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1. 发明授权

US08812773B2 Method of merging blocks in a semiconductor memory device, and semiconductor memory device to perform a method of merging blocks 有权
标题翻译：在半导体存储器件中合并块的方法以及半导体存储器件来执行合并块的方法
公开(公告)号：US08812773B2
公开(公告)日：2014-08-19
申请号：US13114262
申请日：2011-05-24
申请人： Min-Seok Kim , Ki-Tae Park
发明人： Min-Seok Kim , Ki-Tae Park
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7202 , G06F2212/7205
摘要： In a method of merging blocks in a semiconductor memory device according to example embodiments, a plurality of data are written into one or more first blocks using a first program method. One or more merge target blocks that are required to be merged are selected among the one or more first blocks. A merge-performing block for a block merge operation is selected among the one or more first blocks and one or more second blocks. A plurality of merge target data are written from the merge target blocks into the merge-performing block using a second program method that is different from the first program method.
摘要翻译：在根据示例性实施例的半导体存储器件中的块的合并方法中，使用第一编程方法将多个数据写入一个或多个第一块。在一个或多个第一块中选择需要合并的一个或多个合并目标块。在一个或多个第一块和一个或多个第二块中选择用于块合并操作的合并执行块。使用与第一编程方法不同的第二程序方法，将多个合并目标数据从合并目标块写入合并执行块。

2. 发明申请

US20110296087A1 METHOD OF MERGING BLOCKS IN A SEMICONDUCTOR MEMORY DEVICE, AND SEMICONDUCTOR MEMORY DEVICE TO PERFORM A METHOD OF MERGING BLOCKS 有权
标题翻译：在半导体存储器件中合并块的方法和用于执行合并块的方法的半导体存储器件
公开(公告)号：US20110296087A1
公开(公告)日：2011-12-01
申请号：US13114262
申请日：2011-05-24
申请人： Min-Seok Kim , Ki-Tae Park
发明人： Min-Seok Kim , Ki-Tae Park
IPC分类号： G06F12/02 , G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7202 , G06F2212/7205
摘要： In a method of merging blocks in a semiconductor memory device according to example embodiments, a plurality of data are written into one or more first blocks using a first program method. One or more merge target blocks that are required to be merged are selected among the one or more first blocks. A merge-performing block for a block merge operation is selected among the one or more first blocks and one or more second blocks. A plurality of merge target data are written from the merge target blocks into the merge-performing block using a second program method that is different from the first program method.
摘要翻译：在根据示例性实施例的半导体存储器件中的块的合并方法中，使用第一编程方法将多个数据写入一个或多个第一块。在一个或多个第一块中选择需要合并的一个或多个合并目标块。在一个或多个第一块和一个或多个第二块中选择用于块合并操作的合并执行块。使用与第一编程方法不同的第二程序方法，将多个合并目标数据从合并目标块写入合并执行块。

3. 外观设计

USD710874S1 Display screen with graphical user interface 有权
公开(公告)号：USD710874S1
公开(公告)日：2014-08-12
申请号：US29426639
申请日：2012-07-09
申请人： Min-Seok Kim , Hee-Kyung Jeon , Jee-Yeun Wang
设计人： Min-Seok Kim , Hee-Kyung Jeon , Jee-Yeun Wang

4. 发明申请

US20090010538A1 Apparatus and method for automatically computing gamma correction curve 审中-公开
标题翻译：自动计算伽马校正曲线的装置和方法
公开(公告)号：US20090010538A1
公开(公告)日：2009-01-08
申请号：US12215203
申请日：2008-06-25
申请人： Min-Seok Kim
发明人： Min-Seok Kim
IPC分类号： G06K9/03
CPC分类号： H04N5/202
摘要： The present invention relates to apparatus and method for automatically computing a gamma correction curve. The apparatus according to the present invention comprises an image obtaining unit for receiving an input image data of a color chart through an image interface; a coordinate calculating unit for measuring input brightness values of a plurality of ROIs (Regions of Interest) of the input image and comparing an input brightness value of each ROI with a preset target brightness value of each ROI to calculate gamma correction coordinates for a plurality of points of a gamma correction curve; and a curve computing unit for applying interpolation to a plurality of the calculated gamma correction coordinates to compute a gamma correction curve.
摘要翻译：本发明涉及用于自动计算伽马校正曲线的装置和方法。根据本发明的装置包括：图像获取单元，用于通过图像接口接收彩色图表的输入图像数据; 坐标计算单元，用于测量输入图像的多个ROI（感兴趣区域）的输入亮度值，并将每个ROI的输入亮度值与每个ROI的预设目标亮度值进行比较，以计算多个ROI的伽马校正坐标伽马校正曲线的点; 以及曲线计算单元，用于对多个所计算的伽马校正坐标进行插值以计算伽马校正曲线。

5. 发明申请

US20080266408A1 Apparatus and method for generating panorama image and computer readable medium stored thereon computer executable instructions for performing the method 失效
标题翻译：用于产生全景图像和存储在其上的计算机可读介质的装置和方法，用于执行该方法的计算机可执行指令
公开(公告)号：US20080266408A1
公开(公告)日：2008-10-30
申请号：US12150387
申请日：2008-04-28
申请人： Min-Seok Kim
发明人： Min-Seok Kim
IPC分类号： H04N5/225
CPC分类号： H04N5/2628 , G06T3/4038 , H04N1/3876 , H04N5/23238
摘要： The present invention relates to apparatus and method for generating a panorama image, and a computer readable medium stored thereon computer executable instructions for performing the method.The apparatus for generating a panorama image according to the present invention comprises an input unit for receiving a plurality of input object images for panorama image generation; an edge detecting unit for outputting edge data of the input object images; a matching area output unit for outputting a matching area, namely, a standard area for pattern matching, within the edge data; a pattern matching unit for matching patterns of a plurality of the object images based on the matching area; and a stitching unit for generating a plurality of the object images into a panorama image based on the matched patterns.
摘要翻译：本发明涉及用于产生全景图像的装置和方法，以及存储在其上的计算机可读介质，用于执行该方法的计算机可执行指令。根据本发明的用于产生全景图像的装置包括：输入单元，用于接收用于全景图像生成的多个输入对象图像; 边缘检测单元，用于输出输入对象图像的边缘数据; 匹配区域输出单元，用于在所述边缘数据内输出匹配区域，即用于模式匹配的标准区域; 模式匹配单元，用于基于匹配区域匹配多个对象图像的图案; 以及用于基于匹配的图案将多个对象图像生成为全景图像的拼接单元。

6. 发明授权

US07394548B2 Heterodyne laser interferometer using heterogenous mode helium-neon laser and super heterodyne phase measuring method 有权
标题翻译：异步激光干涉仪采用异质氦氖激光和超外差相测量方法
公开(公告)号：US07394548B2
公开(公告)日：2008-07-01
申请号：US10519469
申请日：2002-07-15
申请人： Seung-Woo Kim , Min-Seok Kim
发明人： Seung-Woo Kim , Min-Seok Kim
IPC分类号： G01B9/02
CPC分类号： G01B9/02003 , G01B2290/70
摘要： In the method and a device for detecting the phase of a moving object using a heterodyne interferometer, a heterogeneous mode helium-neon laser is used as a direct light source to increase a measuring speed, a measuring resolution, and minimize the loss of the light source. Signals, which have only a frequency difference between reference signals or measured signals and arbitrary signals, are extracted from signals which are obtained by multiplying the arbitrary frequency signals by the reference or measured signals. After frequencies of the reference and measured signals are converted, a phase difference of the extracted signals and displacement of the moving object is measured. The system includes a laser light source, an optical interferometer, a frequency converter, and a phase measurer. The light source uses output light, emitted from the laser generator, which is stabilized in frequency, and has two frequencies which are at right angles to each other and linearly polarized.
摘要翻译：在该方法和使用外差干涉仪来检测移动物体的相位的装置中，使用异质模式氦氖激光器作为直接光源，以增加测量速度，测量分辨率和使光的损失最小化资源。从参考信号或测量信号和任意信号之间仅具有频率差的信号从通过将任意频率信号乘以参考或测量信号而获得的信号中提取出来。在参考和测量信号的频率被转换之后，测量提取的信号的相位差和移动物体的位移。该系统包括激光光源，光干涉仪，变频器和相位测量器。光源使用从激光发生器发射的输出光，其频率稳定，并且具有彼此成直角和线偏振的两个频率。

7. 发明申请

US20090166751A1 Image sensor and method for manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US20090166751A1
公开(公告)日：2009-07-02
申请号：US12344503
申请日：2008-12-27
申请人： Min-Seok Kim
发明人： Min-Seok Kim
IPC分类号： H01L29/78 , H01L21/8238
CPC分类号： H01L21/26506 , H01L21/84 , H01L27/12 , H01L29/78642
摘要： A method for manufacturing a CMOS transistor includes preparing a silicon substrate provided with a first buried layer, a second buried layer and a body, vertically forming device-isolation films inside the body, forming a first-type well inside the body arranged on the first buried layer, and vertically forming a first source and drain region inside the first-type well, forming a second-type well inside the body arranged on the second buried layer, and vertically forming a second source and drain region inside the second-type well, and vertically forming a recessed gate between the first-type well and the second-type well.
摘要翻译：制造CMOS晶体管的方法包括制备设置有第一掩埋层，第二掩埋层和主体的硅衬底，在体内垂直形成器件隔离膜，在布置在第一掩模层上的主体内部形成第一类阱并且在第一型阱内部垂直形成第一源极和漏极区域，在布置在第二掩埋层上的主体内部形成第二类阱，并且在第二类型阱内部垂直形成第二源极和漏极区域并且在第一类型阱和第二类型阱之间垂直地形成凹入的栅极。

8. 发明申请

US20060146672A1 Optical disk having divided write strategy tuning areas, optical recording/reproducing apparatus and method using the same 有权
标题翻译：具有划分的写入策略调谐区域的光盘，光学记录/再现装置和使用其的方法
公开(公告)号：US20060146672A1
公开(公告)日：2006-07-06
申请号：US11320578
申请日：2005-12-30
申请人： Min-Seok Kim , Jong-kyu Kim , Yong-jin Ahn , Kyung-pil Kang
发明人： Min-Seok Kim , Jong-kyu Kim , Yong-jin Ahn , Kyung-pil Kang
IPC分类号： G11B5/09
CPC分类号： G11B7/00736 , G11B7/1267
摘要： An optical recording/reproducing apparatus includes an optical pickup unit configured to scan an optical disk with an optical signal to record and reproduce data. A power tuning unit is configured to scan a first track with the optical signal to record a first test data to the first track, while changing a power level of the optical signal within a predetermined range in sequence. A scanning time tuning unit is configured to scan a second track with an optical signal to record a second test data to the second track, while changing a scanning time within a predetermined range in sequence. A state detection unit is configured to detect a reproduction state of the first test data and second test data. A controller is configured to check the reproductions state of the first test data and second test data and determine an optimal power level and optimal scanning time. Accordingly, a write strategy is rapidly and optically tuned.
摘要翻译：光学记录/再现装置包括：光学拾取单元，被配置为用光信号扫描光盘以记录和再现数据。功率调整单元被配置为在顺序地在预定范围内改变光信号的功率电平的同时，用光信号扫描第一轨道，以将第一测试数据记录到第一轨道。扫描时间调谐单元被配置为用光信号扫描第二轨道，以便在第一轨道内记录第二测试数据，同时依次改变预定范围内的扫描时间。状态检测单元被配置为检测第一测试数据和第二测试数据的再现状态。控制器被配置为检查第一测试数据和第二测试数据的复制状态，并确定最佳功率水平和最佳扫描时间。因此，写入策略被快速和光学地调谐。

9. 发明申请

US20100117233A1 METAL LINE IN SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 有权
标题翻译：半导体器件中的金属线及其形成方法
公开(公告)号：US20100117233A1
公开(公告)日：2010-05-13
申请号：US12582849
申请日：2009-10-21
申请人： Min-Seok Kim
发明人： Min-Seok Kim
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L24/05 , H01L21/6835 , H01L21/76828 , H01L24/03 , H01L2221/68327 , H01L2221/6834 , H01L2224/02125 , H01L2224/03462 , H01L2224/0347 , H01L2224/03505 , H01L2224/04042 , H01L2224/05022 , H01L2224/0508 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05644 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/00014 , H01L2224/05099 , H01L2224/05599 , H01L2224/13099 , H01L2224/13599 , H01L2224/29099 , H01L2224/29599
摘要： A method includes forming a buffer lower metal line over a semiconductor substrate for absorbing an external impact, forming a pre-metal-dielectric layer which covers the buffer lower metal line, the pre-metal-dielectric layer having a via hole formed therein to expose a portion of the buffer lower metal line, forming a seed layer over a surface of the pre-metal-dielectric layer having the via hole formed therein, forming polyimide which exposes the via hole and the seed layer formed over the pre-metal-dielectric layer in the vicinity of the via hole, growing an upper metal line over the exposed seed layer, subjecting the semiconductor substrate having the upper metal line formed thereon to a thermal process, removing the polyimide by dry etching, and bonding a bonding portion onto the upper metal line.
摘要翻译：一种方法包括在半导体衬底上形成用于吸收外部冲击的缓冲下金属线，形成覆盖缓冲下金属线的预金属介电层，其中形成有通孔的预金属介电层露出缓冲下部金属线的一部分，在其上形成有通孔的预金属 - 电介质层的表面上形成晶种层，形成聚酰亚胺，其暴露出在金属前电介质上形成的通孔和晶种层在通孔的附近形成上金属线，在其上形成具有上金属线的半导体衬底进行热处理，通过干蚀刻去除聚酰亚胺，并将接合部分接合到上金属线。

10. 发明申请

US20090315109A1 SEMICONDUCTOR DEVICE HAVING OTP CELLS AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：具有OTP电池的半导体器件及其制造方法
公开(公告)号：US20090315109A1
公开(公告)日：2009-12-24
申请号：US12484305
申请日：2009-06-15
申请人： Min-Seok Kim
发明人： Min-Seok Kim
IPC分类号： H01L29/78 , H01L21/336 , H01L21/02 , H01L23/525
CPC分类号： H01L29/66825 , H01L23/5252 , H01L27/11206 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a deep N-type well region which may be formed by applying an ion-implantation process, using a mask, to a predetermined pattern over a portion of a semiconductor substrate over which an oxide film is formed, a dwell region which may be formed by applying an ion-implantation process, using a mask, to a predetermined pattern over a portion of the N-type well region, a shallow N-type well region and a drain region which may be respectively formed by applying an ion-implantation process, using a mask, to a predetermined pattern over a portion of the deep N-type well region, a source region which may be formed by applying an ion-implantation process, using a mask, to a predetermined pattern over a portion of the dwell region, a contact hole which may be formed by being filled with a metal after forming an inter-metal dielectric layer over a portion of the semiconductor substrate over which the source region is formed, and a metal line formed over a portion of the contact hole.
摘要翻译：半导体器件包括深N型阱区，其可以通过使用掩模在形成氧化物膜的半导体衬底的一部分上施加到预定图案的离子注入工艺来形成，该区域是可以通过在N型阱区域的一部分，浅N型阱区域和漏极区域上施加使用掩模的离子注入工艺到预定图案来形成，所述浅N型阱区域和漏极区域可以分别通过施加离子在深N型阱区域的一部分上使用掩模将掩模施加到预定图案上，源区域可以通过使用掩模在一部分上施加预定图案的离子注入工艺来形成在形成有源区域的半导体基板的一部分上形成金属间介电层之后，可以通过填充金属形成的接触孔，以及在形成有源区的部分上形成的金属线接触孔。

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