会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明申请
    • IMAGING DEVICE AND METHOD
    • 成像装置和方法
    • US20140374576A2
    • 2014-12-25
    • US13497578
    • 2010-09-03
    • Ulf LeonhardtTomas TycLucas Heitzmann GabrielliMichal Lipson
    • Ulf LeonhardtTomas TycLucas Heitzmann GabrielliMichal Lipson
    • G01J1/04
    • G02B17/086G02B1/002G02B3/0087G02B27/58
    • The resolution of conventional imaging devices is restricted by the diffraction limit ‘Perfect’ imaging devices which can achieve a resolution beyond the diffraction limit have been considered impossible to implement. However, the present disclosure provides an imaging device which can achieve improved resolution beyond the diffraction limit and which can be implemented in practice. Said imaging device comprises: a. a lens having a refractive index that varies according to a predetermined refractive index profile; b. a source; c. an outlet for decoupling waves from the device; and d. a reflector provided around the lens, the source and the outlet, wherein the reflector and the refractive index profile of the lens are together arranged to direct waves transmitted in any of a plurality of directions from the source to the outlet.
    • 常规成像装置的分辨率受到衍射极限的限制,可以实现超出衍射极限的分辨率的“完美”成像装置被认为是不可能实现的。 然而,本公开提供了一种成像装置,其可以实现超出衍射极限的改进的分辨率,并且可以在实践中实现。 所述成像装置包括:a。 具有根据预定折射率分布变化的折射率的透镜; b。 来源; C。 用于将波从设备中去耦的出口; 和d。 设置在透镜周围的反射器,源和出口,其中反射器和透镜的折射率分布在一起布置成将从多个方向中的任一个方向传输的波引导到出射口。
    • 8. 发明授权
    • Optical logic device
    • 光逻辑器件
    • US08731355B2
    • 2014-05-20
    • US12438720
    • 2007-08-24
    • Qianfan XuMichal Lipson
    • Qianfan XuMichal Lipson
    • G02B6/12G02B6/00G02B6/293
    • G02B6/29335G02B6/29338G02F3/02G02F2203/15
    • An all optical logic circuit includes a micro-ring resonator (110) optically coupled to a waveguide (115) The waveguide (115) provides multiple optical input signals (INPUT A, INPUT B) and an optical probe signal (PROBE) at a different frequency (lambda s) than the optical input signals (INPUT A, INPUT B) to the micro-ring resonator (110) such that the probe signal (PROBE) exhibits logical amplitude transitions as a function of the multiple input signals (INPUT A, INPUT B) The logical amplitude transitions of the optical probe signal (PROBE) correlate to an ANDing or NANDing of the optical input signals (INPUT A, INPUT B) In one embodiment, the all optical logic circuit is an integrated silicon device.
    • 所有光学逻辑电路包括光耦合到波导(115)的微环谐振器(110)。波导(115)提供多个光输入信号(INPUT A,INPUT B)和光探针信号(PROBE) 频率(λs)大于光输入信号(INPUT A,INPUT B)到微环谐振器(110),使得探针信号(PROBE)表现出作为多个输入信号(INPUT A, 输入B)光学探针信号(PROBE)的逻辑振幅转换与光输入信号(INPUT A,INPUT B)的“与”或“与”相关。在一个实施例中,所有光逻辑电路都是集成硅器件。
    • 9. 发明申请
    • POLYSILICON PHOTODETECTOR, METHODS AND APPLICATIONS
    • 多晶硅光电转换器,方法与应用
    • US20120213468A1
    • 2012-08-23
    • US13398132
    • 2012-02-16
    • Michal LipsonKyle Preston
    • Michal LipsonKyle Preston
    • G02B6/42H01L31/0368
    • H01L31/02327G01J1/42G02B6/12004G02B6/29341H01L31/035281H01L31/03682H01L31/09H01L31/105H01L31/182Y02E10/546
    • A silicon photonic photodetector structure, a method for fabricating the silicon photonic photodetector structure and a method for operating a silicon photonic photodetector device that results from the photonic photodetector structure each use a strip waveguide optically coupled with a polysilicon material photodetector layer that may be contiguous with a semiconductor material slab to which is located and formed a pair of electrical contacts separated by the polysilicon material photodetector layer. Within the foregoing silicon photonic photodetector structure and related methods the polysilicon material photodetector layer includes defect states suitable for absorbing an optical signal from the strip waveguide and generating an electrical output signal using at least one of the electrical contacts when the optical signal includes a photon energy less than a band gap energy of a polysilicon material from which is comprised the polysilicon material photodetector layer.
    • 硅光子检测器结构,用于制造硅光子检测器结构的方法和用于操作由光子光电检测器结构产生的硅光子检测器器件的方法各自使用与多晶硅材料光电检测器层光学耦合的带状波导,所述多晶硅材料光电检测器层可以与 半导体材料板,其被定位并形成由多晶硅材料光电检测器层隔开的一对电触头。 在上述硅光子检测器结构和相关方法中,多晶硅材料光电检测器层包括适于吸收来自带状波导的光信号的缺陷状态,并且当光信号包括光子能量时,使用至少一个电触点产生电输出信号 小于多晶硅材料的带隙能量,其中由多晶硅材料构成多晶硅材料光电检测器层。