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    • 10. 发明授权
    • Multilayer magnetoresistive sensor
    • 多层磁阻传感器
    • US5452163A
    • 1995-09-19
    • US173590
    • 1993-12-23
    • Kevin R. CoffeyRobert E. FontanaJames K. HowardTodd L. HyltonMichael A. ParkerChing H. Tsang
    • Kevin R. CoffeyRobert E. FontanaJames K. HowardTodd L. HyltonMichael A. ParkerChing H. Tsang
    • G01R33/09G11B5/39H01L43/10
    • B82Y25/00B82Y10/00G01R33/093G11B5/3903H01L43/10G11B2005/3996
    • A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
    • 磁阻读取传感器包括由平面阵列中的一个或多个磁阻元件形成的多层感测元件,每个磁阻元件具有由非磁性层隔开的至少两个铁磁层的多层结构。 铁磁层通过在铁磁层的相对边缘处的静磁耦合而反铁磁耦合。 通过间隔层与磁阻感测元件分离的偏置层提供磁场以将磁阻感测元件偏置在期望的非信号点以进行线性响应。 磁阻感测元件通过在衬底上交替地沉积铁磁材料层和非磁性材料层而形成,然后使用光刻技术对所得结构进行构图以提供磁阻元件的平面阵列。 导电层沉积在填充在分离磁阻元件的空间中的阵列上,以提供结构平面中的元件之间的导电性。