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    • 1. 发明授权
    • Semiconductor device having a single crystal semiconductor layer formed
on an insulating film
    • 具有形成在绝缘膜上的单晶半导体层的半导体器件
    • US5485028A
    • 1996-01-16
    • US38946
    • 1993-03-29
    • Minoru TakahashiMakoto YoshimiNaoyuki Shigyo
    • Minoru TakahashiMakoto YoshimiNaoyuki Shigyo
    • H01L21/336H01L29/786H01L27/01H01L29/76H01L29/94
    • H01L29/78696H01L29/66772
    • In a semiconductor device having a thin SOI film, the thickness of a semiconductor layer formed on an insulating film is so adjusted as to be less than a maximum distance allowable to complete depletion of the layer. While the thickness of a channel region is adjusted to be less than that of impurity-diffusion regions. Further, the insulating layer is so formed to have a thicker portion under the channel region, and thinner portions under the source region and the drain region as the impurity-diffusion regions. The semiconductor layer has steps at the boundaries between the channel region and the impurity-diffusion regions, and the top face of the channel region is arranged so as to be lower than the top faces of the impurity-diffusion regions. A region having a width less than the maximum depletion distance and an impurity concentration larger, than that of the channel region and less than that of the drain region is formed between the channel region and the drain region.
    • 在具有薄SOI膜的半导体器件中,形成在绝缘膜上的半导体层的厚度被调整为小于可以完全消耗该层的最大距离。 而通道区域的厚度被调整为小于杂质扩散区域的厚度。 此外,绝缘层被形成为在沟道区下方具有较厚部分,并且在作为杂质扩散区的源极区和漏极区下方具有较薄部分。 半导体层在沟道区域和杂质扩散区域之间的边界处具有台阶,并且沟道区域的顶面被布置成低于杂质扩散区域的顶面。 在沟道区域和漏极区域之间形成具有小于最大耗尽距离的宽度和杂质浓度大于沟道区域且小于漏极区域的区域的区域。
    • 2. 发明授权
    • Manufacturing method of semiconductor devices
    • 半导体器件的制造方法
    • US5100810A
    • 1992-03-31
    • US738443
    • 1991-07-31
    • Makoto YoshimiMinoru Takahashi
    • Makoto YoshimiMinoru Takahashi
    • H01L21/331H01L21/762H01L21/764H01L21/8222H01L21/8248H01L21/8249H01L21/86H01L27/06H01L27/12H01L29/165H01L29/73H01L29/786
    • H01L29/66265H01L21/76248H01L21/76264H01L21/764H01L21/8249H01L21/86H01L29/7317H01L29/78621H01L21/76272H01L21/76289Y10S148/15
    • On the surface of an insulating substrate, a semi-conductor layer composed of a semiconductor layer of a first conductivity type on which a high-concentration semiconductor layer of the first conductivity type is formed. By selectively etching the semiconductor layer, the high-concentration external base region of the first conductivity is left, and at the same time, only a thicker prospective internal base region just under the external base region and a prospective emitter region and prospective collector region, which are located on both sides of the prospective internal base region and have steps between themselves and the prospective internal base region, are left to form island regions. A sidewall insulating film is formed which covers at least the sidewalls on the prospective collector region side among sidewalls of the external base region and sidewalls at the steps of the prospective internal base region adjoining the sidewalls of the external base region. The emitter region and collector region of the second conductivity type are formed by ion implantation perpendicular to the substrate with the insulating film covering the external base region and the sidewall insulating film as blocking mask.
    • 在绝缘基板的表面上,形成由第一导电类型的半导体层构成的半导体层,其上形成有第一导电类型的高浓度半导体层。 通过选择性地蚀刻半导体层,留下第一导电性的高浓度外部基极区域,同时仅在外部基极区域正下方较厚的预期内部基极区域和预期的发射极区域和预期的集电极区域, 位于前瞻性内部基础地区两侧,并在自己与前瞻性内部基地区之间形成一个台阶,留在岛屿地区。 形成侧壁绝缘膜,该侧壁绝缘膜至少覆盖外部基极区域的侧壁中的前瞻性集电极区域侧的侧壁和邻接外部基极区域的侧壁的预期内部基极区域的侧壁。 通过垂直于衬底的离子注入形成第二导电类型的发射极区域和集电极区域,其中绝缘膜覆盖外部基极区域和侧壁绝缘膜作为阻挡掩模。
    • 8. 发明申请
    • Apparatus and method for matching and splicing webs
    • 用于匹配和拼接腹板的装置和方法
    • US20070044898A1
    • 2007-03-01
    • US11513043
    • 2006-08-31
    • Shinji HikitaKoji TonoharaMinoru Takahashi
    • Shinji HikitaKoji TonoharaMinoru Takahashi
    • B65H19/18B31F5/00G03D15/04
    • B65H19/1868B65H19/1836B65H2301/46222B65H2301/4631G03D15/043
    • A method for matching and splicing webs that splices, by use of splicing tape, a rear end of a strip-shaped flexible backing that is drawn and conveyed from an old roll and a front end of a strip-shaped flexible backing that is drawn and conveyed from a new roll, in a state in which the front end and the rear end are matched, wherein the method performs matching and splicing by executing: a preparation step of performing matching and splicing preparations by retaining a front end of a strip-shaped flexible backing of the new roll with one of a pair of cutting drums, and supplying splicing tape to a pair of splicing drums, respectively; a cutting step of cutting with the pair of cutting drums a strip-shaped flexible backing of the old roll and a strip-shaped flexible backing of the new roll in an overlapping state after the preparation step; a feeding step of feeding to a splicing position a rear end of the strip-shaped flexible backing of the old roll and a front end of the strip-shaped flexible backing of the new roll that are cut in the cutting step, as they are in a matched state; and a splicing step of using the pair of splicing drums to adhere and attach splicing tape to each of a front surface side and a rear surface side of a matching portion that is fed to a splicing position in the feeding step; wherein, in the preparation step, at least one of the pair of splicing drums is driven independently, and in the cutting step, the feeding step and the splicing step, the one of the pair of splicing drums is driven in synchrony with other drums.
    • 一种用于匹配和拼接网的方法,其通过使用拼接胶带将从拉伸的带状柔性背衬的拉伸和输送的带状柔性背衬的后端接合, 在前端和后端匹配的状态下,从新的卷筒输送,其中,所述方法通过执行以下步骤执行匹配和拼接:准备步骤,通过保持带状的前端 使用一对切割滚筒中的一个的新卷筒的柔性背衬,并将拼接胶带分别提供给一对拼接滚筒; 在所述制备步骤之后,以所述一对切割滚筒切割所述旧卷的带状柔性背衬和所述新卷的条形柔性背衬,处于重叠状态; 馈送步骤,将旧卷的带状柔性背衬的后端和新卷的带状柔性背衬的前端进给到拼接位置,该切割步骤在切割步骤中被切割 匹配状态 以及接合步骤,使用所述一对拼接鼓将拼接带粘合并将拼接带附接到在所述馈送步骤中被馈送到拼接位置的匹配部分的前表面侧和后表面侧中的每一个; 其特征在于,在上述制造工序中,独立地驱动上述一对拼接滚筒中的至少一个,并且在切断工序中,进给步骤和拼接工序中,一对拼接滚筒与其它滚筒同步地驱动。