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1. 发明授权

US06436841B1 Selectivity oxide-to-oxynitride etch process using a fluorine containing gas, an inert gas and a weak oxidant 有权
标题翻译：使用含氟气体，惰性气体和弱氧化剂的选择性氧化物 - 氧氮化物蚀刻工艺
公开(公告)号：US06436841B1
公开(公告)日：2002-08-20
申请号：US09949506
申请日：2001-09-10
申请人： Ming Huan Tsai , Bao-Ching Pen , Mei-Ru Kuo , Hun-Jan Tao
发明人： Ming Huan Tsai , Bao-Ching Pen , Mei-Ru Kuo , Hun-Jan Tao
IPC分类号： H01L21302
CPC分类号： H01L21/76897 , H01L21/31116 , H01L21/3144
摘要： A method of forming a borderless contact, comprising the following steps. A substrate having an exposed conductive structure is provided. An oxynitride etch stop layer is formed over the substrate and the exposed conductive structure. An oxide dielectric layer is formed over the oxynitride etch stop layer. The oxide dielectric layer is etched with an etch process having a high selectivity of oxide-to-oxynitride to form a contact hole therein exposing a portion of the oxynitride etch stop layer over at least a portion of the exposed conductive structure. The etch process not appreciably etching the oxynitride etch stop layer and including: a fluorine containing gas; an inert gas; and a weak oxidant. The exposed portion of the oxynitride etch stop layer over at least a portion of the conductive structure is removed. A borderless contact is formed within the contact hole. The borderless contact being in electrical connection with at least a portion of the conductive structure.
摘要翻译：一种形成无边界接触的方法，包括以下步骤。提供具有暴露的导电结构的衬底。在衬底和暴露的导电结构之上形成氮氧化物蚀刻停止层。在氧氮化物蚀刻停止层上形成氧化物介电层。用具有高选择性的氧化物 - 氮氧化物的蚀刻工艺来蚀刻氧化物介电层，以在其中形成接触孔，使暴露的导电结构的至少一部分上的氮氧化物蚀刻停止层的一部分暴露。蚀刻工艺不明显地蚀刻氧氮化物蚀刻停止层，并且包括：含氟气体; 惰性气体和弱氧化剂。除去导电结构的至少一部分上的氧氮化物蚀刻停止层的暴露部分。在接触孔内形成无边界接触。无边界接触与至少一部分导电结构电连接。

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