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1. 发明申请

US20060246314A1 Method of producing a heat dissipation substrate of molybdenum powder impregnated with copper with rolling in primary and secondary directions 审中-公开
标题翻译：在一次方向和二次方向上轧制铜的钼粉末的散热基板的制造方法
公开(公告)号：US20060246314A1
公开(公告)日：2006-11-02
申请号：US11473049
申请日：2006-06-23
申请人： Mitsuo Osada , Norio Hirayama , Tadashi Arikawa , Yoshinari Amano , Hidetoshi Maesato , Hidefumi Hayashi , Hiroshi Murai
发明人： Mitsuo Osada , Norio Hirayama , Tadashi Arikawa , Yoshinari Amano , Hidetoshi Maesato , Hidefumi Hayashi , Hiroshi Murai
IPC分类号： C22C9/00 , B32B15/20
CPC分类号： C22C1/0475 , B22F2998/10 , C22C27/04 , C22F1/08 , C22F1/18 , H01L21/4878 , H01L23/047 , H01L23/3736 , H01L24/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/01019 , H01L2924/01078 , H01L2924/01322 , H01L2924/09701 , H01L2924/15312 , H01L2924/16195 , Y10T428/1291 , B22F3/02 , B22F3/26 , B22F3/18 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a molybdenum-copper composite and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3×10−6/K at 30-800° C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate (13) of a ceramic package (11).
摘要翻译：用于半导体安装散热基板的材料包括通过将熔融的铜浸渍到钼粉末压块的粉末颗粒之间的空隙中而获得的铜 - 钼轧制复合材料，以获得钼 - 铜复合材料，然后轧制复合材料。在板材的最终轧制方向上，在30-800℃，线膨胀系数为8.3×10 -6 / K。半导体安装散热基板的材料具有优异的热对CMC包层材料具有导电性，并且易于通过冲压机进行机械加工。衬底材料用作陶瓷封装（11）的散热衬底（13）。

2. 发明授权

US07083759B2 Method of producing a heat dissipation substrate of molybdenum powder impregnated with copper with rolling in primary and secondary directions 有权
标题翻译：在一次方向和二次方向上轧制铜的钼粉末的散热基板的制造方法
公开(公告)号：US07083759B2
公开(公告)日：2006-08-01
申请号：US10009822
申请日：2001-04-12
申请人： Mitsuo Osada , Norio Hirayama , Tadashi Arikawa , Yoshinari Amano , Hidetoshi Maesato , Hidefumi Hayashi , Hiroshi Murai
发明人： Mitsuo Osada , Norio Hirayama , Tadashi Arikawa , Yoshinari Amano , Hidetoshi Maesato , Hidefumi Hayashi , Hiroshi Murai
IPC分类号： B22F3/02 , B22F3/26 , B22F7/02 , C21D1/00
CPC分类号： H01L23/3733 , B22F2998/10 , C22C1/0475 , C22C27/04 , C22F1/08 , H01L21/4878 , H01L23/047 , H01L23/3736 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2924/01019 , Y10T29/302 , Y10T29/49993 , B22F3/02 , B22F3/26 , B22F7/04 , H01L2924/00014
摘要： A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a composite of molybdenum and copper and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3×10−6/K at 30–800° C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate (13) of a ceramic package (11).
摘要翻译：用于半导体安装散热基板的材料包括通过将熔融的铜浸渍到钼粉末压块的粉末颗粒之间的空隙中而获得的铜 - 钼轧制复合材料，以获得钼和铜的复合物，然后轧制复合材料。在板材的最终轧制方向上，在30-800℃，线膨胀系数为8.3×10 -6 / K。半导体安装散热基板的材料具有优异的热对CMC包层材料具有导电性，并且易于通过冲压机进行机械加工。衬底材料用作陶瓷封装（11）的散热衬底（13）。

3. 发明授权

US06926861B2 Semiconductor package and method for producing heat-radiating substrate for it 有权
标题翻译：半导体封装及其制造用散热基板的方法
公开(公告)号：US06926861B2
公开(公告)日：2005-08-09
申请号：US10671712
申请日：2003-09-29
申请人： Norio Hirayama , Mitsuo Osada , Akira Ichida , Yoshinari Amano , Kiyoshi Asai , Hidetoshi Maesato , Tadashi Arikawa , Kenji Sakimae
发明人： Norio Hirayama , Mitsuo Osada , Akira Ichida , Yoshinari Amano , Kiyoshi Asai , Hidetoshi Maesato , Tadashi Arikawa , Kenji Sakimae
IPC分类号： B21B3/00 , B22F3/02 , B22F3/04 , B22F3/26 , C04B37/02 , H01L21/48 , H01L23/02 , H01L23/06 , H01L23/08 , H01L23/373 , B22F3/14
CPC分类号： B22F3/045 , B22F3/02 , B22F2998/10 , H01L21/4871 , H01L21/4878 , H01L23/3733 , H01L2924/0002 , B22F3/26 , H01L2924/00
摘要： A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu—Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu—Mo composite, and rolling the Cu—Mo composite into a sheet substrate. In the isostatic molding process, at least two or more plates 27, 29, 31, 33, 35 and 37 are disposed adjacent to the inner surface of a side wall as divided into at least two portions, Mo powder is filled into the space as formed by those plates 27, 29, 31, 33, 35 and 37 with covering the Mo powder compact with a flexible cover, such as a rubber medium 39 or the like, to prepare a composite, then the resulting composite is put into a pressure tank, an external isostatic pressure is applied thereto against the flexible cover, and the plates are slid via the cover along the side wall thereby compressing the composite between the thus-slid plates into an Mo green compact.
摘要翻译：用半导体芯片安装的封装具有厚度小于0.4mm的Cu-Mo复合材料的散热基板，其通过将铜（Cu）熔体的30〜40质量％浸渍成为钼。散热基板是通过等静压成型制成Mo压坯，在Mo生坯上安装Cu加热，将铜浸渍到Mo生坯中得到Cu-Mo复合体，将Cu-Mo 复合成片状基材。在等静压成型工艺中，至少两个或更多个板27,29,31,33,35和37与侧壁的内表面相邻设置，分为至少两部分，Mo粉末被填充到空间中由这些板27,29,31,33,35和37形成，并用柔性覆盖物（例如橡胶介质39等）覆盖Mo粉末压块以制备复合材料，然后将所得复合材料压入在其上施加有外部等静压力抵靠柔性盖，并且板沿着侧壁通过盖板滑动，从而将由此滑动的板之间的复合材料压缩成Mo压坯。

4. 发明授权

US06693353B1 Semiconductor package and method for producing heat-radiating substrate for it 有权
标题翻译：半导体封装及其制造用散热基板的方法
公开(公告)号：US06693353B1
公开(公告)日：2004-02-17
申请号：US09252880
申请日：1999-02-18
申请人： Norio Hirayama , Mitsuo Osada , Akira Ichida , Yoshinari Amano , Kiyoshi Asai , Hidetoshi Maesato , Tadashi Arikawa , Kenji Sakimae
发明人： Norio Hirayama , Mitsuo Osada , Akira Ichida , Yoshinari Amano , Kiyoshi Asai , Hidetoshi Maesato , Tadashi Arikawa , Kenji Sakimae
IPC分类号： H01L2348
CPC分类号： B22F3/045 , B22F3/02 , B22F2998/10 , H01L21/4871 , H01L21/4878 , H01L23/3733 , H01L2924/0002 , B22F3/26 , H01L2924/00
摘要： A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu—Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu—Mo composite, and rolling the Cu—Mo composite into a sheet substrate. In the isostatic molding process, at least two or more plates. 27, 29, 31, 33, 35 and 37 are disposed adjacent to the inner surface of a side wall as divided into at least two portions, Mo powder is filled into the space as formed by those plates 27, 29, 31, 33, 35 and 37 with covering the Mo powder compact with a flexible cover, such as a rubber medium 39 or the like, to prepare a composite, then the resulting composite is put into a pressure tank, an external isostatic pressure is applied thereto against the flexible cover, and the plates are slid via the cover along the side wall thereby compressing the composite between the thus-slid plates into an Mo green compact.
摘要翻译：用半导体芯片安装的封装具有厚度小于0.4mm的Cu-Mo复合材料的散热基板，其通过将铜（Cu）熔体的30〜40质量％浸渍成为钼。散热基板是通过等静压成型制成Mo压坯，在Mo生坯上安装Cu加热，将铜浸渍到Mo生坯中得到Cu-Mo复合体，将Cu-Mo 复合成片状基材。在等静压成型工艺中，至少有两个以上的板。 27,29,31,33,35,37与侧壁的内表面相邻设置，分为至少两部分，Mo粉末被填充到由这些板27,29,31,33,33形成的空间中， 35和37，用橡胶介质39等柔性盖覆盖Mo粉末压块以制备复合材料，然后将所得的复合材料放入压力罐中，对其施加外部等静压盖板，并且板沿着侧壁通过盖板滑动，从而将由此滑动的板材之间的复合材料压缩成Mo压坯。

5. 发明授权

US06271585B1 Heat sink substrate consisting essentially of copper and molybdenum and method of manufacturing the same 失效
标题翻译：基本上由铜和钼组成的散热基板及其制造方法
公开(公告)号：US06271585B1
公开(公告)日：2001-08-07
申请号：US09110669
申请日：1998-07-07
申请人： Mitsuo Osada , Akira Ichida , Norio Hirayama , Kiyoshi Asai , Hidetoshi Maesato , Tadashi Arikawa
发明人： Mitsuo Osada , Akira Ichida , Norio Hirayama , Kiyoshi Asai , Hidetoshi Maesato , Tadashi Arikawa
IPC分类号： H01L2334
CPC分类号： C22C1/0475 , B22F2998/10 , H01L21/4878 , H01L23/3733 , H01L2924/0002 , H05K1/0306 , H05K3/102 , B22F1/0003 , B22F3/10 , B22F3/26 , B22F3/18 , H01L2924/00
摘要： A heat sink substrate comprises a Cu—Mo composite substrate composed of a molybdenum (Mo) green compact with which Copper (Cu) of 20-60 wt % is impregnated. It is preferable that the heat sink substrate is a rolled plate obtained by repeatedly warm rolling or cold rolling the Cu—Mo composite substrate and that the rolled plate does not include any fine void and unevenly impregnated copper, that is, copper and molybdenum are uniformly distributed therein.
摘要翻译：散热基板包括由钼（Mo）生坯组成的Cu-Mo复合衬底，其中浸渍有20-60重量％的铜（Cu）。优选的是，散热基板是通过反复热轧或冷轧Cu-Mo复合基板而获得的轧制板，并且轧制板不包括任何细小的空隙和不均匀浸渍的铜，即铜和钼均匀分布在其中。

6. 发明授权

US06475429B2 Heat sink substrate consisting essentially of copper and molybdenum and method of manufacturing the same 有权
标题翻译：基本上由铜和钼组成的散热基板及其制造方法
公开(公告)号：US06475429B2
公开(公告)日：2002-11-05
申请号：US09875149
申请日：2001-06-07
申请人： Mitsuo Osada , Akira Ichida , Norio Hirayama , Kiyoshi Asai , Hidetoshi Maesato , Tadashi Arikawa
发明人： Mitsuo Osada , Akira Ichida , Norio Hirayama , Kiyoshi Asai , Hidetoshi Maesato , Tadashi Arikawa
IPC分类号： B22F324
CPC分类号： C22C1/0475 , B22F2998/10 , H01L21/4878 , H01L23/3733 , H01L2924/0002 , H05K1/0306 , H05K3/102 , B22F1/0003 , B22F3/10 , B22F3/26 , B22F3/18 , H01L2924/00
摘要： A heat sink substrate comprises a Cu—Mo composite substrate composed of a molybdenum (Mo) green compact with which Copper (Cu) of 20-60 wt % is impregnated. It is preferable that the heat sink substrate is a rolled plate obtained by repeatedly warm rolling or cold rolling the Cu—Mo composite substrate and that the rolled plate does not include any fine void and unevenly impregnated copper, that is, copper and molybdenum are uniformly distributed therein.
摘要翻译：散热基板包括由钼（Mo）生坯组成的Cu-Mo复合衬底，其中浸渍有20-60重量％的铜（Cu）。优选的是，散热基板是通过反复热轧或冷轧Cu-Mo复合基板而获得的轧制板，并且轧制板不包括任何细小的空隙和不均匀浸渍的铜，即铜和钼均匀分布在其中。

7. 发明授权

US06233311B1 Rotary anode for X-ray tube comprising an Mo-containing layer and a W-containing layer laminated to each other and method of producing the same 失效
公开(公告)号：US06233311B1
公开(公告)日：2001-05-15
申请号：US09258077
申请日：1999-02-26
申请人： Masayuki Itoh , Koji Asahi , Mitsuo Osada , Yoshinari Amano , Tomohiro Takida
发明人： Masayuki Itoh , Koji Asahi , Mitsuo Osada , Yoshinari Amano , Tomohiro Takida
IPC分类号： H01J3510
CPC分类号： H01J35/10 , H01J2235/081 , H01J2235/085 , H01J2235/086
摘要： Provided are a high-quality and high-reliability rotary anode target for X-ray tubes, of which the mechanical strength at high temperatures is increased and which is applicable not only to low-speed rotation (at least 3,000 rpm) but also even to high-speed rotation at high temperatures, and also a method for producing it. The rotary anode has a two-layered structure to be formed by laminating an Mo alloy substrate that comprises from 0.2% by weight to 1.5% by weight of TiC with the balance of substantially Mo, and an X-ray generating layer of a W—Re alloy that overlies the substrate.

8. 发明授权

US06595821B2 Rotary anode for X-ray tube comprising an Mo-containing layer and a W-containing layer laminated to each other and method of producing the same 失效
标题翻译：包含相互层压的含Mo层和含W层的X射线管用旋转阳极及其制造方法
公开(公告)号：US06595821B2
公开(公告)日：2003-07-22
申请号：US09838289
申请日：2001-04-20
申请人： Masayuki Itoh , Koji Asahi , Mitsuo Osada , Yoshinari Amano , Tomohiro Takida
发明人： Masayuki Itoh , Koji Asahi , Mitsuo Osada , Yoshinari Amano , Tomohiro Takida
IPC分类号： H01J900
CPC分类号： H01J35/10 , H01J2235/081 , H01J2235/085 , H01J2235/086
摘要： A high-quality and high-reliability rotary anode target for X-ray tubes, of which the mechanical strength at high temperatures is increased and which is applicable not only to low-speed rotation (at least 3,000 rpm) but also even to high-speed rotation at high temperatures, and also a method for producing it. The rotary anode has a two-layered structure to be formed by laminating an Mo alloy substrate that comprises from 0.2% by weight to 1.5% by weight of TiC with the balance of substantially Mo, and an X-ray generating layer of a W—Re alloy that overlies the substrate.
摘要翻译：用于X射线管的高质量和高可靠性的旋转阳极靶，其中高温下的机械强度增加，并且不仅适用于低速旋转（至少3,000rpm），而且还适用于高温高温下的高速旋转，以及其制造方法。旋转阳极具有通过层压包含0.2重量％至1.5重量％的TiC，余量基本上为Mo的Mo合金基材和W-X系的X射线产生层而形成的双层结构，覆盖衬底的Re合金。

9. 发明授权

US4457780A Electric contact materials 失效
标题翻译：电接触材料
公开(公告)号：US4457780A
公开(公告)日：1984-07-03
申请号：US367603
申请日：1982-04-12
申请人： Mitsuo Osada , Nobuhito Kuroishi , Yoshinari Amano , Akira Fukui
发明人： Mitsuo Osada , Nobuhito Kuroishi , Yoshinari Amano , Akira Fukui
IPC分类号： C22C32/00 , H01H1/0233 , B22F3/00
CPC分类号： C22C32/0084 , H01H1/0233
摘要： The invention relates to electric contact materials for use in switches, such as moulded circuit breakers, air circuit breakers, magnetic switches, etc.The electric contact materials comprise 5-60 weight % iron group metals, 1-11 weight % graphite, 5-70 weight % refractory materials, and the residual part consisting of silver, said refractory materials being held in the state of dispersion in the iron group metals and/or silver, thereby providing welding resistance, wear resistance, and insulation resistance as well as high practical utility of low temperature rise.
摘要翻译：本发明涉及用于开关的电接触材料，例如模制断路器，空气断路器，磁性开关等。电接触材料包括5-60重量％的铁族金属，1-11重量％的石墨， 70重量％的耐火材料和由银组成的残留部分，所述耐火材料保持在铁族金属和/或银中的分散状态，从而提供耐焊接性，耐磨性和绝缘电阻以及高实用性低温升高的效用

10. 发明授权

US5481136A Semiconductor element-mounting composite heat-sink base 失效
标题翻译：半导体元件安装复合散热器基座
公开(公告)号：US5481136A
公开(公告)日：1996-01-02
申请号：US420901
申请日：1995-04-11
申请人： Kenichiro Kohmoto , Mitsuo Osada
发明人： Kenichiro Kohmoto , Mitsuo Osada
IPC分类号： H01L23/367 , H01L23/34 , H01L23/52
CPC分类号： H01L23/3677 , H01L2224/32188 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L24/45 , H01L24/48 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/14 , H01L2924/15312 , H01L2924/1532 , H01L2924/16195
摘要： A semiconductor-mounting heat-sink base for use with a plastic package or flexible printed wiring board which eliminates the possibility of semiconductor or package reliability being adversely affected due to a difference in thermal expansion coefficient between the heat sink base and the semiconductor or plastic package. The heat-sink base has a semiconductor-mounting portion comprising a Cu--W or Cu--Mo composite alloy containing 5 to 25 wt. % of copper made by an infiltration process, and a portion adjacent to a plastic package which comprises a copper or copper alloy containing not less than 95% of copper.
摘要翻译：一种与塑料封装或柔性印刷电路板一起使用的半导体安装散热器基座，其消除了由于散热器基座和半导体或塑料封装之间的热膨胀系数的差异而导致半导体或封装可靠性受到不利影响的可能性。散热器底座具有包含Cu-W或Cu-Mo复合合金的半导体安装部分，其含有5至25wt。通过渗透方法制造的铜的百分比，以及与包含不少于95％铜的铜或铜合金的塑料封装相邻的部分。

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