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1. 发明授权

US06324755B1 Solid interface module 失效
标题翻译：实体接口模块
公开(公告)号：US06324755B1
公开(公告)日：2001-12-04
申请号：US09596384
申请日：2000-06-16
申请人： Michael T. Borkowski , Thomas V. Sikina , John W. Roman
发明人： Michael T. Borkowski , Thomas V. Sikina , John W. Roman
IPC分类号： H05K334
CPC分类号： H05K1/0207 , H01L2224/48091 , H01L2224/48227 , H01L2924/12032 , H01L2924/15311 , H05K1/0206 , H05K1/0237 , H05K1/024 , H05K1/0243 , H05K3/0061 , H05K3/4641 , H05K3/4688 , H05K2201/0323 , H05K2201/068 , H05K2201/10727 , H05K2201/10734 , Y10T29/49126 , Y10T29/49144 , H01L2924/00014 , H01L2924/00
摘要： A microwave solid interface module having transmit and receive functionality includes a substrate supporting microwave, logic, and DC bias circuits. In one embodiment, the substrate can be formed from BeO. The module can include a BGA package that provides a connector-less interface for RF, DC, and thermal connections to a supporting module. The BGA structure provides vertical connections between the BGA solder balls and a respective DC signal layer, a microwave signal layer, and a thermally conductive core within the supporting module.
摘要翻译：具有发射和接收功能的微波固体接口模块包括支持微波，逻辑和DC偏置电路的衬底。在一个实施例中，衬底可以由BeO形成。该模块可以包括一个BGA封装，为支持模块的RF，DC和热连接提供无连接器接口。 BGA结构提供了在支撑模块内的BGA焊球和相应的DC信号层，微波信号层和导热芯之间的垂直连接。

2. 发明申请

US20120313213A1 POLYGON SHAPED POWER AMPLIFIER CHIPS 审中-公开
标题翻译： POLYGON形状功率放大器芯片
公开(公告)号：US20120313213A1
公开(公告)日：2012-12-13
申请号：US13154953
申请日：2011-06-07
申请人： Paul M. Head , Michael T. Borkowski , Robert B. Hallock
发明人： Paul M. Head , Michael T. Borkowski , Robert B. Hallock
IPC分类号： H01L27/088
CPC分类号： H01L27/0207 , H01L27/0605 , H01L27/085
摘要： A semiconductor structure having: a wafer; and a plurality of chips disposed on the wafer, each one of the chips having a linear array of a plurality of transistors, the linear array being at an oblique angle with respect to grid lines in the wafer separating the chips. Each one of the transistors has a plurality of parallel control electrodes extending longitudinally along an axis perpendicular to the axis along which the plurality of transistors is distributed. A matching circuit is disposed on the integrated circuit chip between a corner of the integrated circuit chip and the plurality of transistors.
摘要翻译：一种半导体结构，具有：晶片; 以及设置在所述晶片上的多个芯片，每个所述芯片具有多个晶体管的线性阵列，所述线性阵列相对于分离所述芯片的所述晶片中的栅格线成倾斜角。晶体管中的每一个具有沿垂直于多个晶体管分布的轴线的轴纵向延伸的多个平行控制电极。在集成电路芯片的角部与多个晶体管之间的集成电路芯片上设置有匹配电路。

3. 发明授权

US4649416A Microwave transistor package 失效
标题翻译：微波晶体管封装
公开(公告)号：US4649416A
公开(公告)日：1987-03-10
申请号：US567829
申请日：1984-01-03
申请人： Michael T. Borkowski , David G. Laighton , Barry Altschul
发明人： Michael T. Borkowski , David G. Laighton , Barry Altschul
IPC分类号： H01L23/66 , H01L23/02
CPC分类号： H01L23/66 , H01L24/49 , H01L2223/6644 , H01L2224/48091 , H01L2224/49175 , H01L24/48 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01322 , H01L2924/014 , H01L2924/12033 , H01L2924/15153 , H01L2924/1517 , H01L2924/16195 , H01L2924/19041 , H01L2924/3011 , H01L2924/30111
摘要： A microwave transistor package is provided having a thermal and electrical conductive refractory type substrate. A ground plane plate is provided, such plate having an open-ended compartment therein, the open end of such compartment being disposed adjacent an upper surface portion of the ground plane plate. A bottom surface of such plate is disposed on an upper, inner surface region of the substrate. The thermal coefficient of expansion of the ground plane plate is substantially greater than the thermal coefficient of expansion of the substrate. An electrical insulator is disposed within the compartment, such insulator having a relatively high thermal transfer characteristic and having upper and lower conductive layers with side wall portions disposed adjacent side wall portions of the compartment. A first apertured ceramic insulating layer having conductive metallization regions disposed on the upper surface of the ceramic insulator extending from the apertured edge of the ceramic insulator to the outer edge of the ceramic insulator is provided. The lower surface of the ceramic insulator is disposed over the substrate and about peripheral portions of the inner surface region of the substrate. A second apertured ceramic insulating layer is disposed over and aligned with the first apertured ceramic insulating layer, the upper surface of the second ceramic insulating layer being metallized and bondable to a cover for such package. The package is fabricated by brazing together, in a single step, the pair of ceramic insulating layers, the electrical insulator and the substrate.
摘要翻译：提供了具有导热耐热型基片的微波晶体管封装。提供了一个接地平面板，这种板在其中具有开口的隔室，该隔间的开口端邻近接地平面板的上表面部分设置。这种板的底面设置在基板的上表面区域上。接地平板的热膨胀系数显着大于基板的热膨胀系数。电绝缘体设置在隔室内，这种绝缘体具有相对高的热转印特性，并具有上和下导电层，侧壁部分邻近隔室的侧壁部分设置。提供了一种第一有孔陶瓷绝缘层，其具有设置在从陶瓷绝缘体的有孔边缘延伸到陶瓷绝缘体的外边缘的陶瓷绝缘体的上表面上的导电金属化区域。陶瓷绝缘体的下表面设置在衬底上以及衬底的内表面区域周围。第二有孔陶瓷绝缘层设置在第一有孔陶瓷绝缘层上并与第一有孔陶瓷绝缘层对准，第二陶瓷绝缘层的上表面被金属化并可粘合到用于这种封装的盖上。封装是通过在一个步骤中钎焊在一起的一对陶瓷绝缘层，电绝缘体和基底来制造的。

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