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1. 发明申请

US20080113280A1 CREATING METHOD OF PHOTOMASK PATTERN DATA, PHOTOMASK CREATED BY USING THE PHOTOMASK PATTERN DATA, AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS USING THE PHOTOMASK 有权
标题翻译：光子图案数据的创建方法，使用光子图案数据创建的光电子产品，以及使用光电子产品制造半导体器件的方法
公开(公告)号：US20080113280A1
公开(公告)日：2008-05-15
申请号：US12017658
申请日：2008-01-22
申请人： Morimi OSAWA , Takayoshi MINAMI , Satoru ASAI
发明人： Morimi OSAWA , Takayoshi MINAMI , Satoru ASAI
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/36 , H01L27/0207
摘要： It is an object of the present invention to provide a manufacturing method of a photomask and a manufacturing method of a semiconductor apparatus using the photomask that optimize a sub resolution assist feature on the photomask so as to ensure the depth of focusing for a formed image of a pattern for circuit formation on the photomask, preferably to the miniaturization of a pattern of the semiconductor apparatus. In order to solve the problem, it is to provide a manufacturing method of a photomask according to the present invention, including steps of specifying a frequent space between main patterns frequently appearing, creating data indicating a sub resolution assist feature so as to improve the density of the sub resolution assist feature arranged between the main patterns having the frequent space when the depth of focusing for the main pattern having the frequent space is less than a predetermined value, and forming the mask pattern by using data indicating the main pattern and data indicating the sub resolution assist feature.
摘要翻译：本发明的目的是提供一种光掩模的制造方法和使用光掩模的半导体装置的制造方法，该光掩模优化光掩模上的辅分辨率辅助特征，以确保形成的图像的聚焦深度用于在光掩模上形成电路的图案，优选地是半导体装置的图案的小型化。为了解决这个问题，提供一种根据本发明的光掩模的制造方法，包括以下步骤：指定频繁出现的主图案之间的频繁间隔，创建指示副分辨率辅助特征的数据，以提高密度当具有频繁空间的主图案的聚焦深度小于预定值时，分配在具有频繁空间的主图案之间的子分辨率辅助特征，以及通过使用指示主图案的数据和指示辅助解决方案辅助功能。

2. 发明申请

US20100209834A1 MASK PATTERN CORRECTION DEVICE, METHOD OF CORRECTING MASK PATTERN, LIGHT EXPOSURE CORRECTION DEVICE, AND METHOD OF CORRECTING LIGHT EXPOSURE 有权
标题翻译：掩模图案校正装置，校正掩模图案的方法，光曝光校正装置和校正光照射的方法
公开(公告)号：US20100209834A1
公开(公告)日：2010-08-19
申请号：US12767602
申请日：2010-04-26
申请人： Teruyoshi YAO , Satoru ASAI , Morimi OSAWA , Hiromi HOSHINO , Kouzou OGINO , Kazumasa MORISHITA
发明人： Teruyoshi YAO , Satoru ASAI , Morimi OSAWA , Hiromi HOSHINO , Kouzou OGINO , Kazumasa MORISHITA
IPC分类号： G03F7/20 , G06F17/50
CPC分类号： G03F7/70941 , G03F7/70433 , G03F7/705
摘要： In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.
摘要翻译：鉴于实现能够以极高的精度估计和校正火炬的平版印刷工艺，并且在整个部分上不仅在单一拍摄区域上，而且在单个区域的整个部分上仅产生非常小的尺寸变化芯片区域，本发明的掩模图案校正装置具有数值孔径计算单元，对于每个单个拍摄区域，基于多个拍摄区域的曝光布局来计算对应于被转印图案的掩模图案的闪光能量，或者更具体地，同时考虑来自位于每个单个拍摄区域周围的多个拍摄区域的闪光。

3. 发明申请

US20070298353A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造半导体器件的图案形成方法和方法
公开(公告)号：US20070298353A1
公开(公告)日：2007-12-27
申请号：US11848786
申请日：2007-08-31
申请人： Tomohiko YAMAMOTO , Satoru ASAI
发明人： Tomohiko YAMAMOTO , Satoru ASAI
IPC分类号： G03C5/00
CPC分类号： G03F1/32 , G03F1/70
摘要： Double exposure is performed by using a pair of photomasks, an attenuated phase shift mask or the like which is not an alternating phase shift mask, and a pattern is transferred onto a photoresist. Here, on the occasion of performing exposure with the photomask for forming a finer pattern, double pole illumination is used as an illumination system.
摘要翻译：通过使用不是交替相移掩模的一对光掩模，衰减相移掩模等进行双重曝光，并且将图案转印到光致抗蚀剂上。这里，在用用于形成更精细图案的光掩模进行曝光的场合，使用双极照明作为照明系统。

4. 发明申请

US20110250472A1 SHIELDING GAS FOR MAG WELDING, MAG WELDING METHOD, AND WELDED STRUCTURE 审中-公开
标题翻译： MAG焊接用焊接气体，MAG焊接方法和焊接结构
公开(公告)号：US20110250472A1
公开(公告)日：2011-10-13
申请号：US13079307
申请日：2011-04-04
申请人： Yasuhito KAMIJO , Satoru ASAI , Katsunori WADA , Makoto TAKAHASHI
发明人： Yasuhito KAMIJO , Satoru ASAI , Katsunori WADA , Makoto TAKAHASHI
IPC分类号： B23K9/16 , B32B15/01
CPC分类号： B23K9/0213 , B23K9/164 , B23K9/173 , B23K35/383 , B23K2101/001 , B23K2101/10 , B23K2103/04 , B23K2103/05 , Y10T428/12979
摘要： The shielding gas for MAG welding according to an embodiment is a shielding gas for MAG welding to perform narrow gap welding of a high Cr steel containing 8 wt % to 13 wt % of Cr with one layer-one pass by using a solid wire containing 8 wt % to 13 wt % of Cr, and the shielding gas for MAG welding comprises a ternary mixed gas of 5% by volume to 17% by volume of a carbon dioxide gas, 30% by volume to 80% by volume of a helium gas, and a balance of an argon gas.
摘要翻译：根据实施例的用于MAG焊接的保护气体是用于MAG焊接的保护气体，通过使用含有8个碳原子的固体电线，通过一次通过对含有8重量％至13重量％的Cr的高Cr钢进行窄间隙焊接 wt％〜13wt％的Cr，MAG焊接用保护气体包括5体积％〜17体积％的二氧化碳气体，30体积％〜80体积％的氦气的三元混合气体，余量为氩气。

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