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1. 发明授权

US07577043B2 Voltage regulator for semiconductor memory 有权
标题翻译：用于半导体存储器的稳压器
公开(公告)号：US07577043B2
公开(公告)日：2009-08-18
申请号：US11953077
申请日：2007-12-10
申请人： Min-Chung Chou , Tse-Hua Yao
发明人： Min-Chung Chou , Tse-Hua Yao
IPC分类号： G11C16/04
CPC分类号： G11C5/147
摘要： A voltage regulator in a semiconductor memory has: a comparing unit including first and second bias current sources, for comparing an output voltage with first and second reference voltages under control of a first signal, the second bias current source being ON under control of a second signal; and a driver active element, coupled to the comparing unit, for outputting the output voltage. Before sensing operations, the output voltage is reset to the second reference voltage. During the sensing operations, the output voltage is maintained at the first reference voltage and the second signal is asserted for turning ON the second bias current source for raising speed of the comparing unit. After the sensing operations, the output voltage is reset to the second reference voltage.
摘要翻译：半导体存储器中的稳压器具有：包括第一和第二偏置电流源的比较单元，用于在第一信号的控制下将输出电压与第一和第二参考电压进行比较，第二偏置电流源在第二信号; 以及耦合到比较单元的用于输出输出电压的驱动器有源元件。在感测操作之前，输出电压被复位到第二个参考电压。在感测操作期间，输出电压保持在第一参考电压，并且第二信号被断言以接通第二偏置电流源以提高比较单元的速度。在感测操作之后，输出电压被复位到第二参考电压。

2. 发明申请

US20090147594A1 VOLTAGE REGULATOR FOR SEMICONDUCTOR MEMORY 有权
标题翻译：用于半导体存储器的电压调节器
公开(公告)号：US20090147594A1
公开(公告)日：2009-06-11
申请号：US11953077
申请日：2007-12-10
申请人： Min-Chung Chou , Tse-Hua Yao
发明人： Min-Chung Chou , Tse-Hua Yao
IPC分类号： G11C11/34 , G05F3/02
CPC分类号： G11C5/147
摘要： A voltage regulator in a semiconductor memory has: a comparing unit including first and second bias current sources, for comparing an output voltage with first and second reference voltages under control of a first signal, the second bias current source being ON under control of a second signal; and a driver active element, coupled to the comparing unit, for outputting the output voltage. Before sensing operations, the output voltage is reset to the second reference voltage. During the sensing operations, the output voltage is maintained at the first reference voltage and the second signal is asserted for turning ON the second bias current source for raising speed of the comparing unit. After the sensing operations, the output voltage is reset to the second reference voltage.
摘要翻译：半导体存储器中的稳压器具有：包括第一和第二偏置电流源的比较单元，用于在第一信号的控制下将输出电压与第一和第二参考电压进行比较，第二偏置电流源在第二信号; 以及耦合到比较单元的用于输出输出电压的驱动器有源元件。在感测操作之前，输出电压被复位到第二个参考电压。在感测操作期间，输出电压保持在第一参考电压，并且第二信号被断言以接通第二偏置电流源以提高比较单元的速度。在感测操作之后，输出电压被复位到第二参考电压。

3. 发明授权

US07432758B2 Voltage regulator for semiconductor memory 有权
标题翻译：用于半导体存储器的稳压器
公开(公告)号：US07432758B2
公开(公告)日：2008-10-07
申请号：US11557503
申请日：2006-11-08
申请人： Min-Chung Chou , Tse-Hua Yao
发明人： Min-Chung Chou , Tse-Hua Yao
IPC分类号： G05F3/02
CPC分类号： G05F1/56
摘要： A voltage regulator as a stable power supply to internal circuits in a semiconductor memory device is provided. This regulator includes a comparing unit, a first driver transistor, a feedback unit, an auxiliary control unit, a first switch, a second switch, and a second driver transistor. The comparing unit compares a reference voltage with a feedback signal to control the first driver transistor and maintain the internal power supply at a stable level. The second driver transistor, controlled by the first and second switches responsive to a trigger signal corresponding abrupt current consumptions and the auxiliary control unit responsive to the comparing result, supplies sufficient and appropriate current to the internal circuits and prevents the internal power supply from excessive overshoot and drop-out.
摘要翻译：提供了一种稳压器作为半导体存储器件内部电路的稳定电源。该调节器包括比较单元，第一驱动晶体管，反馈单元，辅助控制单元，第一开关，第二开关和第二驱动晶体管。比较单元将参考电压与反馈信号进行比较，以控制第一驱动晶体管并将内部电源维持在稳定的水平。响应于对应于突发电流消耗的触发信号由控制的第一和第二开关的第二驱动晶体管和响应于比较结果的辅助控制单元向内部电路提供足够和适当的电流并防止内部电源过度过冲和辍学。

4. 发明申请

US20080122415A1 VOLTAGE REGULATOR FOR SEMICONDUCTOR MEMORY 有权
标题翻译：用于半导体存储器的电压调节器
公开(公告)号：US20080122415A1
公开(公告)日：2008-05-29
申请号：US11557503
申请日：2006-11-08
申请人： Min-Chung Chou , Tse-Hua Yao
发明人： Min-Chung Chou , Tse-Hua Yao
IPC分类号： G05F1/44 , G05F1/02
CPC分类号： G05F1/56
摘要： A voltage regulator as a stable power supply to internal circuits in a semiconductor memory device is provided. This regulator includes a comparing unit, a first driver transistor, a feedback unit, an auxiliary control unit, a first switch, a second switch, and a second driver transistor. The comparing unit compares a reference voltage with a feedback signal to control the first driver transistor and maintain the internal power supply at a stable level. The second driver transistor, controlled by the first and second switches responsive to a trigger signal corresponding abrupt current consumptions and the auxiliary control unit responsive to the comparing result, supplies sufficient and appropriate current to the internal circuits and prevents the internal power supply from excessive overshoot and drop-out.
摘要翻译：提供了一种稳压器作为半导体存储器件内部电路的稳定电源。该调节器包括比较单元，第一驱动晶体管，反馈单元，辅助控制单元，第一开关，第二开关和第二驱动晶体管。比较单元将参考电压与反馈信号进行比较，以控制第一驱动晶体管并将内部电源维持在稳定的水平。响应于对应于突发电流消耗的触发信号由控制的第一和第二开关的第二驱动晶体管和响应于比较结果的辅助控制单元向内部电路提供足够和适当的电流并防止内部电源过度过冲和辍学。

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