会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明申请
    • ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE ORGANIC THIN FILM TRANSISTOR, AND DISPLAY APPARATUS USING THE SAME
    • 有机薄膜晶体管及制造有机薄膜晶体管的方法及使用其的显示装置
    • US20100276679A1
    • 2010-11-04
    • US12827612
    • 2010-06-30
    • Nack Bong ChoiMin Joo Kim
    • Nack Bong ChoiMin Joo Kim
    • H01L51/00H01L33/00
    • H01L51/0541G02F1/1368H01L51/102
    • Provided are an organic semiconductor structure and a method of manufacturing the same, an organic thin film transistor (OTFT) using the organic semiconductor structure and a method of manufacturing the OTFT, and a display apparatus using the same. The OTFT includes: an oxide layer formed on a base substrate; a source electrode on the oxide layer, wherein the source electrode includes a first source electrode portion and a second source electrode portion; a drain electrode on the oxide layer, wherein the drain electrode includes a first drain electrode portion and a second drain electrode portion; an organic layer pattern having an opening that exposes the first source electrode portion and the first drain electrode portion; an organic semiconductor pattern electrically connected to the first source electrode portion and the first drain electrode portion through the opening, wherein the organic semiconductor pattern has a conductive or an insulating property depending on an applied electric field in a location; a gate insulating layer covering the organic semiconductor pattern; and a gate electrode formed on the gate insulating layer corresponding to the organic semiconductor pattern.
    • 提供一种有机半导体结构及其制造方法,使用有机半导体结构的有机薄膜晶体管(OTFT)和制造OTFT的方法以及使用其的显示装置。 OTFT包括:形成在基底基板上的氧化物层; 在所述氧化物层上的源电极,其中所述源电极包括第一源电极部分和第二源电极部分; 在所述氧化物层上的漏电极,其中所述漏电极包括第一漏电极部分和第二漏电极部分; 有机层图案,具有露出第一源电极部分和第一漏电极部分的开口; 通过所述开口与所述第一源电极部分和所述第一漏电极部分电连接的有机半导体图案,其中所述有机半导体图案具有取决于所施加的电场的导电或绝缘性能; 覆盖有机半导体图案的栅极绝缘层; 以及形成在对应于有机半导体图案的栅绝缘层上的栅电极。
    • 9. 发明授权
    • Organic thin film transistor and method of manufacturing the organic thin film transistor, and display apparatus using the same
    • 有机薄膜晶体管及其制造方法以及使用其的显示装置
    • US07773166B2
    • 2010-08-10
    • US11638384
    • 2006-12-14
    • Nack Bong ChoiMin Joo Kim
    • Nack Bong ChoiMin Joo Kim
    • G02F1/136
    • H01L51/0541G02F1/1368H01L51/102
    • Provided are an organic semiconductor structure and a method of manufacturing the same, an organic thin film transistor (OTFT) using the organic semiconductor structure and a method of manufacturing the OTFT, and a display apparatus using the same. The OTFT includes: an oxide layer formed on a base substrate; a source electrode on the oxide layer, wherein the source electrode includes a first source electrode portion and a second source electrode portion; a drain electrode on the oxide layer, wherein the drain electrode includes a first drain electrode portion and a second drain electrode portion; an organic layer pattern having an opening that exposes the first source electrode portion and the first drain electrode portion; an organic semiconductor pattern electrically connected to the first source electrode portion and the first drain electrode portion through the opening, wherein the organic semiconductor pattern has a conductive or an insulating property depending on an applied electric field in a location; a gate insulating layer covering the organic semiconductor pattern; and a gate electrode formed on the gate insulating layer corresponding to the organic semiconductor pattern.
    • 提供一种有机半导体结构及其制造方法,使用有机半导体结构的有机薄膜晶体管(OTFT)和制造OTFT的方法以及使用其的显示装置。 OTFT包括:形成在基底基板上的氧化物层; 在所述氧化物层上的源电极,其中所述源电极包括第一源电极部分和第二源电极部分; 在所述氧化物层上的漏电极,其中所述漏电极包括第一漏电极部分和第二漏电极部分; 有机层图案,具有露出第一源电极部分和第一漏电极部分的开口; 通过所述开口与所述第一源电极部分和所述第一漏电极部分电连接的有机半导体图案,其中所述有机半导体图案具有取决于所施加的电场的导电或绝缘性能; 覆盖有机半导体图案的栅极绝缘层; 以及形成在对应于有机半导体图案的栅极绝缘层上的栅电极。