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1. 发明授权

US06721938B2 Optical proximity correction for phase shifting photolithographic masks 有权
标题翻译：用于相移光刻掩模的光学邻近校正
公开(公告)号：US06721938B2
公开(公告)日：2004-04-13
申请号：US10082697
申请日：2002-02-25
申请人： Christophe Pierrat , Michel Luc Côté
发明人： Christophe Pierrat , Michel Luc Côté
IPC分类号： G06F1750
CPC分类号： G03F1/30 , G03F1/36 , G03F1/70
摘要： A method for producing a computer readable definition of photolithographic mask used to define a target pattern is provided. The phase shift mask patterns include phase shift windows, and the trim mask patterns include trim shapes, which have boundaries defined by such sets of line segments. For a particular pair of phase shift windows used to define a target feature in a target pattern, each of the phase shift windows in the pair can be considered to have a boundary that includes at least one line segment that abuts the target feature. Likewise, a complementary trim shape used in definition of the target feature, for example by including a transmissive region used to clear an unwanted phase transition between the particular pair of phase shift windows, includes at least one line segment that can be considered to abut the target feature. Proximity correction is provided by adjusting the position of the at least one line segment on the boundary of a phase shift windows in said pair which abuts the target feature, and by adjusting the position of the at least one line segment on the boundary of the complementary trim shape which abuts the target feature.
摘要翻译：提供了一种用于产生用于定义目标图案的光刻掩模的计算机可读定义的方法。相移掩模图案包括相移窗口，并且修剪掩模图案包括具有由这些线段集合限定的边界的修剪形状。对于用于定义目标图案中的目标特征的特定的一对相移窗口，该对中的每个相移窗口可以被认为具有包括至少一个邻接目标特征的线段的边界。类似地，在目标特征的定义中使用的互补的修剪形状，例如通过包括用于清除特定的一对相移窗口之间的不需要的相变的透射区域，包括至少一个可被认为邻接目标特征。通过调整邻接目标特征的所述对中的相移窗口的边界上的至少一个线段的位置，并且通过调整互补的边界上的至少一个线段的位置来提供接近校正贴合目标特征的修剪形状。

2. 发明授权

US06807663B2 Accelerated layout processing using OPC pre-processing 有权
标题翻译：使用OPC预处理加速布局处理
公开(公告)号：US06807663B2
公开(公告)日：2004-10-19
申请号：US10253204
申请日：2002-09-23
申请人： Michel Luc Côté , Christophe Pierrat , Philippe Hurat
发明人： Michel Luc Côté , Christophe Pierrat , Philippe Hurat
IPC分类号： G06F1750
CPC分类号： G03F1/36 , G06F17/5068
摘要： Performing optical proximity correction (OPC) is typically done during a critical time, wherein even small delays in finishing OPC can have significant adverse effects on product introduction and/or market exposure. In accordance with one feature of the invention, sets of repeating structures in library elements and/or layout data can be identified during a non-critical time, e.g. early in cell library development, possibly years prior to the direct application of OPC to a final layout. OPC can be performed on repeating structures during this non-critical time. Later, during the critical time (e.g. during tape out), an OPC tool can use the pre-processed structures in conjunction with a chip layout to more quickly generate a modified layout, thereby saving valuable time as a chip moves from design to production.
摘要翻译：执行光学邻近校正（OPC）通常在关键时间完成，其中甚至在整理OPC中的小延迟可能对产品引入和/或市场暴露具有显着的不利影响。根据本发明的一个特征，可以在非关键时间期间识别库元素和/或布局数据中的重复结构集合，例如，早期的细胞库开发，可能在OPC直接应用到最终布局之前的几年。在这个非关键时刻，可以对重复结构执行OPC。之后，在关键时刻（例如在磁带输出期间），OPC工具可以将预处理的结构与芯片布局一起使用，以更快地生成修改的布局，从而在芯片从设计转移到生产时节省宝贵的时间。

3. 发明授权

US07083879B2 Phase conflict resolution for photolithographic masks 有权
公开(公告)号：US07083879B2
公开(公告)日：2006-08-01
申请号：US09932239
申请日：2001-08-17
申请人： Christophe Pierrat , Michel Luc Côté
发明人： Christophe Pierrat , Michel Luc Côté
IPC分类号： G03F9/00 , G06F17/50
CPC分类号： G03F7/70466 , G03F1/26 , G03F7/70425 , G03F7/70433 , G03F7/70558
摘要： A photolithographic mask used for defining a layer in an integrated circuit, or other work piece, where the layer comprises a pattern including a plurality of features to be implemented with phase shifting in phase shift regions is laid out including for patterns comprising high density, small dimension features, and for “full shift” patterns. The method includes identifying cutting areas for phase shift regions based on characteristics of the pattern. Next, the process cuts the phase shift regions in selected ones of the cutting areas to define phase shift windows, and assigns phase values to the phase shift windows. The phase shift values assigned comprise φ and θ, so that destructive interference is caused in transitions between adjacent phase shift windows having respective phase shift values of φ and θ. In the preferred embodiment, φ is equal to approximately θ+180 degrees. Results of the cutting and assigning steps are stored in a computer readable medium, used for manufacturing a mask, and used for manufacturing an integrated circuit. By identifying the cutting areas based on characteristics of the pattern to be formed, the problem of dividing phase shift regions into phase shift windows, and assigning phase shift values to the windows is simplified.

4. 发明授权

US06852471B2 Exposure control for phase shifting photolithographic masks 有权
标题翻译：相移光刻掩模的曝光控制
公开(公告)号：US06852471B2
公开(公告)日：2005-02-08
申请号：US09972428
申请日：2001-10-05
申请人： Christophe Pierrat , Michel Luc Côté
发明人： Christophe Pierrat , Michel Luc Côté
IPC分类号： G03F1/00 , G03F7/20 , G03F7/22 , H01L21/027 , G03B27/42 , G03B27/68 , G06F17/50
CPC分类号： G03F7/70466 , G03F1/26 , G03F1/70 , G03F7/70425 , G03F7/70433 , G03F7/70558
摘要： Mask and integrated circuit fabrication approaches are described to facilitate use of so called “full phase” masks. This facilitates use of masks where substantially all of a layout is defined using phase shifting. More specifically, exposure settings including relative dosing between the phase shift mask and the trim masks are described. Additionally, single reticle approaches for accommodating both masks are considered. In one embodiment, the phase shifting mask and the trim mask are exposed using the same exposure conditions, except for relative dosing. In another embodiment, the relative dosing between the phase and trim patterns is 1.0:r, 2.0
摘要翻译：描述掩模和集成电路制造方法以便于使用所谓的“全相”掩模。这有助于使用掩模，其中使用相移来定义基本上所有的布局。更具体地，描述包括相移掩模和修剪蒙版之间的相对配量的曝光设置。另外，考虑了用于容纳两个掩模的单个掩模版方法。在一个实施例中，除了相对剂量之外，使用相同的曝光条件使相移掩模和修剪掩模曝光。在另一个实施方案中，相位和修剪图案之间的相对剂量为1.0：r，2.0

5. 发明授权

US06787271B2 Design and layout of phase shifting photolithographic masks 有权
公开(公告)号：US06787271B2
公开(公告)日：2004-09-07
申请号：US10085759
申请日：2002-02-28
申请人： Michel Luc Côté , Christophe Pierrat
发明人： Michel Luc Côté , Christophe Pierrat
IPC分类号： G03F900
CPC分类号： G03F7/70466 , G03F1/26 , G03F1/36 , G03F1/68 , G03F1/70 , G03F7/70425 , G03F7/70433 , G03F7/70558
摘要： A method for defining a full phase layout for defining a layer of material in an integrated circuit is described. The method can be used to define, arrange, and refine phase shifters to substantially define the layer using phase shifting. Through the process, computer readable definitions of an alternating aperture, dark field phase shift mask and of a complimentary mask are generated. Masks can be made from the definitions and then used to fabricate a layer of material in an integrated circuit. The separations between phase shifters, or cuts, are designed for easy mask manufacturability while also maximizing the amount of each feature defined by the phase shifting mask. Cost functions are used to describe the relative quality of phase assignments and to select higher quality phase assignments and reduce phase conflicts.

6. 发明授权

US07169515B2 Phase conflict resolution for photolithographic masks 有权
标题翻译：光刻掩模的相位冲突分辨率
公开(公告)号：US07169515B2
公开(公告)日：2007-01-30
申请号：US10834623
申请日：2004-04-29
申请人： Christophe Pierrat , Michel Luc Côté
发明人： Christophe Pierrat , Michel Luc Côté
IPC分类号： G03F9/00 , G06F17/50
CPC分类号： G03F7/70466 , G03F1/26 , G03F7/70425 , G03F7/70433 , G03F7/70558
摘要： A photolithographic mask used for defining a layer in an integrated circuit, or other work piece, where the layer comprises a pattern including a plurality of features to be implemented with phase shifting in phase shift regions is laid out including for patterns comprising high density, small dimension features, and for “full shift” patterns. The method includes identifying cutting areas for phase shift regions based on characteristics of the pattern. Next, the process cuts the phase shift regions in selected ones of the cutting areas to define phase shift windows, and assigns phase values to the phase shift windows. The phase shift values assigned comprise φ and θ, so that destructive interference is caused in transitions between adjacent phase shift windows having respective phase shift values of φ and θ. In the preferred embodiment, φ is equal to approximately θ+180 degrees. Results of the cutting and assigning steps are stored in a computer readable medium, used for manufacturing a mask, and used for manufacturing an integrated circuit. By identifying the cutting areas based on characteristics of the pattern to be formed, the problem of dividing phase shift regions into phase shift windows, and assigning phase shift values to the windows is simplified.
摘要翻译：布置用于在集成电路或其它工件中定义层的光刻掩模，其中该层包括在相移区域中实现相移的多个特征的图案，包括用于高密度，小的尺寸特征和“全移”图案。该方法包括基于图案的特性识别相移区域的切割区域。接下来，该处理切割选择的切割区域中的相移区域以限定相移窗口，并将相位值分配给相移窗口。分配的相移值包括phi和theta，使得在具有各自的phi和theta的相移值的相邻相移窗口之间的转变中引起相消干涉。在优选实施例中，phi等于大约θ+ 180度。切割和分配步骤的结果存储在用于制造掩模的计算机可读介质中，并用于制造集成电路。通过基于要形成的图案的特性来识别切割区域，简化了将相移区域划分为相移窗口并将相移值分配给窗口的问题。

7. 发明授权

US06861204B2 Design and layout of phase shifting photolithographic masks 有权
公开(公告)号：US06861204B2
公开(公告)日：2005-03-01
申请号：US10809650
申请日：2004-03-26
申请人： Michel Luc Côté , Christophe Pierrat
发明人： Michel Luc Côté , Christophe Pierrat
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , G03C5/00 , G03F9/00
CPC分类号： G03F7/70466 , G03F1/26 , G03F1/36 , G03F1/68 , G03F1/70 , G03F7/70425 , G03F7/70433 , G03F7/70558
摘要： A method for defining a full phase layout for defining a layer of material in an integrated circuit is described. The method can be used to define, arrange, and refine phase shifters to substantially define the layer using phase shifting. Through the process, computer readable definitions of an alternating aperture, dark field phase shift mask and of a complimentary mask are generated. Masks can be made from the definitions and then used to fabricate a layer of material in an integrated circuit. The separations between phase shifters, or cuts, are designed for easy mask manufacturability while also maximizing the amount of each feature defined by the phase shifting mask. Cost functions are used to describe the relative quality of phase assignments and to select higher quality phase assignments and reduce phase conflicts.

8. 发明授权

US06681379B2 Phase shifting design and layout for static random access memory 有权
标题翻译：静态随机存取存储器的相移设计和布局
公开(公告)号：US06681379B2
公开(公告)日：2004-01-20
申请号：US09996973
申请日：2001-11-15
申请人： Christophe Pierrat , Michel Luc Côté
发明人： Christophe Pierrat , Michel Luc Côté
IPC分类号： G06F1750
CPC分类号： G03F7/70433 , G03F1/26 , G03F1/30 , G03F1/36 , G03F1/70 , G03F7/70425 , G03F7/70466
摘要： Methods and apparatuses for fully defining static random access memory (SRAM) using phase shifting layouts are described. The approach includes identifying that a layout includes SRAM cells and defining phase shifting regions in a mask description to fully define the SRAM cells. The phase conflicts between adjacent phase shifters are resolved by selecting cutting patterns designed for the SRAM shape and functional structure. Additionally, the transistor gates of the SRAM cells can be reduced in size relative to the original SRAM layout design. Thus, an SRAM cell can be lithographically printed with small, consistent critical dimensions including extremely small gate lengths resulting in higher yields and improved performance.
摘要翻译：描述了使用相移布局完全定义静态随机存取存储器（SRAM）的方法和装置。该方法包括识别布局包括SRAM单元并且在掩模描述中定义相移区域以完全限定SRAM单元。通过选择为SRAM形状和功能结构设计的切割图案来解决相邻移相器之间的相位冲突。另外，相对于原始的SRAM布局设计，SRAM单元的晶体管栅极的尺寸可以减小。因此，SRAM单元可以被光刻印刷，具有小的，一致的临界尺寸，包括非常小的栅极长度，导致更高的产量和改进的性能。

9. 发明授权

US07500217B2 Handling of flat data for phase processing including growing shapes within bins to identify clusters 有权
标题翻译：处理平面数据用于相位处理，包括在箱内生长形状以识别集群
公开(公告)号：US07500217B2
公开(公告)日：2009-03-03
申请号：US11083697
申请日：2005-03-17
申请人： Michel Luc Côté , Christophe Pierrat
发明人： Michel Luc Côté , Christophe Pierrat
IPC分类号： G06F17/50 , G06F9/455 , G06F1/00
CPC分类号： G03F1/30 , G03F1/26 , G03F1/36 , G03F1/68 , G03F7/70425 , G03F7/70433 , G03F7/70466 , G03F7/70558
摘要： Definition of a phase shifting layout from an original layout can be time consuming. If the original layout is divided into useful groups, i.e. clusters that can be independently processed, then the phase shifting process can be performed more rapidly. If the shapes on the layout are enlarged, then the overlapping shapes can be grouped together to identify shapes that should be processed together. For large layouts, growing and grouping the shapes can be time consuming. Therefore, an approach that uses bins can speed up the clustering process, thereby allowing the phase shifting to be performed in parallel on multiple computers. Additional efficiencies result if identical clusters are identified and processing time saved so that repeated clusters of shapes only undergo the computationally expensive phase shifter placement and assignment process a single time.
摘要翻译：从原始布局定义相移布局可能是耗时的。如果将原始布局分成有用的组，即可以被独立处理的集群，则可以更快地执行相移过程。如果布局上的形状被放大，则可以将重叠的形状分组在一起以识别应该一起处理的形状。对于大型布局，增长和分组形状可能是耗时的。因此，使用箱体的方法可以加快聚类过程，从而允许在多个计算机上并行执行相移。如果确定相同的集群并节省处理时间，则可以产生额外的效率，以便重复的形状集群只能在单次时间内经历计算上昂贵的移相器放置和分配过程。

10. 发明授权

US06981240B2 Cutting patterns for full phase shifting masks 有权
标题翻译：全相移掩模的切割图案
公开(公告)号：US06981240B2
公开(公告)日：2005-12-27
申请号：US10340377
申请日：2003-01-10
申请人： Christophe Pierrat , Michel Luc Côté
发明人： Christophe Pierrat , Michel Luc Côté
IPC分类号： G06F17/50 , G11C7/00
CPC分类号： H01L27/1104 , G03F1/30 , H01L21/32139 , H01L27/0207
摘要： A full phase shifting mask (FPSM) can define substantially all of the features of an integrated circuit using pairs of shifters having opposite phase. In particular, cutting patterns for working with the polysilicon, or gate, layers and active layers of static random access memory (SRAM) cells are considered. To resolve phase conflicts between shifters, one or more cutting patterns can be selected. These cutting patterns include cuts on contact landing pads. This cut simplifies the FPSM layout while ensuring greater critical dimension control of the more important features and reducing mask misalignment sensitivity.
摘要翻译：全相移掩模（FPSM）可以使用具有相反相位的移相器对来基本上定义集成电路的所有特征。特别地，考虑用于与多晶硅或静态随机存取存储器（SRAM）单元的栅极，层和有源层一起工作的切割图案。为了解决移位器之间的相位冲突，可以选择一个或多个切割模式。这些切割图案包括接触着陆垫上的切口。该切割简化了FPSM布局，同时确保了更重要的特征的更大的关键尺寸控制，并降低了掩模对准灵敏度。

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