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1. 发明申请

US20050233226A1 Apparatus and method for correcting pattern dimension and photo mask and test photo mask 有权
标题翻译：用于校正图案尺寸和光掩模和测试光罩的装置和方法
公开(公告)号：US20050233226A1
公开(公告)日：2005-10-20
申请号：US11156592
申请日：2005-06-21
申请人： Morimi Osawa , Teruyoshi Yao , Hiroshi Arimoto , Satoru Asai
发明人： Morimi Osawa , Teruyoshi Yao , Hiroshi Arimoto , Satoru Asai
IPC分类号： G03F1/36 , G03F1/68 , G03F7/20 , H01L21/027 , G03F9/00 , G03B27/00 , G03C5/00 , G06F17/50 , G06K9/00
CPC分类号： G03F7/70941 , G03F1/44 , G03F1/70 , G03F7/70591 , G03F7/70625
摘要： The width values of transferred patterns of respective evaluation patterns transferred using a test photo mask (11) are calculated by first calculation unit (12) based on the relationship with the opening ratio of flare generation patterns. The distribution of the calculated width values of the respective transferred patterns is linearly approximated by second calculation unit (13) and the inclination thereof is calculated. On the basis of a table defining the inclination of the width values of the respective transferred patterns (the ratio of dimension fluctuation), the amount of correction is changed for each pattern by correction unit (14). Consequently, the amount of dimension fluctuation caused by local flares can be accurately calculated. This enables accurately performing pattern-dimension corrections against local flares.
摘要翻译：使用测试光掩模（11）转印的各个评估图案的转印图案的宽度值基于与闪光发生图案的开口率的关系由第一计算单元（12）计算。所计算的各个转移图案的宽度值的分布由第二计算单元（13）线性近似，并且计算其倾斜度。基于定义各个转印图案的宽度值的倾斜度（尺寸波动的比例）的表格，通过校正单元（14）对每个图案改变校正量。因此，可以精确地计算由局部耀斑引起的尺寸波动量。这使得能够对局部耀斑进行精确的模式维度校正。

2. 发明授权

US07601471B2 Apparatus and method for correcting pattern dimension and photo mask and test photo mask 有权
标题翻译：用于校正图案尺寸和光掩模和测试光罩的装置和方法
公开(公告)号：US07601471B2
公开(公告)日：2009-10-13
申请号：US11156592
申请日：2005-06-21
申请人： Morimi Osawa , Teruyoshi Yao , Hiroshi Arimoto , Satoru Asai
发明人： Morimi Osawa , Teruyoshi Yao , Hiroshi Arimoto , Satoru Asai
IPC分类号： G03C5/00 , H01L21/00 , G03B27/68 , G03F1/00
CPC分类号： G03F7/70941 , G03F1/44 , G03F1/70 , G03F7/70591 , G03F7/70625
摘要： The width values of transferred patterns of respective evaluation patterns transferred using a test photo mask (11) are calculated by first calculation unit (12) based on the relationship with the opening ratio of flare generation patterns. The distribution of the calculated width values of the respective transferred patterns is linearly approximated by second calculation unit (13) and the inclination thereof is calculated. On the basis of a table defining the inclination of the width values of the respective transferred patterns (the ratio of dimension fluctuation), the amount of correction is changed for each pattern by correction unit (14). Consequently, the amount of dimension fluctuation caused by local flares can be accurately calculated. This enables accurately performing pattern-dimension corrections against local flares.
摘要翻译：使用测试光掩模（11）转印的各个评估图案的转印图案的宽度值基于与闪光发生图案的开口率的关系由第一计算单元（12）计算。所计算的各个转移图案的宽度值的分布由第二计算单元（13）线性近似，并且计算其倾斜度。基于定义各个转印图案的宽度值的倾斜度（尺寸波动的比例）的表格，通过校正单元（14）对每个图案改变校正量。因此，可以精确地计算由局部耀斑引起的尺寸波动量。这使得能够对局部耀斑进行精确的模式维度校正。

3. 发明申请

US20060018529A1 Mask pattern correction device, method of correcting mask pattern, light exposure correction device, and method of correcting light exposure 有权
标题翻译：掩模图案校正装置，掩模图案的校正方法，曝光修正装置以及曝光校正方法
公开(公告)号：US20060018529A1
公开(公告)日：2006-01-26
申请号：US10995215
申请日：2004-11-24
申请人： Teruyoshi Yao , Satoru Asai , Morimi Osawa , Hiromi Hoshino , Kouzou Ogino , Kazumasa Morishita
发明人： Teruyoshi Yao , Satoru Asai , Morimi Osawa , Hiromi Hoshino , Kouzou Ogino , Kazumasa Morishita
IPC分类号： G03C5/00 , G06K9/00 , G03F1/00
CPC分类号： G03F7/70941 , G03F7/70433 , G03F7/705
摘要： In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every -single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.
摘要翻译：鉴于实现能够以极高的精度估计和校正火炬的平版印刷工艺，并且在整个部分上不仅在单一拍摄区域上，而且在单个区域的整个部分上仅产生非常小的尺寸变化芯片区域，本发明的掩模图案校正装置具有数值孔径计算单元，对于每个单独拍摄区域，基于多个拍摄区域的曝光布局来计算对应于被转印图案的掩模图案的闪光能量或者更具体地，同时考虑来自位于每个单个拍摄区域周围的多个拍摄区域的闪光。

4. 发明授权

US07732107B2 Mask pattern correction device, method of correcting mask pattern, light exposure correction device, and method of correcting light exposure 有权
标题翻译：掩模图案校正装置，掩模图案的校正方法，曝光修正装置以及曝光校正方法
公开(公告)号：US07732107B2
公开(公告)日：2010-06-08
申请号：US10995215
申请日：2004-11-24
申请人： Teruyoshi Yao , Satoru Asai , Morimi Osawa , Hiromi Hoshino , Kouzou Ogino , Kazumasa Morishita
发明人： Teruyoshi Yao , Satoru Asai , Morimi Osawa , Hiromi Hoshino , Kouzou Ogino , Kazumasa Morishita
IPC分类号： G03C5/00 , G03F1/00 , G06F17/50
CPC分类号： G03F7/70941 , G03F7/70433 , G03F7/705
摘要： In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.
摘要翻译：鉴于实现能够以极高的精度估计和校正火炬的平版印刷工艺，并且在整个部分上不仅在单一拍摄区域上，而且在单个区域的整个部分上仅产生非常小的尺寸变化芯片区域，本发明的掩模图案校正装置具有数值孔径计算单元，对于每个单个拍摄区域，基于多个拍摄区域的曝光布局来计算对应于被转印图案的掩模图案的闪光能量，或者更具体地，同时考虑来自位于每个单个拍摄区域周围的多个拍摄区域的闪光。

5. 发明授权

US08553198B2 Mask pattern correction device, method of correcting mask pattern, light exposure correction device, and method of correcting light exposure 有权
标题翻译：掩模图案校正装置，掩模图案的校正方法，曝光修正装置以及曝光校正方法
公开(公告)号：US08553198B2
公开(公告)日：2013-10-08
申请号：US13487388
申请日：2012-06-04
申请人： Teruyoshi Yao , Satoru Asai , Morimi Osawa , Hiromi Hoshino , Kouzou Ogino , Kazumasa Morishita
发明人： Teruyoshi Yao , Satoru Asai , Morimi Osawa , Hiromi Hoshino , Kouzou Ogino , Kazumasa Morishita
IPC分类号： G03B27/68 , G03F1/00 , G03C5/00
CPC分类号： G03F7/70941 , G03F7/70433 , G03F7/705
摘要： In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.
摘要翻译：鉴于实现能够以极高的精度估计和校正火炬的平版印刷工艺，并且在整个部分上不仅在单一拍摄区域上，而且在单个区域的整个部分上仅产生非常小的尺寸变化芯片区域，本发明的掩模图案校正装置具有数值孔径计算单元，对于每个单个拍摄区域，基于多个拍摄区域的曝光布局来计算对应于被转印图案的掩模图案的闪光能量，或者更具体地，同时考虑来自位于每个单个拍摄区域周围的多个拍摄区域的闪光。

6. 发明申请

US20120236279A1 Mask Pattern Correction Device, Method of Correcting Mask Pattern, Light Exposure Correction Device, and Method of Correcting Light Exposure 有权
标题翻译：掩模图案校正装置，校正掩模图案的方法，曝光修正装置以及校正曝光的方法
公开(公告)号：US20120236279A1
公开(公告)日：2012-09-20
申请号：US13487388
申请日：2012-06-04
申请人： Teruyoshi YAO , Satoru Asai , Morimi Osawa , Hiromi Hoshino , Kouzou Ogino , Kazumasa Morishita
发明人： Teruyoshi YAO , Satoru Asai , Morimi Osawa , Hiromi Hoshino , Kouzou Ogino , Kazumasa Morishita
IPC分类号： G03B27/42
CPC分类号： G03F7/70941 , G03F7/70433 , G03F7/705
摘要： In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.
摘要翻译：鉴于实现能够以极高的精度估计和校正火炬的平版印刷工艺，并且在整个部分上不仅在单一拍摄区域上，而且在单个区域的整个部分上仅产生非常小的尺寸变化芯片区域，本发明的掩模图案校正装置具有数值孔径计算单元，对于每个单个拍摄区域，基于多个拍摄区域的曝光布局来计算对应于被转印图案的掩模图案的闪光能量，或者更具体地，同时考虑来自位于每个单个拍摄区域周围的多个拍摄区域的闪光。

7. 发明授权

US08227153B2 Mask pattern correction device, method of correcting mask pattern, light exposure correction device, and method of correcting light exposure 有权
标题翻译：掩模图案校正装置，掩模图案的校正方法，曝光修正装置以及曝光校正方法
公开(公告)号：US08227153B2
公开(公告)日：2012-07-24
申请号：US12767602
申请日：2010-04-26
申请人： Teruyoshi Yao , Satoru Asai , Morimi Osawa , Hiromi Hoshino , Kouzou Ogino , Kazumasa Morishita
发明人： Teruyoshi Yao , Satoru Asai , Morimi Osawa , Hiromi Hoshino , Kouzou Ogino , Kazumasa Morishita
IPC分类号： G03F1/70 , G03F1/38
CPC分类号： G03F7/70941 , G03F7/70433 , G03F7/705
摘要： In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.
摘要翻译：鉴于实现能够以极高的精度估计和校正火炬的平版印刷工艺，并且在整个部分上不仅在单一拍摄区域上，而且在单个区域的整个部分上仅产生非常小的尺寸变化芯片区域，本发明的掩模图案校正装置具有数值孔径计算单元，对于每个单个拍摄区域，基于多个拍摄区域的曝光布局来计算对应于被转印图案的掩模图案的闪光能量，或者更具体地，同时考虑来自位于每个单个拍摄区域周围的多个拍摄区域的闪光。

8. 发明授权

US07971160B2 Creating method of photomask pattern data, photomask created by using the photomask pattern data, and manufacturing method of semiconductor apparatus using the photomask 有权
标题翻译：创建光掩模图案数据的方法，使用光掩模图案数据创建的光掩模以及使用光掩模的半导体装置的制造方法
公开(公告)号：US07971160B2
公开(公告)日：2011-06-28
申请号：US12017658
申请日：2008-01-22
申请人： Morimi Osawa , Takayoshi Minami , Satoru Asai
发明人： Morimi Osawa , Takayoshi Minami , Satoru Asai
IPC分类号： G06F17/50 , G03C5/00 , G03F1/00
CPC分类号： G03F1/36 , H01L27/0207
摘要： A method for creating a pattern on a photomask includes steps of recognizing a space between main patterns by using pattern data which indicate the main patterns to be adjacently transferred onto a wafer, determining a 1st rule about arrangement of an assist pattern on the photomask, the assist pattern being adjacent to the main patterns and not being transferred onto the wafer, estimating a depth of focus in the presence of the assist pattern among the main patterns, determining a 2nd rule about arrangement of the assist pattern on the photomask to improve the depth of focus in the presence of the 1st assist pattern among the main patterns in a group having one or more number of appearance times of the space between main patterns, and correcting the assist pattern on the photomask using the assist pattern data on the basis of the 2nd rule.
摘要翻译：用于在光掩模上创建图案的方法包括通过使用指示要相邻转印到晶片上的主图案的图案数据来识别主图案之间的空间的步骤，确定关于光掩模上的辅助图案的布置的第一规则，辅助图案与主图案相邻并且不被转印到晶片上，在主图案之中估计辅助图案的存在时估计焦深，确定关于在光掩模上的辅助图案的布置的第二规则以提高深度在具有一个或多个主图案之间的空间的出现次数的组中的主要图案之中存在第一辅助图案的情况下，并且基于所述辅助图案数据来校正光掩模上的辅助图案第二条规则

9. 发明申请

US20050095513A1 Photomask 审中-公开
标题翻译：光掩模
公开(公告)号：US20050095513A1
公开(公告)日：2005-05-05
申请号：US11006688
申请日：2004-12-08
申请人： Teruyoshi Yao , Satoru Asai
发明人： Teruyoshi Yao , Satoru Asai
IPC分类号： G03C5/00 , G03F1/14 , G03F9/00
CPC分类号： G03F1/70
摘要： Dummy patterns serving as sub-patterns are formed in virtual regions (2, 3). The numerical apertures of when only main patterns are formed in the virtual regions (2, 3) are 60% and 90%, respectively. The dummy pattern in the virtual region (2) is a light-shielding pattern of a rectangle having a side of 0.15 μm and the dummy pattern in the virtual region 3 is a light-shielding pattern of a rectangle having a side of 0.2 μm. The numerical apertures of the virtual regions (2, 3) are both set to 30%. When exposure using such a photomask is conducted, the amount of light produced by local flare is almost uniform at any point in the area where exposure light is applied on a photosensitive body. As a result, variation of the line width, even if caused, is uniform over the photomask.
摘要翻译：用作子图案的虚拟图案形成在虚拟区域（2,3）中。在虚拟区域（2,3）中仅形成主图案的数值孔径分别为60％和90％。虚拟区域（2）中的虚拟图案是具有0.15μm的边的矩形的遮光图案，虚拟区域3中的虚拟图案是具有0.2μm的边的矩形的遮光图案。虚拟区域（2,3）的数值孔径都设置为30％。当进行使用这种光掩模的曝光时，在曝光光被施加在感光体上的区域的任何点处，由局部耀斑产生的光量几乎是均匀的。结果，即使导致的线宽的变化在光掩模上是均匀的。

10. 发明申请

US20050225736A1 Local flare correction 有权
标题翻译：局部耀斑校正
公开(公告)号：US20050225736A1
公开(公告)日：2005-10-13
申请号：US11147213
申请日：2005-06-08
申请人： Teruyoshi Yao , Satoru Asai
发明人： Teruyoshi Yao , Satoru Asai
IPC分类号： G03F7/20 , H01L21/027 , G03B27/68
CPC分类号： G03F7/70941 , G03F1/44 , G03F1/70
摘要： A correction of a local flare generated at a time of exposure when manufacturing a semiconductor device, wherein a substantial numerical aperture to a pattern in a region to be exposed is calculated for the each region, after that, the flare correction amount for the pattern in the each region is adjusted in conformity with the substantial numerical aperture and exposure conditions in the each region. Backed by this, the effect of the local flare on the pattern exposed by photolithography can be quantitatively corrected in conformity with the respective exposure conditions, so that a desired pattern can be formed readily and accurately.
摘要翻译：在制造半导体器件时在曝光时产生的局部光斑的校正，其中针对每个区域计算要暴露的区域中的图案的实质数值孔径，之后，对于图案中的图案的光斑校正量根据每个区域中的实际数值孔径和曝光条件调整每个区域。由此，可以根据各自的曝光条件定量地校正局部光斑对通过光刻曝光的图案的影响，从而可以容易且准确地形成期望的图案。

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