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1. 发明授权

US5235234A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5235234A
公开(公告)日：1993-08-10
申请号：US785524
申请日：1991-10-31
申请人： Mitsutaka Hikita , Toyoji Tabuchi , Nobuhiko Shibagaki , Atsushi Isobe , Kazuhito Kurosawa
发明人： Mitsutaka Hikita , Toyoji Tabuchi , Nobuhiko Shibagaki , Atsushi Isobe , Kazuhito Kurosawa
IPC分类号： H03H9/145
CPC分类号： H03H9/14502
摘要： A surface acoustic wave device comprises a piezoelectric substrate and a plurality of electrode fingers which are located on the piezoelectric substrate along the propagation direction of a surface acoustic wave. The electrode fingers are located on the piezoelectric substrate at a pitch of about 1.5.lambda.o/2 (where a symbol .lambda.o indicates a wavelength of a surface acoustic wave with a frequency equivalent to the center frequency of the surface acoustic wave device). The width of each of the electrode fingers is about 1.5.lambda.o/4. The electrode fingers are located on the substrate so as to be electrically independent of an external circuit and each other.Since the width of electrode fingers is about 1.5.lambda.o/4, the surface acoustic wave device can be produced without fine processing techniques.
摘要翻译：表面声波装置包括压电基板和沿着声表面波的传播方向位于压电基板上的多个电极指。电极指以约1.5λo/ 2的间距位于压电基板上（其中符号λo表示具有与声表面波装置的中心频率相当的频率的表面声波的波长）。每个电极指的宽度为约1.5λo / 4。电极指位于基板上，以便与外部电路彼此电独立。由于电极指的宽度为约1.5λo / 4，所以可以在没有精细加工技术的情况下制造表面声波装置。

2. 发明授权

US5065065A Surface acoustic wave device 失效
公开(公告)号：US5065065A
公开(公告)日：1991-11-12
申请号：US526508
申请日：1990-05-21
申请人： Mitsutaka Hikita , Toyoji Tabuchi , Nobuhiko Shibagaki , Atsushi Isobe , Kazuhito Kurosawa
发明人： Mitsutaka Hikita , Toyoji Tabuchi , Nobuhiko Shibagaki , Atsushi Isobe , Kazuhito Kurosawa
IPC分类号： H03H9/145
CPC分类号： H03H9/14502
摘要： A surface acoustic wave device comprises a piezoelectric substrate and a plurality of electrode fingers which are located on the piezoelectric substrate along the progagation direction of a surface acoustic wave. The electrode fingers are located on the piezoelectric substrate at a pitch of about 1.5.lambda.o/2 (where a symbol .lambda.o indicates a wavelength of a surface acoustic wave with a frequency equivalent to the center frequency of the surface acoustic wave device). The width of each of the electrode fingers is about 1.5.lambda.o/4. The electrode fingers are located on the substrate so as to be electrically independent of an external circuit and each other.Since the width of electrode fingers is about 1.5.lambda.o/4, the surface acoustic wave device can be produced without fine processing techniques.

3. 发明申请

US20060158283A1 Piezoelectric thin film resonators 失效
公开(公告)号：US20060158283A1
公开(公告)日：2006-07-20
申请号：US11333282
申请日：2006-01-18
申请人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
发明人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/54
CPC分类号： H03H9/174 , H03H9/02102 , H03H9/173 , H03H9/178
摘要： A piezoelectric thin film resonator is formed on a base substrate such as made of Si in which the resonance frequency is substantially determined by the lateral size not by the thickness of the resonator, whereby a resonator for use in TCXO, etc. is provided by the thin film technique, which enables to reduce the thickness of the film and the size of the resonator and integration with Si-based IC incorporating the resonator in one identical substrate.

4. 发明授权

US07561010B2 Piezoelectric thin film resonators 失效
标题翻译：压电薄膜谐振器
公开(公告)号：US07561010B2
公开(公告)日：2009-07-14
申请号：US11333282
申请日：2006-01-18
申请人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
发明人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/13 , H03H9/15 , H03H3/04
CPC分类号： H03H9/174 , H03H9/02102 , H03H9/173 , H03H9/178
摘要： A piezoelectric thin film resonator is formed on a base substrate such as made of Si in which the resonance frequency is substantially determined by the lateral size not by the thickness of the resonator, whereby a resonator for use in TCXO, etc. is provided by the thin film technique, which enables to reduce the thickness of the film and the size of the resonator and integration with Si-based IC incorporating the resonator in one identical substrate.
摘要翻译：压电薄膜谐振器形成在诸如由Si构成的基底衬底上，其中谐振频率基本上由横向尺寸决定，而不是谐振器的厚度，由此由TCXO等使用的谐振器由薄膜技术，其能够减小膜的厚度和谐振器的尺寸以及将谐振器的Si基IC集成在一个相同的衬底中。

5. 发明申请

US20070069606A1 Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator 失效
标题翻译：薄膜体声波谐振器，薄膜体声波谐振滤波器及薄膜体声波谐振器的制造方法
公开(公告)号：US20070069606A1
公开(公告)日：2007-03-29
申请号：US11602330
申请日：2006-11-21
申请人： Hisanori Matsumoto , Kengo Asai , Atsushi Isobe , Mitsutaka Hikita
发明人： Hisanori Matsumoto , Kengo Asai , Atsushi Isobe , Mitsutaka Hikita
IPC分类号： H01L41/00
CPC分类号： H03H9/564 , H03H3/04 , H03H9/02157 , H03H9/174 , H03H9/568 , H03H2003/023 , H03H2003/0442 , H03H2003/0471
摘要： The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.
摘要翻译：本发明提供一种可以使Q因子保持高的薄膜体声波谐振器（FBAR）滤波器。 FBAR滤波器包括形成在同一衬底上的具有第一谐振频率的第一FBAR和具有第二谐振频率的第二FBAR。 FBAR滤光器具有在基板和第一底部电极层之间形成第一底层的结构，在基板和第二底部电极层之间形成第二下层，第一下层厚度与第二下层厚度不同。

6. 发明授权

US5604059A Mask structure having phase shifting pattern suitable for forming fine pattern on photosensitive film and method of manufacturing solid-state devices using such mask structure 失效
标题翻译：具有适于在感光膜上形成精细图案的相移图案的掩模结构以及使用这种掩模结构制造固态器件的方法
公开(公告)号：US5604059A
公开(公告)日：1997-02-18
申请号：US290603
申请日：1994-08-15
申请人： Ryo Imura , Yoshinori Hoshina , Kengo Asai , Mitsutaka Hikita , Atsushi Isobe , Ryo Suzuki , Kohji Oda , Kazuyuki Sakiyama
发明人： Ryo Imura , Yoshinori Hoshina , Kengo Asai , Mitsutaka Hikita , Atsushi Isobe , Ryo Suzuki , Kohji Oda , Kazuyuki Sakiyama
IPC分类号： G03F1/00 , G03F1/30 , G03F1/68 , G03F7/20 , H01L21/027 , H01L21/30 , H03H3/08 , G03F7/12
CPC分类号： G03F7/70466 , G03F1/30 , G03F1/50 , G03F7/2002
摘要： A mask structure has two (or more) groups of device patterns formed on one transparent support plate. Each of the device patterns has a transparent partial pattern. One or both of the groups of device patterns are provided with phase shifting patterns for improvement of the resolution in the lithography. The transparent partial pattern in each of the device patterns in each of the device pattern groups is determined such that each of the transparent partial patterns held by one of the device pattern groups is adapted for combination with one transparent partial pattern held by the other device pattern group by two or more times of transmission of an exposure beam through the mask structure. Manufacturing of solid-state devices is possible by use of the mask structure, in which exposure of a photo-sensitive film on a substrate to an exposure beam through the mask structure is repeated two or more times with a relative position between the mask structure and the substrate being changed.
摘要翻译：掩模结构具有形成在一个透明支撑板上的两个（或多个）装置图案组。每个设备图案具有透明部分图案。装置图案组中的一个或两个设置有用于改进光刻中的分辨率的相移图案。确定每个设备图案组中的每个设备图案中的每个设备图案中的透明部分图案，使得由设备图案组之一保持的每个透明部分图案适于与由另一设备图案保持的一个透明部分图案组合通过掩模结构将曝光光束透射两次或更多次。可以通过使用掩模结构来制造固体器件，其中通过掩模结构将基片上的感光膜暴露于曝光光束，通过掩模结构与掩模结构之间的相对位置重复两次或更多次衬底被改变。

7. 发明申请

US20050168102A1 Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator 审中-公开
标题翻译：薄膜体声波谐振器，薄膜体声波谐振滤波器及薄膜体声波谐振器的制造方法
公开(公告)号：US20050168102A1
公开(公告)日：2005-08-04
申请号：US10909335
申请日：2004-08-03
申请人： Hisanori Matsumoto , Kengo Asai , Atsushi Isobe , Mitsutaka Hikita
发明人： Hisanori Matsumoto , Kengo Asai , Atsushi Isobe , Mitsutaka Hikita
IPC分类号： H03H9/54 , H01L41/08 , H03H3/02 , H03H3/04 , H03H9/02 , H03H9/17 , H03H9/56 , H03H9/70
CPC分类号： H03H9/564 , H03H3/04 , H03H9/02157 , H03H9/174 , H03H9/568 , H03H2003/023 , H03H2003/0442 , H03H2003/0471
摘要： The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.
摘要翻译：本发明提供一种可以使Q因子保持高的薄膜体声波谐振器（FBAR）滤波器。 FBAR滤波器包括形成在同一衬底上的具有第一谐振频率的第一FBAR和具有第二谐振频率的第二FBAR。 FBAR滤光器具有在基板和第一底部电极层之间形成第一底层的结构，在基板和第二底部电极层之间形成第二下层，第一下层厚度与第二下层厚度不同。

8. 发明授权

US06346761B1 Surface acoustic wave device capable of suppressing spurious response due to non-harmonic higher-order modes 失效
标题翻译：能够抑制由非谐波高阶模式引起的寄生响应的声表面波器件
公开(公告)号：US06346761B1
公开(公告)日：2002-02-12
申请号：US09492078
申请日：2000-01-27
申请人： Atsushi Isobe , Mitsutaka Hikita , Kengo Asai , Atsushi Sumioka
发明人： Atsushi Isobe , Mitsutaka Hikita , Kengo Asai , Atsushi Sumioka
IPC分类号： H01L4104
CPC分类号： H03H9/1452 , H03H9/02818
摘要： A surface acoustic wave device which includes a piezoelectric substrate, and an interdigital transducer formed on a planar surface of the piezoelectric substrate, and having first and second bus bars, a first plurality of electrode fingers connected to the first bus bar, and a second plurality of electrode fingers connected to the second bus bar. The first and second plurality of electrode fingers of the interdigital transducer have an electrode cross region in which the first and second plurality of electrode fingers are arranged alternatively. Each boundary between the first and second bus bars and a grating region of the first and second plurality of electrode fingers is arranged such that the boundary is not substantially parallel, with a transmission direction of surface acoustic waves excited by the interdigital transducer.
摘要翻译：一种表面声波装置，包括压电基片和形成在压电基片的平面上的叉指换能器，并具有第一和第二汇流条，连接到第一汇流条的第一多个电极指，以及第二多个的电极指连接到第二汇流条。叉指式换能器的第一和第二多个电极指具有交替布置第一和第二多个电极指的电极交叉区域。第一和第二母线之间的每个边界以及第一和第二多个电极指的光栅区域被布置成使得边界基本上不平行，并且由叉指换能器激发的表面声波的透射方向。

9. 发明授权

US5814917A Surface acoustic wave equipment 失效
标题翻译：表面声波设备
公开(公告)号：US5814917A
公开(公告)日：1998-09-29
申请号：US676683
申请日：1996-07-10
申请人： Atsushi Isobe , Mitsutaka Hikita , Chisaki Takubo , Kengo Asai
发明人： Atsushi Isobe , Mitsutaka Hikita , Chisaki Takubo , Kengo Asai
IPC分类号： H03H9/02 , H03H9/145 , H03H9/25 , H01L41/04
CPC分类号： H03H9/02559 , H03H9/14538
摘要： Aluminum is used for the interdigital transducer mounted on a piezoelectric substrate to realize a surface acoustic wave transducer having a small capacity ratio, no spurious resonance, and a low loss. A .theta. rotated Y cut lithium niobate single crystal piezoelectric substrate is used for the piezoelectric material, a metal film of which principal ingredient is aluminum is used for the interdigital transducer, the direction of the interdigital transducer is made parallel to the X-axis of the lithium niobate single crystal, and thick h and electrode pitch P of the interdigital transducer have the following relationship: (.theta.+5).sup.2 /300+11/12.ltoreq.h/P.times.100-8.ltoreq.-0.0001.times.(.theta.+5).sup.3 +0.1625.times.(.theta.+5)+5.5 and -30.ltoreq..theta..ltoreq.20.
摘要翻译：铝用于安装在压电基板上的叉指换能器，以实现具有小容量比，无杂散谐振和低损耗的表面声波换能器。使用θ旋转的Y切割的铌酸锂单晶压电基板用于压电材料，主要成分为铝的金属膜用于叉指式换能器，叉指式换能器的方向与X轴的X轴平行铌酸锂单晶，并且叉指换能器的厚h和电极间距P具有以下关系：（θ+5）2/300 + 11/12

10. 发明授权

US07221242B2 Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same 失效
标题翻译：体声波谐振器及其制造方法，使用其的滤波器，使用其的半导体集成电路器件，以及使用其的高频模块
公开(公告)号：US07221242B2
公开(公告)日：2007-05-22
申请号：US11067374
申请日：2005-02-28
申请人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe , Mitsutaka Hikita
发明人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe , Mitsutaka Hikita
IPC分类号： H03H9/00 , H01L41/00
CPC分类号： H03H3/02 , H03H9/0542 , H03H9/0571 , H03H9/174 , H03H9/564 , H03H9/706
摘要： A bulk acoustic wave resonator in which the problem of the technology for forming the diaphragm structure is resolved, which is more compact and improved the frequency accuracy, and the manufacturing method thereof, a filter using the same, a semiconductor integrated circuit device using the same, and a high frequency module using the same are provided. The bulk acoustic wave resonator according to the present invention comprises a substrate having a first surface and a second surface opposite to the first surface, and a staked resonator including a first electrode film in contact with the first surface, a piezoelectric film overlaying the first electrode film and a second electrode film overlaying the piezoelectric film. The substrate is provided with an air gap including a first aperture opening at the first surface and a second aperture opening at the second surface at the position corresponding to the staked resonator, respectively and having air gap generally vertical shape to the first surface, and another air gap having a tapered shape in the vicinity of the first surface.
摘要翻译：解决了用于形成隔膜结构的技术的问题的体声波谐振器，其更紧凑并且提高了频率精度，其制造方法，使用该隔膜结构的滤波器，使用该隔膜结构的半导体集成电路器件，并且提供使用该模块的高频模块。根据本发明的体声波谐振器包括具有与第一表面相对的第一表面和第二表面的基板，以及包括与第一表面接触的第一电极膜的支架谐振器，覆盖第一电极的压电膜膜和覆盖压电膜的第二电极膜。衬底设置有气隙，该空气间隙包括在第一表面处的第一孔径开口和位于对应于桩状共振器的位置处的第二表面处的第二孔口开口，并且具有大致垂直于第一表面的气隙，另一个气隙在第一表面附近具有锥形形状。

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