输出指示m位解码结果的信号 地址信号部分,以及输出指示m位地址信号部分的一部分的解码结果的信号的第二AND运算电路部分,第二解码器部分包括输出指示解码结果的信号的第三AND运算电路部分 以及输出指示n位地址信号部分的一部分的解码结果的信号的第四AND运算电路部。
    • 7. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07723799B2
    • 2010-05-25
    • US12017570
    • 2008-01-22
    • Motoaki Nishimura
    • Motoaki Nishimura
    • H01L29/76H01L29/94H01L23/62
    • H01L27/0921
    • A semiconductor device includes a P-substrate, an N-well disposed in the P-substrate, an NMOS transistor disposed in the P-substrate and having one of a source and a drain connected to a ground voltage, a P-tap disposed in the P-substrate and connected to a low voltage so as to provide the P-substrate with the low voltage to be lower than the ground voltage, a PMOS transistor disposed in the N-well and having a source connected to a power supply voltage, an N-tap disposed in the N-well and connected to the power supply voltage so as to provide the N-well with the power supply voltage, and a depression-type PMOS transistor having a drain connected to the low voltage and a source connected to the ground voltage so as to prevent a parasitic transistor, which may exist among the PMOS transistor, the N-well, the NMOS transistor, and the P-substrate, from causing a latchup between the power supply voltage and the ground voltage due to the low voltage rising higher than the ground voltage, and for becoming in a conductive state brought by a gate substantially connected to the ground voltage to maintain the low voltage to be substantially at the ground voltage until a possibility that the low voltage rises higher than the ground voltage is eliminated.
    • 半导体器件包括P衬底,设置在P衬底中的N阱,设置在P衬底中并且具有连接到接地电压的源极和漏极之一的NMOS晶体管,设置在P衬底中的P阱 P基板并连接到低电压,以便将低电压的P基板提供为低于接地电压; PMOS晶体管,其设置在N阱中并且具有连接到电源电压的源极, N抽头设置在N阱中并连接到电源电压,以便为N阱提供电源电压;以及凹陷型PMOS晶体管,其漏极连接到低电压并且源极连接 以防止在PMOS晶体管,N阱,NMOS晶体管和P基板之间存在的寄生晶体管因电源电压和地电压之间的闭锁而导致 低电压上升高于接地电压,a d用于由基本连接到接地电压的栅极引起的导通状态,以将低电压基本上保持在接地电压,直到低电压上升高于接地电压的可能性被消除。
    • 10. 发明授权
    • Voltage booster circuit, power supply circuit, and liquid crystal driver
    • 电压升压电路,电源电路和液晶驱动器
    • US07295198B2
    • 2007-11-13
    • US11024713
    • 2004-12-30
    • Motoaki Nishimura
    • Motoaki Nishimura
    • G09G5/00
    • G09G3/3611G09G3/3685G09G3/3696G09G2310/06G09G2330/02
    • A charge-pump circuit includes: MOS transistors connected in series and having one end to which a system ground power supply voltage is supplied; and a discharge transistor. The discharge transistor has one end connected to a node which is connected to the MOS transistors, and the system ground power supply voltage is supplied to the other end of the discharge transistor. The MOS transistors are implemented by a triple-well structure formed in a p-type semiconductor substrate. When a normal operation is performed, the MOS transistors are turned ON and the discharge transistor is turned OFF. When a discharge operation is performed, the MOS transistors are turned OFF and the discharge transistor is turned ON, and a current path is formed by parasitic bipolar transistor elements.
    • 电荷泵电路包括:MOS晶体管串联连接并且具有供给系统接地电源电压的一端; 和放电晶体管。 放电晶体管的一端连接到连接到MOS晶体管的节点,并且系统地电源电压被提供给放电晶体管的另一端。 MOS晶体管通过形成在p型半导体衬底中的三阱结构来实现。 当执行正常操作时,MOS晶体管导通,放电晶体管截止。 当执行放电操作时,MOS晶体管截止并且放电晶体管导通,并且电流路径由寄生双极晶体管元件形成。