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1. 发明授权

US08930436B2 Apparatus and method of dynamically distributing load in multiple cores 有权
标题翻译：在多个核心中动态分配负载的装置和方法
公开(公告)号：US08930436B2
公开(公告)日：2015-01-06
申请号：US12923758
申请日：2010-10-06
申请人： Min Soo Kim , Shi Hwa Lee , Do Hyung Kim , Joon Ho Song , Sang Jo Lee , Won Chang Lee , Doo Hyun Kim
发明人： Min Soo Kim , Shi Hwa Lee , Do Hyung Kim , Joon Ho Song , Sang Jo Lee , Won Chang Lee , Doo Hyun Kim
IPC分类号： G06F15/16 , G06F9/50
CPC分类号： G06F9/505 , G05B2219/33334 , G06F9/5033 , G06F2206/1012 , G06F2206/1508 , G06F2209/5021
摘要： Provided is an apparatus and method of dynamically distributing load occurring in multiple cores that may determine a corresponding core to perform functions constituting an application program, thereby enhancing the entire processing rate.
摘要翻译：提供了一种动态地分配发生在多个核中的负载的装置和方法，其可以确定相应的核以执行构成应用程序的功能，从而提高整个处理速率。

2. 发明申请

US20110247006A1 Apparatus and method of dynamically distributing load in multiple cores 有权
标题翻译：在多个核心中动态分配负载的装置和方法
公开(公告)号：US20110247006A1
公开(公告)日：2011-10-06
申请号：US12923758
申请日：2010-10-06
申请人： Min Soo Kim , Shi Hwa Lee , Do Hyung Kim , Joon Ho Song , Sang Jo Lee , Won Chang Lee , Doo Hyun Kim
发明人： Min Soo Kim , Shi Hwa Lee , Do Hyung Kim , Joon Ho Song , Sang Jo Lee , Won Chang Lee , Doo Hyun Kim
IPC分类号： G06F9/46
CPC分类号： G06F9/505 , G05B2219/33334 , G06F9/5033 , G06F2206/1012 , G06F2206/1508 , G06F2209/5021
摘要： Provided is an apparatus and method of dynamically distributing load occurring in multiple cores that may determine a corresponding core to perform functions constituting an application program, thereby enhancing the entire processing rate.
摘要翻译：提供了一种动态地分配发生在多个核中的负载的装置和方法，其可以确定相应的核以执行构成应用程序的功能，从而提高整个处理速率。

3. 发明授权

US08948528B2 Method and apparatus for restoring image by copying memory 有权
标题翻译：通过复制存储器恢复图像的方法和装置
公开(公告)号：US08948528B2
公开(公告)日：2015-02-03
申请号：US13605432
申请日：2012-09-06
申请人： Jin Soo Cho , Gi Ho Park , Won Chang Lee , Shi Hwa Lee , Do Hyung Kim , Joon Ho Song
发明人： Jin Soo Cho , Gi Ho Park , Won Chang Lee , Shi Hwa Lee , Do Hyung Kim , Joon Ho Song
IPC分类号： G06K9/46 , G06K9/36 , G06K9/40 , H04N7/01 , G06T7/20
CPC分类号： H04N7/0137 , G06T7/223 , G06T2207/10016 , G06T2207/20224
摘要： A method and apparatus for restoring an image by copying a memory may include determining whether to perform an interpolation operation based on block information, and restoring a current image using a reference image depending on whether to perform the interpolation operation.
摘要翻译：通过复制存储器来恢复图像的方法和装置可以包括基于块信息确定是否执行插值操作，以及根据是否执行插值操作使用参考图像来恢复当前图像。

4. 发明申请

US20130064463A1 METHOD AND APPARATUS FOR RESTORING IMAGE BY COPYING MEMORY 有权
标题翻译：通过复制记忆恢复图像的方法和装置
公开(公告)号：US20130064463A1
公开(公告)日：2013-03-14
申请号：US13605432
申请日：2012-09-06
申请人： Jin Soo Cho , Gi Ho Park , Won Chang Lee , Shi Hwa Lee , Do Hyung Kim , Joon Ho Song
发明人： Jin Soo Cho , Gi Ho Park , Won Chang Lee , Shi Hwa Lee , Do Hyung Kim , Joon Ho Song
IPC分类号： G06K9/40 , G06K9/36
CPC分类号： H04N7/0137 , G06T7/223 , G06T2207/10016 , G06T2207/20224
摘要： A method and apparatus for restoring an image by copying a memory may include determining whether to perform an interpolation operation based on block information, and restoring a current image using a reference image depending on whether to perform the interpolation operation.
摘要翻译：通过复制存储器来恢复图像的方法和装置可以包括基于块信息确定是否执行插值操作，以及根据是否执行插值操作使用参考图像来恢复当前图像。

5. 发明授权

US08937624B2 Method and apparatus for translating memory access address 有权
标题翻译：用于翻译存储器访问地址的方法和装置
公开(公告)号：US08937624B2
公开(公告)日：2015-01-20
申请号：US13297492
申请日：2011-11-16
申请人： Gi Ho Park , Won Chang Lee , Shi Hwa Lee , Do Hyung Kim , Joon Ho Song , Sung Uk Jeong
发明人： Gi Ho Park , Won Chang Lee , Shi Hwa Lee , Do Hyung Kim , Joon Ho Song , Sung Uk Jeong
IPC分类号： G06F12/06 , G06F12/00 , G09G5/37 , G09G5/399 , G06F13/28 , G09G5/39 , G11C8/00 , G06F12/02
CPC分类号： G06F12/0607 , G06F12/0207 , G06F2212/1024
摘要： A memory access address translating apparatus and method may each classify pixels included in an input image into a plurality of tiles, and may generate a new memory for each of the successive tiles to enable the successive tiles, among a plurality of tiles, to be stored in different banks.
摘要翻译：存储器访问地址转换装置和方法可以将输入图像中包括的像素分类为多个瓦片，并且可以为每个连续瓦片生成新的存储器，以使多个瓦片中的连续瓦片能够被存储在不同的银行。

6. 发明授权

US09020286B2 Apparatus for dividing image data and encoding and decoding image data in parallel, and operating method of the same 有权
标题翻译：用于分割图像数据并并行编码和解码图像数据的装置及其操作方法
公开(公告)号：US09020286B2
公开(公告)日：2015-04-28
申请号：US13067987
申请日：2011-07-13
申请人： Won Chang Lee , Joon Ho Song , Sang Jo Lee
发明人： Won Chang Lee , Joon Ho Song , Sang Jo Lee
IPC分类号： G06K9/36 , G06K9/46 , H04N19/436 , H04N19/119 , H04N19/593 , H04N19/156 , H04N19/174
CPC分类号： H04N19/436 , H04N19/119 , H04N19/156 , H04N19/174 , H04N19/593
摘要： An apparatus and a method for dividing image data into partition slices and encoding and decoding the image data based on a correlation between macroblocks are provided. The macroblocks may be decoded in parallel and thus, it is possible to improve an overall image quality and processing speed.
摘要翻译：提供了一种用于将图像数据划分成分割片并基于宏块之间的相关性对图像数据进行编码和解码的装置和方法。可以并行解码宏块，从而可以提高整体图像质量和处理速度。

7. 发明申请

US20120027314A1 Apparatus for dividing image data and encoding and decoding image data in parallel, and operating method of the same 有权
标题翻译：用于分割图像数据并并行编码和解码图像数据的装置及其操作方法
公开(公告)号：US20120027314A1
公开(公告)日：2012-02-02
申请号：US13067987
申请日：2011-07-13
申请人： Won Chang Lee , Joon Ho Song , Sang Jo Lee
发明人： Won Chang Lee , Joon Ho Song , Sang Jo Lee
IPC分类号： G06K9/36
CPC分类号： H04N19/436 , H04N19/119 , H04N19/156 , H04N19/174 , H04N19/593
摘要： An apparatus and a method for dividing image data into partition slices and encoding and decoding the image data based on a correlation between macroblocks are provided. The macroblocks may be decoded in parallel and thus, it is possible to improve an overall image quality and processing speed.
摘要翻译：提供了一种用于将图像数据划分成分割片并基于宏块之间的相关性对图像数据进行编码和解码的装置和方法。可以并行解码宏块，从而可以提高整体图像质量和处理速度。

8. 发明授权

US06787426B2 Method for forming word line of semiconductor device 有权
标题翻译：半导体器件字线形成方法
公开(公告)号：US06787426B2
公开(公告)日：2004-09-07
申请号：US10603611
申请日：2003-06-26
申请人： Won Chang Lee
发明人： Won Chang Lee
IPC分类号： H01L21336
CPC分类号： H01L29/66545 , H01L21/76801
摘要： A method for forming word line of semiconductor device wherein a lower portion of the word line on the channel region is a I-type and a upper portion of the word line is a line-type is disclosed. The method comprises (a) forming a sacrificial insulation film on a semiconductor substrate including an active region; (b) etching the sacrificial insulation film to form an I-type sacrificial insulation film pattern whereon a channel region is to be formed; (c) forming a source/drain region; (d) forming a first interlayer insulation film; (e) planarizing the first interlayer insulation film to expose the sacrificial insulation film pattern; (f) sequentially forming a insulation film and a second interlayer insulation film; (g) etching the second interlayer insulation film and insulation film using a word line mask; (h) removing the sacrificial insulation film pattern; (i) growing a gate oxide film; (j) forming a conductive layer; and (k) planarizing the conductive layer.
摘要翻译：一种用于形成半导体器件的字线的方法，其中沟道区上的字线的下部是I型，并且字线的上部是线型。该方法包括：（a）在包括有源区的半导体衬底上形成牺牲绝缘膜; （b）蚀刻牺牲绝缘膜以形成其中将形成沟道区的I型牺牲绝缘膜图案; （c）形成源/漏区; （d）形成第一层间绝缘膜; （e）平面化所述第一层间绝缘膜以暴露所述牺牲绝缘膜图案; （f）依次形成绝缘膜和第二层间绝缘膜; （g）使用字线掩模蚀刻第二层间绝缘膜和绝缘膜; （h）去除牺牲绝缘膜图案; （i）生长栅氧化膜; （j）形成导电层; 和（k）平坦化导电层。

9. 发明授权

US07393767B2 Method for implanting a cell channel ion of semiconductor device 失效
标题翻译：用于植入半导体器件的细胞通道离子的方法
公开(公告)号：US07393767B2
公开(公告)日：2008-07-01
申请号：US11004835
申请日：2004-12-07
申请人： Won Chang Lee , Woo Kyung Sun
发明人： Won Chang Lee , Woo Kyung Sun
IPC分类号： H01L21/425
CPC分类号： H01L21/26513 , H01L27/10855 , H01L27/10888
摘要： A method for implanting a cell channel ion of semiconductor device is disclosed. In accordance with the method, the bit line contact region and the edge portion of the channel region adjacent to the bit line contact region in the cell region are subjected to a selective cell channel implant process two times using a ion implant mask and rest of the cell region is subjected to cell channel implant process only once so that a impurity concentration of the storage node contact region is maintained at a lower level for minimal leakage current in the storage node contact region.
摘要翻译：公开了一种用于注入半导体器件的单元通道离子的方法。根据该方法，使用离子注入掩模将位线接触区域和与单元区域中的位线接触区域相邻的沟道区域的边缘部分进行两次选择性单元通道注入工艺，其余部分细胞区域仅进行细胞通道注入过程一次，使得存储节点接触区域的杂质浓度维持在较低水平，以在存储节点接触区域中最小的泄漏电流。

10. 发明授权

US06479865B1 SOI device and method of fabricating the same 失效
标题翻译： SOI器件及其制造方法
公开(公告)号：US06479865B1
公开(公告)日：2002-11-12
申请号：US09595107
申请日：2000-06-16
申请人： Won Chang Lee , Woo Han Lee
发明人： Won Chang Lee , Woo Han Lee
IPC分类号： H01L2701
CPC分类号： H01L29/66772 , H01L29/78609
摘要： Disclosed are an SOI device having no edge leakage current and a method of fabricating the same. The SOI device comprises: an SOI substrate of a stack structure of a base substrate, a buried oxide layer and a semiconductor layer; an oxide layer formed to be in contact with the buried oxide layer at the semiconductor layer portion corresponding to a field region so that an active region is defined; a gate electrode pattern having a gate oxide layer, the gate oxide layer only formed on the active region; a source region and a drain region formed inside the active region of the semiconductor layer of both sides of the gate electrode pattern; and a gate electrode line formed on the gate electrode pattern and on the field region so as to interconnect the gate electrode patterns of the respective active regions arranged in a line.
摘要翻译：公开了没有边缘漏电流的SOI器件及其制造方法。 SOI器件包括：基底衬底，掩埋氧化物层和半导体层的堆叠结构的SOI衬底; 形成为与所述半导体层部分处的与所述掩埋氧化物层接触的氧化物层，所述半导体层部分对应于场区域，从而限定有源区域; 具有栅极氧化层的栅极电极图案，仅在活性区域上形成栅极氧化物层; 源极区和漏极区，形成在栅电极图案的两侧的半导体层的有源区内; 以及形成在栅电极图案和场区上的栅极电极线，以使布置成一行的各个有源区的栅电极图案互连。

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