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1. 发明授权

US08510500B2 Device driver including a flash memory file system and method thereof and a flash memory device and method thereof 有权
标题翻译：包括闪速存储器文件系统及其方法的设备驱动程序和闪速存储器件及其方法
公开(公告)号：US08510500B2
公开(公告)日：2013-08-13
申请号：US12926193
申请日：2010-11-01
申请人： Min-Soo Moon , Chan-Ik Park , Prakash Talawar
发明人： Min-Soo Moon , Chan-Ik Park , Prakash Talawar
IPC分类号： G06F12/00
CPC分类号： G06F12/0246
摘要： A device driver including a flash memory file system and method thereof and a flash memory device and method thereof are provided. The example device driver may include a flash memory file system configured to receive data scheduled to be written into the flash memory device, the flash memory file system selecting one of a first data storage area and a second data storage area within the flash memory device to write the received data to based upon an expected frequency of updating for the received data, the first data storage area configured to store data which is expected to be updated more often than the second data storage area. The example flash memory device may include a first data storage area configured to store first data, the first data having a first expected frequency for updating and a second data storage area configured to store second data, the second data having a second expected frequency of updating, the first expected frequency being higher than the second expected frequency.
摘要翻译：提供了一种包括闪速存储器文件系统及其方法的设备驱动器和闪速存储器件及其方法。该示例设备驱动器可以包括：闪速存储器文件系统，被配置为接收被调度以写入闪速存储器件的数据;闪速存储器文件系统，选择闪速存储器件内的第一数据存储区域和第二数据存储区域中的一个，基于接收到的数据的预期更新频率来写入接收到的数据，第一数据存储区域被配置为存储期望比第二数据存储区域更频繁地更新的数据。示例性闪存设备可以包括被配置为存储第一数据的第一数据存储区域，具有用于更新的第一预期频率的第一数据和被配置为存储第二数据的第二数据存储区域，第二数据具有第二预期频率的更新，第一预期频率高于第二预期频率。

2. 发明申请

US20110055464A1 Device driver including a flash memory file system and method thereof and a flash memory device and method thereof 有权
标题翻译：包括闪速存储器文件系统及其方法的设备驱动程序和闪速存储器件及其方法
公开(公告)号：US20110055464A1
公开(公告)日：2011-03-03
申请号：US12926193
申请日：2010-11-01
申请人： Min-Soo Moon , Chan-Ik Park , Prakash Talawar
发明人： Min-Soo Moon , Chan-Ik Park , Prakash Talawar
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F12/0246
摘要： A device driver including a flash memory file system and method thereof and a flash memory device and method thereof are provided. The example device driver may include a flash memory file system configured to receive data scheduled to be written into the flash memory device, the flash memory file system selecting one of a first data storage area and a second data storage area within the flash memory device to write the received data to based upon an expected frequency of updating for the received data, the first data storage area configured to store data which is expected to be updated more often than the second data storage area. The example flash memory device may include a first data storage area configured to store first data, the first data having a first expected frequency for updating and a second data storage area configured to store second data, the second data having a second expected frequency of updating, the first expected frequency being higher than the second expected frequency.
摘要翻译：提供了一种包括闪速存储器文件系统及其方法的设备驱动器和闪速存储器件及其方法。该示例设备驱动器可以包括：闪速存储器文件系统，被配置为接收被调度以写入闪速存储器件的数据;闪速存储器文件系统，选择闪速存储器件内的第一数据存储区域和第二数据存储区域中的一个，基于接收到的数据的预期更新频率来写入接收到的数据，第一数据存储区域被配置为存储期望比第二数据存储区域更频繁地更新的数据。示例性闪存设备可以包括被配置为存储第一数据的第一数据存储区域，具有用于更新的第一预期频率的第一数据和被配置为存储第二数据的第二数据存储区域，第二数据具有第二预期频率的更新，第一预期频率高于第二预期频率。

3. 发明申请

US20080082729A1 Device driver including a flash memory file system and method thereof and a flash memory device and method thereof 有权
标题翻译：包括闪速存储器文件系统及其方法的设备驱动程序和闪速存储器件及其方法
公开(公告)号：US20080082729A1
公开(公告)日：2008-04-03
申请号：US11605265
申请日：2006-11-29
申请人： Min-Soo Moon , Chan-Ik Park , Prakash Talawar
发明人： Min-Soo Moon , Chan-Ik Park , Prakash Talawar
IPC分类号： G06F12/00
CPC分类号： G06F12/0246
摘要： A device driver including a flash memory file system and method thereof and a flash memory device and method thereof are provided. The example device driver may include a flash memory file system configured to receive data scheduled to be written into the flash memory device, the flash memory file system selecting one of a first data storage area and a second data storage area within the flash memory device to write the received data to based upon an expected frequency of updating for the received data, the first data storage area configured to store data which is expected to be updated more often than the second data storage area. The example flash memory device may include a first data storage area configured to store first data, the first data having a first expected frequency for updating and a second data storage area configured to store second data, the second data having a second expected frequency of updating, the first expected frequency being higher than the second expected frequency.
摘要翻译：提供了一种包括闪速存储器文件系统及其方法的设备驱动器和闪速存储器件及其方法。该示例设备驱动器可以包括：闪速存储器文件系统，被配置为接收被调度以写入闪速存储器件的数据;闪速存储器文件系统，选择闪速存储器件内的第一数据存储区域和第二数据存储区域中的一个，基于接收到的数据的预期更新频率来写入接收到的数据，第一数据存储区域被配置为存储期望比第二数据存储区域更频繁地更新的数据。示例性闪存设备可以包括被配置为存储第一数据的第一数据存储区域，具有用于更新的第一预期频率的第一数据和被配置为存储第二数据的第二数据存储区域，第二数据具有第二预期频率的更新，第一预期频率高于第二预期频率。

4. 发明授权

US07844772B2 Device driver including a flash memory file system and method thereof and a flash memory device and method thereof 有权
标题翻译：包括闪速存储器文件系统及其方法的设备驱动程序和闪速存储器件及其方法
公开(公告)号：US07844772B2
公开(公告)日：2010-11-30
申请号：US11605265
申请日：2006-11-29
申请人： Min-Soo Moon , Chan-Ik Park , Prakash Talawar
发明人： Min-Soo Moon , Chan-Ik Park , Prakash Talawar
IPC分类号： G06F12/00
CPC分类号： G06F12/0246
摘要： A device driver including a flash memory file system and method thereof and a flash memory device and method thereof are provided. The example device driver may include a flash memory file system configured to receive data scheduled to be written into the flash memory device, the flash memory file system selecting one of a first data storage area and a second data storage area within the flash memory device to write the received data to based upon an expected frequency of updating for the received data, the first data storage area configured to store data which is expected to be updated more often than the second data storage area. The example flash memory device may include a first data storage area configured to store first data, the first data having a first expected frequency for updating and a second data storage area configured to store second data, the second data having a second expected frequency of updating, the first expected frequency being higher than the second expected frequency.
摘要翻译：提供了一种包括闪速存储器文件系统及其方法的设备驱动器和闪速存储器件及其方法。该示例设备驱动器可以包括：闪速存储器文件系统，被配置为接收被调度以写入闪速存储器件的数据;闪速存储器文件系统，选择闪速存储器件内的第一数据存储区域和第二数据存储区域中的一个，基于接收到的数据的预期更新频率来写入接收到的数据，第一数据存储区域被配置为存储期望比第二数据存储区域更频繁地更新的数据。示例性闪存设备可以包括被配置为存储第一数据的第一数据存储区域，具有用于更新的第一预期频率的第一数据和被配置为存储第二数据的第二数据存储区域，第二数据具有第二预期频率的更新，第一预期频率高于第二预期频率。

5. 发明授权

US07970981B2 Flash memory device with multi-level cells and method of writing data therein 有权
标题翻译：具有多级单元的闪存设备及其中写入数据的方法
公开(公告)号：US07970981B2
公开(公告)日：2011-06-28
申请号：US11702573
申请日：2007-02-06
申请人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
发明人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
IPC分类号： G06F12/06 , G11C16/04 , G11C11/34 , G11C16/06
CPC分类号： G06F3/0613 , G06F3/0631 , G06F3/0632 , G06F3/064 , G06F3/0679 , G06F12/0246 , G06F2212/1021 , G06F2212/2022 , G06F2212/7202 , G06F2212/7208 , G11C2211/5641
摘要： In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
摘要翻译：一方面，提供一种在闪存系统中写入数据的方法。闪存系统根据日志块映射方案形成地址映射模式。该方法包括确定要写入日志块的数据的写入模式，并根据数据的写入模式将SLC和MLC块中的一个分配给对数块。

6. 发明申请

US20100153631A1 Method and data storage device for processing commands 有权
标题翻译：用于处理命令的方法和数据存储设备
公开(公告)号：US20100153631A1
公开(公告)日：2010-06-17
申请号：US12657029
申请日：2010-01-11
申请人： Kui-Yon Moon , Moon-Wook Oh , Do-Geun Kim , Chan-Ik Park
发明人： Kui-Yon Moon , Moon-Wook Oh , Do-Geun Kim , Chan-Ik Park
IPC分类号： G06F12/00 , G06F12/02 , G06F11/16 , G06F13/14
CPC分类号： G06F12/0246 , G06F12/08 , G06F13/1694 , G06F2212/7202 , G11C11/5628 , G11C16/10 , G11C2211/5641
摘要： A data storage device for processing a command includes a host interface and a controller. The host interface stores program information sent within the command from a host. The controller decodes the program information that indicates a memory type to be accessed for the command. In addition, the controller determines whether the specified memory type can be accessed according to the command. The controller performs the command by accessing the memory type when the memory type specified by the program information is available for access.
摘要翻译：用于处理命令的数据存储装置包括主机接口和控制器。主机接口存储从主机发出的命令中发送的程序信息。控制器对指示要访问的命令的存储器类型的程序信息进行解码。此外，控制器根据命令确定是否可以访问指定的存储器类型。当由程序信息指定的存储器类型可用于访问时，控制器通过访问存储器类型执行命令。

7. 发明申请

US20080104309A1 Flash memory device with multi-level cells and method of writing data therein 有权
标题翻译：具有多级单元的闪存设备及其中写入数据的方法
公开(公告)号：US20080104309A1
公开(公告)日：2008-05-01
申请号：US11702573
申请日：2007-02-06
申请人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
发明人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
IPC分类号： G06F12/06
CPC分类号： G06F3/0613 , G06F3/0631 , G06F3/0632 , G06F3/064 , G06F3/0679 , G06F12/0246 , G06F2212/1021 , G06F2212/2022 , G06F2212/7202 , G06F2212/7208 , G11C2211/5641
摘要： In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
摘要翻译：一方面，提供一种在闪存系统中写入数据的方法。闪存系统根据日志块映射方案形成地址映射模式。该方法包括确定要写入日志块的数据的写入模式，并根据数据的写入模式将SLC和MLC块中的一个分配给对数块。

8. 发明申请

US20060179212A1 Flash memory control devices that support multiple memory mapping schemes and methods of operating same 有权
标题翻译：支持多个内存映射方案的Flash存储器控制设备及其操作方法
公开(公告)号：US20060179212A1
公开(公告)日：2006-08-10
申请号：US11289175
申请日：2005-11-29
申请人： Jin-Hyuk Kim , Young-Joon Choi , Chan-Ik Park
发明人： Jin-Hyuk Kim , Young-Joon Choi , Chan-Ik Park
IPC分类号： G06F12/00
CPC分类号： G06F12/0246
摘要： There is provided an apparatus for controlling a flash memory, which includes a memory for storing a plurality of flash translation layers; and a control block for, when an access is requested from outside, determining a pattern of the access, selecting one of the flash translation layers stored in the memory based on the determination result, and managing mapping data of the flash memory based on the selected flash translation layer.
摘要翻译：提供了一种用于控制闪速存储器的装置，其包括用于存储多个闪存转换层的存储器; 以及控制块，用于当从外部请求访问时，确定所述访问的模式，基于所述确定结果选择存储在所述存储器中的闪存转换层中的一个，以及基于所选择的所述闪存管理映射数据闪光翻译层。

9. 发明申请

US20120159054A1 FLASH MEMORY DEVICE WITH MULTI-LEVEL CELLS AND METHOD OF WRITING DATA THEREIN 审中-公开
标题翻译：具有多级电池的闪存存储器件和写入数据的方法
公开(公告)号：US20120159054A1
公开(公告)日：2012-06-21
申请号：US13406862
申请日：2012-02-28
申请人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
发明人： Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
IPC分类号： G06F12/02
CPC分类号： G06F3/0613 , G06F3/0631 , G06F3/0632 , G06F3/064 , G06F3/0679 , G06F12/0246 , G06F2212/1021 , G06F2212/2022 , G06F2212/7202 , G06F2212/7208 , G11C2211/5641
摘要： In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
摘要翻译：一方面，提供一种在闪存系统中写入数据的方法。闪存系统根据日志块映射方案形成地址映射模式。该方法包括确定要写入日志块的数据的写入模式，并根据数据的写入模式将SLC和MLC块中的一个分配给对数块。

10. 发明授权

US08051258B2 Apparatus and methods using invalidity indicators for buffered memory 有权
标题翻译：用于缓冲存储器的无效指示器的装置和方法
公开(公告)号：US08051258B2
公开(公告)日：2011-11-01
申请号：US12860961
申请日：2010-08-23
申请人： Chan-Ik Park , Sang Lyul Min , Tae-Sung Jung , Kyun-Ho Kook
发明人： Chan-Ik Park , Sang Lyul Min , Tae-Sung Jung , Kyun-Ho Kook
IPC分类号： G06F12/00
CPC分类号： G06F3/0656 , G06F3/0616 , G06F3/0625 , G06F3/0679 , Y02D10/154
摘要： A storage system includes a storage medium configured to store data and a buffer memory configured to buffer data to be written to the storage medium. The storage system further includes a controller configured to selectively transfer the buffered data to the storage medium responsive to an invalidity indicator received from an external source. For example, the invalidity indicator may comprise unwrite information received from an external source, e.g., information that indicates that selected buffered data corresponds to deleted file data.
摘要翻译：存储系统包括被配置为存储数据的存储介质和被配置为缓冲要写入存储介质的数据的缓冲存储器。存储系统还包括控制器，其被配置为响应于从外部源接收的无效指示符而选择性地将缓冲的数据传送到存储介质。例如，无效指示符可以包括从外部源接收的重写信息，例如指示所选择的缓冲数据对应于已删除的文件数据的信息。

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