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1. 发明申请

US20140217548A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20140217548A1
公开(公告)日：2014-08-07
申请号：US14036122
申请日：2013-09-25
申请人： Mitsubishi Electric Corporation
发明人： Masahiro Totsuka
IPC分类号： H01L49/02
CPC分类号： H01L28/60 , H01L27/016
摘要： A semiconductor device includes a substrate, a metal film on a portion of the substrate, a first dielectric film having a first portion on the metal film and a second portion on the substrate, the second portion being integral with the first portion, a lower electrode on the first portion, a second dielectric film having a first portion on the lower electrode and a second portion on the first dielectric film, the second portion of the second dielectric film being integral with the first portion of said second dielectric film, an upper electrode on a portion of the second dielectric film, and a reinforcing film disposed on the second dielectric film and in contact with a side of the upper electrode.
摘要翻译：半导体器件包括衬底，在衬底的一部分上的金属膜，在金属膜上具有第一部分的第一电介质膜和在衬底上的第二部分，第二部分与第一部分成一体，下电极在第一部分上具有第二电介质膜，该第二电介质膜在下电极上具有第一部分，第二部分在第一电介质膜上，第二电介质膜的第二部分与所述第二电介质膜的第一部分成一体，上电极在所述第二电介质膜的一部分上，以及设置在所述第二电介质膜上并与所述上电极的一侧接触的增强膜。

2. 发明授权

US10388585B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US10388585B2
公开(公告)日：2019-08-20
申请号：US15660996
申请日：2017-07-27
申请人： Mitsubishi Electric Corporation
发明人： Takayuki Hisaka , Masahiro Totsuka , Tasuku Sumino
IPC分类号： H01L29/778 , H01L29/423 , H01L29/06 , H01L29/66 , H01L23/28 , H01L23/31 , H01L21/02 , H01L29/808 , H01L29/812 , H01L21/8252 , H01L23/29
摘要： A semiconductor device includes: a semiconductor substrate; a gate electrode on the semiconductor substrate; a SiN film on the semiconductor substrate and the gate electrode; and an oxide film on the SiN film, wherein the oxide film is an atomic layer deposition film including atomic layers alternately deposited.

3. 发明授权

US09035424B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09035424B2
公开(公告)日：2015-05-19
申请号：US14036122
申请日：2013-09-25
申请人： Mitsubishi Electric Corporation
发明人： Masahiro Totsuka
IPC分类号： H01L29/76 , H01L49/02 , H01L27/01
CPC分类号： H01L28/60 , H01L27/016
摘要： A semiconductor device includes a substrate, a metal film on a portion of the substrate, a first dielectric film having a first portion on the metal film and a second portion on the substrate, the second portion being integral with the first portion, a lower electrode on the first portion, a second dielectric film having a first portion on the lower electrode and a second portion on the first dielectric film, the second portion of the second dielectric film being integral with the first portion of said second dielectric film, an upper electrode on a portion of the second dielectric film, and a reinforcing film disposed on the second dielectric film and in contact with a side of the upper electrode.
摘要翻译：半导体器件包括衬底，在衬底的一部分上的金属膜，在金属膜上具有第一部分的第一电介质膜和在衬底上的第二部分，第二部分与第一部分成一体，下电极在第一部分上具有第二电介质膜，该第二电介质膜在下电极上具有第一部分，第二部分在第一电介质膜上，第二电介质膜的第二部分与所述第二电介质膜的第一部分成一体，上电极在所述第二电介质膜的一部分上，以及设置在所述第二电介质膜上并与所述上部电极的一侧接触的增强膜。

4. 发明授权

US11276530B2 Thin-layer capacitor and method of fabricating the same 有权
公开(公告)号：US11276530B2
公开(公告)日：2022-03-15
申请号：US16756299
申请日：2018-01-19
申请人： Mitsubishi Electric Corporation
发明人： Masahiro Totsuka
IPC分类号： H01G4/12 , H01G4/30 , H01G4/10 , H01L29/76 , H01L49/02 , H01L29/94
摘要： An MIM capacitor or an MIS capacitor in semiconductor devices is formed of a thin dielectric layer having a total film thickness less than 100-nm and including a high-dielectric-constant amorphous insulating film, high-breakdown-voltage amorphous films such as of SiO2, and high-dielectric-constant amorphous buffer films between an upper electrode and a lower electrode. The thin high-dielectric-constant amorphous insulation film is formed of a material having a property resistant to fracture although having properties of a large leakage current and a low breakdown voltage, to enhance reliability of the thin dielectric layer and to reduce the footprint thereof in the semiconductor device.

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