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1. 发明申请

US20130075805A1 METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：制造非易失性半导体存储器件和非易失性半导体存储器件的方法
公开(公告)号：US20130075805A1
公开(公告)日：2013-03-28
申请号：US13419984
申请日：2012-03-14
申请人： Mitsuru SATO , Megumi ISHIDUKI , Masaru KIDOH , Atsushi KONNO , Yoshihiro AKUTSU , Masaru KITO , Yoshiaki FUKUZUMI , Ryota KATSUMATA
发明人： Mitsuru SATO , Megumi ISHIDUKI , Masaru KIDOH , Atsushi KONNO , Yoshihiro AKUTSU , Masaru KITO , Yoshiaki FUKUZUMI , Ryota KATSUMATA
IPC分类号： H01L29/792 , H01L21/425
CPC分类号： H01L29/7926 , H01L21/265 , H01L27/11582 , H01L29/0676 , H01L29/66833
摘要： According to one embodiment, a method for manufacturing a nonvolatile semiconductor storage device includes; forming a first and a second stacked bodies; forming a through hole penetrating through the first stacked body, a second portion communicating with the first portion and penetrating through a select gate, and a third portion communicating with the second portion and penetrating through a second insulating layer; forming a memory film, a gate insulating film, and a channel body; forming a third insulating layer inside the channel body; forming a first embedded portion above a boundary portion inside the third portion; exposing the channel body by removing part of the first embedded portion and part of the third insulating layer in the third portion; and embedding a second embedded portion including silicon having higher impurity concentration than the first embedded portion above the first embedded portion inside the third portion.
摘要翻译：根据一个实施例，一种用于制造非易失性半导体存储装置的方法包括：形成第一和第二堆叠体; 形成穿过所述第一层叠体的通孔，与所述第一部分连通并穿过选择栅极的第二部分，以及与所述第二部分连通并穿透第二绝缘层的第三部分; 形成记忆膜，栅极绝缘膜和通道体; 在通道体内形成第三绝缘层; 在第三部分内部的边界部分上方形成第一嵌入部分; 通过去除第三部分中的第一嵌入部分和第三绝缘层的一部分的一部分来暴露通道体; 以及在所述第三部分内部嵌入包含比所述第一嵌入部分上方的所述第一嵌入部分杂质浓度高的硅的第二嵌入部分。

2. 发明申请

US20110062503A1 SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20110062503A1
公开(公告)日：2011-03-17
申请号：US12720502
申请日：2010-03-09
申请人： Atsushi KONNO , Hiroyuki KANAYA
发明人： Atsushi KONNO , Hiroyuki KANAYA
IPC分类号： H01L27/108
CPC分类号： H01L27/11507 , H01L21/76829
摘要： A semiconductor memory device includes a plurality of transistors on a semiconductor substrate; a first interlayer dielectric film on the transistors; a plurality of ferroelectric capacitors on the first interlayer dielectric film; a first hydrogen barrier film covering an upper surface and a side surface of each of the ferroelectric capacitors; a second interlayer dielectric film above the ferroelectric capacitors, the second interlayer dielectric film being buried to have a void or hole between two adjacent ferroelectric capacitors out of the ferroelectric capacitors; a cover dielectric film covering the second interlayer dielectric film to close an opening of the void or hole; and a second hydrogen barrier film covering the cover dielectric film.
摘要翻译：半导体存储器件包括半导体衬底上的多个晶体管; 晶体管上的第一层间绝缘膜; 第一层间电介质膜上的多个铁电电容器; 覆盖每个强电介质电容器的上表面和侧表面的第一氢阻挡膜; 在所述铁电电容器上方的第二层间电介质膜，所述第二层间绝缘膜被埋入以在所述铁电电容器中的两个相邻的强电介质电容器之间具有空隙或孔; 覆盖所述第二层间电介质膜以封闭所述空隙或孔的开口的覆盖电介质膜; 以及覆盖覆盖电介质膜的第二氢阻挡膜。

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