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1. 发明授权

US06995454B2 Semiconductor optical integrated device having a light emitting portion, a modulation section and a separation portion 失效
标题翻译：具有发光部分，调制部分和分离部分的半导体光学集成器件
公开(公告)号：US06995454B2
公开(公告)日：2006-02-07
申请号：US10354026
申请日：2003-01-30
申请人： Michio Murata , Takeyoshi Masuda
发明人： Michio Murata , Takeyoshi Masuda
IPC分类号： H01L33/00 , H01L29/26
CPC分类号： H01S5/0265 , H01S5/06226 , H01S5/2277
摘要： A semiconductor optical integrated device 1 comprises a light-emitting element portion 110, modulation element portion 120, and separation portion 130 on a substrate 2. Light-emitting element portion 110 comprises a semiconductor laser element portion, and modulation element portion 120 comprises a modulation element portion. Separation portion 130 is formed between light-emitting element portion 110 and modulation element portion 120. In separation portion 130, a semiconductor embedded portion 80e is provided in a second clad layer 8m. Whereas second clad layer 8m consists of p-type InP, semiconductor embedded portion 80e consists of n-type InP. Hence semiconductor embedded portion 80e has the effect of impeding the leakage current flowing between electrodes 90a and 90b. As a result, the leakage current occurring between electrodes 90a and 90b via second clad layer 8m is reduced.
摘要翻译：半导体光集成器件1包括基板2上的发光元件部分110，调制元件部分120和分离部分130。发光元件部分110包括半导体激光元件部分，调制元件部分120包括调制元件部分。分离部分130形成在发光元件部分110和调制元件部分120之间。在分离部分130中，半导体嵌入部分80e设置在第二包层8m中。而第二包层8m由p型InP组成，半导体嵌入部分80e由n型InP组成。因此，半导体嵌入部分80e具有阻止在电极90a和90b之间流动的漏电流的效果。结果，经由第二覆盖层8m在电极90a和90b之间产生的漏电流减小。

2. 发明授权

US08003995B2 Semiconductor optical device with suppressed double injection phenomenon 有权
标题翻译：半导体光学器件具有抑制双重注入现象
公开(公告)号：US08003995B2
公开(公告)日：2011-08-23
申请号：US12230170
申请日：2008-08-25
申请人： Michio Murata
发明人： Michio Murata
IPC分类号： H01L33/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2275 , H01S5/3095 , H01S5/34306 , H01S2301/173
摘要： A semiconductor optical device where the leak current due to the double injection of carriers may be suppressed and a simplified process to form the device are disclosed. The device 10 provides, on the n-type InP substrate, a mesa and a burying region formed so as to bury the mesa. The mesa includes the first cladding layer, the active layer, the tunnel junction layer and the second cladding layer on the n-type InP substrate in this order. The tunnel junction layer comprises an n-type layer coming in contact with the active layer and a p-type layer between the active layer and the n-type layer. The n-type layer has a carrier concentration higher than that of the second cladding layer, while, the p-type layer may have the band gap energy greater than that of the second cladding layer.
摘要翻译：可以抑制由于载体的双重注入引起的漏电流的半导体光学器件，并且公开了形成器件的简化处理。装置10在n型InP衬底上提供形成为埋入台面的台面和埋藏区域。台面依次包括n型InP衬底上的第一覆层，有源层，隧道结层和第二覆层。隧道结层包括与有源层接触的n型层和有源层与n型层之间的p型层。 n型层的载流子浓度高于第二包覆层，p型层的带隙能量比第二覆盖层的能隙大。

3. 发明申请

US20090067460A1 Semiconductor optical device with suppressed double injection phenomenon 有权
标题翻译：半导体光学器件具有抑制双重注入现象
公开(公告)号：US20090067460A1
公开(公告)日：2009-03-12
申请号：US12230170
申请日：2008-08-25
申请人： Michio Murata
发明人： Michio Murata
IPC分类号： H01S3/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2275 , H01S5/3095 , H01S5/34306 , H01S2301/173
摘要： A semiconductor optical device where the leak current due to the double injection of carriers may be suppressed and a simplified process to form the device are disclosed. The device 10 provides, on the n-type InP substrate, a mesa and a burying region formed so as to bury the mesa. The mesa includes the first cladding layer, the active layer, the tunnel junction layer and the second cladding layer on the n-type InP substrate in this order. The tunnel junction layer comprises an n-type layer coming in contact with the active layer and a p-type layer between the active layer and the n-type layer. The n-type layer has a carrier concentration higher than that of the second cladding layer, while, the p-type layer may have the band gap energy greater than that of the second cladding layer.
摘要翻译：可以抑制由于载体的双重注入引起的漏电流的半导体光学器件，并且公开了形成器件的简化处理。装置10在n型InP衬底上提供形成为埋入台面的台面和埋藏区域。台面依次包括n型InP衬底上的第一覆层，有源层，隧道结层和第二覆层。隧道结层包括与有源层接触的n型层和有源层与n型层之间的p型层。 n型层的载流子浓度高于第二包覆层，p型层的带隙能量比第二覆盖层的能隙大。

4. 发明授权

US08243768B2 Semiconductor diffraction grating device and semiconductor laser 有权
$Semiconductor diffraction grating device and semiconductor laser$
标题翻译：半导体衍射光栅器件和半导体激光器
公开(公告)号：US08243768B2
公开(公告)日：2012-08-14
申请号：US12902526
申请日：2010-10-12
申请人： Michio Murata
发明人： Michio Murata
IPC分类号： H01S3/10 , H01S5/00
CPC分类号： H01S5/06256 , B82Y20/00 , G02B2006/12107 , H01S5/0425 , H01S5/1212 , H01S5/34306
摘要： A semiconductor diffraction grating device includes a semiconductor substrate having a principal surface, a semiconductor core layer and a semiconductor cladding layer provided on the principal surface, and a chirped grating structure provided between the semiconductor core layer and the semiconductor cladding layer. The chirped grating structure includes a first region, a second region, and a third region arranged in that order in a predetermined axis direction, the first, second, and third regions including a plurality of projections constituting a chirped grating. The plurality of projections are provided at placement positions arranged with a predetermined pitch in the predetermined axis direction. The coupling coefficient κ of the chirped grating monotonically increases in the predetermined axis direction to a predetermined value in the first region, remains flat in the second region, and monotonically decreases in the predetermined axis direction from the predetermined value in the third region.
摘要翻译：半导体衍射光栅装置包括具有主表面的半导体衬底，设置在主表面上的半导体芯层和半导体包层，以及设置在半导体芯层和半导体包覆层之间的啁啾光栅结构。啁啾光栅结构包括在预定轴方向依次布置的第一区域，第二区域和第三区域，第一，第二和第三区域包括构成啁啾光栅的多个突起。多个突起设置在沿预定轴线方向以预定间距排列的放置位置处。耦合系数kgr 所述啁啾光栅在预定轴方向上单调地增加到第一区域中的预定值，在第二区域中保持平坦，并且在预定轴方向上在第三区域中从预定值单调减小。

5. 发明授权

US07803645B2 Semiconductor light-emitting device and a method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07803645B2
公开(公告)日：2010-09-28
申请号：US11362448
申请日：2006-02-27
申请人： Michio Murata
发明人： Michio Murata
IPC分类号： H01L21/00
CPC分类号： H01S5/162 , H01L33/025 , H01L33/16 , H01L33/20 , H01S5/1085
摘要： The present invention is to provide a light-emitting device, a laser diode, formed without using the mechanical cleavage, and a process for manufacturing the device. The process comprises, after stacking semiconductor layers of the first cladding layer, the active layer, and the second cladding layer, a forming of a groove to define the laser resonator, the depth of which reaches the substrate, and the mass-transportation, within the groove, from the side surface of the groove in a portion of the substrate and the first cladding layer to the facet of the active layer and the second cladding layer. Since the facet layer thus transported reflects the crystal orientation of the side of the groove, the crystal quality of the facet layer can be maintained.
摘要翻译：本发明提供一种不使用机械切割而形成的发光装置，激光二极管，以及该装置的制造方法。该方法包括：在堆叠第一包层，有源层和第二包覆层的半导体层之后，形成凹槽以限定激光谐振器，其深度到达基板并进行质量传输所述槽从所述基板的一部分中的所述槽的侧表面和所述第一包层到所述有源层和所述第二覆层的所述面。由于这样输送的刻面层反映了凹槽侧面的晶体取向，所以可保持刻面层的晶体质量。

6. 发明授权

US5572356A Optical amplifier 失效
标题翻译：光放大器
公开(公告)号：US5572356A
公开(公告)日：1996-11-05
申请号：US502618
申请日：1995-07-14
申请人： Ichiro Yoshida , Masayuki Shigematsu , Michio Murata
发明人： Ichiro Yoshida , Masayuki Shigematsu , Michio Murata
IPC分类号： H01S3/07 , H01S3/06 , H01S3/067 , H01S3/094 , H01S3/0941 , H01S3/10 , H01S3/16 , H01S3/17 , H04B10/07 , H04B10/2507 , H04B10/29 , H04B10/293 , H01S3/00
CPC分类号： H01S3/094003 , H01S3/1608
摘要： The present invention provide an optical amplifier that excites a rare earth element dopant in a light transmitting medium with exciting light generated from a semiconductor laser such that the light propagating through the light transmitting medium is amplified, wherein drive power being supplied to drive the semiconductor laser is modulated with an AC component having a higher frequency than the frequency corresponding to the lifetime of the excited state of the ion of the rare earth element, and the drive current from the drive power has an amplitude which is higher than the threshold value of the semiconductor laser.
摘要翻译：本发明提供了一种光放大器，其在具有由半导体激光器产生的激发光的光透射介质中激发稀土元素掺杂剂，使得通过透光介质传播的光被放大，其中驱动功率被提供以驱动半导体激光器用具有比对应于稀土元素的离子的激发态的寿命的频率高的频率的AC分量进行调制，并且来自驱动功率的驱动电流具有高于该稀土元素的阈值的幅度半导体激光器

7. 发明授权

US08300992B2 Optical modulator having Mach-Zender arrangement and method to generate modulated optical signal using the same 有权
标题翻译：具有Mach-Zender布置的光调制器和使用该调制光信号的方法
公开(公告)号：US08300992B2
公开(公告)日：2012-10-30
申请号：US12887131
申请日：2010-09-21
申请人： Michio Murata
发明人： Michio Murata
IPC分类号： G02F1/035
CPC分类号： B82Y20/00 , G02B2006/12142 , G02F1/225
摘要： A semiconductor optical modulator with the Mach-Zender type is disclosed. The optical modulator of the invention cab driven by a single phase signal and reduce the chirping of the modulated light. Two waveguides of the Mach-Zender modulator each including an active layer showing the exciton resonance in the refractive index are connected with a resistor. The driving signal is applied to one of the waveguides, while, the signal is applied to the other waveguide through the resistor where the other waveguide is grounded through a resistor. Adjusting the resistance of two resistors and the amplitude of the applied signal, the Mach-Zender modulator shows a substantial modulation degree with substantially no chirping characteristic.
摘要翻译：公开了一种具有Mach-Zender类型的半导体光调制器。由单相信号驱动的本发明驾驶室的光调制器，并减少调制光的啁啾。 Mach-Zender调制器的两个波导包括显示折射率的激子谐振的有源层与电阻器连接。驱动信号被施加到波导中的一个，而信号通过电阻施加到另一个波导，其中另一个波导通过电阻器接地。调整两个电阻的电阻和施加的信号的幅度，Mach-Zender调制器显示基本上没有啁啾特性的实质调制度。

8. 发明授权

US08063408B2 Integrated semiconductor optical device and optical apparatus using the same 有权
标题翻译：集成半导体光学器件和使用其的光学器件
公开(公告)号：US08063408B2
公开(公告)日：2011-11-22
申请号：US12607521
申请日：2009-10-28
申请人： Michio Murata
发明人： Michio Murata
IPC分类号： H01L29/885 , H01L33/00
CPC分类号： H01S5/0265 , H01L29/885 , H01S5/3095
摘要： In an integrated semiconductor optical device, a first cladding layer is made of a first conductivity type semiconductor. A first active layer for forming a first semiconductor optical device is provided on the first cladding layer in a first area of a principal surface of a substrate. A second active layer for forming a second semiconductor optical device is provided on the first cladding layer in a second area of the principal surface. A second cladding layer made of a second conductivity type semiconductor is provided on the second active layer. A third cladding layer made of a first conductivity type semiconductor is provided on the first active layer. A tunnel junction region is provided between the first active layer and the third cladding layer. The first active layer is coupled to the second active layer by butt joint. The second and third cladding layers form a p-n junction.
摘要翻译：在集成半导体光学器件中，第一覆层由第一导电型半导体制成。用于形成第一半导体光学器件的第一有源层设置在基板的主表面的第一区域中的第一覆层上。用于形成第二半导体光学器件的第二有源层在主表面的第二区域中设置在第一覆层上。由第二导电型半导体制成的第二覆层设置在第二有源层上。由第一导电型半导体制成的第三覆层设置在第一有源层上。隧道结区域设置在第一有源层和第三覆层之间。第一有源层通过对接联接到第二有源层。第二和第三覆层形成p-n结。

9. 发明申请

US20080252879A1 OPTICAL SAMPLE MEASUREMENT DEVICE, OPTICAL CELL AND WATER QUALITY MEASUREMENT DEVICE 审中-公开
标题翻译：光学样品测量装置，光电池和水质量测量装置
公开(公告)号：US20080252879A1
公开(公告)日：2008-10-16
申请号：US12099340
申请日：2008-04-08
申请人： Masayoshi Ito , Michio Murata
发明人： Masayoshi Ito , Michio Murata
IPC分类号： G01N21/00 , G01N21/01
CPC分类号： G01N21/532 , G01N21/15 , G01N21/8507 , G01N2021/152
摘要： An optical sample measuring device such as a turbidity measurement instrument to isolate a portion of a fluid sample and isolate it from the influences of outside light. A sample cell in the instrument can include a cleaning unit that can contact transparent sections of the sample cell for an initial cleaning prior to a measurement cycle. A body member can further encompass a light source and one or more detectors for measuring the influence of the sample on light that is transmitted through and scattered by the fluid sample. The sample cell can be in a probe that can be immersed in the fluid and it can be operatively connected, for example, through a waterproof cable to a handheld measuring instrument body that can provide appropriate output of the measurement after processing the measurement signals.
摘要翻译：一种光学样品测量装置，例如浊度测量仪器，用于隔离流体样品的一部分，并将其与外界光的影响隔离开来。仪器中的样品池可以包括可以在测量周期之前接触样品池的透明部分进行初始清洁的清洁单元。身体构件还可以包括光源和一个或多个检测器，用于测量样品对通过流体样品透射和散射的光的影响。样品池可以在可以浸入流体中的探针中，并且可以例如通过防水电缆可操作地连接到手持式测量仪器主体，该手持式测量仪器主体可以在处理测量信号之后提供适当的测量输出。

10. 发明申请

US20080101425A1 Electro-absorption semiconductor optical modulator 审中-公开
标题翻译：电吸收半导体光调制器
公开(公告)号：US20080101425A1
公开(公告)日：2008-05-01
申请号：US11976456
申请日：2007-10-24
申请人： Michio Murata , Haruhisa Soda
发明人： Michio Murata , Haruhisa Soda
IPC分类号： H01S5/06 , G02F1/017
CPC分类号： H01S5/0265 , B82Y20/00 , G02F1/017 , G02F1/01725 , G02F2001/01766
摘要： An electro-absorption semiconductor optical modulator comprises an n-type cladding layer of III-V compound semiconductor; a p-type cladding layer of III-V compound semiconductor; and an active region. The active region is provided between the n-type cladding layer and the p-type cladding layer, and has a quantum well structure. The quantum well structure includes plural semiconductor units, each of which has a well layer, a barrier layer and an interlayer. The interlayer is made of material of a bandgap between a bandgap of the well layer and a bandgap of the barrier layer, and the well layer is compressively strained. The well layer, interlayer and barrier layer are sequentially arranged in each semiconductor unit in a direction from the p-type cladding layer to the n-type cladding layer.
摘要翻译：一种电吸收半导体光调制器，包括III-V族化合物半导体的n型包覆层; III-V族化合物半导体的p型覆层; 和活跃区域。有源区设置在n型覆层与p型覆层之间，具有量子阱结构。量子阱结构包括多个具有阱层，阻挡层和中间层的半导体单元。中间层由阱层的带隙和阻挡层的带隙之间的带隙的材料制成，并且阱层被压缩应变。在从p型包层到n型包覆层的方向上，在各半导体单元中依次配置阱层，层间隔离层和阻挡层。

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