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    • 3. 发明申请
    • RUTHENIUM FILM-FORMING MATERIAL AND RUTHENIUM FILM-FORMING METHOD
    • 形成薄膜的成膜材料和成膜方法
    • US20120282414A1
    • 2012-11-08
    • US13503899
    • 2010-10-20
    • Ryuichi SaitoKang-go ChungHideki NishimuraTatsuya Sakai
    • Ryuichi SaitoKang-go ChungHideki NishimuraTatsuya Sakai
    • C07F15/00B05D3/02B05D3/06B05D7/24
    • C23C16/18C07C49/92C07F15/0046H01L21/76843H01L28/65
    • Disclosed is a ruthenium film-forming material having a lower melting point and a higher vapor pressure that facilitates supply of the material onto a base and moreover enables a high-quality ruthenium film to be obtained.A ruthenium film-forming material includes a compound represented by general formula (1) below (wherein R1 is independently at each occurrence a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 4 carbon atoms or a halogenated hydrocarbon group having 1 to 4 carbon atoms; R2 is independently at each occurrence a halogenated hydrocarbon group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogenated alkoxy group having 1 to 4 carbon atoms, with the proviso that R1 and R2 are mutually differing groups; R3 is independently at each occurrence a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; and L is an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and having at least two double bonds).
    • 公开了一种具有较低熔点和较高蒸气压的钌膜形成材料,其有助于将材料供应到基底上,并且还能够获得高质量的钌膜。 钌膜形成材料包括由下述通式(1)表示的化合物(其中R 1在每次出现时独立地为氢原子,卤素原子,具有1至4个碳原子的烃基或卤代烃基,其具有1至 4个碳原子; R 2在每次出现时独立地为具有1至4个碳原子的卤代烃基,具有1至4个碳原子的烷氧基或具有1至4个碳原子的卤代烷氧基,条件是R 1和R 2为 相互不同的基团; R 3在每次出现时独立地为氢原子或具有1至4个碳原子的烃基; L为具有4至10个碳原子且具有至少两个双键的不饱和烃化合物)。