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    • 2. 发明授权
    • Draught beer dispensing system
    • 起草啤酒分配系统
    • US4869396A
    • 1989-09-26
    • US234894
    • 1988-08-22
    • Morikatsu HorinoManabu KawabeYoshiaki Yagi
    • Morikatsu HorinoManabu KawabeYoshiaki Yagi
    • B67D1/06B67D1/12B67D1/14
    • B67D1/1411B67D1/06B67D1/1252Y10S261/07Y10S261/17
    • A draught beer dispensing system according to the present invention comprises a pressure regulating valve for regulating pressure of carbon dioxide gases supplied from a source of supplying carbon dioxide gases to a draught beer receiving receptacle, a temperature detector provided adjacent to the receiving receptacle to detect a temperature of draught beer within the receiving receptacle, and an arithmetically control device for controlling the pressure regulating valve on the basis of a detected value of the temperature detector, wherein in dispensing the draught beer from the draught beer receiving receptacle, a temperature of the draught beer within the receiving receptacle is detected by the temperature detector, the detected value is inputted into the arithmetically control device, supplied pressure of carbon dioxide gases supplied into the draught beer receiving receptacle is arithmetically operated on the basis of the relationship between beer temperature and pressure stored in advance in the arithmetically control device, and an output signal corresponding to the thus operated result is outputted to the pressure regulating valve to control the latter whereby carbon dioxide gases having pressure optimum for the temperature of draught beer when dispensed can be supplied to the draught beer receiving receptacle with eliminating flat beer and excessively foamy beer.
    • 根据本发明的生啤酒分配系统包括压力调节阀,用于调节从供应二氧化碳气体的源供应到起酥啤酒接收容器的二氧化碳气体的压力,温度检测器,设置在接收容器附近以检测 接收容器内的生啤酒的温度,以及用于基于温度检测器的检测值控制压力调节阀的算术控制装置,其中在从起草啤酒接收容器中分配生啤酒时,草图的温度 接收容器内的啤酒由温度检测器检测,检测值被输入到算术控制装置中,根据啤酒温度和压力之间的关系,供给到进料啤酒接收容器中的二氧化碳气体的供给压力进行算术运算 存储在 在算术控制装置中前进,并且将与这样操作的结果相对应的输出信号输出到压力调节阀以控制压力调节阀,由此可以将分配时的生啤酒温度最佳的二氧化碳气体供应到生啤时 接收容器,消除扁平啤酒和过度泡沫的啤酒。
    • 4. 发明申请
    • Vapor phase growth apparatus
    • 气相生长装置
    • US20070163504A1
    • 2007-07-19
    • US10589348
    • 2005-02-15
    • Eiichi ShimizuNobuhito MakinoManabu Kawabe
    • Eiichi ShimizuNobuhito MakinoManabu Kawabe
    • C23C16/00
    • C30B25/10C23C16/4583
    • It is to provide a vapor phase growth apparatus which can perform vapor phase growth of a thin film having a good uniformity throughout a surface of a wafer. The vapor phase growth apparatus includes at least a sealable reactor, a wafer containing member (wafer holder) installed within the reactor and having a wafer mounting portion (pocket hole) on a surface thereof for holding a wafer, a gas supply member (gas inlet pipe) for supplying raw material gas towards the wafer, a heating member (heater) for heating the wafer, and a heat uniformizing member (susceptor) for holding the wafer containing member and uniformizing heat from the heating member, wherein raw material gas is supplied into the reactor in a high temperature environment while heating the wafer by using the heating member via the heat uniformizing member and the wafer containing member, to form a film grown on a surface of the wafer, and wherein a recess portion depressed in a dome shape is formed at a back side of the wafer containing member.
    • 本发明提供一种气相生长装置,其能够在整个晶片的表面上实现均匀性均匀的薄膜的气相生长。 气相生长装置至少包括可密封的反应器,安装在反应器内的晶片容纳构件(晶片保持器),并且在其表面上具有用于保持晶片的晶片安装部分(凹穴),气体供给构件 用于向晶片供应原料气体的加热构件(加热器),用于保持晶片容纳构件的热均匀化构件(基座),并且来自加热构件的均匀化热量,其中提供原料气体 在高温环境下进入反应器,同时通过使用加热构件经由热均匀化构件和晶片容纳构件加热晶片,以形成在晶片的表面上生长的膜,并且其中凹陷的圆顶形状的凹部 形成在晶片容纳构件的背面。
    • 10. 发明授权
    • Vapor phase growth apparatus
    • 气相生长装置
    • US07670434B2
    • 2010-03-02
    • US10589348
    • 2005-02-15
    • Eiichi ShimizuNobuhito MakinoManabu Kawabe
    • Eiichi ShimizuNobuhito MakinoManabu Kawabe
    • H01L21/00C23C14/00C23C16/00
    • C30B25/10C23C16/4583
    • It is to provide a vapor phase growth apparatus which can perform vapor phase growth of a thin film having a good uniformity throughout a surface of a wafer. The vapor phase growth apparatus includes at least a sealable reactor, a wafer containing member (wafer holder) installed within the reactor and having a wafer mounting portion (pocket hole) on a surface thereof for holding a wafer, a gas supply member (gas inlet pipe) for supplying raw material gas towards the wafer, a heating member (heater) for heating the wafer, and a heat uniformizing member (susceptor) for holding the wafer containing member and uniformizing heat from the heating member, wherein raw material gas is supplied into the reactor in a high temperature environment while heating the wafer by using the heating member via the heat uniformizing member and the wafer containing member, to form a film grown on a surface of the wafer, and wherein a recess portion depressed in a dome shape is formed at a back side of the wafer containing member.
    • 本发明提供一种气相生长装置,其能够在整个晶片的表面上实现均匀性均匀的薄膜的气相生长。 气相生长装置至少包括可密封的反应器,安装在反应器内的晶片容纳构件(晶片保持器),并且在其表面上具有用于保持晶片的晶片安装部分(凹穴),气体供给构件 用于向晶片供应原料气体的加热构件(加热器),用于保持晶片容纳构件的热均匀化构件(基座),并且来自加热构件的均匀化热量,其中提供原料气体 在高温环境下进入反应器,同时通过使用加热构件经由热均匀化构件和晶片容纳构件加热晶片,以形成在晶片的表面上生长的膜,并且其中凹陷的圆顶形状的凹部 形成在晶片容纳构件的背面。