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1. 发明申请

US20070075751A1 RECEIVING APPARATUS AND METHOD THEREOF 失效
标题翻译：接收装置及其方法
公开(公告)号：US20070075751A1
公开(公告)日：2007-04-05
申请号：US11470356
申请日：2006-09-06
申请人： Miki Furuya , Yukiko Takiba , Hiroshi Suzunaga
发明人： Miki Furuya , Yukiko Takiba , Hiroshi Suzunaga
IPC分类号： H03B1/00 , H03K3/00
CPC分类号： H03K3/02337 , H04B10/66
摘要： According to the invention, there is provided a receiving apparatus including: a first threshold voltage generation unit which generates a first threshold voltage lower than substantially half of a peak voltage of the voltage signal; a second threshold voltage generation unit generating a second threshold voltage lower by the first threshold voltage than the peak voltage of the voltage signal; and a selection unit which, when the voltage signal changes from a first potential to a second potential higher than the first potential, selects and outputs the second threshold voltage after exceeding the first threshold voltage, and when the voltage signal changes from the second potential to the first potential, selects and outputs the first threshold voltage after falling below the second threshold voltage
摘要翻译：根据本发明，提供了一种接收装置，包括：第一阈值电压产生单元，其产生低于电压信号的峰值电压的大致一半的第一阈值电压; 第二阈值电压产生单元，生成比所述电压信号的峰值电压低第一阈值电压的第二阈值电压; 以及选择单元，当电压信号从第一电位变化到高于第一电位的第二电位时，在超过第一阈值电压之后选择并输出第二阈值电压，并且当电压信号从第二电位变为所述第一电位在低于所述第二阈值电压之后选择并输出所述第一阈值电压

2. 发明授权

US07548700B2 Receiving apparatus and method thereof 失效
标题翻译：接收装置及其方法
公开(公告)号：US07548700B2
公开(公告)日：2009-06-16
申请号：US11470356
申请日：2006-09-06
申请人： Miki Furuya , Yukiko Takiba , Hiroshi Suzunaga
发明人： Miki Furuya , Yukiko Takiba , Hiroshi Suzunaga
IPC分类号： H04B10/06
CPC分类号： H03K3/02337 , H04B10/66
摘要： According to the invention, there is provided a receiving apparatus including: a first threshold voltage generation unit which generates a first threshold voltage lower than substantially half of a peak voltage of the voltage signal; a second threshold voltage generation unit generating a second threshold voltage lower by the first threshold voltage than the peak voltage of the voltage signal; and a selection unit which, when the voltage signal changes from a first potential to a second potential higher than the first potential, selects and outputs the second threshold voltage after exceeding the first threshold voltage, and when the voltage signal changes from the second potential to the first potential, selects and outputs the first threshold voltage after falling below the second threshold voltage.
摘要翻译：根据本发明，提供了一种接收装置，包括：第一阈值电压产生单元，其产生低于电压信号的峰值电压的大致一半的第一阈值电压; 第二阈值电压产生单元，生成比所述电压信号的峰值电压低第一阈值电压的第二阈值电压; 以及选择单元，当电压信号从第一电位变化到高于第一电位的第二电位时，在超过第一阈值电压之后选择并输出第二阈值电压，并且当电压信号从第二电位变为所述第一电位在低于所述第二阈值电压之后选择并输出所述第一阈值电压。

3. 发明申请

US20080315856A1 BANDGAP REFERENCE VOLTAGE GENERATOR CIRCUIT 审中-公开
标题翻译：带状基准电压发生器电路
公开(公告)号：US20080315856A1
公开(公告)日：2008-12-25
申请号：US12142996
申请日：2008-06-20
申请人： Yukiko Takiba , Akihiro Tanaka , Hiroshi Suzunaga
发明人： Yukiko Takiba , Akihiro Tanaka , Hiroshi Suzunaga
IPC分类号： G05F3/16
CPC分类号： G05F3/30 , H01L27/0207 , H01L27/0825
摘要： A bandgap reference voltage generator circuit includes a substrate made of a semiconductor of a first conductivity type, a first transistor formed on the substrate, a second transistor formed on the substrate and having a base commonly connected to the base of the first transistor, a light absorption region formed on the substrate, having a second conductivity type, and connected in parallel between the collector layer of the second transistor and the substrate and a reference voltage output terminal commonly connected to the bases of the first and second transistor. The area of the collector layer of the first transistor is larger than the area of the collector layer of the second transistor.
摘要翻译：带隙参考电压发生器电路包括由第一导电类型的半导体构成的衬底，形成在衬底上的第一晶体管，形成在衬底上的第二晶体管，并且具有共同连接到第一晶体管的基极的基极，吸收区形成在基板上，具有第二导电类型并且并联连接在第二晶体管的集电极层和基板之间，基准电压输出端子共同连接到第一和第二晶体管的基极。第一晶体管的集电极层的面积大于第二晶体管的集电极层的面积。

4. 发明授权

US07214922B2 Semiconductor photosensor device and information apparatus with sensitivity region for wide dynamic range 失效
标题翻译：半导体光电传感器和信息设备灵敏度范围广，动态范围广
公开(公告)号：US07214922B2
公开(公告)日：2007-05-08
申请号：US11215229
申请日：2005-08-31
申请人： Yukiko Takiba , Hiroshi Suzunaga , Hideyuki Mori
发明人： Yukiko Takiba , Hiroshi Suzunaga , Hideyuki Mori
IPC分类号： G01J1/44 , G01J1/42 , H03K17/78
CPC分类号： H01L27/1446 , H03K17/005 , H03K17/795 , H03K17/941 , H03K2217/94106
摘要： A semiconductor photosensor device includes a plurality of photodiode sections, a switch, and an output section is provided. The plurality of photodiode sections have different illuminance-output characteristics. The switch selects any one of the plurality of photodiodes sections on the basis of an illuminance of incident light irradiated on the photodiode sections. The output section outputs an signal from the selected photodiode section through the switch.
摘要翻译：半导体光电传感器装置包括多个光电二极管部分，开关和输出部分。多个光电二极管部分具有不同的照度 - 输出特性。该开关基于照射在光电二极管部分上的入射光的照度，选择多个光电二极管部分中的任何一个。输出部分通过开关输出所选光电二极管部分的信号。

5. 发明授权

US07196311B2 Semiconductor photosensor 有权
标题翻译：半导体光电传感器
公开(公告)号：US07196311B2
公开(公告)日：2007-03-27
申请号：US11201254
申请日：2005-08-11
申请人： Yukiko Takiba , Hiroshi Suzunaga
发明人： Yukiko Takiba , Hiroshi Suzunaga
IPC分类号： H01J40/14 , H01L27/15
CPC分类号： H01L27/14645 , H01L27/14603 , H01L27/14609 , H01L27/14621
摘要： A semiconductor photosensor comprises: a semiconductor substrate; a first photodiode formed on the semiconductor substrate; a second photodiode formed on the semiconductor substrate; a first amplifier circuit configured to amplify photocurrent from the first photodiode, the first amplifier circuit being formed on the semiconductor substrate; a second amplifier circuit configured to amplify photocurrent from the second photodiode, the second amplifier circuit being formed on the semiconductor substrate and having an amplifying characteristic substantially identical to that of the first photodiode; an infrared transmissive filter configured to attenuate visible light components relative to infrared light components in incident light, the infrared transmissive filter being provided on the second photodiode; and a subtraction circuit configured to output a difference between an output of the first amplifier circuit and an output of the second amplifier circuit, the subtraction circuit being formed on the semiconductor substrate.
摘要翻译：半导体光电传感器包括：半导体衬底; 形成在所述半导体基板上的第一光电二极管; 形成在所述半导体衬底上的第二光电二极管; 第一放大器电路，被配置为放大来自第一光电二极管的光电流，第一放大电路形成在半导体衬底上; 第二放大电路，被配置为放大来自所述第二光电二极管的光电流，所述第二放大电路形成在所述半导体衬底上，具有与所述第一光电二极管基本相同的放大特性; 红外透射滤光器，被配置为衰减相对于入射光中的红外光分量的可见光分量，所述红外透射滤光器设置在所述第二光电二极管上; 以及减法电路，被配置为输出所述第一放大器电路的输出和所述第二放大器电路的输出之间的差，所述减法电路形成在所述半导体衬底上。

6. 发明申请

US20060266928A1 Semiconductor photosensor 有权
标题翻译：半导体光电传感器
公开(公告)号：US20060266928A1
公开(公告)日：2006-11-30
申请号：US11201254
申请日：2005-08-11
申请人： Yukiko Takiba , Hiroshi Suzunaga
发明人： Yukiko Takiba , Hiroshi Suzunaga
IPC分类号： H01L31/00
CPC分类号： H01L27/14645 , H01L27/14603 , H01L27/14609 , H01L27/14621
摘要： A semiconductor photosensor comprises: a semiconductor substrate; a first photodiode formed on the semiconductor substrate; a second photodiode formed on the semiconductor substrate; a first amplifier circuit configured to amplify photocurrent from the first photodiode, the first amplifier circuit being formed on the semiconductor substrate; a second amplifier circuit configured to amplify photocurrent from the second photodiode, the second amplifier circuit being formed on the semiconductor substrate and having an amplifying characteristic substantially identical to that of the first photodiode; an infrared transmissive filter configured to attenuate visible light components relative to infrared light components in incident light, the infrared transmissive filter being provided on the second photodiode; and a subtraction circuit configured to output a difference between an output of the first amplifier circuit and an output of the second amplifier circuit, the subtraction circuit being formed on the semiconductor substrate.
摘要翻译：半导体光电传感器包括：半导体衬底; 形成在所述半导体衬底上的第一光电二极管; 形成在所述半导体衬底上的第二光电二极管; 第一放大器电路，被配置为放大来自第一光电二极管的光电流，第一放大电路形成在半导体衬底上; 第二放大电路，被配置为放大来自所述第二光电二极管的光电流，所述第二放大电路形成在所述半导体衬底上，具有与所述第一光电二极管基本相同的放大特性; 红外透射滤光器，被配置为衰减相对于入射光中的红外光分量的可见光分量，所述红外透射滤光器设置在所述第二光电二极管上; 以及减法电路，被配置为输出所述第一放大器电路的输出和所述第二放大器电路的输出之间的差，所述减法电路形成在所述半导体衬底上。

7. 发明申请

US20060060757A1 Semiconductor photosensor device and information apparatus 失效
标题翻译：半导体光电传感器装置及信息装置
公开(公告)号：US20060060757A1
公开(公告)日：2006-03-23
申请号：US11215229
申请日：2005-08-31
申请人： Yukiko Takiba , Hiroshi Suzunaga , Hideyuki Mori
发明人： Yukiko Takiba , Hiroshi Suzunaga , Hideyuki Mori
IPC分类号： H03K17/78
CPC分类号： H01L27/1446 , H03K17/005 , H03K17/795 , H03K17/941 , H03K2217/94106
摘要： A semiconductor photosensor device includes a plurality of photodiode sections having different illuminance-output characteristics; a switch which selects any one of the plurality of photodiodes on the basis of an illuminance of incident light irradiated on the photodiode sections; and an output section which outputs an output signal from the selected photodiode section through the switch.
摘要翻译：半导体光电传感器装置包括具有不同照度输出特性的多个光电二极管部分; 基于照射在光电二极管部分上的入射光的照度，选择多个光电二极管中的任一个的开关; 以及输出部，其通过开关输出来自所选择的光电二极管部的输出信号。

8. 发明授权

US07696467B2 Semiconductor photosensor device with sensitivity region for wide dynamic range and information apparatus 有权
标题翻译：具有灵敏度区域的半导体光电传感器装置，用于宽动态范围和信息装置
公开(公告)号：US07696467B2
公开(公告)日：2010-04-13
申请号：US11695645
申请日：2007-04-03
申请人： Yukiko Takiba , Hiroshi Suzunaga , Hideyuki Mori
发明人： Yukiko Takiba , Hiroshi Suzunaga , Hideyuki Mori
IPC分类号： H03F3/08
CPC分类号： H01L27/1446 , H03K17/005 , H03K17/795 , H03K17/941 , H03K2217/94106
摘要： A semiconductor photosensor device includes a plurality of photodiode sections, a switch, and an output section is provided. The plurality of photodiode sections have different illuminance-output characteristics. The switch selects any one of the plurality of photodiode sections on the basis of an illuminance of incident light irradiated on the photodiode sections. The output section outputs an output signal from the selected photodiode section through the switch.
摘要翻译：半导体光电传感器装置包括多个光电二极管部分，开关和输出部分。多个光电二极管部分具有不同的照度 - 输出特性。该开关基于照射在光电二极管部分上的入射光的照度，选择多个光电二极管部分中的任一个。输出部分通过开关输出所选光电二极管部分的输出信号。

9. 发明申请

US20070194217A1 Semiconductor photosensor 审中-公开
标题翻译：半导体光电传感器
公开(公告)号：US20070194217A1
公开(公告)日：2007-08-23
申请号：US11472366
申请日：2006-06-22
申请人： Yukiko Takiba , Hiroshi Suzunaga , Hideyuki Mori , Nozomu Takahashi
发明人： Yukiko Takiba , Hiroshi Suzunaga , Hideyuki Mori , Nozomu Takahashi
IPC分类号： G01J3/50
CPC分类号： G01J1/32 , G01J1/0488
摘要： According to the present invention, there is provided a semiconductor photosensor having: a first photo detector and a second photo detector formed in a surface portion of a semiconductor substrate; a first resin layer formed on a light-receiving region of the first photo detector, and including a first spectral sensitivity characteristic; a second resin layer formed on a light-receiving region of the second photo detector, and including a second spectral sensitivity characteristic; and an operation circuit which performs a predetermined operation between a first output from the first photo detector and a second output from the second photo detector, and outputs a result of the operation, wherein the first spectral sensitivity characteristic is a characteristic which removes a wavelength component in a short-wavelength region, and the second spectral sensitivity characteristic is a characteristic which removes a wavelength component in an infrared region.
摘要翻译：根据本发明，提供了一种半导体光电传感器，其具有：形成在半导体基板的表面部分中的第一光电检测器和第二光电检测器; 第一树脂层，形成在所述第一光电检测器的光接收区域上，并且包括第一光谱灵敏度特性; 第二树脂层，形成在所述第二光电检测器的光接收区域上，并且包括第二光谱灵敏度特性; 以及操作电路，其在所述第一光检测器的第一输出和所述第二光检测器的第二输出之间执行预定的操作，并输出所述操作的结果，其中所述第一光谱灵敏度特性是除去波长分量在短波长区域中，第二光谱灵敏度特性是去除红外区域中的波长分量的特性。

10. 发明申请

US20070171285A1 SEMICONDUCTOR PHOTOSENSOR DEVICE AND INFORMATION APPARATUS WITH SENSITIVITY REGION FOR WIDE DYNAMIC RANGE 有权
标题翻译：具有灵敏度区域的半导体光电设备和信息装置，用于宽动态范围
公开(公告)号：US20070171285A1
公开(公告)日：2007-07-26
申请号：US11695645
申请日：2007-04-03
申请人： Yukiko TAKIBA , Hiroshi Suzunaga , Hideyuki Mori
发明人： Yukiko TAKIBA , Hiroshi Suzunaga , Hideyuki Mori
IPC分类号： H04N9/68
CPC分类号： H01L27/1446 , H03K17/005 , H03K17/795 , H03K17/941 , H03K2217/94106
摘要： A semiconductor photosensor device includes a plurality of photodiode sections, a switch, and an output section is provided. The plurality of photodiode sections have different illuminance-output characteristics. The switch selects any one of the plurality of photodiode sections on the basis of an illuminance of incident light irradiated on the photodiode sections. The output section outputs an output signal from the selected photodiode section through the switch.
摘要翻译：半导体光电传感器装置包括多个光电二极管部分，开关和输出部分。多个光电二极管部分具有不同的照度 - 输出特性。该开关基于照射在光电二极管部分上的入射光的照度，选择多个光电二极管部分中的任一个。输出部分通过开关输出所选光电二极管部分的输出信号。

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