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1. 发明申请

US20070284999A1 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US20070284999A1
公开(公告)日：2007-12-13
申请号：US11893220
申请日：2007-08-14
申请人： Min-Hsun Hsieh , Ta-Cheng Hsu , Ya-Ju Lee , Wei-Chih Peng , Chi-Wei Lu , Ya-Lan Yang , Ying-Yong Su , Meng-Lnn Tsai
发明人： Min-Hsun Hsieh , Ta-Cheng Hsu , Ya-Ju Lee , Wei-Chih Peng , Chi-Wei Lu , Ya-Lan Yang , Ying-Yong Su , Meng-Lnn Tsai
IPC分类号： H01J5/16
CPC分类号： H01L33/22 , H01L33/08 , H01L33/508
摘要： A light-emitting device comprising a substrate, a light-emitting stack, and a transparent adhesive layer having wavelength-converting materials embedded therein formed within the light-emitting device is provided.
摘要翻译：提供了一种发光器件，其包括衬底，发光叠层和在发光器件内形成有波长转换材料的透明粘合剂层。

2. 发明授权

US08063557B2 Light-emitting device having wavelength-converting materials therewithin 有权
标题翻译：具有波长转换材料的发光器件
公开(公告)号：US08063557B2
公开(公告)日：2011-11-22
申请号：US11893220
申请日：2007-08-14
申请人： Min-Hsun Hsieh , Ta-Cheng Hsu , Ya-Ju Lee , Wei-Chih Peng , Chi-Wei Lu , Ya-Lan Yang , Ying-Yong Su , Meng-Lnn Tsai
发明人： Min-Hsun Hsieh , Ta-Cheng Hsu , Ya-Ju Lee , Wei-Chih Peng , Chi-Wei Lu , Ya-Lan Yang , Ying-Yong Su , Meng-Lnn Tsai
IPC分类号： H01J1/62
CPC分类号： H01L33/22 , H01L33/08 , H01L33/508
摘要： A light-emitting device comprising a substrate, a light-emitting stack, and a transparent adhesive layer having wavelength-converting materials embedded therein formed within the light-emitting device is provided.
摘要翻译：提供了一种发光器件，其包括衬底，发光叠层和在发光器件内形成有波长转换材料的透明粘合剂层。

3. 发明授权

US08164084B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08164084B2
公开(公告)日：2012-04-24
申请号：US12536252
申请日：2009-08-05
申请人： Chi-Wei Lu , Meng-Lun Tsai
发明人： Chi-Wei Lu , Meng-Lun Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/0079 , H01L33/14
摘要： A light-emitting device with a tunneling structure and a current spreading layer is disclosed. It includes an electrically conductive permanent substrate, an adhesive layer, an epitaxial structure, a tunneling structure and a current spreading layer. The adhesive layer is on the electrically conductive permanent substrate. The epitaxial structure on the adhesive layer at least comprises an upper cladding layer, an active layer, and a lower cladding layer. The tunneling structure on the epitaxial structure comprises a first conductivity type semiconductor layer with a first doping concentration and a second conductivity type semiconductor layer with a second doping concentration. The current spreading layer is on the tunneling structure.
摘要翻译：公开了一种具有隧道结构和电流扩散层的发光器件。它包括导电永久性基板，粘合剂层，外延结构，隧道结构和电流扩展层。粘合剂层在导电永久性基底上。粘合剂层上的外延结构至少包括上包层，有源层和下包层。外延结构上的隧道结构包括具有第一掺杂浓度的第一导电类型半导体层和具有第二掺杂浓度的第二导电类型半导体层。目前的扩散层在隧道结构上。

4. 发明申请

US20060081869A1 Flip-chip electrode light-emitting element formed by multilayer coatings 审中-公开
标题翻译：由多层涂层形成的倒装片电极发光元件
公开(公告)号：US20060081869A1
公开(公告)日：2006-04-20
申请号：US11242035
申请日：2005-10-04
申请人： Chi-Wei Lu , Wen-Chieh Huang , Pan-Tzu Chang , James Wang
发明人： Chi-Wei Lu , Wen-Chieh Huang , Pan-Tzu Chang , James Wang
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05124 , H01L2224/05139 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05184 , H01L2224/05568 , H01L2224/05573 , H01L2224/05611 , H01L2224/05644 , H01L2224/16 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/3025 , H01L2924/00014
摘要： A flip-chip electrode light-emitting element formed by multilayer coatings where a translucent conducting layer and a highly reflective metal layer acts as flip-chip electrode for enhancing the LED luminous efficiency. The flip-chip electrode light-emitting element includes a translucent substrate, a semiconductor die structure attached on the translucent substrate and made of group III nitride compounds, and an intermediate layer adapted to support the inverted semiconductor die structure on a submount. The flip-chip electrode formed by multiplayer coatings includes a current-spreading transparent conducting layer formed on a top side of the second type semiconductor layer, a highly reflective metal layer formed on a top side of the transparent conducting layer, a metallic diffusion barrier layer formed on a top side of the highly reflective metal layer, and a bonding layer electrically coupled to the intermediate layer and formed on a top side of the barrier layer. Moreover, an ohmic contact layer is formed on the transparent conducting layer. And a passivation layer encloses the die structure for insulating p/n interface and for avoiding the creation of the leakage current.
摘要翻译：由多层涂层形成的倒装芯片电极发光元件，其中半透明导电层和高反射金属层用作用于提高LED发光效率的倒装芯片电极。倒装芯片电极发光元件包括透光性基板，安装在透光性基板上的由III族氮化物化合物构成的半导体管芯结构，以及适于将反向半导体管芯结构支撑在基台上的中间层。由多层涂层形成的倒装芯片电极包括形成在第二类型半导体层的顶侧上的电流扩散透明导电层，形成在透明导电层的顶侧的高反射金属层，金属扩散阻挡层形成在所述高反射性金属层的上侧，以及与所述中间层电耦合并形成在所述阻挡层的顶侧上的接合层。此外，在透明导电层上形成欧姆接触层。并且钝化层包围用于绝缘p / n接口的管芯结构并且用于避免产生漏电流。

5. 发明授权

US08692227B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08692227B2
公开(公告)日：2014-04-08
申请号：US13427629
申请日：2012-03-22
申请人： Chi-Wei Lu , Meng-Lun Tsai
发明人： Chi-Wei Lu , Meng-Lun Tsai
IPC分类号： H01L33/40
CPC分类号： H01L33/04 , H01L33/0079 , H01L33/14
摘要： A light-emitting device is disclosed. The light-emitting device comprises an epitaxial structure comprising a lower cladding layer of first conductivity type, an active layer comprising InGaN or AlGaInN on the lower cladding layer, and an upper cladding layer of second conductivity type on the active layer; a tunneling structure on the epitaxial structure comprising a first tunneling layer of second conductivity type with a doping concentration greater than 6×1019/cm3 on the upper cladding layer, and a second tunneling layer of first conductivity type with a doping concentration greater than 6×1019/cm3 on the first tunneling layer; and a current spreading layer of first conductivity type comprising AlInN on the tunneling structure.
摘要翻译：公开了一种发光器件。发光装置包括外延结构，其包括第一导电类型的下包层，在下包层上包含InGaN或AlGaInN的有源层和在有源层上的第二导电类型的上包层; 所述外延结构上的隧道结构包括在上包层上具有大于6×1019 / cm3的掺杂浓度的第二导电类型的第一隧穿层，以及掺杂浓度大于6×10 6的第一导电类型的第二隧穿层在第一隧道层上为1019 / cm3; 以及在隧道结构上包括AlInN的第一导电类型的电流扩展层。

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