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1. 发明申请

US20060111550A1 Top coating composition for photoresist and method of forming photoresist pattern using same 有权
标题翻译：用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US20060111550A1
公开(公告)日：2006-05-25
申请号：US11281775
申请日：2005-11-17
申请人： Mitsuhiro Hata , Man-Hyoung Ryoo , Sang-Gyun Woo , Hyun-Woo Kim , Jin-Young Yoon , Jung-Hwan Hah
发明人： Mitsuhiro Hata , Man-Hyoung Ryoo , Sang-Gyun Woo , Hyun-Woo Kim , Jin-Young Yoon , Jung-Hwan Hah
IPC分类号： C08F6/00
CPC分类号： G03F7/11 , C08F220/06 , C08F220/18 , G03F7/2041 , Y10S430/146 , Y10S430/162
摘要： Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03≦m/(m+n+q)≦0.97, 0.03≦n/(m+n+q)≦0.97, 0≦q/(m+n+q)≦0.5; and wherein the solvent includes deionized water.
摘要翻译：提供能够用于浸没式光刻的顶涂层组合物，以及使用其形成光刻胶图案的方法。顶部涂料组合物包括：聚合物，碱; 和溶剂，其中所述聚合物可以由式I表示：其中R 1和R 2独立地选自氢，氟，甲基和三氟甲基 ; X是羧酸基或磺酸基; Y是羧酸基或磺酸基，其中羧酸基或磺酸基被保护; Z是选自乙烯基单体，亚烷基二醇，马来酸酐，乙烯亚胺，含恶唑啉的单体，丙烯腈，烯丙基酰胺，3,4-二氢吡喃，2,3-二氢呋喃，四氟乙烯，或其组合; 并且m，n和q是其中0.03 <= m /（m + n + q）<=0.97,0.03≤n/（m + n + q）<= 0.97,0 <= q /（m + n + q）<= 0.5; 并且其中所述溶剂包括去离子水。

2. 发明授权

US07384730B2 Top coating composition for photoresist and method of forming photoresist pattern using same 有权
标题翻译：用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US07384730B2
公开(公告)日：2008-06-10
申请号：US11281775
申请日：2005-11-17
申请人： Mitsuhiro Hata , Man-Hyoung Ryoo , Sang-Gyun Woo , Hyun-Woo Kim , Jin-Young Yoon , Jung-Hwan Hah
发明人： Mitsuhiro Hata , Man-Hyoung Ryoo , Sang-Gyun Woo , Hyun-Woo Kim , Jin-Young Yoon , Jung-Hwan Hah
IPC分类号： G03F7/38 , H01L21/027 , G03F7/11
CPC分类号： G03F7/11 , C08F220/06 , C08F220/18 , G03F7/2041 , Y10S430/146 , Y10S430/162
摘要： Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03≦m/(m+n+q)≦0.97, 0.03≦n/(m+n+q)≦0.97, 0≦q/(m+n+q)≦0.5; and wherein the solvent includes deionized water.
摘要翻译：提供能够用于浸没式光刻的顶涂层组合物，以及使用其形成光刻胶图案的方法。顶部涂料组合物包括：聚合物，碱; 和溶剂，其中所述聚合物可以由式I表示：其中R 1和R 2独立地选自氢，氟，甲基和三氟甲基 ; X是羧酸基或磺酸基; Y是羧酸基或磺酸基，其中羧酸基或磺酸基被保护; Z是选自乙烯基单体，亚烷基二醇，马来酸酐，乙烯亚胺，含恶唑啉的单体，丙烯腈，烯丙基酰胺，3,4-二氢吡喃，2,3-二氢呋喃，四氟乙烯，或其组合; 并且m，n和q是整数，其中<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.03 <= m /（m + n + q）<= 0.97， in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.03 <= n /（m + n + q）<= 0.97，<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead” α> 0 <= q /（m + n + q）<= 0.5; <？in-line-formula description =“In-line Formulas”end =“tail”？>，其中溶剂包括去离子水。

3. 发明申请

US20060275697A1 Top coating composition for photoresist and method of forming photoresist pattern using the same 审中-公开
标题翻译：用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US20060275697A1
公开(公告)日：2006-12-07
申请号：US11364707
申请日：2006-02-27
申请人： Mitsuhiro Hata , Man-Hyoung Ryoo , Hyun-Woo Kim , Sang-Gyun Woo , Jin-Young Yoon , Jung-Hwan Hah
发明人： Mitsuhiro Hata , Man-Hyoung Ryoo , Hyun-Woo Kim , Sang-Gyun Woo , Jin-Young Yoon , Jung-Hwan Hah
IPC分类号： G03C1/00
CPC分类号： G03F7/11 , G03F7/2041
摘要： Provided are a top coating composition for a photoresist which can be used in immersion lithography, and a method of forming a photoresist pattern using the same. The top coating composition includes: a polymer including at least three different structural repeating units including a first repeating unit comprising a carboxy group substituted by an alkyl protecting group or an acid-labile group, a second repeating unit comprising an acid group, and a third repeating unit comprising a polar group, and an organic solvent comprising an alcohol.
摘要翻译：提供了可用于浸没式光刻的光致抗蚀剂的顶涂层组合物，以及使用其形成光致抗蚀剂图案的方法。顶部涂料组合物包括：包含至少三种不同结构重复单元的聚合物，其包括第一重复单元，其包含被烷基保护基团或酸不稳定基团取代的羧基，第二重复单元包含酸基，和第三重复单元包含极性基团的重复单元和包含醇的有机溶剂。

4. 发明申请

US20050227492A1 Mask pattern for semiconductor device fabrication, method of forming the same, and method of fabricating finely patterned semiconductor device 审中-公开
标题翻译：用于半导体器件制造的掩模图案，其形成方法以及制造精细图案化的半导体器件的方法
公开(公告)号：US20050227492A1
公开(公告)日：2005-10-13
申请号：US11092003
申请日：2005-03-29
申请人： Jung-Hwan Hah , Hyun-Woo Kim , Jin-Young Yoon , Mitsuhiro Hata , Kolake Subramanya , Sang-Gyun Woo
发明人： Jung-Hwan Hah , Hyun-Woo Kim , Jin-Young Yoon , Mitsuhiro Hata , Kolake Subramanya , Sang-Gyun Woo
IPC分类号： G03F7/40 , G03F7/004 , G03F7/16 , H01L21/027 , H01L21/033 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/3213
CPC分类号： G03F7/40 , B82Y30/00 , G03F7/165 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： Provided are a mask pattern including a self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on at least a sidewall of the resist pattern. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.
摘要翻译：提供了包括自组装分子层的掩模图案，其形成方法和制造半导体器件的方法。掩模图案包括形成在半导体衬底上的抗蚀剂图案和形成在抗蚀图案的至少侧壁上的自组装分子层。为了形成掩模图案，首先，在覆盖基板的下层上形成抗蚀剂图案，使底层暴露于第一宽度。然后，在抗蚀剂图案的表面上选择性地形成自组装分子层，以使底层暴露于小于第一宽度的第二宽度。使用抗蚀剂图案和自组装分子层作为蚀刻掩模来蚀刻底层以获得精细图案。

5. 发明申请

US20060115747A1 Photo mask structure used during twice-performed photo process and methods of using the same 审中-公开
标题翻译：在两次照相过程中使用的光掩模结构及其使用方法
公开(公告)号：US20060115747A1
公开(公告)日：2006-06-01
申请号：US11281466
申请日：2005-11-18
申请人： Hyung-Rae Lee , Jin-Young Yoon , Sang-Gyun Woo , Man-Hyoung Ryoo , Min-Jeong Oh
发明人： Hyung-Rae Lee , Jin-Young Yoon , Sang-Gyun Woo , Man-Hyoung Ryoo , Min-Jeong Oh
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/70
摘要： A photo mask structure used during a twice-performed photo process and methods of using the same. The photo mask structure may include first mask patterns that correspond to first photoresist patterns during a first photo process performed on a first photoresist layer and second mask patterns that correspond to second photoresist patterns during a second photo process performed on a second photoresist layer. A method of using a photo mask structure may include performing a first photo process on a first photoresist layer using first mask patterns of the photo mask structure to form first photoresist patterns on a semiconductor substrate, and performing a second photo process on a second photoresist layer using second mask patterns of the photo mask structure to form second photoresist patterns on a semiconductor substrate, wherein the second photoresist patterns are interposed between the first photoresist patterns and overlap the first photoresist patterns.
摘要翻译：在两次照相处理过程中使用的光掩模结构及其使用方法。光掩模结构可以包括在对第一光致抗蚀剂层执行的第一光刻工艺期间对应于第一光致抗蚀剂图案的第一掩模图案和在对第二光致抗蚀剂层执行的第二光刻工艺期间对应于第二光致抗蚀剂图案的第二掩模图案。使用光掩模结构的方法可以包括使用光掩模结构的第一掩模图案在第一光致抗蚀剂层上进行第一光刻工艺以在半导体衬底上形成第一光致抗蚀剂图案，并且在第二光刻胶层上进行第二光刻工艺使用所述光掩模结构的第二掩模图案在半导体衬底上形成第二光致抗蚀剂图案，其中所述第二光致抗蚀剂图案插入在所述第一光致抗蚀剂图案之间并与所述第一光致抗蚀剂图案重叠。

6. 发明申请

US20080131817A1 Gettering members, methods of forming the same, and methods of performing immersion lithography using the same 有权
标题翻译：吸气构件，其形成方法以及使用其进行浸渍光刻的方法
公开(公告)号：US20080131817A1
公开(公告)日：2008-06-05
申请号：US11983993
申请日：2007-11-13
申请人： Jin-Young Yoon , Hyun-Woo Kim , Chan Hwang , Yun-Kyeong Jang
发明人： Jin-Young Yoon , Hyun-Woo Kim , Chan Hwang , Yun-Kyeong Jang
IPC分类号： G03F7/20 , H01L23/20 , H01L21/54
CPC分类号： G03F7/70916 , G03F7/70341
摘要： Provided herein are gettering members that include a monitor substrate and a conditioning layer thereon. Also provided herein are methods of forming gettering layers and methods of performing immersion lithography processes using the same.
摘要翻译：本文提供了包括监测器基板和其上的调理层的吸气构件。本文还提供了形成吸气层的方法和使用其进行浸渍光刻工艺的方法。

7. 发明申请

US20110227070A1 GETTERING MEMBERS, METHODS OF FORMING THE SAME, AND METHODS OF PERFORMING IMMERSION LITHOGRAPHY USING THE SAME 审中-公开
标题翻译：食物成员，其形成方法以及使用该方法进行渗透层析的方法
公开(公告)号：US20110227070A1
公开(公告)日：2011-09-22
申请号：US13051116
申请日：2011-03-18
申请人： Jin-Young Yoon , Hyun-Woo Kim , Chan Hwang , Yun-Kyeong Jang
发明人： Jin-Young Yoon , Hyun-Woo Kim , Chan Hwang , Yun-Kyeong Jang
IPC分类号： H01L29/02 , H01L29/06 , H01L21/322
CPC分类号： G03F7/70916 , G03F7/70341
摘要： Provided herein are gettering members that include a monitor substrate and a conditioning layer thereon. Also provided herein are methods of forming gettering layers and methods of performing immersion lithography processes using the same.
摘要翻译：本文提供了包括监测器基板和其上的调理层的吸气构件。本文还提供了形成吸气层的方法和使用其进行浸渍光刻工艺的方法。

8. 发明授权

US07932019B2 Gettering members, methods of forming the same, and methods of performing immersion lithography using the same 有权
标题翻译：吸气构件，其形成方法以及使用其进行浸渍光刻的方法
公开(公告)号：US07932019B2
公开(公告)日：2011-04-26
申请号：US11983993
申请日：2007-11-13
申请人： Jin-Young Yoon , Hyun-Woo Kim , Chan Hwang , Yun-Kyeong Jang
发明人： Jin-Young Yoon , Hyun-Woo Kim , Chan Hwang , Yun-Kyeong Jang
IPC分类号： G03F7/26
CPC分类号： G03F7/70916 , G03F7/70341
摘要： Provided herein are gettering members that include a monitor substrate and a conditioning layer thereon. Also provided herein are methods of forming gettering layers and methods of performing immersion lithography processes using the same.
摘要翻译：本文提供了包括监测器基板和其上的调理层的吸气构件。本文还提供了形成吸气层的方法和使用其进行浸渍光刻工艺的方法。

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