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1. 发明授权

US06773997B2 Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllability 有权
标题翻译：用于制造具有增强的电荷可控性的高压MOSFET半导体器件的方法
公开(公告)号：US06773997B2
公开(公告)日：2004-08-10
申请号：US09917731
申请日：2001-07-31
申请人： Mohamed Imam , Joe Fulton , Zia Hossain , Masami Tanaka , Taku Yamamoto , Yoshio Enosawa , Katsuya Yamazaki , Evgueniy Stefanov
发明人： Mohamed Imam , Joe Fulton , Zia Hossain , Masami Tanaka , Taku Yamamoto , Yoshio Enosawa , Katsuya Yamazaki , Evgueniy Stefanov
IPC分类号： H01L21336
CPC分类号： H01L29/0847 , H01L29/0634 , H01L29/0878 , H01L29/402 , H01L29/42368 , H01L29/7835
摘要： A high voltage MOSFET device (100) has an nwell region (113) with a p-top layer (108) of opposite conductivity formed to enhance device characteristics. The p-top layer is implanted through a thin gate oxide, and is being diffused into the silicon later in the process using the source/drain anneal process. There is no field oxide grown on the top of the extended drain region, except two islands of field oxide close to the source and drain diffusion regions. This eliminates any possibility of p-top to be consumed by the field oxide, and allows to have a shallow p-top with very controlled and predictable p-top for achieving low on-resistance with maintaining desired breakdown voltage.
摘要翻译：高电压MOSFET器件（100）具有形成有相反导电性的p顶层（108）的n阱区域（113），以增强器件特性。 p顶层通过薄栅极氧化物注入，并且在使用源极/漏极退火工艺的工艺中稍后扩散到硅中。在扩展漏极区域的顶部没有生长场氧化物，除了靠近源极和漏极扩散区域的场氧化物的两个岛外。这消除了由场氧化物消耗p-top的任何可能性，并且允许具有非常受控和可预测的p-top的浅p顶，用于实现低导通电阻，同时保持所需的击穿电压。

2. 发明申请

US20050006706A1 Symmetrical high frequency SCR structure and method 有权
标题翻译：对称高频SCR结构及方法
公开(公告)号：US20050006706A1
公开(公告)日：2005-01-13
申请号：US10615171
申请日：2003-07-09
申请人： Evgueniy Stefanov , Rene Escoffier
发明人： Evgueniy Stefanov , Rene Escoffier
IPC分类号： H01L21/762 , H01L27/02 , H01L29/74 , H01L29/76 , H01L21/332
CPC分类号： H01L27/0262 , H01L21/76224 , H01L29/7436
摘要： In one embodiment, an SCR device (41) includes a p+ wafer (417), a p− layer (416), an n+ buried layer (413) and an n− layer (414). P− wells (411,421) are formed in the n− layer (414). N+ regions (412,422) and p+ regions (415,425) are formed in the p− wells (411,421). A first ohmic contact (431) couples one n+ regions (422) to one p+ region (425). A second ohmic contact (433) couples another n+ region (412) to another p+ region (415) to provide physically and electrically symmetrical low-voltage p-n-p-n silicon controlled rectifiers. A deep isolation trench (419) surrounding the SCR device (41) and dopant concentration profiles provide a low capacitance SCR design for protecting high frequency integrated circuits from electrostatic discharges.
摘要翻译：在一个实施例中，SCR器件（41）包括p +晶片（417），p-层（416），n +掩埋层（413）和n-层（414）。 P-阱（411,421）形成在n-层（414）中。在p-阱（411,421）中形成N +区（412,422）和p +区（415,425）。第一欧姆接触（431）将一个n +区（422）耦合到一个p +区（425）。第二欧姆接触件（433）将另一个n +区域（412）耦合到另一个p +区域（415），以提供物理和电对称的低压p-n-p-n可控硅整流器。围绕SCR器件（41）的深隔离沟槽（419）和掺杂剂浓度分布提供了用于保护高频集成电路免受静电放电的低电容SCR设计。

3. 发明申请

US20100001344A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及形成半导体器件的方法
公开(公告)号：US20100001344A1
公开(公告)日：2010-01-07
申请号：US12522036
申请日：2007-01-10
申请人： Evgueniy Stefanov , Ivana Deram , Jean-Michel Reynes
发明人： Evgueniy Stefanov , Ivana Deram , Jean-Michel Reynes
IPC分类号： H01L29/78 , H01L21/22
CPC分类号： H01L29/66719 , H01L29/0623 , H01L29/0634 , H01L29/42372 , H01L29/66712 , H01L29/7395 , H01L29/7811 , H01L29/8083
摘要： A method of forming a semiconductor device having an active area and a termination area surrounding the active area comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate and forming a mask layer over the semiconductor layer. The mask layer outlines at least two portions of a surface of the semiconductor layer: a first outlined portion outlining a floating region in the active area and a second outlined portion outlining a termination region in the termination area. Semiconductor material of a second conductivity type is provided to the first and second outlined portions so as to provide a floating region of the second conductivity type buried in the semiconductor layer in the active area and a first termination region of the second conductivity type buried in the semiconductor layer in the termination area of the semiconductor device.
摘要翻译：形成具有有源区域和围绕有源区域的端接区域的半导体器件的方法包括提供半导体衬底，在半导体衬底上提供第一导电类型的半导体层，并在半导体层上形成掩模层。掩模层概述半导体层的表面的至少两部分：概述有源区域中的浮动区域的第一轮廓部分和概述终止区域中的终止区域的第二轮廓部分。将第二导电类型的半导体材料提供给第一和第二轮廓部分，以便提供掩埋在有源区域中的半导体层中的第二导电类型的浮动区域和埋在第二导电类型中的第二导电类型的第一端接区域半导体器件的端接区域中的半导体层。

4. 发明申请

US20100155828A1 FIELD-EFFECT SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 有权
标题翻译：场效应半导体器件及其形成方法
公开(公告)号：US20100155828A1
公开(公告)日：2010-06-24
申请号：US12063424
申请日：2005-08-10
申请人： Jean-Michel Reynes , Isabelle Majoral , Jean-Pierre Pujo , Evgueniy Stefanov
发明人： Jean-Michel Reynes , Isabelle Majoral , Jean-Pierre Pujo , Evgueniy Stefanov
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/1045 , H01L29/1095 , H01L29/66712
摘要： A semiconductor device comprises a semiconductor layer, a body region of a first conductivity type formed in the semiconductor layer and extending from a first surface of the semiconductor layer, a first region of a second conductivity type formed in the body region, and a second region of the first conductivity type formed in the body region. The first region extends from the first surface of the semiconductor layer and provides a current electrode region of the semiconductor device. The second region surrounds the first region. The doping concentration of the first conductivity type in the second region is greater than a doping concentration of the first conductivity type in the body region.
摘要翻译：半导体器件包括半导体层，形成在半导体层中并从半导体层的第一表面延伸的第一导电类型的主体区域，形成在体区中的第二导电类型的第一区域和第二区域的第一导电类型形成在身体区域中。第一区域从半导体层的第一表面延伸并提供半导体器件的电流电极区域。第二区域围绕第一区域。第二区域中的第一导电类型的掺杂浓度大于体区中第一导电类型的掺杂浓度。

5. 发明授权

US08188539B2 Field-effect semiconductor device and method of forming the same 有权
标题翻译：场效应半导体器件及其形成方法
公开(公告)号：US08188539B2
公开(公告)日：2012-05-29
申请号：US12063424
申请日：2005-08-10
申请人： Jean-Michel Reynes , Isabelle Majoral , Jean-Pierre Pujo , Evgueniy Stefanov
发明人： Jean-Michel Reynes , Isabelle Majoral , Jean-Pierre Pujo , Evgueniy Stefanov
IPC分类号： H01L29/78
CPC分类号： H01L29/7802 , H01L29/1045 , H01L29/1095 , H01L29/66712
摘要： A semiconductor device comprises a semiconductor layer, a body region of a first conductivity type formed in the semiconductor layer and extending from a first surface of the semiconductor layer, a first region of a second conductivity type formed in the body region, and a second region of the first conductivity type formed in the body region. The first region extends from the first surface of the semiconductor layer and provides a current electrode region of the semiconductor device. The second region surrounds the first region. The doping concentration of the first conductivity type in the second region is greater than a doping concentration of the first conductivity type in the body region.
摘要翻译：半导体器件包括半导体层，形成在半导体层中并从半导体层的第一表面延伸的第一导电类型的主体区域，形成在体区中的第二导电类型的第一区域和第二区域的第一导电类型形成在身体区域中。第一区域从半导体层的第一表面延伸并提供半导体器件的电流电极区域。第二区域围绕第一区域。第二区域中的第一导电类型的掺杂浓度大于体区中第一导电类型的掺杂浓度。

6. 发明授权

US06953980B2 Semiconductor filter circuit and method 有权
标题翻译：半导体滤波电路及方法
公开(公告)号：US06953980B2
公开(公告)日：2005-10-11
申请号：US10166288
申请日：2002-06-11
申请人： Rene Escoffier , Evgueniy Stefanov , Jeffrey Pearse , Francine Y. Robb , Peter J. Zdebel
发明人： Rene Escoffier , Evgueniy Stefanov , Jeffrey Pearse , Francine Y. Robb , Peter J. Zdebel
IPC分类号： H01L27/02 , H01L29/00
CPC分类号： H01L27/0251
摘要： A filter circuit (10) is formed on a semiconductor substrate (11) formed with a trench (40) that is lined with a dielectric layer (38). A conductive material (37) is disposed in the trench and coupled to a node (62) to provide a capacitance that modifies a frequency response of an input signal (VIN) to produce a filtered signal (VOUT). An electrostatic discharge device includes an inductor (74) coupled to back to back diodes (17, 18) formed in the substrate to avalanche when a voltage on the node reaches a predetermined magnitude.
摘要翻译：滤波器电路（10）形成在形成有衬有介电层（38）的沟槽（40）的半导体衬底（11）上。导电材料（37）设置在沟槽中并且耦合到节点（62）以提供修改输入信号（V IN IN）的频率响应以产生滤波信号（V _{OUT ）。静电放电装置包括耦合到形成在衬底中的背对背二极管（17,18）的电感器（74），以在节点上的电压达到预定的大小时雪崩。}

7. 发明授权

US06773977B1 Method of forming a diode for integration with a semiconductor device and method of forming a transistor device having an integrated diode 失效
标题翻译：形成用于与半导体器件集成的二极管的方法和形成具有集成二极管的晶体管器件的方法
公开(公告)号：US06773977B1
公开(公告)日：2004-08-10
申请号：US09715748
申请日：2000-11-17
申请人： Jean-Michel Reynes , Ivana Deram , Evgueniy Stefanov
发明人： Jean-Michel Reynes , Ivana Deram , Evgueniy Stefanov
IPC分类号： H01L218234
CPC分类号： H01L29/66719 , H01L27/0629 , H01L29/66136 , H01L29/66712 , H01L29/7804
摘要： The present invention relates to a method of forming a diode (2) for integration with a semiconductor device comprising the steps of providing a layer (4) of semiconductor material, forming a dielectric layer (6) over the layer of semiconductor material, introducing a first conductivity type dopant into the dielectric layer (6), forming a semi-conductive layer (8) over the dielectric layer (6), introducing a second conductivity type dopant into a first region (12) of the semi-conductive layer and re-distributing the first conductivity type dopant from the dielectric layer (6) into the semi-conductive layer (8) so as to form a second region (18) of the first conductivity type dopant in the semi-conductive layer (8), the second region (18) being adjacent the first region (12) so as to provide a P/N junction of the diode (2).
摘要翻译：本发明涉及一种形成与半导体器件集成的二极管（2）的方法，包括以下步骤：提供半导体材料层（4），在半导体材料层上形成介电层（6），引入在所述电介质层（6）中形成第一导电型掺杂剂，在所述电介质层（6）上形成半导电层（8），将第二导电类型掺杂剂引入所述半导体层的第一区域（12）将所述第一导电型掺杂剂从所述介电层（6）分布到所述半导体层（8）中，以在所述半导电层（8）中形成所述第一导电类型掺杂剂的第二区域（18），第二区域（18）与第一区域（12）相邻，以便提供二极管（2）的P / N结。

8. 发明授权

US08779465B2 Semiconductor device and method of forming a semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08779465B2
公开(公告)日：2014-07-15
申请号：US12441311
申请日：2006-09-22
申请人： Jean-Michel Reynes , Philippe Lance , Evgueniy Stefanov , Yann Weber
发明人： Jean-Michel Reynes , Philippe Lance , Evgueniy Stefanov , Yann Weber
IPC分类号： H01L27/06 , H01L21/331
CPC分类号： H01L29/66719 , H01L29/0634 , H01L29/66712 , H01L29/7393 , H01L29/7803 , H01L29/7804
摘要： A semiconductor device arrangement comprises a semiconductor device and an injector device. The semiconductor device comprises a first current electrode region of a first conductivity type, a second current electrode region of the first conductivity type, a drift region between the first and the second current electrode regions, and at least one floating region of a second conductivity type formed in the drift region. The injector device is arranged to receive an activation signal when the semiconductor device is turned on and to inject charge carriers of the second conductivity type into the drift region and the at least one floating region in response to receiving the activation signal.
摘要翻译：半导体器件布置包括半导体器件和注射器器件。半导体器件包括第一导电类型的第一电流电极区域，第一导电类型的第二电流电极区域，第一和第二电流电极区域之间的漂移区域，以及至少一个第二导电类型的浮动区域形成于漂移区。注射器装置被布置成当半导体器件接通时接收激活信号，并且响应于接收到激活信号而将第二导电类型的电荷载流子注入漂移区域和至少一个浮动区域。

9. 发明授权

US08217448B2 Semiconductor device and method of forming a semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08217448B2
公开(公告)日：2012-07-10
申请号：US12522033
申请日：2007-01-04
申请人： Evgueniy Stefanov , Alain Deram , Jean-Michel Reynes
发明人： Evgueniy Stefanov , Alain Deram , Jean-Michel Reynes
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/42368 , H01L29/66712
摘要： A method of forming a semiconductor device comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate, forming a first region of the first conductivity type in the semiconductor layer, and forming a control region over the semiconductor layer and over part of the first region. A mask layer is formed over the semiconductor layer and outlines a first portion of a surface of the semiconductor layer over part of the first region. Semiconductor material of a second conductivity type is provided to the outlined first portion to provide a second region in the semiconductor layer. The first region and second region are driven into the semiconductor layer so as to form a pre-control region of the first conductivity type extending into the semiconductor layer from the surface and under a portion of the control region and a graded body region of the second conductivity type extending into the semiconductor layer under the pre-control region. A body region is formed by providing semiconductor material of the second conductivity type to the outlined first portion. The body region extends into the pre-control region. A current electrode region is formed in the body region.
摘要翻译：一种形成半导体器件的方法包括提供半导体衬底，在半导体衬底上提供第一导电类型的半导体层，在半导体层中形成第一导电类型的第一区域，并在半导体层上形成控制区域和第一个地区的一部分。在半导体层上形成掩模层，并且在第一区域的一部分上划出半导体层的表面的第一部分。第二导电类型的半导体材料被提供到轮廓的第一部分以在半导体层中提供第二区域。第一区域和第二区域被驱动到半导体层中，以便形成从控制区域的表面和部分控制区域延伸到半导体层的第一导电类型的预置区域和第二区域的分级体区域导电类型延伸到预控制区域下方的半导体层。通过将第二导电类型的半导体材料提供给轮廓的第一部分来形成体区。身体区域延伸到预控区域内。在身体区域中形成电流电极区域。

10. 发明授权

US07955929B2 Method of forming a semiconductor device having an active area and a termination area 有权
标题翻译：形成具有有源区和终端区的半导体器件的方法
公开(公告)号：US07955929B2
公开(公告)日：2011-06-07
申请号：US12522036
申请日：2007-01-10
申请人： Evgueniy Stefanov , Ivana Deram , Jean-Michel Reynes
发明人： Evgueniy Stefanov , Ivana Deram , Jean-Michel Reynes
IPC分类号： H01L21/336 , H01L21/425
CPC分类号： H01L29/66719 , H01L29/0623 , H01L29/0634 , H01L29/42372 , H01L29/66712 , H01L29/7395 , H01L29/7811 , H01L29/8083
摘要： A method of forming a semiconductor device having an active area and a termination area surrounding the active area comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate and forming a mask layer over the semiconductor layer. The mask layer outlines at least two portions of a surface of the semiconductor layer: a first outlined portion outlining a floating region in the active area and a second outlined portion outlining a termination region in the termination area. Semiconductor material of a second conductivity type is provided to the first and second outlined portions so as to provide a floating region of the second conductivity type buried in the semiconductor layer in the active area and a first termination region of the second conductivity type buried in the semiconductor layer in the termination area of the semiconductor device.
摘要翻译：形成具有有源区域和围绕有源区域的端接区域的半导体器件的方法包括提供半导体衬底，在半导体衬底上提供第一导电类型的半导体层，并在半导体层上形成掩模层。掩模层概述半导体层的表面的至少两部分：概述有源区域中的浮动区域的第一轮廓部分和概述终止区域中的终止区域的第二轮廓部分。将第二导电类型的半导体材料提供给第一和第二轮廓部分，以便提供掩埋在有源区域中的半导体层中的第二导电类型的浮动区域和埋在第二导电类型中的第二导电类型的第一端接区域半导体器件的端接区域中的半导体层。

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