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1. 发明授权

US09857621B1 Display device 失效
公开(公告)号：US09857621B1
公开(公告)日：2018-01-02
申请号：US08889732
申请日：1997-07-08
申请人： Dong-Hyo Gu , Min-Cheol Shin
发明人： Dong-Hyo Gu , Min-Cheol Shin
IPC分类号： G02F1/1335 , G02B3/00
CPC分类号： G02F1/133526 , G02B3/0056 , G02F1/133512 , G02F1/133621
摘要： A liquid crystal display with a high transmittance and a low power consumption rate, includes first and second transmittable substrates, a plurality of gate and data bus lines formed on the first substrate, a plurality of color filters formed on the second substrate, and a plurality of microlenses formed on the first or second substrate corresponding to the gate and data bus lines. The microlenses are formed at positions corresponding to the gate and data bus lines which block incident lights, so that most incident lights can be transmitted. Further, the transmittance can be greatly improved by forming the microlenses at the positions corresponding to storage capacitor lines as well as the gate and data bus lines.

2. 发明授权

US5872372A Thin film transistor with piezoelectric film 失效
标题翻译：具有压电薄膜的薄膜晶体管
公开(公告)号：US5872372A
公开(公告)日：1999-02-16
申请号：US712410
申请日：1996-09-11
申请人： Seong-Jae Lee , Kyoung-Wan Park , Min-Cheol Shin
发明人： Seong-Jae Lee , Kyoung-Wan Park , Min-Cheol Shin
IPC分类号： H01L41/107 , H01L29/786 , H01L29/84 , H01L41/08 , H01L29/82
CPC分类号： H01L29/7849 , H01L29/84 , H01L29/78 , H01L29/786
摘要： A thin film transistor is disclosed comprising a piezoelectric film formed on a piezoresistive body of an ultra thin film and a gate electrode formed on the piezoelectric film. Due to the force generated from the piezoelectric film by an electric field generated according to the strength of a voltage applied to the gate electrode, a pressure is applied on the piezoresistive body to vary the resistance of the piezoresistive body. Thus, the quantity of current that flows from a source terminal through the piezoresistive channel to a drain terminal can be controlled. Since the piezoresistive body can be formed on a plane, a thin film transistor with a three-dimensional structure can be manufactured.
摘要翻译：公开了一种薄膜晶体管，其包括形成在超薄膜的压阻体上的压电膜和形成在压电膜上的栅电极。由于通过根据施加到栅电极的电压的强度而产生的电场由压电膜产生的力，对压阻体施加压力以改变压阻体的电阻。因此，可以控制从源极端子通过压阻通道流向漏极端子的电流量。由于可以在平面上形成压阻体，因此可以制造具有三维结构的薄膜晶体管。

3. 发明授权

US06307531B1 Liquid crystal display having driving integrated circuits in a single bank 有权
标题翻译：液晶显示器具有在单个存储体中的驱动集成电路
公开(公告)号：US06307531B1
公开(公告)日：2001-10-23
申请号：US09134083
申请日：1998-08-14
申请人： Min-Cheol Shin
发明人： Min-Cheol Shin
IPC分类号： G09G336
CPC分类号： G09G3/3611 , G09G3/3685
摘要： A liquid crystal display apparatus having driving integrated circuits arranged in a single bank form that is adapted to respond to video data for double bank while enlarging the effective display area thereof. The driving integrated circuits are arranged in parallel in one region of a liquid crystal panel to drive the pixels contained in a pixel matrix in the liquid crystal panel. Also, the driving integrated circuits divisionally drive pixels for one line in a predetermined number of pixel units arranged successively with the video data having odd-numbered pixel data and even-numbered pixel data sequentially rearranged.
摘要翻译：一种具有驱动集成电路的液晶显示装置，该驱动集成电路以单组格式布置，适于响应双组分的视频数据，同时扩大其有效显示区域。驱动集成电路平行布置在液晶面板的一个区域中，以驱动包含在液晶面板中的像素矩阵中的像素。此外，驱动用集成电路将具有奇数像素数据和偶数像素数据的视频数据依次重排的预定数量的像素单位中的一行驱动像素。

4. 发明授权

US5883419A Ultra-thin MO-C film transistor 失效
标题翻译：超薄MO-C薄膜晶体管
公开(公告)号：US5883419A
公开(公告)日：1999-03-16
申请号：US850013
申请日：1997-05-01
申请人： Seong-Jae Lee , Kyoung-Wan Park , Min-Cheol Shin
发明人： Seong-Jae Lee , Kyoung-Wan Park , Min-Cheol Shin
IPC分类号： H01L41/00 , H01L45/00 , B02J17/40 , B05D3/06
CPC分类号： H01L45/00
摘要： A transistor in accordance with the invention comprises an ultra-thin Mo--C film functioning as a channel for an electron flow with two ends of the thin metal film functioning as source and drain terminals of the transistor, respectively; a piezoelectric film formed on the Mo--C film, for producing a force in accordance with an applied electric field provided by a gate voltage; and an electrode film formed on the piezoelectric film functioning as a gate of the transistor to which the gate voltage is applied to produce the applied electric field; and wherein a resistance of the Mo--C film between the source and drain terminals changes in accordance with the force produced in response to the applied gate voltage. This transistor can be used as an element of the three dimensional integrated circuit with a laminated structure.
摘要翻译：根据本发明的晶体管包括用作电子流的通道的超薄Mo-C膜，其中薄金属膜的两端分别用作晶体管的源极和漏极端子; 形成在Mo-C膜上的压电膜，用于根据由栅极电压提供的施加的电场产生力; 以及形成在作为施加栅极电压的晶体管的栅极的压电膜上产生施加的电场的电极膜; 并且其中源极和漏极端子之间的Mo-C膜的电阻根据施加的栅极电压产生的力而改变。该晶体管可以用作具有层叠结构的三维集成电路的元件。

5. 发明授权

US5760675A Piezoresistive device and fabrication method thereof 失效
标题翻译：压阻器及其制造方法
公开(公告)号：US5760675A
公开(公告)日：1998-06-02
申请号：US716550
申请日：1996-09-19
申请人： Seong-Jae Lee , Kyoung-Wan Park , Min-Cheol Shin
发明人： Seong-Jae Lee , Kyoung-Wan Park , Min-Cheol Shin
IPC分类号： G01L1/18 , G01L1/22 , H01L29/84 , H01L41/00
CPC分类号： G01L1/2293
摘要： Disclosed is the method of producing a piezo-device utilizing an ultra-thin Mo-C film as a piezoresistive material for a general class of improved piezo-device with the high sensitivity and the weak temperature dependence.
摘要翻译：公开了利用超薄Mo-C膜作为压敏电阻材料的压电器件的制造方法，该压电器件具有高灵敏度和弱温度依赖性的一类改进的压电器件。

6. 发明授权

US06226062B1 Liquid crystal display with microlenses 失效
公开(公告)号：US06226062B1
公开(公告)日：2001-05-01
申请号：US08889732
申请日：1997-07-08
申请人： Dong-Hyo Gu , Min-Cheol Shin
发明人： Dong-Hyo Gu , Min-Cheol Shin
IPC分类号： G02F11335
摘要： A liquid crystal display with a high transmittance and a low power consumption rate, includes first and second transmittable substrates, a plurality of gate and data bus lines formed on the first substrate, a plurality of color filters formed on the second substrate, and a plurality of microlenses formed on the first or second substrate corresponding to the gate and data bus lines. The microlenses are formed at positions corresponding to the gate and data bus lines which block incident lights, so that most incident lights can be transmitted. Further, the transmittance can be greatly improved by forming the microlenses at the positions corresponding to storage capacitor lines as well as the gate and data bus lines.

7. 发明授权

US5880484A Lateral resonant tunneling transistor having two non-symmetric quantum dots 失效
标题翻译：具有两个非对称量子点的横向谐振隧穿晶体管
公开(公告)号：US5880484A
公开(公告)日：1999-03-09
申请号：US706238
申请日：1996-09-04
申请人： Kyoung-Wan Park , Seong-Jae Lee , Min-Cheol Shin
发明人： Kyoung-Wan Park , Seong-Jae Lee , Min-Cheol Shin
IPC分类号： H01L29/68 , H01L21/334 , H01L29/06 , H01L29/12 , H01L29/205 , H01L29/66 , H01L29/772 , H01L29/778 , H01L29/80
CPC分类号： B82Y10/00 , H01L29/127 , H01L29/66939 , H01L29/772 , H01L29/7786
摘要： A lateral resonant tunneling transistor having two non-symmetric quantum dots is disclosed. When a negative voltage is supplied to each plurality of thin split gates, two non-symmetric quantum dots are formed owing to the formation of the potential barrier. Thus when a forward bias voltage is applied, the resonant tunneling phenomena occur twice successively. Through these two successive resonant tunneling phenomena and by lowering the height of the third potential barrier 6a, the resonant tunneling current can be maximized.
摘要翻译：公开了具有两个非对称量子点的横向谐振隧穿晶体管。当向每个多个薄分割栅极提供负电压时，由于形成势垒而形成两个非对称量子点。因此，当施加正向偏置电压时，谐振隧道现象连续发生两次。通过这两个连续的谐振隧道现象，并且通过降低第三势垒6a的高度，可以使谐振隧穿电流最大化。

8. 发明授权

US5519232A Quantum interference device 失效
标题翻译：量子干扰装置
公开(公告)号：US5519232A
公开(公告)日：1996-05-21
申请号：US352046
申请日：1994-11-30
申请人： Kyoung-Wan Park , Seong-Jae Lee , Min-Cheol Shin
发明人： Kyoung-Wan Park , Seong-Jae Lee , Min-Cheol Shin
IPC分类号： H01L29/68 , H01L21/338 , H01L29/205 , H01L29/66 , H01L29/778 , H01L29/80 , H01L29/812 , H01L31/0328 , H01L31/0336
CPC分类号： B82Y10/00 , H01L29/66977
摘要： A quantum interference device comprises a semi-insulating GaAs substrate; GaAs and AlGaAs layers sequentially formed with high purity on the substrate; a two-dimensional electron gas layer formed in the GaAs layer and serving as a channel; source/drain regions formed on the semi-insulating GaAs substrate and at both ends of a laminated portion composed of the GaAs/AlGaAs layers; and a gate formed on the AlGaAs layer and having a periodic structure wherein the length thereof varies in a periodic manner in a transverse direction. In the device, the electron gas layer formed in the GaAs layer is used as an electron path, and the phases of electrons passing along different electron paths are caused to interfere with each other by the gate, thereby causing the current of a drain therein to be maximized or minimized. The transconductance can be significantly increased.
摘要翻译：量子干涉装置包括半绝缘GaAs衬底; 在衬底上依次形成高纯度的GaAs和AlGaAs层; 形成在GaAs层中并用作沟道的二维电子气层; 在半绝缘GaAs衬底上形成的源极/漏极区域和由GaAs / AlGaAs层构成的层叠部分的两端; 以及形成在AlGaAs层上并且具有周期性结构的栅极，其中其长度在横向上以周期性方式变化。在该器件中，使用形成在GaAs层中的电子气层作为电子通路，使通过不同的电子路径的电子相被栅极相互干扰，从而使其中的漏极的电流最大化或最小化。跨导可以显着增加。

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