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1. 发明申请

US20100200903A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20100200903A1
公开(公告)日：2010-08-12
申请号：US12767639
申请日：2010-04-26
申请人： Ming-Cheng Chang , Chih-Hsiung Hung , Mao-Ying Wang , Wei-Hui Hsu
发明人： Ming-Cheng Chang , Chih-Hsiung Hung , Mao-Ying Wang , Wei-Hui Hsu
IPC分类号： H01L29/788
CPC分类号： H01L29/66583 , H01L21/28273 , H01L29/512 , H01L29/7887
摘要： A nonvolatile memory device and method for fabricating the same are provided. The method for fabricating the nonvolatile memory device comprises providing a substrate. A tunnel insulating layer and a first conductive layer are formed in the substrate. A trench is formed through the first conductive layer and the tunnel insulating layer, wherein a portion of the substrate is exposed from the trench. A first insulating layer is formed in the trench. A second insulating layer is formed on sidewalls of the first insulating layer. A third insulating layer is conformably formed in the trench, covering the first insulating layer on a bottom portion of the trench and the second insulating layer on the sidewalls of the trench, wherein thickness of the third insulating layer on the sidewalls is thinner than that on the bottom of the trench. A control gate is formed on the third insulating layer in the trench.
摘要翻译：提供一种非易失性存储器件及其制造方法。非易失性存储器件的制造方法包括提供衬底。在衬底中形成隧道绝缘层和第一导电层。通过第一导电层和隧道绝缘层形成沟槽，其中衬底的一部分从沟槽露出。在沟槽中形成第一绝缘层。第二绝缘层形成在第一绝缘层的侧壁上。第三绝缘层顺应地形成在沟槽中，覆盖沟槽底部的第一绝缘层和沟槽侧壁上的第二绝缘层，其中侧壁上的第三绝缘层的厚度比在沟渠的底部。控制栅极形成在沟槽中的第三绝缘层上。

2. 发明授权

US08368134B2 Nonvolatile memory device and method for fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08368134B2
公开(公告)日：2013-02-05
申请号：US12767639
申请日：2010-04-26
申请人： Ming-Cheng Chang , Chih-Hsiung Hung , Mao-Ying Wang , Wei-Hui Hsu
发明人： Ming-Cheng Chang , Chih-Hsiung Hung , Mao-Ying Wang , Wei-Hui Hsu
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L29/66583 , H01L21/28273 , H01L29/512 , H01L29/7887
摘要： A nonvolatile memory device and method for fabricating the same are provided. The method for fabricating the nonvolatile memory device comprises providing a substrate. A tunnel insulating layer and a first conductive layer are formed in the substrate. A trench is formed through the first conductive layer and the tunnel insulating layer, wherein a portion of the substrate is exposed from the trench. A first insulating layer is formed in the trench. A second insulating layer is formed on sidewalls of the first insulating layer. A third insulating layer is conformably formed in the trench, covering the first insulating layer on a bottom portion of the trench and the second insulating layer on the sidewalls of the trench, wherein thickness of the third insulating layer on the sidewalls is thinner than that on the bottom of the trench. A control gate is formed on the third insulating layer in the trench.
摘要翻译：提供一种非易失性存储器件及其制造方法。非易失性存储器件的制造方法包括提供衬底。在衬底中形成隧道绝缘层和第一导电层。通过第一导电层和隧道绝缘层形成沟槽，其中衬底的一部分从沟槽露出。在沟槽中形成第一绝缘层。第二绝缘层形成在第一绝缘层的侧壁上。第三绝缘层顺应地形成在沟槽中，覆盖沟槽底部的第一绝缘层和沟槽侧壁上的第二绝缘层，其中侧壁上的第三绝缘层的厚度比在沟渠的底部。控制栅极形成在沟槽中的第三绝缘层上。

3. 发明授权

US07754614B2 Nonvolatile memory device and method for fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07754614B2
公开(公告)日：2010-07-13
申请号：US12016100
申请日：2008-01-17
申请人： Ming-Cheng Chang , Chih-Hsiung Hung , Mao-Ying Wang , Wei-Hui Hsu
发明人： Ming-Cheng Chang , Chih-Hsiung Hung , Mao-Ying Wang , Wei-Hui Hsu
IPC分类号： H01L21/311
CPC分类号： H01L29/66583 , H01L21/28273 , H01L29/512 , H01L29/7887
摘要： A nonvolatile memory device and method for fabricating the same are provided. The method for fabricating the nonvolatile memory device comprises providing a substrate. A tunnel insulating layer and a first conductive layer are formed in the substrate. A trench is formed through the first conductive layer and the tunnel insulating layer, wherein a portion of the substrate is exposed from the trench. A first insulating layer is formed in the trench. A second insulating layer is formed on sidewalls of the first insulating layer. A third insulating layer is conformably formed in the trench, covering the first insulating layer on a bottom portion of the trench and the second insulating layer on the sidewalls of the trench, wherein thickness of the third insulating layer on the sidewalls is thinner than that on the bottom of the trench. A control gate is formed on the third insulating layer in the trench.
摘要翻译：提供一种非易失性存储器件及其制造方法。非易失性存储器件的制造方法包括提供衬底。在衬底中形成隧道绝缘层和第一导电层。通过第一导电层和隧道绝缘层形成沟槽，其中衬底的一部分从沟槽露出。在沟槽中形成第一绝缘层。第二绝缘层形成在第一绝缘层的侧壁上。第三绝缘层顺应地形成在沟槽中，覆盖沟槽底部的第一绝缘层和沟槽侧壁上的第二绝缘层，其中侧壁上的第三绝缘层的厚度比在沟渠的底部。控制栅极形成在沟槽中的第三绝缘层上。

4. 发明申请

US20090061612A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20090061612A1
公开(公告)日：2009-03-05
申请号：US12016100
申请日：2008-01-17
申请人： Ming-Cheng Chang , Chih-Hsiung Hung , Mao-Ying Wang , Wei-Hui Hsu
发明人： Ming-Cheng Chang , Chih-Hsiung Hung , Mao-Ying Wang , Wei-Hui Hsu
IPC分类号： H01L21/3205
CPC分类号： H01L29/66583 , H01L21/28273 , H01L29/512 , H01L29/7887
摘要： A nonvolatile memory device and method for fabricating the same are provided. The method for fabricating the nonvolatile memory device comprises providing a substrate. A tunnel insulating layer and a first conductive layer are formed in the substrate. A trench is formed through the first conductive layer and the tunnel insulating layer, wherein a portion of the substrate is exposed from the trench. A first insulating layer is formed in the trench. A second insulating layer is formed on sidewalls of the first insulating layer. A third insulating layer is conformably formed in the trench, covering the first insulating layer on a bottom portion of the trench and the second insulating layer on the sidewalls of the trench, wherein thickness of the third insulating layer on the sidewalls is thinner than that on the bottom of the trench. A control gate is formed on the third insulating layer in the trench.
摘要翻译：提供一种非易失性存储器件及其制造方法。非易失性存储器件的制造方法包括提供衬底。在衬底中形成隧道绝缘层和第一导电层。通过第一导电层和隧道绝缘层形成沟槽，其中衬底的一部分从沟槽露出。在沟槽中形成第一绝缘层。第二绝缘层形成在第一绝缘层的侧壁上。第三绝缘层顺应地形成在沟槽中，覆盖沟槽底部的第一绝缘层和沟槽侧壁上的第二绝缘层，其中侧壁上的第三绝缘层的厚度比在沟渠的底部。控制栅极形成在沟槽中的第三绝缘层上。

5. 发明申请

US20130249047A1 THROUGH SILICON VIA STRUCTURE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：通过硅的结构和方法来制造它们
公开(公告)号：US20130249047A1
公开(公告)日：2013-09-26
申请号：US13429444
申请日：2012-03-26
申请人： Chih-Hsiung Hung , Yi-Jen Lo
发明人： Chih-Hsiung Hung , Yi-Jen Lo
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/76898
摘要： A through silicon via structure is provided, including a substrate, an isolation layer, a conductive layer and a dielectric layer. The substrate has a through-hole therein. The isolation layer is disposed on two sidewalls of the through-hole. The conductive layer is disposed in the through-hole and covers the isolation layer, and the conductive layer includes a first portion and a second portion, wherein the first portion fills a portion of the through-hole, and the second portion is located on the sidewalls in the other portion of the through-hole, such that the conductive layer has a concave part. The dielectric layer is disposed in the concave part and fills the concave part.
摘要翻译：提供了通过硅通孔结构，包括衬底，隔离层，导电层和电介质层。基板在其中具有通孔。隔离层设置在通孔的两个侧壁上。导电层设置在通孔中并覆盖隔离层，导电层包括第一部分和第二部分，其中第一部分填充通孔的一部分，第二部分位于第二部分在通孔的另一部分中的侧壁，使得导电层具有凹部。电介质层设置在凹部中并填充凹部。

6. 发明申请

US20070044591A1 Method for producing mesoporpus nanoscale iron-containing metal particles 审中-公开
标题翻译：生产中等含量的含铁金属微粒的方法
公开(公告)号：US20070044591A1
公开(公告)日：2007-03-01
申请号：US11406434
申请日：2006-04-19
申请人： Gordon Yang , Chih-Hsiung Hung , Der-Guang Chang
发明人： Gordon Yang , Chih-Hsiung Hung , Der-Guang Chang
IPC分类号： B22F9/24
CPC分类号： B22F9/24 , B22F1/0018 , B22F2999/00 , B82Y30/00 , B22F1/0007 , B22F3/11
摘要： A method for producing mesoporous nanoscale iron-containing metal particles includes the steps of: adding dropwise a reducing agent into an iron salt containing aqueous solution under a condition that the molar ratio of the reducing agent to the iron salt ranges from 6 to 10 times the stoichiometric ratio of the reducing agent to the iron salt to produce mesoporous nanoscale iron-containing metal particles; separating the mesoporous nanoscale iron-containing metal particles from the aqueous solution; and drying the mesoporous nanoscale iron-containing metal particles.
摘要翻译：一种生产中孔纳米级含铁金属颗粒的方法包括以下步骤：在还原剂与铁盐的摩尔比为6至10倍的条件下，将还原剂滴加到含铁盐水溶液中还原剂与铁盐的化学计量比，以产生介孔纳米级含铁金属颗粒; 从水溶液中分离介孔纳米级含铁金属颗粒; 并干燥介孔纳米级含铁金属颗粒。

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