会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Liquid crystal display device and manufacturing method
    • 液晶显示装置及制造方法
    • US08619228B2
    • 2013-12-31
    • US13443373
    • 2012-04-10
    • Mie ShimizuKoichi MinatoKenzo FukuyoshiManabu Ito
    • Mie ShimizuKoichi MinatoKenzo FukuyoshiManabu Ito
    • G02F1/1343
    • G02F1/133707
    • A liquid crystal display device includes an array substrate and a counter substrate that face each other with a liquid crystal layer therebetween. The array substrate includes a first electrode, a second electrode, and an alignment sustaining layer. The first electrode has a comb-teeth shape. The second electrode has a comb-teeth shape, faces the first electrode, and includes a protruding portion protruding from the first electrode in a direction where comb teeth are arranged. The alignment sustaining layer is formed above a surface of the array substrate being in contact with the liquid crystal layer and gives liquid crystals a pre-tilt to a direction in which the second electrode protrudes from the first electrode, in a direction in which the comb teeth are arranged.
    • 液晶显示装置包括阵列基板和相对的基板,其间具有液晶层。 阵列基板包括第一电极,第二电极和对准维持层。 第一电极具有梳齿形状。 第二电极具有梳齿形状,面对第一电极,并且包括从梳齿布置的方向上从第一电极突出的突出部分。 取向维持层形成在与液晶层接触的阵列基板的表面的上方,并且使液晶在第二电极从第一电极突出的方向上沿着梳子的方向倾斜预倾斜 牙齿排列。
    • 3. 发明申请
    • OVEN-CONTROLLED CRYSTAL OSCILLATOR
    • 烤箱控制水晶振荡器
    • US20120306582A1
    • 2012-12-06
    • US13488223
    • 2012-06-04
    • Manabu ItoHiroyuki Mitome
    • Manabu ItoHiroyuki Mitome
    • H03B1/00
    • H03L1/04
    • A crystal unit and a thermistor with negative resistance-temperature characteristics are housed in a thermostatic oven heated by a heater. A transistor driving the heater is controlled by an output of a differential amplifier, the thermistor is placed between a power supply voltage and an inverting input of the amplifier, and a first resistor used to adjust the temperature of a zero temperature coefficient point of the crystal unit is installed between the inverting input and a ground point. A second resistor is installed between the power supply voltage and a non-inverting input of the amplifier and a third resistor is installed between the non-inverting input and ground point. One of the second and third resistors is a resistor assembly made up of a plurality of resistance elements and one of these resistance elements is provided with positive resistance-temperature characteristics and adapted to detect ambient temperature.
    • 具有负电阻温度特性的晶体单元和热敏电阻容纳在由加热器加热的恒温炉中。 驱动加热器的晶体管由差分放大器的输出控制,热敏电阻位于放大器的电源电压和反相输入之间,第一电阻器用于调节晶体的零温度系数点的温度 单元安装在反相输入和接地点之间。 在电源电压和放大器的非反相输入端之间安装第二个电阻,第三个电阻安装在非反相输入和接地点之间。 第二和第三电阻器中的一个是由多个电阻元件组成的电阻器组件,并且这些电阻元件中的一个具有正电阻温度特性并且适于检测环境温度。
    • 5. 发明授权
    • Control circuit for thermostatic oven in oven controlled crystal oscillator
    • 恒温烤箱控制晶体振荡器控制电路
    • US08026460B2
    • 2011-09-27
    • US12219304
    • 2008-07-18
    • Manabu ItoTakeshi Uchida
    • Manabu ItoTakeshi Uchida
    • H05B1/00H03B1/00
    • H03L1/028
    • Provided is a control circuit for a thermostatic oven in an oven controlled crystal oscillator, which is capable of further improving stability of an oscillation frequency. A control circuit in which a thermistor whose resistance value changes according to a temperature outputs a signal according to the ambient temperature of the thermostatic oven inside the oscillator, an operational amplifier outputs a signal according to a difference between the output of the thermistor and a reference signal, a power transistor amplifies the output of the operational amplifier, and a heater generates heat based on a collector voltage of the power transistor, is provided with a temperature sensor circuit having a transistor with a base to which the output of the operational amplifier is input. The control circuit outputs a collector voltage of the transistor as an internal temperature signal which changes according to a temperature inside the oscillator.
    • 本发明提供一种能够进一步提高振荡频率稳定性的炉控晶体振荡器中的恒温炉的控制电路。 其中电阻值根据温度变化的热敏电阻根据振荡器内的恒温箱的环境温度输出信号的控制电路,运算放大器根据热敏电阻的输出和参考电压之间的差输出信号 功率晶体管放大运算放大器的输出,并且加热器基于功率晶体管的集电极电压产生热量,设置有具有晶体管的温度传感器电路,该晶体管具有基极,运算放大器的输出为 输入。 控制电路输出晶体管的集电极电压作为根据振荡器内的温度而变化的内部温度信号。
    • 7. 发明申请
    • Constant-temperature type crystal oscillator
    • 恒温型晶体振荡器
    • US20100073098A1
    • 2010-03-25
    • US12586028
    • 2009-09-16
    • Manabu Ito
    • Manabu Ito
    • H03B5/30
    • H05K1/0201G05D23/1906G05D23/24H01L2924/0002H03L1/028H03L1/04H05K2201/09781H05K2201/10022H05K2201/10083H05K2203/1105H05K2203/165H01L2924/00
    • A constant-temperature type crystal oscillator includes: a crystal unit including a case main body, in which two crystal terminals and two dummy terminals are provided on an outer bottom face thereof, and a crystal element housed in the case main body; an oscillator output circuit including an oscillating stage and a buffering stage; a temperature control circuit for keeping an operational temperature of the crystal unit; and a circuit substrate, on which circuit elements of the crystal unit, the oscillator output circuit and the temperature control circuit are installed. The temperature control circuit includes: heating chip resistors; a power transistor; and a temperature sensing element. The dummy terminals are connected to a circuit terminal for dummy on the circuit substrate. The circuit terminal for dummy is connected to an electrically-conducting path, to which one terminal of the heating chip resistors is electrically connected, on the circuit substrate.
    • 恒温型晶体振荡器包括:晶体单元,包括壳体主体,其外部底面上设置有两个晶体端子和两个虚拟端子,以及容纳在壳体主体中的晶体元件; 振荡器输出电路,包括振荡级和缓冲级; 用于保持晶体单元的工作温度的温度控制电路; 以及电路基板,其上安装有晶体单元的电路元件,振荡器输出电路和温度控制电路。 温度控制电路包括:加热片式电阻; 功率晶体管; 和温度感测元件。 虚拟端子连接到电路基板上的虚拟电路端子。 用于虚拟的电路端子连接到电路基板上的加热片式电阻器的一个端子电连接的导电路径。
    • 9. 发明申请
    • Control circuit for thermostatic oven in oven controlled crystal oscillator
    • 恒温烤箱控制晶体振荡器控制电路
    • US20090020517A1
    • 2009-01-22
    • US12219304
    • 2008-07-18
    • Manabu ItoTakeshi Uchida
    • Manabu ItoTakeshi Uchida
    • H05B1/00
    • H03L1/028
    • Provided is a control circuit for a thermostatic oven in an oven controlled crystal oscillator, which is capable of further improving stability of an oscillation frequency. A control circuit in which a thermistor whose resistance value changes according to a temperature outputs a signal according to the ambient temperature of the thermostatic oven inside the oscillator, an operational amplifier outputs a signal according to a difference between the output of the thermistor and a reference signal, a power transistor amplifies the output of the operational amplifier, and a heater generates heat based on a collector voltage of the power transistor, is provided with a temperature sensor circuit having a transistor with a base to which the output of the operational amplifier is input. The control circuit outputs a collector voltage of the transistor as an internal temperature signal which changes according to a temperature inside the oscillator.
    • 本发明提供一种能够进一步提高振荡频率稳定性的炉控晶体振荡器中的恒温炉的控制电路。 其中电阻值根据温度变化的热敏电阻根据振荡器内的恒温箱的环境温度输出信号的控制电路,运算放大器根据热敏电阻的输出和参考电压之间的差输出信号 功率晶体管放大运算放大器的输出,并且加热器基于功率晶体管的集电极电压产生热量,设置有具有晶体管的温度传感器电路,该晶体管具有基极,运算放大器的输出为 输入。 控制电路输出晶体管的集电极电压作为根据振荡器内的温度而变化的内部温度信号。
    • 10. 发明申请
    • Thin film transistor
    • 薄膜晶体管
    • US20080237600A1
    • 2008-10-02
    • US12075873
    • 2008-03-13
    • Chihiro MiyazakiManabu Ito
    • Chihiro MiyazakiManabu Ito
    • H01L29/94
    • H01L29/7869H01L29/4908H01L29/78609
    • One embodiment of the present invention is a thin film transistor, including: an insulating substrate; a gate electrode, a gate insulating layer and a semiconductor layer including an oxide, these three elements being formed over the insulating substrate in this order, and the gate insulating layer including: a lower gate insulating layer, the lower gate insulating layer being in contact with the insulating substrate and being an oxide including any one of the elements In, Zn or Ga; and an upper gate insulating layer provided on the lower gate insulating layer, the upper gate insulating layer comprising at least one layer; and a source electrode and a drain electrode formed on the semiconductor layer.
    • 本发明的一个实施例是薄膜晶体管,包括:绝缘基板; 栅极电极,栅极绝缘层和包括氧化物的半导体层,这三个元素依次形成在绝缘基板上,并且栅极绝缘层包括:下部栅极绝缘层,下部栅极绝缘层接触 具有绝缘基板并且是包括元素In,Zn或Ga中的任何一种的氧化物; 以及设置在所述下栅绝缘层上的上栅极绝缘层,所述上栅绝缘层包括至少一层; 以及形成在半导体层上的源电极和漏电极。