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1. 发明申请

US20110182111A1 ELECTROMECHANICAL SWITCH AND METHOD OF FORMING THE SAME 有权
标题翻译：电动开关及其形成方法
公开(公告)号：US20110182111A1
公开(公告)日：2011-07-28
申请号：US13082605
申请日：2011-04-08
申请人： Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Weonwi Jang , Keun-Hwi Cho
发明人： Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Weonwi Jang , Keun-Hwi Cho
IPC分类号： G11C11/24 , G11C11/50
CPC分类号： H01L28/40 , H01L27/10894
摘要： A memory device includes a storage node, a first electrode, and a second electrode formed in a memory cell, the storage node stores electrical charges, the first electrode comprising a first portion electrically connected to a second portion, the first portion moves to connect to the storage node when the second electrode is energized.
摘要翻译：存储装置包括存储节点，第一电极和形成在存储单元中的第二电极，所述存储节点存储电荷，所述第一电极包括电连接到第二部分的第一部分，所述第一部分移动以连接到当第二电极通电时的存储节点。

2. 发明授权

US08270211B2 Electromechanical switch and method of forming the same 有权
标题翻译：机电开关及其形成方法
公开(公告)号：US08270211B2
公开(公告)日：2012-09-18
申请号：US13082605
申请日：2011-04-08
申请人： Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Weonwi Jang , Keun-Hwi Cho
发明人： Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Weonwi Jang , Keun-Hwi Cho
IPC分类号： G11C11/50
CPC分类号： H01L28/40 , H01L27/10894
摘要： A memory device includes a storage node, a first electrode, and a second electrode formed in a memory cell, the storage node stores electrical charges, the first electrode comprising a first portion electrically connected to a second portion, the first portion moves to connect to the storage node when the second electrode is energized.
摘要翻译：存储装置包括存储节点，第一电极和形成在存储单元中的第二电极，所述存储节点存储电荷，所述第一电极包括电连接到第二部分的第一部分，所述第一部分移动以连接到当第二电极通电时的存储节点。

3. 发明授权

US07929341B2 Electromechanical switch and method of forming the same 有权
标题翻译：机电开关及其形成方法
公开(公告)号：US07929341B2
公开(公告)日：2011-04-19
申请号：US12392780
申请日：2009-02-25
申请人： Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Weonwi Jang , Keun-Hwi Cho
发明人： Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Weonwi Jang , Keun-Hwi Cho
IPC分类号： G11C11/50
CPC分类号： H01L28/40 , H01L27/10894
摘要： A memory device includes a storage node, a first electrode, and a second electrode formed in a memory cell, the storage node stores electrical charges, the first electrode comprising a first portion electrically connected to a second portion, the first portion moves to connect to the storage node when the second electrode is energized.
摘要翻译：存储装置包括存储节点，第一电极和形成在存储单元中的第二电极，所述存储节点存储电荷，所述第一电极包括电连接到第二部分的第一部分，所述第一部分移动以连接到当第二电极通电时的存储节点。

4. 发明授权

US08391057B2 Switch and method of forming the same 有权
标题翻译：开关及其形成方法
公开(公告)号：US08391057B2
公开(公告)日：2013-03-05
申请号：US12533581
申请日：2009-07-31
申请人： Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Yong-Hyun Kwon , Weon-Wi Jang , Keun-Hwi Cho
发明人： Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Yong-Hyun Kwon , Weon-Wi Jang , Keun-Hwi Cho
IPC分类号： G11C11/50 , H01L27/108
CPC分类号： H01L27/101 , H01L27/108 , H01L27/10882 , H01L27/10885 , H01L27/10891 , H01L27/10897 , H01L28/40 , H01L29/685
摘要： A memory device includes a memory cell that includes a storage node, a first electrode, and a second electrode, the storage node stores an electrical charge, and the first electrode moves to connect to the storage node when the second electrode is energized.
摘要翻译：存储器件包括存储单元，其包括存储节点，第一电极和第二电极，所述存储节点存储电荷，并且当所述第二电极通电时，所述第一电极移动以连接到所述存储节点。

5. 发明申请

US20100135064A1 SWITCH AND METHOD OF FORMING THE SAME 有权
标题翻译：开关及其形成方法
公开(公告)号：US20100135064A1
公开(公告)日：2010-06-03
申请号：US12533581
申请日：2009-07-31
申请人： Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Yong-Hyun Kwon , Weon-Wi Jang , Keun-Hwi Cho
发明人： Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Yong-Hyun Kwon , Weon-Wi Jang , Keun-Hwi Cho
IPC分类号： G11C11/24 , H01L27/108
CPC分类号： H01L27/101 , H01L27/108 , H01L27/10882 , H01L27/10885 , H01L27/10891 , H01L27/10897 , H01L28/40 , H01L29/685
摘要： A memory device includes a memory cell that includes a storage node, a first electrode, and a second electrode, the storage node stores an electrical charge, and the first electrode moves to connect to the storage node when the second electrode is energized.
摘要翻译：存储器件包括存储单元，其包括存储节点，第一电极和第二电极，所述存储节点存储电荷，并且当所述第二电极通电时，所述第一电极移动以连接到所述存储节点。

6. 发明申请

US20110006353A1 DRAM DEVICES 审中-公开
标题翻译： DRAM设备
公开(公告)号：US20110006353A1
公开(公告)日：2011-01-13
申请号：US12830788
申请日：2010-07-06
申请人： Min-Sang KIM , Dong-Won Kim , Jun Seo , Keun-Hwi Cho , Hyun-Jun Bae , Ji-Myoung Lee
发明人： Min-Sang KIM , Dong-Won Kim , Jun Seo , Keun-Hwi Cho , Hyun-Jun Bae , Ji-Myoung Lee
IPC分类号： H01L27/108
CPC分类号： H01L27/10894 , H01L27/10814 , H01L27/10852 , H01L27/10855 , H01L28/60
摘要： A DRAM device includes a plug on a substrate, a conductive plate electrically connected to the plug and overlapping the substrate, at least one capacitor on the substrate and spaced apart from the plug, and at least one word line under the conductive plate and spaced apart from the conductive plate. The DRAM device further includes at least one first conductive pad under the conductive plate, the at least one first conductive pad being spaced apart from the conductive plate in a first state and being electrically connected to the conductive plate in a second state, the at least one first conductive pad being disposed between the plug and an adjacent word line of the at least one word line, and the at least one first conductive pad being electrically connected to a respective capacitor of the at least one capacitor.
摘要翻译： DRAM装置包括在基板上的插头，电连接到插头并与衬底重叠的导电板，基板上的至少一个电容器和与插头间隔开的至少一个电容器，以及导电板下面的至少一个字线并间隔开从导电板。 DRAM器件还包括在导电板下方的至少一个第一导电焊盘，所述至少一个第一导电焊盘在第一状态下与导电板间隔开并且在第二状态下电连接到导电板，至少一个第一导电焊盘设置在所述插头和所述至少一个字线的相邻字线之间，并且所述至少一个第一导电焊盘电连接到所述至少一个电容器的相应电容器。

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