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1. 发明授权

US09811712B2 Intensified sensor array for static electricity 有权
公开(公告)号：US09811712B2
公开(公告)日：2017-11-07
申请号：US14376896
申请日：2012-06-22
申请人： Moon Hyo Kang , Ji Ho Hur , Hyo Jun Kim , Bong Yeob Hong
发明人： Moon Hyo Kang , Ji Ho Hur , Hyo Jun Kim , Bong Yeob Hong
IPC分类号： G06F3/041 , G06K9/00 , G01B7/00 , H01L23/60 , H01L27/02 , H01L27/12
CPC分类号： G06K9/00053 , G01B7/003 , G06K9/0002 , H01L23/60 , H01L27/0251 , H01L27/124 , H01L2924/0002 , H01L2924/00
摘要： Provided is a intensified sensor array for static electricity having a structure in which a static electricity preventing wiring covers an upper surface of a pixel circuit to cut off static electricity, so when static electricity of a high voltage is momentarily generated, the static electricity induced through the static electricity preventing wiring is discharged, thereby being capable of effectively protecting the pixel circuit of a lower part from the static electricity.

2. 发明申请

US20150084038A1 INTENSIFIED SENSOR ARRAY FOR STATIC ELECTRICITY 有权
标题翻译：强化传感器阵列静态电力
公开(公告)号：US20150084038A1
公开(公告)日：2015-03-26
申请号：US14376896
申请日：2012-06-22
申请人： Moon Hyo Kang , Ji Ho Hur , Hyo Jun Kim , Bong Yeob Hong
发明人： Moon Hyo Kang , Ji Ho Hur , Hyo Jun Kim , Bong Yeob Hong
IPC分类号： G06K9/00 , H01L27/02 , H01L27/12 , G01B7/00 , H01L23/60
CPC分类号： G06K9/00053 , G01B7/003 , G06K9/0002 , H01L23/60 , H01L27/0251 , H01L27/124 , H01L2924/0002 , H01L2924/00
摘要： Provided is a intensified sensor array for static electricity having a structure in which a static electricity preventing wiring covers an upper surface of a pixel circuit to cut off static electricity, so when static electricity of a high voltage is momentarily generated, the static electricity induced through the static electricity preventing wiring is discharged, thereby being capable of effectively protecting the pixel circuit of a lower part from the static electricity.
摘要翻译：提供了一种强化的静电传感器阵列，其具有防静电布线覆盖像素电路的上表面以截断静电的结构，因此当暂时产生高电压静电时，通过防静电布线被放电，从而能够有效地保护下部的像素电路免受静电。

3. 发明申请

US20130314148A1 CAPACITIVE FINGERPRINT SENSOR 有权
标题翻译：电容指纹传感器
公开(公告)号：US20130314148A1
公开(公告)日：2013-11-28
申请号：US13556551
申请日：2012-07-24
申请人： Moon Hyo Kang , Ji Ho Hur
发明人： Moon Hyo Kang , Ji Ho Hur
IPC分类号： H03K17/975
CPC分类号： G06K9/0002 , H03K17/9622
摘要： The capacitive fingerprint sensor according to the exemplary embodiments of the present invention includes: a fingerprint sensing electrode Cfp for sensing a human fingerprint; a first transistor T1 in which the amount of currents flowing therethrough changes depending on an output voltage of the fingerprint sensing electrode Cfp; a second transistor T2 in which the amount of currents flowing therethrough changes due to a difference between the currents flowing through the first transistor T1; and a third transistor T3 which resets a gate electrode of the first transistor T1 and provides capacitive coupling with the gate electrode of the first transistor T1 via a pulse signal.
摘要翻译：根据本发明的示例性实施例的电容式指纹传感器包括：用于感测人类指纹的指纹感测电极Cfp; 其中流过其中的电流量根据指纹感测电极Cfp的输出电压而变化的第一晶体管T1; 其中流过其中的电流量由于流过第一晶体管T1的电流之间的差异而变化的第二晶体管T2; 以及第三晶体管T3，其复位第一晶体管T1的栅电极，并经由脉冲信号提供与第一晶体管T1的栅电极的电容耦合。

4. 发明授权

US08766651B2 Capacitive fingerprint sensor 有权
标题翻译：电容式指纹传感器
公开(公告)号：US08766651B2
公开(公告)日：2014-07-01
申请号：US13556551
申请日：2012-07-24
申请人： Moon Hyo Kang , Ji Ho Hur
发明人： Moon Hyo Kang , Ji Ho Hur
IPC分类号： G01R27/26
CPC分类号： G06K9/0002 , H03K17/9622
摘要： The capacitive fingerprint sensor according to the exemplary embodiments of the present invention includes: a fingerprint sensing electrode Cfp for sensing a human fingerprint; a first transistor T1 in which the amount of currents flowing therethrough changes depending on an output voltage of the fingerprint sensing electrode Cfp; a second transistor T2 in which the amount of currents flowing therethrough changes due to a difference between the currents flowing through the first transistor T1; and a third transistor T3 which resets a gate electrode of the first transistor T1 and provides capacitive coupling with the gate electrode of the first transistor T1 via a pulse signal.
摘要翻译：根据本发明的示例性实施例的电容式指纹传感器包括：用于感测人类指纹的指纹感测电极Cfp; 其中流过其中的电流量根据指纹感测电极Cfp的输出电压而变化的第一晶体管T1; 其中流过其中的电流量由于流过第一晶体管T1的电流之间的差异而变化的第二晶体管T2; 以及第三晶体管T3，其复位第一晶体管T1的栅电极，并经由脉冲信号提供与第一晶体管T1的栅电极的电容耦合。

5. 发明授权

US06952022B2 Image sensor comprising thin film transistor optical sensor having offset region 有权
标题翻译：图像传感器包括具有偏移区域的薄膜晶体管光学传感器
公开(公告)号：US06952022B2
公开(公告)日：2005-10-04
申请号：US10732320
申请日：2003-12-09
申请人： Jin Jang , Ji Ho Hur , Hyun Chul Nam
发明人： Jin Jang , Ji Ho Hur , Hyun Chul Nam
IPC分类号： H01L29/786 , H01L27/146 , H01L31/0376 , H01L31/10 , H01L29/04
CPC分类号： H01L31/0376 , H01L27/14643 , H01L27/14658 , H01L27/14692 , Y02E10/50
摘要： The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufacturing the image sensor. Since the thin-film transistor optical sensor according to the present invention has a high-resistance silicon region by disposing an offset region in a channel region, a dark leakage current of the optical sensor remains in a low level even under a high voltage. Therefore, it is possible to apply a high voltage to the thin-film transistor optical sensor according to the present invention so that the image senor can be sensitive to a weak light. In addition, since the storage capacitance in the image sensor is formed in a double structure, the image sensor has a high value of capacitance. Furthermore, since a lower common electrode is electrically connected to an upper common electrode, the image sensor has a stable structure.
摘要翻译：本发明涉及一种图像传感器，包括用作用于X射线摄影装置的图像传感器，指纹识别装置，扫描仪等的非晶硅薄膜晶体管光学传感器及其制造方法图像传感器。由于根据本发明的薄膜晶体管光学传感器通过在沟道区域中设置偏移区域而具有高电阻硅区域，所以即使在高电压下，光学传感器的暗漏电流也保持在低电平。因此，可以对根据本发明的薄膜晶体管光学传感器施加高电压，使得图像传感器可以对弱光敏感。此外，由于图像传感器中的存储电容形成为双重结构，所以图像传感器具有高的电容值。此外，由于下部公共电极与上部公共电极电连接，所以图像传感器具有稳定的结构。

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