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1. 发明授权

US07883917B2 Semiconductor device with bonding pad 有权
标题翻译：具有焊盘的半导体器件
公开(公告)号：US07883917B2
公开(公告)日：2011-02-08
申请号：US12354171
申请日：2009-01-15
申请人： Ming-Chyi Liu , Yuan-Hung Liu , Gwo-Yuh Shiau , Yuan-Chih Hsieh , Chi-Hsin Lo , Chia-Shiung Tsai
发明人： Ming-Chyi Liu , Yuan-Hung Liu , Gwo-Yuh Shiau , Yuan-Chih Hsieh , Chi-Hsin Lo , Chia-Shiung Tsai
IPC分类号： H01L21/00
CPC分类号： H01L24/05 , H01L24/45 , H01L24/48 , H01L27/14636 , H01L27/14643 , H01L2224/02166 , H01L2224/04042 , H01L2224/05093 , H01L2224/05096 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45166 , H01L2224/4807 , H01L2224/4845 , H01L2224/48463 , H01L2224/48505 , H01L2224/48624 , H01L2224/48824 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01072 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2224/05666 , H01L2224/45124 , H01L2224/05655 , H01L2924/00
摘要： A method for forming a semiconductor device with a bonding pad is disclosed. A first substrate having a device area and a bonding area is provided, wherein the first substrate has an upper surface and a bottom surface. Semiconductor elements are formed on the upper surface of the first substrate in the device area. A first inter-metal dielectric layer is formed on the upper surface of the substrate in the bonding area. A lowermost metal pattern is formed in the first inter-metal dielectric layer, wherein the lowermost metal pattern serves as the bonding pad. An opening through the first substrate is formed to expose the lowermost metal pattern.
摘要翻译：公开了一种用焊盘形成半导体器件的方法。提供具有器件面积和接合面积的第一衬底，其中第一衬底具有上表面和底表面。半导体元件形成在器件区域中的第一衬底的上表面上。在接合区域中的基板的上表面上形成第一金属间介电层。在第一金属间介质层中形成最下面的金属图案，其中最下面的金属图形用作接合焊盘。形成通过第一基板的开口以露出最下面的金属图案。

2. 发明申请

US20080246152A1 SEMICONDUCTOR DEVICE WITH BONDING PAD 审中-公开
标题翻译：具有粘接垫的半导体器件
公开(公告)号：US20080246152A1
公开(公告)日：2008-10-09
申请号：US11696296
申请日：2007-04-04
申请人： Ming-Chyi Liu , Yuan-Hung Liu , Gwo-Yuh Shiau , Yuan-Chih Hsieh , Chi-Hsin Lo , Chia-Shiung Tsai
发明人： Ming-Chyi Liu , Yuan-Hung Liu , Gwo-Yuh Shiau , Yuan-Chih Hsieh , Chi-Hsin Lo , Chia-Shiung Tsai
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/05 , H01L24/45 , H01L24/48 , H01L27/14636 , H01L27/14643 , H01L2224/02166 , H01L2224/04042 , H01L2224/05093 , H01L2224/05096 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45166 , H01L2224/4807 , H01L2224/4845 , H01L2224/48463 , H01L2224/48505 , H01L2224/48624 , H01L2224/48824 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01072 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2224/05666 , H01L2224/45124 , H01L2224/05655 , H01L2924/00
摘要： A semiconductor device with a bonding pad is provided. The semiconductor device includes a first substrate having a device area and a bonding area, wherein the first substrate has an upper surface and a bottom surface. Semiconductor elements are disposed on the upper surface of the first substrate in the device area. A first inter-metal dielectric layer is disposed on the upper surface of the substrate in the bonding area. A lowermost metal pattern is disposed in the first inter-metal dielectric layer, wherein the lowermost metal pattern serves as the bonding pad, and the first substrate is exposed through an opening in the lowermost metal pattern.
摘要翻译：提供具有接合焊盘的半导体器件。半导体器件包括具有器件面积和接合面积的第一衬底，其中第一衬底具有上表面和底表面。半导体元件设置在器件区域中的第一衬底的上表面上。在接合区域中的第一金属间介电层设置在基板的上表面上。最下面的金属图案设置在第一金属间介质层中，其中最下面的金属图形用作接合焊盘，第一基板通过最下面的金属图案中的开口露出。

3. 发明申请

US20090124073A1 SEMICONDUCTOR DEVICE WITH BONDING PAD 有权
标题翻译：具有粘接垫的半导体器件
公开(公告)号：US20090124073A1
公开(公告)日：2009-05-14
申请号：US12354171
申请日：2009-01-15
申请人： Ming-Chyi Liu , Yuan-Hung Liu , Gwo-Yuh Shiau , Yuan-Chih Hsieh , Chi-Hsin Lo , Chia-Shiung Tsai
发明人： Ming-Chyi Liu , Yuan-Hung Liu , Gwo-Yuh Shiau , Yuan-Chih Hsieh , Chi-Hsin Lo , Chia-Shiung Tsai
IPC分类号： H01L21/768
CPC分类号： H01L24/05 , H01L24/45 , H01L24/48 , H01L27/14636 , H01L27/14643 , H01L2224/02166 , H01L2224/04042 , H01L2224/05093 , H01L2224/05096 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45166 , H01L2224/4807 , H01L2224/4845 , H01L2224/48463 , H01L2224/48505 , H01L2224/48624 , H01L2224/48824 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01072 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2224/05666 , H01L2224/45124 , H01L2224/05655 , H01L2924/00
摘要： A method for forming a semiconductor device with a bonding pad is disclosed. A first substrate having a device area and a bonding area is provided, wherein the first substrate has an upper surface and a bottom surface. Semiconductor elements are formed on the upper surface of the first substrate in the device area. A first inter-metal dielectric layer is formed on the upper surface of the substrate in the bonding area. A lowermost metal pattern is formed in the first inter-metal dielectric layer, wherein the lowermost metal pattern serves as the bonding pad. An opening through the first substrate is formed to expose the lowermost metal pattern.
摘要翻译：公开了一种用焊盘形成半导体器件的方法。提供具有器件面积和接合面积的第一衬底，其中第一衬底具有上表面和底表面。半导体元件形成在器件区域中的第一衬底的上表面上。在接合区域中的基板的上表面上形成第一金属间介电层。在第一金属间介质层中形成最下面的金属图案，其中最下面的金属图形用作接合焊盘。形成通过第一基板的开口以露出最下面的金属图案。

4. 发明申请

US20050274968A1 Lens structures suitable for use in image sensors and method for making the same 有权
标题翻译：适用于图像传感器的镜头结构及其制作方法
公开(公告)号：US20050274968A1
公开(公告)日：2005-12-15
申请号：US10982978
申请日：2004-11-05
申请人： Ching-Sen Kuo , Feng-Jia Shiu , Gwo-Yuh Shiau , Jieh-Jang Chen , Shih-Chi Fu , Chien Tseng , Chia-Shiung Tsai , Yuan-Hung Liu , Yeur-Luen Tu , Chih-Ta Wu , Chi-Hsin Lo
发明人： Ching-Sen Kuo , Feng-Jia Shiu , Gwo-Yuh Shiau , Jieh-Jang Chen , Shih-Chi Fu , Chien Tseng , Chia-Shiung Tsai , Yuan-Hung Liu , Yeur-Luen Tu , Chih-Ta Wu , Chi-Hsin Lo
IPC分类号： H01L21/00 , H01L27/146 , H01L29/04 , H01L29/06 , H01L29/10 , H01L29/22 , H01L29/227 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L33/00 , H01L47/02
CPC分类号： H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： An image sensor includes a double-microlens structure with an outer microlens aligned over an inner microlens, both microlenses aligned over a corresponding photosensor. The inner or outer microlens may be formed by a silylation process in which a reactive portion of a photoresist material reacts with a silicon-containing agent. The inner or outer microlens may be formed by step etching of a dielectric material, the step etching process including a series of alternating etch steps including an anisotropic etching step and an etching step that causes patterned photoresist to laterally recede. Subsequent isotropic etching processes may be used to smooth the etched step structure and form a smooth lens. A thermally stable and photosensitive polymeric/organic material may also be used to form permanent inner or outer lenses. The photosensitive material is coated then patterned using photolithography, reflowed, then cured to form a permanent lens structure.
摘要翻译：图像传感器包括双微透镜结构，其外部微透镜在内部微透镜上对准，两个微透镜在相应的光电传感器上对准。内部或外部微透镜可以通过甲硅烷基化方法形成，其中光致抗蚀剂材料的反应性部分与含硅试剂反应。内部或外部微透镜可以通过介电材料的步骤蚀刻形成，该步骤蚀刻工艺包括一系列交替蚀刻步骤，其包括各向异性蚀刻步骤和使图案化光致抗蚀剂横向后退的蚀刻步骤。可以使用随后的各向同性蚀刻工艺来平滑蚀刻的台阶结构并形成光滑的透镜。热稳定和感光的聚合物/有机材料也可用于形成永久的内镜片或外镜片。感光材料被涂覆，然后使用光刻图案化，回流，然后固化以形成永久性透镜结构。

5. 发明授权

US07443005B2 Lens structures suitable for use in image sensors and method for making the same 有权
标题翻译：适用于图像传感器的镜头结构及其制作方法
公开(公告)号：US07443005B2
公开(公告)日：2008-10-28
申请号：US10982978
申请日：2004-11-05
申请人： Ching-Sen Kuo , Feng-Jia Shiu , Gwo-Yuh Shiau , Jieh-Jang Chen , Shih-Chi Fu , Chien Hsien Tseng , Chia-Shiung Tsai , Yuan-Hung Liu , Yeur-Luen Tu , Chih-Ta Wu , Chi-Hsin Lo
发明人： Ching-Sen Kuo , Feng-Jia Shiu , Gwo-Yuh Shiau , Jieh-Jang Chen , Shih-Chi Fu , Chien Hsien Tseng , Chia-Shiung Tsai , Yuan-Hung Liu , Yeur-Luen Tu , Chih-Ta Wu , Chi-Hsin Lo
IPC分类号： H01L29/78
CPC分类号： H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： An image sensor includes a double-microlens structure with an outer microlens aligned over an inner microlens, both microlenses aligned over a corresponding photosensor. The inner or outer microlens may be formed by a silylation process in which a reactive portion of a photoresist material reacts with a silicon-containing agent. The inner or outer microlens may be formed by step etching of a dielectric material, the step etching process including a series of alternating etch steps including an anisotropic etching step and an etching step that causes patterned photoresist to laterally recede. Subsequent isotropic etching processes may be used to smooth the etched step structure and form a smooth lens. A thermally stable and photosensitive polymeric/organic material may also be used to form permanent inner or outer lenses. The photosensitive material is coated then patterned using photolithography, reflowed, then cured to form a permanent lens structure.
摘要翻译：图像传感器包括双微透镜结构，其外部微透镜在内部微透镜上对准，两个微透镜在相应的光电传感器上对准。内部或外部微透镜可以通过甲硅烷基化方法形成，其中光致抗蚀剂材料的反应性部分与含硅试剂反应。内部或外部微透镜可以通过介电材料的步骤蚀刻形成，该步骤蚀刻工艺包括一系列交替蚀刻步骤，其包括各向异性蚀刻步骤和使图案化光致抗蚀剂横向后退的蚀刻步骤。可以使用随后的各向同性蚀刻工艺来平滑蚀刻的台阶结构并形成光滑的透镜。热稳定和感光的聚合物/有机材料也可用于形成永久的内镜片或外镜片。感光材料被涂覆，然后使用光刻图案化，回流，然后固化以形成永久性透镜结构。

6. 发明授权

US07824998B2 Method of forming a semiconductor capacitor using amorphous carbon 有权
标题翻译：使用无定形碳形成半导体电容器的方法
公开(公告)号：US07824998B2
公开(公告)日：2010-11-02
申请号：US12357661
申请日：2009-01-22
申请人： Yuan-Hung Liu , Ming Chyi Liu , Yeur-Luen Tu , Chi-Hsin Lo , Chia-Shiung Tsai
发明人： Yuan-Hung Liu , Ming Chyi Liu , Yeur-Luen Tu , Chi-Hsin Lo , Chia-Shiung Tsai
IPC分类号： H01L21/20
CPC分类号： H01L21/02274 , H01L21/02115 , H01L21/28273 , H01L21/3086 , H01L21/31116 , H01L21/31144 , H01L21/3146 , H01L21/76816 , H01L21/7682 , H01L21/76885 , H01L21/76897 , H01L27/115 , H01L27/11521 , H01L27/14632 , H01L27/14687 , H01L28/91 , H01L29/42328 , H01L29/7881
摘要： A method includes forming an amorphous carbon layer over a first dielectric layer formed over a substrate, forming a second dielectric layer over the amorphous carbon layer; and forming an opening within the amorphous carbon layer and second dielectric layer by a first etch process to partially expose a top surface of the first dielectric layer. A substantially conformal metal-containing layer is formed over the second dielectric layer and within the opening. The second dielectric layer and a portion of the metal-containing layer are removed. The amorphous carbon layer is removed by an oxygen-containing plasma process to expose a top surface of the first dielectric layer. An insulating layer is formed over the metal-containing layer, and a second metal-containing layer is formed over the insulating layer to form a capacitor.
摘要翻译：一种方法包括在形成在衬底上的第一电介质层上形成无定形碳层，在非晶碳层上形成第二电介质层; 以及通过第一蚀刻工艺在所述非晶碳层和所述第二介电层内形成开口，以部分地暴露所述第一介电层的顶表面。在第二电介质层上并在开口内形成基本上共形的含金属层。去除第二电介质层和一部分含金属层。通过含氧等离子体工艺除去无定形碳层以暴露第一介电层的顶表面。在含金属层的上方形成有绝缘层，在绝缘层上形成第二含金属层，形成电容器。

7. 发明申请

US20080124912A1 SEMICONDUCTOR METHODS 审中-公开
标题翻译：半导体方法
公开(公告)号：US20080124912A1
公开(公告)日：2008-05-29
申请号：US11461673
申请日：2006-08-01
申请人： Yuan-Hung Liu , Ming Chyi Liu , Yeur-Luen Tu , Chi-Hsin Lo , Chia-Shiung Tsai
发明人： Yuan-Hung Liu , Ming Chyi Liu , Yeur-Luen Tu , Chi-Hsin Lo , Chia-Shiung Tsai
IPC分类号： H01L21/4763
CPC分类号： H01L21/02274 , H01L21/02115 , H01L21/3086 , H01L21/31116 , H01L21/31144 , H01L21/3146 , H01L21/76816 , H01L21/7682 , H01L21/76885 , H01L21/76897 , H01L27/115 , H01L27/11521 , H01L27/14632 , H01L27/14687 , H01L28/91 , H01L29/40114 , H01L29/42328 , H01L29/7881
摘要： A method includes the steps of: (a) forming a conductive layer within a dielectric layer formed over a substrate; (b) forming a material layer over the conductive layer and the dielectric layer; (c) forming an opening within the material layer by an etch process to expose a portion of the dielectric layer and a top surface of the conductive layer; (d) forming a first metal-containing layer within the opening substantially covering sidewalls of the material layer and the exposed portion of the second dielectric layer; and (e) removing the material layer by an oxygen-containing plasma process to expose a portion of outer sidewalls of the first metal-containing layer.
摘要翻译：一种方法包括以下步骤：（a）在形成在衬底上的电介质层内形成导电层; （b）在导电层和电介质层上形成材料层; （c）通过蚀刻工艺在所述材料层内形成开口以暴露所述电介质层的一部分和所述导电层的顶表面; （d）在所述开口内形成基本上覆盖所述材料层的侧壁和所述第二介电层的暴露部分的第一含金属层; 和（e）通过含氧等离子体方法去除所述材料层以暴露所述第一含金属层的外侧壁的一部分。

8. 发明授权

US08889507B2 MIM capacitors with improved reliability 有权
标题翻译： MIM电容器具有更高的可靠性
公开(公告)号：US08889507B2
公开(公告)日：2014-11-18
申请号：US11765971
申请日：2007-06-20
申请人： Chih-Ta Wu , Jason Lee , Chung Chien Wang , Hsing-Lien Lin , Yu-Jen Wang , Yeur-Luen Tu , Chern-Yow Hsu , Yuan-Hung Liu , Chi-Hsin Lo , Chia-Shiung Tsai , Lucy Chang , Chia-Lin Chen , Ming-Chih Tsai
发明人： Chih-Ta Wu , Jason Lee , Chung Chien Wang , Hsing-Lien Lin , Yu-Jen Wang , Yeur-Luen Tu , Chern-Yow Hsu , Yuan-Hung Liu , Chi-Hsin Lo , Chia-Shiung Tsai , Lucy Chang , Chia-Lin Chen , Ming-Chih Tsai
IPC分类号： H01L21/8234 , H01L21/8244 , H01L49/02 , H01L27/108
CPC分类号： H01L27/10814 , H01L27/10852 , H01L28/40 , H01L28/75
摘要： A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.
摘要翻译：提供电容器及其形成方法。该方法包括形成底部电极; 在含氧环境中处理底部电极以将底部电极的顶层转化为缓冲层; 在缓冲层上形成绝缘层; 并在所述绝缘层上形成顶部电极。

9. 发明申请

US20070023816A1 EEPROM flash memory device with jagged edge floating gate 有权
标题翻译：具有锯齿状边缘浮动栅极的EEPROM闪存器件
公开(公告)号：US20070023816A1
公开(公告)日：2007-02-01
申请号：US11191437
申请日：2005-07-27
申请人： Yuan-Hung Liu , Shih-Chi Fu , Chi-Hsin Lo , Chia-Shiung Tsai
发明人： Yuan-Hung Liu , Shih-Chi Fu , Chi-Hsin Lo , Chia-Shiung Tsai
IPC分类号： H01L29/788
CPC分类号： H01L29/42324 , H01L27/115 , H01L27/11521 , H01L29/7881
摘要： An EEPROM flash memory device having a floating gate electrode enabling a reduced erase voltage and method for forming the same, the floating gate electrode including an outer edge portion comprising multiple charge transfer pointed tips.
摘要翻译：一种具有能够实现降低的擦除电压的浮动栅电极的EEPROM闪存器件及其形成方法，该浮栅电极包括包含多个电荷转移尖端的外边缘部分。

10. 发明授权

US06869837B1 Methods of fabricating a word-line spacer for wide over-etching window on outside diameter (OD) and strong fence 失效
标题翻译：在外径（OD）和强栅栏上制作用于宽过度蚀刻窗口的字线间隔件的方法
公开(公告)号：US06869837B1
公开(公告)日：2005-03-22
申请号：US10758316
申请日：2004-01-15
申请人： Yuan-Hung Liu , Yeur-Luen Tu , Chin-Ta Wu , Tsung-Hsun Huang , Hsiu Ouyang , Chi-Hsin Lo , Chia-Shiung Tsai
发明人： Yuan-Hung Liu , Yeur-Luen Tu , Chin-Ta Wu , Tsung-Hsun Huang , Hsiu Ouyang , Chi-Hsin Lo , Chia-Shiung Tsai
IPC分类号： H01L21/8238 , H01L21/8247 , H01L27/115 , H01L29/76
CPC分类号： H01L27/11521 , H01L27/115
摘要： A method of fabricating word-line spacers comprising the following steps. A substrate having an inchoate split-gate flash memory structure formed thereover is provided. A conductive layer is formed over the substrate and the inchoate split-gate flash memory structure. The conductive layer having: a upper portion and lower vertical portions over the inchoate split-gate flash memory structure; and lower horizontal portions over the substrate. A dual-thickness oxide layer is formed over the conductive layer and has a greater thickness over the upper portion of the conductive layer. The oxide layer is partially etched back to remove at least the oxide layer from over the lower horizontal portions of the conductive layer to expose the underlying portions of the conductive layer. Then etching: away the exposed portions of the conductive layer over the substrate; and through at least a portion of the thinned oxide layer and into the exposed underlying portion of the conductive layer to expose a portion of the inchoate split-gate flash memory structure and to form the word-line spacers adjacent the inchoate split-gate flash memory structure.
摘要翻译：一种制造字线间隔物的方法，包括以下步骤。提供了具有形成在其上的初始分离栅闪存结构的衬底。导电层形成在衬底和初生分裂栅极闪存结构之上。所述导电层具有：上部分裂栅极闪存结构上方的上部和下部垂直部分; 并且在基底上下方水平部分。在导电层之上形成双层氧化物层，并且在导电层的上部上具有更大的厚度。将氧化层部分地回蚀刻以从导电层的下部水平部分上方至少去除氧化物层，以暴露导电层的下面部分。然后蚀刻：将导电层的暴露部分远离衬底; 并且通过至少一部分减薄的氧化物层并进入导电层的暴露的下面的部分，以暴露初步分离栅闪存结构的一部分并且形成邻近先驱分离栅闪存的字线间隔物结构体。

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