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1. 发明授权

US08174635B2 Method of manufacturing a liquid crystal display having top gate thin film transistors wherein each gate electrode contacts an auxilliary electrode 有权
标题翻译：制造具有顶栅极薄膜晶体管的液晶显示器的方法，其中每个栅电极接触辅助电极
公开(公告)号：US08174635B2
公开(公告)日：2012-05-08
申请号：US13166455
申请日：2011-06-22
申请人： Min Joo Kim , Ho Cheol Kang , Kyo Seop Choo
发明人： Min Joo Kim , Ho Cheol Kang , Kyo Seop Choo
IPC分类号： G02F1/136 , G02F1/13 , H01L51/40
CPC分类号： G02F1/136204 , G02F2001/13685 , G02F2202/02 , H01L27/0248
摘要： An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.
摘要翻译：静电放电保护元件，具有该静电放电保护元件的液晶显示器件及其制造方法。第一ESD有机TFT，第二ESD有机TFT，第三ESD有机TFT各自具有栅电极，源电极和漏电极，其中第一和第二ESD有机TFT的源电极和漏电极以及栅电极的第三ESD有机TFT电连接。第一ESD有机TFT的栅电极和源电极电连接到第一阵列线，并且第二ESD有机TFT的栅电极和漏极电连接到第二阵列线。第三ESD有机TFT的源电极电连接到数据线或栅极线，并且第三ESD有机TFT的漏极电连接到公共电压线。

2. 发明申请

US20110249208A1 METHOD OF MANUFACTURING A LIQUID CRYSTAL DISPLAY HAVING TOP GATE THIN FILM TRANSISTORS WHEREIN EACH GATE ELECTRODE CONTACTS AN AUXILLIARY ELECTRODE 有权
标题翻译：制造具有每个门电极的顶盖薄膜晶体管的液晶显示方法联系辅助电极
公开(公告)号：US20110249208A1
公开(公告)日：2011-10-13
申请号：US13166455
申请日：2011-06-22
申请人： Min Joo Kim , Ho Cheol Kang , Kyo Seop Choo
发明人： Min Joo Kim , Ho Cheol Kang , Kyo Seop Choo
IPC分类号： G02F1/1333
CPC分类号： G02F1/136204 , G02F2001/13685 , G02F2202/02 , H01L27/0248
摘要： An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.
摘要翻译：静电放电保护元件，具有该静电放电保护元件的液晶显示器件及其制造方法。第一ESD有机TFT，第二ESD有机TFT，第三ESD有机TFT各自具有栅电极，源电极和漏电极，其中第一和第二ESD有机TFT的源电极和漏电极以及栅电极的第三ESD有机TFT电连接。第一ESD有机TFT的栅电极和源电极电连接到第一阵列线，并且第二ESD有机TFT的栅电极和漏极电连接到第二阵列线。第三ESD有机TFT的源电极电连接到数据线或栅极线，并且第三ESD有机TFT的漏极电连接到公共电压线。

3. 发明申请

US20080136986A1 Electrostatic discharge protection element, liquid crystal display device having the same, and manufacturing method thereof 有权
标题翻译：静电放电保护元件，具有该静电放电保护元件的液晶显示器件及其制造方法
公开(公告)号：US20080136986A1
公开(公告)日：2008-06-12
申请号：US11823200
申请日：2007-06-26
申请人： Min Joo Kim , Ho Cheol Kang , Kyo Seop Choo
发明人： Min Joo Kim , Ho Cheol Kang , Kyo Seop Choo
IPC分类号： G02F1/1333 , H01L27/13
CPC分类号： G02F1/136204 , G02F2001/13685 , G02F2202/02 , H01L27/0248
摘要： An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.
摘要翻译：静电放电保护元件，具有该静电放电保护元件的液晶显示器件及其制造方法。第一ESD有机TFT，第二ESD有机TFT，第三ESD有机TFT各自具有栅电极，源电极和漏电极，其中第一和第二ESD有机TFT的源电极和漏电极以及栅电极的第三ESD有机TFT电连接。第一ESD有机TFT的栅电极和源电极电连接到第一阵列线，并且第二ESD有机TFT的栅电极和漏极电连接到第二阵列线。第三ESD有机TFT的源电极电连接到数据线或栅极线，并且第三ESD有机TFT的漏极电连接到公共电压线。

4. 发明申请

US20110069265A1 ELECTROSTATIC DISCHARGE PROTECTION ELEMENT, LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME, AND MANUFACTURING METHOD THEREOF 有权
标题翻译：静电放电保护元件，具有其的液晶显示装置及其制造方法
公开(公告)号：US20110069265A1
公开(公告)日：2011-03-24
申请号：US12958860
申请日：2010-12-02
申请人： Min Joo Kim , Ho Cheol Kang , Kyo Seop Choo
发明人： Min Joo Kim , Ho Cheol Kang , Kyo Seop Choo
IPC分类号： G02F1/1333 , H01L51/56
CPC分类号： G02F1/136204 , G02F2001/13685 , G02F2202/02 , H01L27/0248
摘要： An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.
摘要翻译：静电放电保护元件，具有该静电放电保护元件的液晶显示器件及其制造方法。第一ESD有机TFT，第二ESD有机TFT，第三ESD有机TFT各自具有栅电极，源电极和漏电极，其中第一和第二ESD有机TFT的源电极和漏电极以及栅电极的第三ESD有机TFT电连接。第一ESD有机TFT的栅电极和源电极电连接到第一阵列线，并且第二ESD有机TFT的栅电极和漏极电连接到第二阵列线。第三ESD有机TFT的源电极电连接到数据线或栅极线，并且第三ESD有机TFT的漏极电连接到公共电压线。

5. 发明授权

US07986382B2 Method of manufacturing a liquid crystal display having top gate thin film transistors wherein each gate electrode contacts an auxiliary electrode 有权
标题翻译：制造具有顶栅极薄膜晶体管的液晶显示器的方法，其中每个栅电极接触辅助电极
公开(公告)号：US07986382B2
公开(公告)日：2011-07-26
申请号：US12958860
申请日：2010-12-02
申请人： Min Joo Kim , Ho Cheol Kang , Kyo Seop Choo
发明人： Min Joo Kim , Ho Cheol Kang , Kyo Seop Choo
IPC分类号： G02F1/136 , G02F1/13 , H01L51/40
CPC分类号： G02F1/136204 , G02F2001/13685 , G02F2202/02 , H01L27/0248
摘要： An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.
摘要翻译：静电放电保护元件，具有该静电放电保护元件的液晶显示器件及其制造方法。第一ESD有机TFT，第二ESD有机TFT，第三ESD有机TFT各自具有栅电极，源电极和漏电极，其中第一和第二ESD有机TFT的源电极和漏电极以及栅电极的第三ESD有机TFT电连接。第一ESD有机TFT的栅电极和源电极电连接到第一阵列线，并且第二ESD有机TFT的栅电极和漏极电连接到第二阵列线。第三ESD有机TFT的源电极电连接到数据线或栅极线，并且第三ESD有机TFT的漏极电连接到公共电压线。

6. 发明授权

US07864254B2 Electrostatic discharge protection element comprising top gate thin film transistors with an auxiliary electrode between an organic insulating layer and a gate electrode 有权
标题翻译：静电放电保护元件包括具有在有机绝缘层和栅电极之间的辅助电极的顶栅极薄膜晶体管
公开(公告)号：US07864254B2
公开(公告)日：2011-01-04
申请号：US11823200
申请日：2007-06-26
申请人： Min Joo Kim , Ho Cheol Kang , Kyo Seop Choo
发明人： Min Joo Kim , Ho Cheol Kang , Kyo Seop Choo
IPC分类号： G02F1/1333 , G02F1/136 , H01L35/24 , H01L27/12
CPC分类号： G02F1/136204 , G02F2001/13685 , G02F2202/02 , H01L27/0248
摘要： An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.
摘要翻译：静电放电保护元件，具有该静电放电保护元件的液晶显示器件及其制造方法。第一ESD有机TFT，第二ESD有机TFT，第三ESD有机TFT各自具有栅电极，源电极和漏电极，其中第一和第二ESD有机TFT的源电极和漏电极以及栅电极的第三ESD有机TFT电连接。第一ESD有机TFT的栅电极和源电极电连接到第一阵列线，并且第二ESD有机TFT的栅电极和漏极电连接到第二阵列线。第三ESD有机TFT的源电极电连接到数据线或栅极线，并且第三ESD有机TFT的漏极电连接到公共电压线。

7. 发明申请

US20100276679A1 ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE ORGANIC THIN FILM TRANSISTOR, AND DISPLAY APPARATUS USING THE SAME 有权
标题翻译：有机薄膜晶体管及制造有机薄膜晶体管的方法及使用其的显示装置
公开(公告)号：US20100276679A1
公开(公告)日：2010-11-04
申请号：US12827612
申请日：2010-06-30
申请人： Nack Bong Choi , Min Joo Kim
发明人： Nack Bong Choi , Min Joo Kim
IPC分类号： H01L51/00 , H01L33/00
CPC分类号： H01L51/0541 , G02F1/1368 , H01L51/102
摘要： Provided are an organic semiconductor structure and a method of manufacturing the same, an organic thin film transistor (OTFT) using the organic semiconductor structure and a method of manufacturing the OTFT, and a display apparatus using the same. The OTFT includes: an oxide layer formed on a base substrate; a source electrode on the oxide layer, wherein the source electrode includes a first source electrode portion and a second source electrode portion; a drain electrode on the oxide layer, wherein the drain electrode includes a first drain electrode portion and a second drain electrode portion; an organic layer pattern having an opening that exposes the first source electrode portion and the first drain electrode portion; an organic semiconductor pattern electrically connected to the first source electrode portion and the first drain electrode portion through the opening, wherein the organic semiconductor pattern has a conductive or an insulating property depending on an applied electric field in a location; a gate insulating layer covering the organic semiconductor pattern; and a gate electrode formed on the gate insulating layer corresponding to the organic semiconductor pattern.
摘要翻译：提供一种有机半导体结构及其制造方法，使用有机半导体结构的有机薄膜晶体管（OTFT）和制造OTFT的方法以及使用其的显示装置。 OTFT包括：形成在基底基板上的氧化物层; 在所述氧化物层上的源电极，其中所述源电极包括第一源电极部分和第二源电极部分; 在所述氧化物层上的漏电极，其中所述漏电极包括第一漏电极部分和第二漏电极部分; 有机层图案，具有露出第一源电极部分和第一漏电极部分的开口; 通过所述开口与所述第一源电极部分和所述第一漏电极部分电连接的有机半导体图案，其中所述有机半导体图案具有取决于所施加的电场的导电或绝缘性能; 覆盖有机半导体图案的栅极绝缘层; 以及形成在对应于有机半导体图案的栅绝缘层上的栅电极。

8. 发明授权

US07817238B2 Liquid crystal display device and method of manufacturing the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07817238B2
公开(公告)日：2010-10-19
申请号：US11377862
申请日：2006-03-17
申请人： Myoung Ho Lee , Min Joo Kim
发明人： Myoung Ho Lee , Min Joo Kim
IPC分类号： G02F1/1339 , G02F1/13
CPC分类号： G02F1/13394 , G02F1/133711
摘要： A liquid crystal display (LCD) device and a method of manufacturing the same is disclosed, to improve the picture quality by preventing the movement of ball spacers from a non-pixel area to a pixel area, in which the method includes preparing a substrate including a pixel area and a non-pixel area; forming a well in a predetermined portion of the non-pixel area wherein forming the well includes coating an alignment layer on the substrate and excluding the alignment layer from a predetermined portion of the non-pixel area; and forming a ball spacer in the well using an ink-jet apparatus.
摘要翻译：公开了一种液晶显示器（LCD）器件及其制造方法，以通过防止球间隔件从非像素区域移动到像素区域来提高图像质量，其中该方法包括准备衬底，包括：像素区域和非像素区域; 在非像素区域的预定部分中形成阱，其中形成阱包括在衬底上涂覆取向层，并且从非像素区域的预定部分排除对准层; 以及使用喷墨装置在所述孔中形成球隔离物。

9. 发明授权

US07773166B2 Organic thin film transistor and method of manufacturing the organic thin film transistor, and display apparatus using the same 有权
标题翻译：有机薄膜晶体管及其制造方法以及使用其的显示装置
公开(公告)号：US07773166B2
公开(公告)日：2010-08-10
申请号：US11638384
申请日：2006-12-14
申请人： Nack Bong Choi , Min Joo Kim
发明人： Nack Bong Choi , Min Joo Kim
IPC分类号： G02F1/136
CPC分类号： H01L51/0541 , G02F1/1368 , H01L51/102
摘要： Provided are an organic semiconductor structure and a method of manufacturing the same, an organic thin film transistor (OTFT) using the organic semiconductor structure and a method of manufacturing the OTFT, and a display apparatus using the same. The OTFT includes: an oxide layer formed on a base substrate; a source electrode on the oxide layer, wherein the source electrode includes a first source electrode portion and a second source electrode portion; a drain electrode on the oxide layer, wherein the drain electrode includes a first drain electrode portion and a second drain electrode portion; an organic layer pattern having an opening that exposes the first source electrode portion and the first drain electrode portion; an organic semiconductor pattern electrically connected to the first source electrode portion and the first drain electrode portion through the opening, wherein the organic semiconductor pattern has a conductive or an insulating property depending on an applied electric field in a location; a gate insulating layer covering the organic semiconductor pattern; and a gate electrode formed on the gate insulating layer corresponding to the organic semiconductor pattern.
摘要翻译：提供一种有机半导体结构及其制造方法，使用有机半导体结构的有机薄膜晶体管（OTFT）和制造OTFT的方法以及使用其的显示装置。 OTFT包括：形成在基底基板上的氧化物层; 在所述氧化物层上的源电极，其中所述源电极包括第一源电极部分和第二源电极部分; 在所述氧化物层上的漏电极，其中所述漏电极包括第一漏电极部分和第二漏电极部分; 有机层图案，具有露出第一源电极部分和第一漏电极部分的开口; 通过所述开口与所述第一源电极部分和所述第一漏电极部分电连接的有机半导体图案，其中所述有机半导体图案具有取决于所施加的电场的导电或绝缘性能; 覆盖有机半导体图案的栅极绝缘层; 以及形成在对应于有机半导体图案的栅极绝缘层上的栅电极。

10. 发明申请

US20080239202A1 Backlight unit and liquid crystal display device having the same 有权
标题翻译：背光单元和具有该背光单元的液晶显示装置
公开(公告)号：US20080239202A1
公开(公告)日：2008-10-02
申请号：US12074069
申请日：2008-02-29
申请人： Se Chang Won , Duck Su Kim , Min Joo Kim , Eun Ju Kim , Hyeuk Chan Kwon , Jae Jung Han , Dong Seok Lee
发明人： Se Chang Won , Duck Su Kim , Min Joo Kim , Eun Ju Kim , Hyeuk Chan Kwon , Jae Jung Han , Dong Seok Lee
IPC分类号： G02F1/13357 , F21V5/00
CPC分类号： G02F1/133611 , G02F1/133604 , G02F1/133606
摘要： A backlight unit for slimmed structure and exhibiting uniform brightness through the improvement of its luminance efficiency and the quality in appearance of which is improved by the removal of bright lines, and a liquid crystal display device having the same are disclosed. The backlight unit includes a plurality of light emitting lamps disposed above a cover bottom such that the light emitting lamps are arranged at regular intervals, a diffusion plate disposed above the light emitting lamps, the diffusion plate including a substrate, a light control part formed on the bottom surface of the substrate corresponding to the light emitting lamps, and lens parts mounted on the top surface of the substrate, and an optical film disposed above the diffusion plate.
摘要翻译：一种背光单元，通过提高亮度效率提高了亮度，并通过除去亮线而改善了其外观质量，并且显示出具有这种结构的液晶显示装置。背光单元包括多个发光灯，其设置在盖底部以使得发光灯以规则的间隔布置，扩散板设置在发光灯的上方，漫射板包括基板，光控制部分形成在对应于发光灯的底板的底面和安装在基板顶面上的透镜部件以及配置在扩散板上方的光学膜。

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