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    • 8. 发明授权
    • Vacuum switch contact material and method of manufacturing it
    • 真空开关触点材料及其制造方法
    • US5225381A
    • 1993-07-06
    • US874373
    • 1992-04-27
    • Eizo NayaMitsuhiro Okumura
    • Eizo NayaMitsuhiro Okumura
    • C22C32/00H01H1/02
    • C22C32/0021H01H1/0203
    • A vacuum switch contact material consists essentially of a mixture of Cu and Cr.sub.x O.sub.y (x=1 to 2, y=0 to 3) wherein Cr.sub.x O.sub.y is in a particulate state, the center part of the particles consists of Cr.sub.2 O.sub.3 (x=2, y=3), and the peripheral part of the particles consists of Cr (x=1, y=0). The Cr.sub.x O.sub.y particles having Cr.sub.2 O.sub.3 central part and Cr periphery can be formed by reducing the surface of Cr.sub.2 O.sub.3 particles. Cu may be infiltrated into the open pores of Cr.sub.x O.sub.y particles after a green compact of Cr.sub.2 O.sub.3 is formed. Alternatively, a mixture of Cr.sub.2 O.sub.y particles and Cu particles may be formed into a green compact, which may then be sintered. Still alternatively, a mixture of Cr.sub.2 O.sub.y particles and Cu particles may be hot-pressed.
    • 真空开关触点材料基本上由Cu和Cr x O y(x = 1至2,y = 0至3)的混合物组成,其中Cr x O y处于颗粒状态,颗粒的中心部分由Cr2O3(x = 2,y = 3),并且颗粒的周边部分由Cr(x = 1,y = 0)组成。 可以通过减少Cr2O3颗粒的表面形成具有Cr 2 O 3中心部分和Cr外围的Cr x O y颗粒。 在形成Cr 2 O 3的生坯后,Cu可以渗透到CrxOy颗粒的开孔中。 或者,可以将Cr 2 O y颗粒和Cu颗粒的混合物形成为可以烧结的生坯。 或者,可以热压Cr2Oy颗粒和Cu颗粒的混合物。
    • 10. 发明授权
    • Contact material for vacuum circuit interrupter
    • 真空断路器的触点材料
    • US4540861A
    • 1985-09-10
    • US599359
    • 1984-04-12
    • Mitsuhiro OkumuraEizo NayaMitsumasa YoritaYasushi Takeya
    • Mitsuhiro OkumuraEizo NayaMitsumasa YoritaYasushi Takeya
    • H01H33/66C22C9/00H01H1/02
    • C22C9/00H01H1/0203
    • A contact material for use in a vacuum circuit interrupter which simultaneously provides superior current interrupting performance and breakdown voltage. The contact material of the invention includes components of copper, tantalum and at least one of cobalt and iron. Cobalt or iron should be present in an amount of 50 wt % or less, while the combination of tantalum and cobalt or iron should be present in an amount of at least 10 wt %. A fourth component of at least one of titanium, zirconium and aluminum may be added. Also, there may be included a fifth component containing at least one of a low melting point metal, alloys of a low melting point metal, intermetallic compounds of a low melting point metal, and oxides thereof, with the low melting point metal being at least one of bismuth, tellurium, antimony, thallium, lead, selenium, cerium and calcium in an amount of not more than 20 wt %.
    • 用于真空断路器的接触材料,其同时提供优异的电流中断性能和击穿电压。 本发明的接触材料包括铜,钽和钴和铁中的至少一种的组分。 钴或铁应以50重量%以下的量存在,而钽和钴或铁的组合应以至少10重量%的量存在。 可以添加钛,锆和铝中的至少一种的第四组分。 此外,还可以包括含有低熔点金属,低熔点金属的合金,低熔点金属的金属间化合物及其氧化物中的至少一种的第五成分,低熔点金属为至少 铋,碲,锑,铊,铅,硒,铈和钙中的一种不超过20重量%。