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1. 发明授权

US07777592B2 Antenna sharing device and portable telephone 失效
标题翻译：天线共用装置和便携式电话
公开(公告)号：US07777592B2
公开(公告)日：2010-08-17
申请号：US11689848
申请日：2007-03-22
申请人： Michihiko Nishigaki , Ryoichi Ohara , Minoru Kawase , Kazuhiko Itaya
发明人： Michihiko Nishigaki , Ryoichi Ohara , Minoru Kawase , Kazuhiko Itaya
IPC分类号： H03H9/72
CPC分类号： H03H9/706 , H03H9/0571
摘要： An antenna sharing device has a common signal terminal pair, a first terminal pair, a second terminal pair, a first filter, a second filter, a first inductor element, second inductor elements, third inductor elements. The second and third inductor elements have a plurality of inductor elements, respectively. An inductor element closest to the first terminal pair among the inductor elements included in the second inductor elements and an inductor element closest to the second terminal pair among the third inductor elements are arranged further away from the first inductor element than the other inductor elements included in the second and third inductor elements, or formed on a substrate different from a substrate on which the first inductor element is formed, or formed opposite to the first inductor element by sandwiching a shielding pattern.
摘要翻译：天线共享装置具有公共信号端子对，第一端子对，第二端子对，第一滤波器，第二滤波器，第一电感器元件，第二电感器元件，第三电感器元件。第二和第三电感元件分别具有多个电感器元件。包括在第二电感器元件中的电感器元件中最接近第一端子对的电感器元件和最靠近第三电感器元件中的第二端子对的电感器元件被布置成远离第一电感器元件，而不是包括在其中的其它电感器元件第二和第三电感器元件，或形成在不同于其上形成有第一电感器元件的衬底的衬底上，或者通过夹持屏蔽图案与第一电感器元件相对形成。

2. 发明申请

US20070222540A1 ANTENNA SHARING DEVICE AND PORTABLE TELEPHONE 失效
标题翻译：天线共享设备和便携式电话
公开(公告)号：US20070222540A1
公开(公告)日：2007-09-27
申请号：US11689848
申请日：2007-03-22
申请人： Michihiko Nishigaki , Ryoichi Ohara , Minoru Kawase , Kazuhiko Itaya
发明人： Michihiko Nishigaki , Ryoichi Ohara , Minoru Kawase , Kazuhiko Itaya
IPC分类号： H03H9/70
CPC分类号： H03H9/706 , H03H9/0571
摘要： An antenna sharing device has a common signal terminal pair, a first terminal pair, a second terminal pair, a first filter, a second filter, a first inductor element, second inductor elements, third inductor elements. The second and third inductor elements have a plurality of inductor elements, respectively. An inductor element closest to the first terminal pair among the inductor elements included in the second inductor elements and an inductor element closest to the second terminal pair among the third inductor elements are arranged further away from the first inductor element than the other inductor elements included in the second and third inductor elements, or formed on a substrate different from a substrate on which the first inductor element is formed, or formed opposite to the first inductor element by sandwiching a shielding pattern.
摘要翻译：天线共享装置具有公共信号端子对，第一端子对，第二端子对，第一滤波器，第二滤波器，第一电感器元件，第二电感器元件，第三电感器元件。第二和第三电感元件分别具有多个电感器元件。包括在第二电感器元件中的电感器元件中最接近第一端子对的电感器元件和最靠近第三电感器元件中的第二端子对的电感器元件被布置成远离第一电感器元件，而不是包括在其中的其它电感器元件第二和第三电感器元件，或形成在不同于其上形成有第一电感器元件的衬底的衬底上，或者通过夹持屏蔽图案与第一电感器元件相对形成。

3. 发明授权

US07770274B2 Piezoelectric thin film device and method for manufacturing the same 失效
标题翻译：压电薄膜器件及其制造方法
公开(公告)号：US07770274B2
公开(公告)日：2010-08-10
申请号：US11946910
申请日：2007-11-29
申请人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H04R17/00
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.
摘要翻译：压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

4. 发明申请

US20080072408A1 PIEZOELECTRIC THIN FILM DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：压电薄膜装置及其制造方法
公开(公告)号：US20080072408A1
公开(公告)日：2008-03-27
申请号：US11946910
申请日：2007-11-29
申请人： Kenya SANO , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya SANO , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H01L41/22 , H04R31/00 , H05K3/10
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.
摘要翻译：压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

5. 发明授权

US07420320B2 Piezoelectric thin film device and method for manufacturing the same 有权
标题翻译：压电薄膜器件及其制造方法
公开(公告)号：US07420320B2
公开(公告)日：2008-09-02
申请号：US11946913
申请日：2007-11-29
申请人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H01H47/00 , H01H51/22 , H01L41/04
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.
摘要翻译：压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

6. 发明申请

US20080074005A1 PIEZOELECTRIC THIN FILM DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20080074005A1
公开(公告)日：2008-03-27
申请号：US11946913
申请日：2007-11-29
申请人： Kenya SANO , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya SANO , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H01L41/047
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

7. 发明申请

US20060001508A1 Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturing FBAR 失效
标题翻译：薄膜体声波谐振器（FBAR），FBAR实现的滤波器和FBAR制造方法
公开(公告)号：US20060001508A1
公开(公告)日：2006-01-05
申请号：US11169645
申请日：2005-06-30
申请人： Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
发明人： Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
IPC分类号： H03H9/56
CPC分类号： H03H9/02094 , H03H3/04 , H03H9/02133 , H03H9/173 , H03H9/174 , H03H9/703 , H03H2003/021 , H03H2003/023
摘要： A film bulk acoustic-wave resonator encompasses a substrate having a cavity; a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity; a piezoelectric layer provided on the bottom electrode; and a top electrode provided on the piezoelectric layer having crystal axes oriented along a thickness direction of the piezoelectric layer, a full width at half maximum of the distribution of the orientations of the crystal axes is smaller than or equal to about six degrees.
摘要翻译：薄膜体声波谐振器包括具有空腔的基板; 部分地固定在基板上的底部电极，底部电极的一部分机械地悬挂在空腔上方; 设置在底部电极上的压电层; 以及设置在压电体层上的顶电极，其具有沿着压电体层的厚度方向取向的晶轴，所述晶轴的取向分布的半峰全宽小于或等于约6度。

8. 发明申请

US20050184627A1 Piezoelectric thin film device and method for manufacturing the same 失效
标题翻译：压电薄膜器件及其制造方法
公开(公告)号：US20050184627A1
公开(公告)日：2005-08-25
申请号：US11043257
申请日：2005-01-27
申请人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H01L41/047 , H01L41/22 , H03H3/02 , H03H9/02 , H03H9/15 , H03H9/17
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.
摘要翻译：压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

9. 发明授权

US07463117B2 Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturing FBAR 失效
标题翻译：薄膜体声波谐振器（FBAR），FBAR实现的滤波器和FBAR制造方法
公开(公告)号：US07463117B2
公开(公告)日：2008-12-09
申请号：US11169645
申请日：2005-06-30
申请人： Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
发明人： Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
IPC分类号： H03H9/13 , H03H9/15 , H03H9/54
CPC分类号： H03H9/02094 , H03H3/04 , H03H9/02133 , H03H9/173 , H03H9/174 , H03H9/703 , H03H2003/021 , H03H2003/023
摘要： A film bulk acoustic-wave resonator encompasses a substrate having a cavity; a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity; a piezoelectric layer provided on the bottom electrode; and a top electrode provided on the piezoelectric layer having crystal axes oriented along a thickness direction of the piezoelectric layer, a full width at half maximum of the distribution of the orientations of the crystal axes is smaller than or equal to about six degrees.
摘要翻译：薄膜体声波谐振器包括具有空腔的基板; 部分地固定在基板上的底部电极，底部电极的一部分机械地悬挂在空腔上方; 设置在底部电极上的压电层; 以及设置在压电体层上的顶电极，其具有沿着压电体层的厚度方向取向的晶轴，所述晶轴的取向分布的半峰全宽小于或等于约6度。

10. 发明授权

US07323805B2 Piezoelectric thin film device and method for manufacturing the same 失效
公开(公告)号：US07323805B2
公开(公告)日：2008-01-29
申请号：US11043257
申请日：2005-01-27
申请人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H01L41/047
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

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