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1. 发明授权

US08030111B2 Integration manufacturing process for MEMS device 有权
标题翻译： MEMS器件集成制造工艺
公开(公告)号：US08030111B2
公开(公告)日：2011-10-04
申请号：US12326355
申请日：2008-12-02
申请人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
发明人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
IPC分类号： H01L21/00
CPC分类号： B81C1/00301 , B81B2201/042 , B81B2207/097
摘要： A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.
摘要翻译：提供了一种用于制造MEMS器件的方法。该方法包括以下步骤：a）提供具有位于其上的凹面的第一基底，b）提供具有分别位于其上的连接区域和致动区域的第二基底，c）在致动区域中形成多个微结构，d）在所述连接区域和所述致动区域中的元件，e）在所述导电元件上形成绝缘层，以及f）将所述第一基板连接到所述连接区域以形成所述MEMS器件。凹面包含多个微结构。

2. 发明授权

US08318511B2 Integration manufacturing process for MEMS device 失效
公开(公告)号：US08318511B2
公开(公告)日：2012-11-27
申请号：US13343643
申请日：2012-01-04
申请人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
发明人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
IPC分类号： H01L31/26
CPC分类号： B81C1/00301 , B81B2201/042 , B81B2207/097
摘要： A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.

3. 发明申请

US20110174058A1 INTEGRATION MANUFACTURING PROCESS FOR MEMS DEVICE 有权
标题翻译： MEMS器件的集成制造工艺
公开(公告)号：US20110174058A1
公开(公告)日：2011-07-21
申请号：US13072879
申请日：2011-03-28
申请人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
发明人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
IPC分类号： G01M3/04 , H01L21/02
CPC分类号： B81C1/00301 , B81B2201/042 , B81B2207/097
摘要： A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.
摘要翻译：提供了一种用于制造MEMS器件的方法。该方法包括以下步骤：a）提供具有位于其上的凹面的第一基底，b）提供具有分别位于其上的连接区域和致动区域的第二基底，c）在致动区域中形成多个微结构，d）在所述连接区域和所述致动区域中的元件，e）在所述导电元件上形成绝缘层，以及f）将所述第一基板连接到所述连接区域以形成所述MEMS器件。凹面包含多个微结构。

4. 发明申请

US20050280331A1 Two-axis device and manufacturing method therefor 失效
标题翻译：双轴装置及其制造方法
公开(公告)号：US20050280331A1
公开(公告)日：2005-12-22
申请号：US10951529
申请日：2004-09-28
申请人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
发明人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
IPC分类号： B81B7/02 , B81C1/00 , C23F1/00 , C23F4/00 , G02B26/08 , G02B26/10 , H02N1/00
CPC分类号： G02B26/0841 , C23F4/00 , H02N1/006
摘要： A two-axis device is provided. The two-axis device includes a first substrate having a plurality of electrodes, a first connecting layer located on the first substrate, an actuating layer, a second connecting layer and a cover. The actuating layer is connected to the first substrate via the first connecting layer and includes a circular portion, an actuating portion, a first shaft and a second shaft. The second connecting layer is connected to the actuating layer and the cover is connected to the actuating layer via the second connecting layer. In addition, a vacuum concavity is formed by the first substrate, the first connecting layer, the actuating layer, the second connecting layer and the cover. The actuating portion and the first shaft are located in the vacuum concavity, and the second shaft extends outside of the vacuum concavity.
摘要翻译：提供了两轴设备。双轴装置包括具有多个电极的第一基板，位于第一基板上的第一连接层，致动层，第二连接层和盖。所述致动层经由所述第一连接层连接到所述第一基板，并且包括圆形部分，致动部分，第一轴和第二轴。第二连接层连接到致动层，并且盖通过第二连接层连接到致动层。此外，由第一基板，第一连接层，致动层，第二连接层和盖形成真空凹部。致动部和第一轴位于真空凹部中，第二轴延伸到真空凹部的外侧。

5. 发明申请

US20050280116A1 Integration manufacturing process for MEMS device 审中-公开
标题翻译： MEMS器件集成制造工艺
公开(公告)号：US20050280116A1
公开(公告)日：2005-12-22
申请号：US11091062
申请日：2005-03-28
申请人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
发明人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
IPC分类号： H01L29/00
CPC分类号： B81C1/00301 , B81B2201/042 , B81B2207/097
摘要： A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.
摘要翻译：提供了一种用于制造MEMS器件的方法。该方法包括以下步骤：a）提供具有位于其上的凹面的第一基底，b）提供具有分别位于其上的连接区域和致动区域的第二基底，c）在致动区域中形成多个微结构，d）在所述连接区域和所述致动区域中的元件，e）在所述导电元件上形成绝缘层，以及f）将所述第一基板连接到所述连接区域以形成所述MEMS器件。凹面包含多个微结构。

6. 发明申请

US20120111096A1 INTEGRATION MANUFACTURING PROCESS FOR MEMS DEVICE 失效
标题翻译： MEMS器件的集成制造工艺
公开(公告)号：US20120111096A1
公开(公告)日：2012-05-10
申请号：US13343643
申请日：2012-01-04
申请人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
发明人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
IPC分类号： G01M3/34
CPC分类号： B81C1/00301 , B81B2201/042 , B81B2207/097
摘要： A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.
摘要翻译：提供了一种用于制造MEMS器件的方法。该方法包括以下步骤：a）提供具有位于其上的凹面的第一基底，b）提供具有分别位于其上的连接区域和致动区域的第二基底，c）在致动区域中形成多个微结构，d）在所述连接区域和所述致动区域中的元件，e）在所述导电元件上形成绝缘层，以及f）将所述第一基板连接到所述连接区域以形成所述MEMS器件。凹面包含多个微结构。

7. 发明申请

US20090075406A1 INTEGRATION MANUFACTURING PROCESS FOR MEMS DEVICE 有权
标题翻译： MEMS器件的集成制造工艺
公开(公告)号：US20090075406A1
公开(公告)日：2009-03-19
申请号：US12326355
申请日：2008-12-02
申请人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
发明人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
IPC分类号： H01L21/66
CPC分类号： B81C1/00301 , B81B2201/042 , B81B2207/097
摘要： A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.
摘要翻译：提供了一种用于制造MEMS器件的方法。该方法包括以下步骤：a）提供具有位于其上的凹面的第一基底，b）提供具有分别位于其上的连接区域和致动区域的第二基底，c）在致动区域中形成多个微结构，d）在所述连接区域和所述致动区域中的元件，e）在所述导电元件上形成绝缘层，以及f）将所述第一基板连接到所述连接区域以形成所述MEMS器件。凹面包含多个微结构。

8. 发明授权

US07196449B2 Two-axis device and manufacturing method therefor 失效
标题翻译：双轴装置及其制造方法
公开(公告)号：US07196449B2
公开(公告)日：2007-03-27
申请号：US10951529
申请日：2004-09-28
申请人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
发明人： Mingching Wu , Hsueh-An Yang , Hung-Yi Lin , Weileun Fang
IPC分类号： H02N1/00 , C23F1/00
CPC分类号： G02B26/0841 , C23F4/00 , H02N1/006
摘要： A two-axis device is provided. The two-axis device includes a first substrate having a plurality of electrodes, a first connecting layer located on the first substrate, an actuating layer, a second connecting layer and a cover. The actuating layer is connected to the first substrate via the first connecting layer and includes a circular portion, an actuating portion, a first shaft and a second shaft. The second connecting layer is connected to the actuating layer and the cover is connected to the actuating layer via the second connecting layer. In addition, a vacuum concavity is formed by the first substrate, the first connecting layer, the actuating layer, the second connecting layer and the cover. The actuating portion and the first shaft are located in the vacuum concavity, and the second shaft extends outside of the vacuum concavity.
摘要翻译：提供了两轴设备。双轴装置包括具有多个电极的第一基板，位于第一基板上的第一连接层，致动层，第二连接层和盖。所述致动层经由所述第一连接层连接到所述第一基板，并且包括圆形部分，致动部分，第一轴和第二轴。第二连接层连接到致动层，并且盖通过第二连接层连接到致动层。此外，由第一基板，第一连接层，致动层，第二连接层和盖形成真空凹部。致动部和第一轴位于真空凹部中，第二轴延伸到真空凹部的外侧。

9. 发明申请

US20050205514A1 Optical microelectromechanical component and fabrication method thereof 审中-公开
标题翻译：光学微机电元件及其制造方法
公开(公告)号：US20050205514A1
公开(公告)日：2005-09-22
申请号：US10933630
申请日：2004-09-03
申请人： Mingching Wu , Hung-Yi Lin , Weileun Fang
发明人： Mingching Wu , Hung-Yi Lin , Weileun Fang
IPC分类号： B44C1/22 , C23F1/00 , G02B26/08
CPC分类号： G02B26/0841
摘要： The optical microelectromechanical components and the fabrication method thereof are provided. The method for fabricating an optical microelectromechanical component includes steps of (a) providing a substrate; (b) depositing an oxide layer on the substrate as a first mask; (c) performing a plurality of first etchings on the substrate to form a plurality of trenches with a plurality of depths; (d) depositing a first polysilicon layer on the trenches to form refilled trenches.
摘要翻译：提供了光学微机电部件及其制造方法。制造光学微机电元件的方法包括以下步骤：（a）提供衬底; （b）在衬底上沉积氧化物层作为第一掩模; （c）在所述衬底上执行多个第一蚀刻以形成具有多个深度的多个沟槽; （d）在沟槽上沉积第一多晶硅层以形成再填充的沟槽。

10. 发明申请

US20090311819A1 Method for Making Micro-Electromechanical System Devices 有权
标题翻译：制造微机电系统装置的方法
公开(公告)号：US20090311819A1
公开(公告)日：2009-12-17
申请号：US12244258
申请日：2008-10-02
申请人： Tso-Chi Chang , Mingching Wu
发明人： Tso-Chi Chang , Mingching Wu
IPC分类号： H01L21/50
CPC分类号： B81C1/00333 , B81B2203/0118 , B81C1/0015 , B81C2203/0136 , H01L2224/16225 , H01L2224/48091 , H01L2924/16195 , H01L2924/00014
摘要： A method for making micro-electromechanical system devices includes: (a) forming a sacrificial layer on a device wafer; (b) forming a plurality of loop-shaped through-holes in the sacrificial layer so as to form the sacrificial layer into a plurality of enclosed portions; (c) forming a plurality of cover caps on the sacrificial layer such that the cover caps respectively enclose the enclosed portions of the sacrificial layer; (d) forming a device through-hole in each of active units of the device wafer so as to form an active part suspended in each of the active units; and (e) removing the enclosed portions of the sacrificial layer through the device through-holes in the active units of the device wafer.
摘要翻译：一种用于制造微机电系统装置的方法包括：（a）在器件晶片上形成牺牲层; （b）在所述牺牲层中形成多个环形通孔，以将所述牺牲层形成为多个封闭部分; （c）在所述牺牲层上形成多个盖帽，使得所述盖帽分别围绕所述牺牲层的封闭部分; （d）在器件晶片的每个有源单元中形成器件通孔，以形成悬挂在每个有源单元中的有源部分; 和（e）通过器件晶片的有源单元中的器件通孔去除牺牲层的封闭部分。

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