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1. 发明申请

US20080151613A1 PROGRAMMING METHOD FOR PHASE CHANGE MEMORY 有权
标题翻译：相位变化记忆的编程方法
公开(公告)号：US20080151613A1
公开(公告)日：2008-06-26
申请号：US11959108
申请日：2007-12-18
申请人： Te-Sheng Chao , Ming-Jung Chen , Philip H. Yeh , Ming-Jinn Tsai
发明人： Te-Sheng Chao , Ming-Jung Chen , Philip H. Yeh , Ming-Jinn Tsai
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2013/0078 , G11C2013/0092
摘要： A programming method for a phase change memory based on the phase transformations between amorphous and crystalline phases is disclosed. The programming method comprises a current pulse with step waveform providing a first crystallization current pulse to the phase change memory and providing a second crystallization current pulse to the phase change memory. The first crystallization current pulse has a first rising edge, a first falling edge and a first peak current held for a first hold time. The second crystallization current pulse has a second peak current. The second peak current follows the first falling edge and is held for a second hold time.
摘要翻译：公开了一种基于非晶相和晶相之间的相变的相变存储器的编程方法。编程方法包括具有阶跃波形的电流脉冲，其向相变存储器提供第一结晶电流脉冲，并向相变存储器提供第二结晶电流脉冲。第一结晶电流脉冲具有保持第一保持时间的第一上升沿，第一下降沿和第一峰值电流。第二结晶电流脉冲具有第二峰值电流。第二峰值电流遵循第一下降沿并保持第二保持时间。

2. 发明授权

US07773409B2 Writing method and system for a phase change memory 有权
标题翻译：相变存储器的写入方法和系统
公开(公告)号：US07773409B2
公开(公告)日：2010-08-10
申请号：US12000407
申请日：2007-12-12
申请人： Ming-Jung Chen , Te-Sheng Chao , Philip H. Yeh
发明人： Ming-Jung Chen , Te-Sheng Chao , Philip H. Yeh
IPC分类号： G11C11/00
CPC分类号： G11C7/04 , G11C13/0004 , G11C13/0069 , G11C2013/0078
摘要： A writing method for a phase change memory is disclosed. The writing method inputs a first writing pulse signal to a phase change memory to heat the phase change memory to above a first temperature and inputting a second writing pulse signal to the phase change memory to keep the phase change memory at a second temperature.
摘要翻译：公开了一种用于相变存储器的写入方法。写入方法将第一写入脉冲信号输入到相变存储器，以将相变存储器加热到高于第一温度，并将第二写入脉冲信号输入到相变存储器，以将相变存储器保持在第二温度。

3. 发明申请

US20080219046A1 Writing method and system for a phase change memory 有权
标题翻译：相变存储器的写入方法和系统
公开(公告)号：US20080219046A1
公开(公告)日：2008-09-11
申请号：US12000407
申请日：2007-12-12
申请人： Ming-Jung Chen , Te-Sheng Chao , Philip H. Yeh
发明人： Ming-Jung Chen , Te-Sheng Chao , Philip H. Yeh
IPC分类号： G11C11/00 , G11C7/04
CPC分类号： G11C7/04 , G11C13/0004 , G11C13/0069 , G11C2013/0078
摘要： A writing method for a phase change memory is disclosed. The writing method inputs a first writing pulse signal to a phase change memory to heat the phase change memory to above a first temperature and inputting a second writing pulse signal to the phase change memory to keep the phase change memory at a second temperature.
摘要翻译：公开了一种用于相变存储器的写入方法。写入方法将第一写入脉冲信号输入到相变存储器，以将相变存储器加热到高于第一温度，并将第二写入脉冲信号输入到相变存储器，以将相变存储器保持在第二温度。

4. 发明授权

US07660147B2 Programming method for phase change memory 有权
标题翻译：相变存储器的编程方法
公开(公告)号：US07660147B2
公开(公告)日：2010-02-09
申请号：US11959108
申请日：2007-12-18
申请人： Te-Sheng Chao , Ming-Jung Chen , Philip H. Yeh , Ming-Jinn Tsai
发明人： Te-Sheng Chao , Ming-Jung Chen , Philip H. Yeh , Ming-Jinn Tsai
IPC分类号： G11C7/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2013/0078 , G11C2013/0092
摘要： A programming method for a phase change memory based on the phase transformations between amorphous and crystalline phases is disclosed. The programming method comprises a current pulse with step waveform providing a first crystallization current pulse to the phase change memory and providing a second crystallization current pulse to the phase change memory. The first crystallization current pulse has a first rising edge, a first falling edge and a first peak current held for a first hold time. The second crystallization current pulse has a second peak current. The second peak current follows the first falling edge and is held for a second hold time.
摘要翻译：公开了一种基于非晶相和晶相之间的相变的相变存储器的编程方法。编程方法包括具有阶跃波形的电流脉冲，其向相变存储器提供第一结晶电流脉冲，并向相变存储器提供第二结晶电流脉冲。第一结晶电流脉冲具有保持第一保持时间的第一上升沿，第一下降沿和第一峰值电流。第二结晶电流脉冲具有第二峰值电流。第二峰值电流遵循第一下降沿并保持第二保持时间。

5. 发明授权

US07835177B2 Phase change memory cell and method of fabricating 有权
标题翻译：相变存储单元及其制造方法
公开(公告)号：US07835177B2
公开(公告)日：2010-11-16
申请号：US11493595
申请日：2006-07-27
申请人： Hong-Hui Hsu , Chien-Min Lee , Wen-Han Wang , Min-Hung Lee , Te-Sheng Chao , Yen Chuo , Yi-Chan Chen , Wei-Su Chen
发明人： Hong-Hui Hsu , Chien-Min Lee , Wen-Han Wang , Min-Hung Lee , Te-Sheng Chao , Yen Chuo , Yi-Chan Chen , Wei-Su Chen
IPC分类号： G11C11/00
CPC分类号： H01L45/1675 , G11C2213/52 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： A phase change memory (PCM) cell fabricated by etching a tapered structure into a phase change layer, and planarizing a dielectric layer on the phase change layer until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced, thereby lowering the operation current.
摘要翻译：通过将锥形结构蚀刻成相变层而制造的相变存储器（PCM）单元，并且平坦化相变层上的电介质层直到锥形结构的尖端暴露以接触加热电极。因此，相变层的露出端的面积被控制为极小的尺寸，相变层和加热电极之间的接触面积减小，从而降低了工作电流。

6. 发明申请

US20070148862A1 Phase-change memory layer and method of manufacturing the same and phase-change memory cell 审中-公开
标题翻译：相变存储层及其制造方法和相变存储单元
公开(公告)号：US20070148862A1
公开(公告)日：2007-06-28
申请号：US11437661
申请日：2006-05-22
申请人： Yi-Chan Chen , Hong-Hui Hsu , Chien-Min Lee , Yen Chuo , Te-Sheng Chao , Wen-Han Wang , Wei-Su Chen , Min-Hung Lee
发明人： Yi-Chan Chen , Hong-Hui Hsu , Chien-Min Lee , Yen Chuo , Te-Sheng Chao , Wen-Han Wang , Wei-Su Chen , Min-Hung Lee
IPC分类号： H01L21/336
CPC分类号： H01L45/165 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1641
摘要： A phase-change memory layer and method for manufacturing the same and a phase-change memory cell are provided. The phase-change memory layer is crystallized by adding one or more heterogeneous crystals that do not react with phase-change materials as the crystal nucleus, so as to reduce the time for transforming to the crystalline state from the amorphous state.
摘要翻译：提供了一种相变存储器层及其制造方法和相变存储单元。通过加入与相变材料不反应的一种或多种非晶体晶体作为晶核，相变记忆层结晶，从而减少从非晶态转变为结晶态的时间。

7. 发明申请

US20090065758A1 PHASE CHANGE MEMORY ARRAY AND FABRICATION THEREOF 有权
标题翻译：相变记忆阵列及其制作
公开(公告)号：US20090065758A1
公开(公告)日：2009-03-12
申请号：US12020494
申请日：2008-01-25
申请人： Te-Sheng Chao
发明人： Te-Sheng Chao
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L45/144 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/1675 , Y10S438/90
摘要： A phase change memory array is disclosed, comprising a first cell having a patterned phase change layer, and a second cell having a patterned phase change layer, wherein the patterned phase change layer of the first cell and the patterned phase change layer of the second cell are disposed at different layers.
摘要翻译：公开了一种相变存储器阵列，其包括具有图案化相变层的第一单元和具有图案化相变层的第二单元，其中第一单元的图案化相变层和第二单元的图案化相变层被布置在不同的层。

8. 发明申请

US20070278538A1 PHASE CHANGE MEMORY CELL 有权
标题翻译：相变存储器单元
公开(公告)号：US20070278538A1
公开(公告)日：2007-12-06
申请号：US11553432
申请日：2006-10-26
申请人： Te-Sheng Chao
发明人： Te-Sheng Chao
IPC分类号： H01L29/768
CPC分类号： G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0078 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , Y10S257/903
摘要： A phase change memory cell is disclosed, including a first electrode and a second electrode, and a plurality of recording layers disposed between the first and second electrodes. The phase of an active region of each of the recording layers can be changed to a crystalline state or an amorphous state by current pulse control and hence respectively has crystalline resistance or amorphous resistance. At least two of the recording layers have different dimensions such that different combinations of the crystalline and amorphous resistance result in at least three different effective resistance values between the first and second electrodes. The phase change memory cell can be realized with the same material of the recording layers and thus can be fabricated with simple and currently developed CMOS fabrication process technologies. Furthermore, the phase change memory is easy to control due to large current programming intervals.
摘要翻译：公开了一种相变存储单元，包括第一电极和第二电极，以及设置在第一和第二电极之间的多个记录层。每个记录层的有源区的相位可以通过电流脉冲控制而变为结晶状态或非晶状态，因此分别具有结晶电阻或无定形电阻。至少两个记录层具有不同的尺寸，使得晶体和非晶体电阻的不同组合在第一和第二电极之间产生至少三个不同的有效电阻值。相变存储单元可以用相同的记录层材料实现，因此可以用简单且目前开发的CMOS制造工艺技术来制造。此外，由于大的电流编程间隔，相变存储器易于控制。

9. 发明授权

US08045367B2 Phase change memory 有权
标题翻译：相变记忆
公开(公告)号：US08045367B2
公开(公告)日：2011-10-25
申请号：US12188293
申请日：2008-08-08
申请人： Te-Sheng Chao
发明人： Te-Sheng Chao
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C13/0004 , G11C2013/0054 , Y10S977/754
摘要： A phase change memory with a primary memory array, a reference memory array, and a comparison circuit is provided. The electrical characteristic curve of the recording layers of the primary memory units is different from the electrical characteristic curve of the recording layers of the reference memory units. The primary memory array includes at least one primary memory unit to generate at least one sensing signal, wherein each of the primary memory units includes at least one recording layer can be programmed to a first resistance and a second resistance. The reference memory array includes at least one reference memory unit to generate at least one reference signal, wherein each of the reference memory units includes at least one recording layer can be programmed to change its resistance. The comparison circuit compares the sensing signal and the reference signal to generate a comparison result.
摘要翻译：提供了具有主存储器阵列，参考存储器阵列和比较电路的相变存储器。主存储单元的记录层的电特性曲线与参考存储单元的记录层的电特性曲线不同。主存储器阵列包括至少一个主存储器单元以产生至少一个感测信号，其中每个主存储器单元包括至少一个记录层可被编程为第一电阻和第二电阻。参考存储器阵列包括至少一个参考存储器单元以产生至少一个参考信号，其中每个参考存储器单元包括至少一个记录层可被编程以改变其电阻。比较电路比较感测信号和参考信号以产生比较结果。

10. 发明授权

US07679075B2 Phase change memory array and fabrication thereof 有权
标题翻译：相变存储器阵列及其制造
公开(公告)号：US07679075B2
公开(公告)日：2010-03-16
申请号：US12020494
申请日：2008-01-25
申请人： Te-Sheng Chao
发明人： Te-Sheng Chao
IPC分类号： H01L47/00
CPC分类号： H01L45/144 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/1675 , Y10S438/90
摘要： A phase change memory array is disclosed, comprising a first cell having a patterned phase change layer, and a second cell having a patterned phase change layer, wherein the patterned phase change layer of the first cell and the patterned phase change layer of the second cell are disposed at different layers.
摘要翻译：公开了一种相变存储器阵列，其包括具有图案化相变层的第一单元和具有图案化相变层的第二单元，其中第一单元的图案化相变层和第二单元的图案化相变层被布置在不同的层。

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