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1. 发明申请

US20060181828A1 Overvoltage-protected light-emitting semiconductor device 有权
标题翻译：过电压保护的发光半导体器件
公开(公告)号：US20060181828A1
公开(公告)日：2006-08-17
申请号：US11343798
申请日：2006-01-31
申请人： Junji Sato , Mikio Tazima , Tetsuji Moku , Arei Niwa , Yasuhiro Kamii
发明人： Junji Sato , Mikio Tazima , Tetsuji Moku , Arei Niwa , Yasuhiro Kamii
IPC分类号： H02H9/04
CPC分类号： H01L27/15 , H01L23/62 , H01L2924/0002 , H01L2924/00
摘要： An LED incorporating an overvoltage protector with a minimum of space requirement. The LED itself comprises a p-type semiconductor substrate, a light-generating semiconductor region grown epitaxially thereon, a first electrode on the light-generating semiconductor region, and a second electrode on the underside of the substrate. The standard method of LED fabrication is such that the substrate is notionally divisible into a main portion in register with the overlying light-generating semiconductor region and, surrounding the main portion, a tubular marginal portion needed for dicing the wafer into individual squares or dice. The overvoltage protector comprises an n-type semiconductor film formed on the marginal portion of the substrate and held against the side surfaces of the light-generating semiconductor region via an insulating film. Creating a pn junction with the marginal portion of the p-type substrate, the n-type semiconductor film provides an overvoltage protector diode which is electrically connected reversely in parallel with the LED. Various other embodiments are disclosed.
摘要翻译：一个结合了过压保护器的LED，具有最小的空间要求。 LED本身包括p型半导体衬底，其外延生长的发光半导体区域，在发光半导体区域上的第一电极和在衬底的下侧上的第二电极。 LED制造的标准方法是这样的，即衬底被意图地分成与上覆的发光半导体区域对准的主要部分，并且围绕主要部分，将晶片切割成单个正方形或骰子所需的管状边缘部分。过电压保护器包括形成在基板的边缘部分上的n型半导体膜，并且经由绝缘膜保持在发光半导体区域的侧表面上。与p型衬底的边缘部分形成pn结，n型半导体膜提供了与LED平行电连接的过电压保护二极管。公开了各种其他实施例。

2. 发明授权

US07449727B2 Overvoltage-protected light-emitting semiconductor device 有权
标题翻译：过电压保护的发光半导体器件
公开(公告)号：US07449727B2
公开(公告)日：2008-11-11
申请号：US11343798
申请日：2006-01-31
申请人： Junji Sato , Mikio Tazima , Tetsuji Moku , Arei Niwa , Yasuhiro Kamii
发明人： Junji Sato , Mikio Tazima , Tetsuji Moku , Arei Niwa , Yasuhiro Kamii
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L27/15 , H01L23/62 , H01L2924/0002 , H01L2924/00
摘要： An LED incorporating an overvoltage protector with a minimum of space requirement. The LED itself comprises a p-type semiconductor substrate, a light-generating semiconductor region grown epitaxially thereon, a first electrode on the light-generating semiconductor region, and a second electrode on the underside of the substrate. The standard method of LED fabrication is such that the substrate is notionally divisible into a main portion in register with the overlying light-generating semiconductor region and, surrounding the main portion, a tubular marginal portion needed for dicing the wafer into individual squares or dice. The overvoltage protector comprises an n-type semiconductor film formed on the marginal portion of the substrate and held against the side surfaces of the light-generating semiconductor region via an insulating film. Creating a pn junction with the marginal portion of the p-type substrate, the n-type semiconductor film provides an overvoltage protector diode which is electrically connected reversely in parallel with the LED. Various other embodiments are disclosed.
摘要翻译：一个结合了过压保护器的LED，具有最小的空间要求。 LED本身包括p型半导体衬底，其外延生长的发光半导体区域，在发光半导体区域上的第一电极和在衬底的下侧上的第二电极。 LED制造的标准方法是这样的，即衬底被意图地分成与上覆的发光半导体区域对准的主要部分，并且围绕主要部分，将晶片切割成单个正方形或骰子所需的管状边缘部分。过电压保护器包括形成在基板的边缘部分上的n型半导体膜，并且经由绝缘膜保持在发光半导体区域的侧表面上。与p型衬底的边缘部分形成pn结，n型半导体膜提供了与LED平行电连接的过电压保护二极管。公开了各种其他实施例。

3. 发明授权

US07446342B2 Light emitting diode having conductive reflecting layer 有权
标题翻译：具有导电反射层的发光二极管
公开(公告)号：US07446342B2
公开(公告)日：2008-11-04
申请号：US11350332
申请日：2006-02-08
申请人： Mikio Tazima , Tetsuji Moku , Junji Sato , Yasuhiro Kamii , Arei Niwa
发明人： Mikio Tazima , Tetsuji Moku , Junji Sato , Yasuhiro Kamii , Arei Niwa
IPC分类号： H01L27/15
CPC分类号： H01L33/405 , H01L33/20 , H01L2924/0002 , H01L2924/00
摘要： There is provided a semiconductor light emitting diode and a method of manufacturing the same that enable voltage in the forward direction to be decreased while allowing light extraction efficiency to be improved. This semiconductor light emitting diode is formed by a substrate, a light emitting portion that is disposed on one main surface of the substrate, a first electrode that is disposed on the light emitting portion, a pad electrode that is disposed on the first electrode, concave portions that are formed on at least a portion of the one main surface of the substrate, and a conductive layer that is formed from a conductive material that is disposed in the concave portions and reflects light emitted from the light emitting portion.
摘要翻译：提供一种半导体发光二极管及其制造方法，其能够降低向前方向的电压，同时可以提高光提取效率。该半导体发光二极管由基板，布置在基板的一个主表面上的发光部分，设置在发光部分上的第一电极，设置在第一电极上的焊盘电极，凹部形成在基板的一个主表面的至少一部分上的部分和由设置在凹部中并且反射从发光部分发射的光的导电材料形成的导电层。

4. 发明申请

US20060193355A1 Semiconductor light emitting diode and method of manufacturing same 有权
标题翻译：半导体发光二极管及其制造方法
公开(公告)号：US20060193355A1
公开(公告)日：2006-08-31
申请号：US11350332
申请日：2006-02-08
申请人： Mikio Tazima , Tetsuji Moku , Junji Sato , Yasuhiro Kamii , Arei Niwa
发明人： Mikio Tazima , Tetsuji Moku , Junji Sato , Yasuhiro Kamii , Arei Niwa
IPC分类号： H01S3/13
CPC分类号： H01L33/405 , H01L33/20 , H01L2924/0002 , H01L2924/00
摘要： There is provided a semiconductor light emitting diode and a method of manufacturing the same that enable voltage in the forward direction to be decreased while allowing light extraction efficiency to be improved. This semiconductor light emitting diode is formed by a substrate, a light emitting portion that is disposed on one main surface of the substrate, a first electrode that is disposed on the light emitting portion, a pad electrode that is disposed on the first electrode, concave portions that are formed on at least a portion of the one main surface of the substrate, and a conductive layer that is formed from a conductive material that is disposed in the concave portions and reflects light emitted from the light emitting portion.
摘要翻译：提供一种半导体发光二极管及其制造方法，其能够降低向前方向的电压，同时可以提高光提取效率。该半导体发光二极管由基板，布置在基板的一个主表面上的发光部分，设置在发光部分上的第一电极，设置在第一电极上的焊盘电极，凹部形成在基板的一个主表面的至少一部分上的部分和由设置在凹部中并且反射从发光部分发射的光的导电材料形成的导电层。

5. 发明申请

US20060081834A1 Semiconductor luminescent device and manufacturing method thereof 失效
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US20060081834A1
公开(公告)日：2006-04-20
申请号：US11249644
申请日：2005-10-13
申请人： Yoshiki Tada , Tetsuji Moku , Arei Niwa , Yasuhiro Kamii , Junji Sato , Takasi Kato
发明人： Yoshiki Tada , Tetsuji Moku , Arei Niwa , Yasuhiro Kamii , Junji Sato , Takasi Kato
IPC分类号： H01L31/109 , H01L21/00
CPC分类号： H01L33/14 , H01L33/32 , H01L33/42
摘要： A first principal plane faces a second principal plane of a p-type Ga N compound semiconductor that is in contact with an MQW luminescent layer. On the surface of the first principal plane, a first region made up of the p-type Ga N compound semiconductor including at least Ni is formed. On the surface of the first region, an electrode composed of an alloy including Ni and Aluminum is formed. On the electrode, a pad electrode for external connection consisting of Al or Au is formed.
摘要翻译：第一主平面面对与MQW发光层接触的p型Ga N化合物半导体的第二主面。在第一主平面的表面上，形成由至少包括Ni的p型Ga N化合物半导体构成的第一区域。在第一区域的表面上形成由包含Ni和铝的合金构成的电极。在电极上形成由Al或Au组成的用于外部连接的焊盘电极。

6. 发明授权

US07173311B2 Light-emitting semiconductor device with a built-in overvoltage protector 有权
标题翻译：具有内置过电压保护器的发光半导体器件
公开(公告)号：US07173311B2
公开(公告)日：2007-02-06
申请号：US11048954
申请日：2005-02-02
申请人： Junji Sato , Koji Otsuka , Tetsuji Moku , Takashi Kato , Arei Niwa , Yasuhiro Kamii
发明人： Junji Sato , Koji Otsuka , Tetsuji Moku , Takashi Kato , Arei Niwa , Yasuhiro Kamii
IPC分类号： H01L23/62
CPC分类号： H01L33/385 , H01L24/05 , H01L27/15 , H01L2224/04042 , H01L2224/05555 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2924/12032 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： An overvoltage-proof light-emitting diode has a lamination of light-generating semiconductor layers on a first major surface of a silicon substrate. A front electrode in the form of a bonding pad is mounted centrally atop the light-generating semiconductor layers whereas a back electrode covers a second major surface of the substrate. An overvoltage protector, of which several different forms are disclosed, is disposed between the bonding pad and the second major surface of the substrate. The bonding pad and back electrode serves as electrodes for both LED and overvoltage protector. As seen from above the device, or in a direction normal to the first major surface of the substrate, the overvoltage protector lies substantially wholly beneath the bonding pad.
摘要翻译：耐过电压的发光二极管在硅衬底的第一主表面上层叠有发光半导体层。形成焊盘形式的前电极安装在发光半导体层上方的中央，而后电极覆盖基板的第二主表面。公开了几种不同形式的过电压保护器设置在接合焊盘和衬底的第二主表面之间。接合焊盘和背面电极用作LED和过电压保护器的电极。从设备的上方或者垂直于衬底的第一主表面的方向看，过电压保护器基本上位于接合焊盘的下方。

7. 发明授权

US07897497B2 Overvoltage-protected light-emitting semiconductor device, and method of fabrication 有权
标题翻译：过电压保护的发光半导体器件及其制造方法
公开(公告)号：US07897497B2
公开(公告)日：2011-03-01
申请号：US12181052
申请日：2008-07-28
申请人： Yasuhiro Kamii , Arei Niwa , Junji Sato , Mikio Tazima
发明人： Yasuhiro Kamii , Arei Niwa , Junji Sato , Mikio Tazima
IPC分类号： H01L21/22
CPC分类号： H01L27/15 , H01L23/62 , H01L33/007 , H01L2924/0002 , H01L2924/00
摘要： A light-generating semiconductor region is grown by epitaxy on a silicon substrate. The light-generating semiconductor region is a lamination of layers of semiconducting nitrides containing a Group III element or elements. The silicon substrate has a p-type impurity-diffused layer formed therein by thermal diffusion of the Group III element or elements from the light-generating semiconductor region as a secondary product of the epitaxial growth of this region on the substrate. The p-type impurity-diffused layer is utilized as a part of overvoltage protector diodes which are serially interconnected with each other and in parallel with the LED section of the device between a pair of electrodes.
摘要翻译：通过硅衬底上的外延生长发光半导体区域。光产生半导体区域是包含III族元素的半导体氮化物层的叠层。作为该区域的外延生长的第二产物，硅衬底具有通过来自发光半导体区域的III族元素的热扩散而形成的p型杂质扩散层。 p型杂质扩散层用作过电压保护二极管的一部分，它们彼此串联并且与器件的LED部分在一对电极之间并联。

8. 发明授权

US07202510B2 Semiconductor luminescent device and manufacturing method thereof 失效
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US07202510B2
公开(公告)日：2007-04-10
申请号：US11249644
申请日：2005-10-13
申请人： Yoshiki Tada , Tetsuji Moku , Arei Niwa , Yasuhiro Kamii , Junji Sato , Takasi Kato
发明人： Yoshiki Tada , Tetsuji Moku , Arei Niwa , Yasuhiro Kamii , Junji Sato , Takasi Kato
IPC分类号： H01L29/24
CPC分类号： H01L33/14 , H01L33/32 , H01L33/42
摘要： A first principal plane faces a second principal plane of a p-type Ga N compound semiconductor that is in contact with an MQW luminescent layer. On the surface of the first principal plane, a first region made up of the p-type Ga N compound semiconductor including at least Ni is formed. On the surface of the first region, an electrode composed of an alloy including Ni and Aluminum is formed. On the electrode, a pad electrode for external connection consisting of Al or Au is formed.
摘要翻译：第一主平面面对与MQW发光层接触的p型Ga N化合物半导体的第二主面。在第一主平面的表面上，形成由至少包括Ni的p型Ga N化合物半导体构成的第一区域。在第一区域的表面上形成由包含Ni和铝的合金构成的电极。在电极上形成由Al或Au组成的用于外部连接的焊盘电极。

9. 发明申请

US20050168899A1 Light-emitting semiconductor device with a built-in overvoltage protector 有权
标题翻译：具有内置过电压保护器的发光半导体器件
公开(公告)号：US20050168899A1
公开(公告)日：2005-08-04
申请号：US11048954
申请日：2005-02-02
申请人： Junji Sato , Koji Otsuka , Tetsuji Moku , Takashi Kato , Arei Niwa , Yasuhiro Kamii
发明人： Junji Sato , Koji Otsuka , Tetsuji Moku , Takashi Kato , Arei Niwa , Yasuhiro Kamii
IPC分类号： H01L27/15 , H01L33/38 , H02H9/00
CPC分类号： H01L33/385 , H01L24/05 , H01L27/15 , H01L2224/04042 , H01L2224/05555 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2924/12032 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： An overvoltage-proof light-emitting diode has a lamination of light-generating semiconductor layers on a first major surface of a silicon substrate. A front electrode in the form of a bonding pad is mounted centrally atop the light-generating semiconductor layers whereas a back electrode covers a second major surface of the substrate. An overvoltage protector, of which several different forms are disclosed, is disposed between the bonding pad and the second major surface of the substrate. The bonding pad and back electrode serves as electrodes for both LED and overvoltage protector. As seen from above the device, or in a direction normal to the first major surface of the substrate, the overvoltage protector lies substantially wholly beneath the bonding pad.
摘要翻译：耐过电压的发光二极管在硅衬底的第一主表面上层叠有发光半导体层。形成焊盘形式的前电极安装在发光半导体层上方的中央，而后电极覆盖基板的第二主表面。公开了几种不同形式的过电压保护器设置在接合焊盘和衬底的第二主表面之间。接合焊盘和背面电极用作LED和过电压保护器的电极。从设备的上方或者垂直于衬底的第一主表面的方向看，过电压保护器基本上位于接合焊盘的下方。

10. 发明申请

US20080308823A1 OVERVOLTAGE-PROTECTED LIGHT-EMITTING SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATION 有权
标题翻译：过电压保护的发光半导体器件及其制造方法
公开(公告)号：US20080308823A1
公开(公告)日：2008-12-18
申请号：US12181052
申请日：2008-07-28
申请人： Yasuhiro Kamii , Arei Niwa , Junji Sato , Mikio Tazima
发明人： Yasuhiro Kamii , Arei Niwa , Junji Sato , Mikio Tazima
IPC分类号： H01L33/00 , H01L21/18
CPC分类号： H01L27/15 , H01L23/62 , H01L33/007 , H01L2924/0002 , H01L2924/00
摘要： A light-generating semiconductor region is grown by epitaxy on a silicon substrate. The light-generating semiconductor region is a lamination of layers of semiconducting nitrides containing a Group III element or elements. The silicon substrate has a p-type impurity-diffused layer formed therein by thermal diffusion of the Group III element or elements from the light-generating semiconductor region as a secondary product of the epitaxial growth of this region on the substrate. The p-type impurity-diffused layer is utilized as a part of overvoltage protector diodes which are serially interconnected with each other and in parallel with the LED section of the device between a pair of electrodes.
摘要翻译：通过硅衬底上的外延生长发光半导体区域。光产生半导体区域是包含III族元素的半导体氮化物层的叠层。作为该区域的外延生长的第二产物，硅衬底具有通过来自发光半导体区域的III族元素的热扩散而形成的p型杂质扩散层。 p型杂质扩散层用作过电压保护二极管的一部分，它们彼此串联并且与器件的LED部分在一对电极之间并联。

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