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1. 发明申请

US20140104733A1 COMBINATION ESD PROTECTION CIRCUITS AND METHODS 有权
标题翻译：组合ESD保护电路和方法
公开(公告)号：US20140104733A1
公开(公告)日：2014-04-17
申请号：US14109080
申请日：2013-12-17
申请人： Micron Technology, Inc.
发明人： XIAOFENG FAN , MICHAEL D. CHAINE
IPC分类号： H02H9/04 , H01L27/02
CPC分类号： H02H9/044 , H01L27/0259 , H01L27/0262 , H01L27/0617 , H01L27/0817 , H02H9/046
摘要： Circuits, integrated circuits, apparatuses, and methods, such as those for protecting circuits against electrostatic discharge events are disclosed. In an example method, a thyristor is triggered to conduct current from a signal node to a reference voltage node using leakage currents provided by a transistor formed in a semiconductor doped well shared with the base of the thyristor. The leakage currents are responsive to a noise event (e.g., electrostatic discharge (ESD) event) at the signal node, and increase the voltage of the semiconductor doped well to forward bias the base and the collector of the thyristor. The triggered thyristor conducts the current resulting from the ESD event to the reference voltage node.
摘要翻译：公开了用于保护电路免受静电放电事件的电路，集成电路，装置和方法。在一个示例性方法中，晶闸管被触发以使用由在晶体管的基极共享的半导体掺杂阱中形成的晶体管提供的漏电流从信号节点传导到参考电压节点。泄漏电流响应于信号节点处的噪声事件（例如，静电放电（ESD）事件），并且增加半导体掺杂阱的电压以使晶闸管的基极和集电极正向偏置。触发晶闸管将ESD事件导致的电流导通到参考电压节点。

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