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    • 3. 发明申请
    • Device and method for using dynamic cell plate sensing in a DRAM memory cell
    • 在DRAM存储单元中使用动态单元板感测的装置和方法
    • US20070115711A1
    • 2007-05-24
    • US11653590
    • 2007-01-16
    • Michael ShoreBrian Callaway
    • Michael ShoreBrian Callaway
    • G11C5/06
    • G11C11/4074H01L27/0207H01L27/108H01L27/10852H01L27/10873
    • A memory cell, device, system and method for operating a memory cell are disclosed that utilize an isolated dynamic cell plate. The memory cell includes a first and second pass transistor and a first and second capacitor. The first pass transistor and first capacitor and the second pass transistor and second capacitor are each configured in series for individual respective coupling between a first digit line and a second digit line. The first and second pass transistors are further configured for respective control by first and second wordlines. The memory cell further includes an interconnection formed on a cell plate conductor between a terminal end of the first capacitor and a terminal end of the second capacitor. Furthermore, the interconnection is electrically isolated from other portions of the cell plate conductor.
    • 公开了一种用于操作存储器单元的存储器单元,器件,系统和方法,其利用隔离的动态单元板。 存储单元包括第一和第二传输晶体管以及第一和第二电容器。 第一传输晶体管和第一电容器以及第二传输晶体管和第二电容器各自被配置为串联地用于第一数字线和第二数字线之间的各自的耦合。 第一和第二传输晶体管被进一步配置用于由第一和第二字线进行相应的控制。 存储单元还包括在第一电容器的末端和第二电容器的末端之间的单元板导体上形成的互连。 此外,互连与电池板导体的其它部分电绝缘。
    • 6. 发明授权
    • Structure and a method for storing information in a semiconductor device
    • 用于在半导体器件中存储信息的结构和方法
    • US5895962A
    • 1999-04-20
    • US664109
    • 1996-06-13
    • Hua ZhengMichael ShoreJeffrey P. WrightTodd A. Merritt
    • Hua ZhengMichael ShoreJeffrey P. WrightTodd A. Merritt
    • G01R31/3181G11C17/10H01L27/112H01L27/04G11C17/00
    • G01R31/3181G11C17/10H01L27/112
    • A semiconductor device includes a plurality of conductive layers that are formed on the substrate. Two electrically intercoupled sections of a read-only storage element, such as a fuse element, which together compose the storage element, are each formed in a different one of the conductive layers. The storage element has a storage state, and each section has a conductivity. One can change the storage state of the storage element by changing the conductivity of one of the sections. Additionally, multiple storage elements may be coupled in parallel to form a storage module. Each of the storage elements of the storage module may include multiple storage sections that are each formed in a different conductive layer. The storage elements may store the version number of the mask set used to form the semiconductor device. Alternatively, a conductive layer is formed on a substrate, and one or more read-only storage elements are formed in the conductive layer. Each of the storage elements is formed in a predetermined state such that they collectively store a digital value that identifies a mask used to form the conductive layer.
    • 半导体器件包括形成在衬底上的多个导电层。 共同组成存储元件的只读存储元件(例如熔丝元件)的两个电互相耦合部分分别形成在不同的一个导电层中。 存储元件具有存储状态,并且每个部分具有导电性。 可以通过改变其中一个部分的电导率来改变存储元件的存储状态。 另外,多个存储元件可以并联耦合以形成存储模块。 存储模块的每个存储元件可以包括各自形成在不同导电层中的多个存储部分。 存储元件可以存储用于形成半导体器件的掩模集的版本号。 或者,在衬底上形成导电层,并且在导电层中形成一个或多个只读存储元件。 每个存储元件形成为预定状态,使得它们共同地存储识别用于形成导电层的掩模的数字值。
    • 7. 发明申请
    • Detection of row-to-row shorts and other row decode defects in memory devices
    • 检测存储器件中的行到行短路和其他行解码缺陷
    • US20080074934A1
    • 2008-03-27
    • US11986235
    • 2007-11-20
    • Daniel DoyleMichael Shore
    • Daniel DoyleMichael Shore
    • G11C7/00G11C8/00
    • G11C29/024G11C29/02G11C29/025G11C2029/1202
    • A system and method to detect row-to-row shorts and other row decode defects in memory devices and other electronic devices having a similar data storage functionality is disclosed. A selective switching between a normal large pull-up device and a smaller one in a wordline driver path allows limiting the current in the pull-up circuit to a low value so as to detect shorts because the shorts will cause the active wordline voltage level to drop, while a wordline without shorts will operate well. A GIDL (Gate Induced Drain Leakage) reduction circuit may be used as a pull-up circuit connected to supply a bias voltage to the wordline driver associated with a wordline being tested for shorts or other defects. A test signal may be selectively generated during testing so as to supply a lower strength voltage output of the GIDL circuit (the VccpRDec output) as the bias voltage to the wordline driver. The test signal, when latched, may limit the Vccp current (by generating VccpRDec) to the row to be tested so as to detect row-to-row shorts without disturbing the VNWL (negative wordline voltage) and to reduce unnecessary stress and the P-channel breakdown in the row decodes during burn-in testing of a memory chip. Because of the rules governing abstracts, this abstract should not be used to construe the claims.
    • 公开了一种用于检测具有相似数据存储功能的存储器件和其他电子设备中的行到行短路和其他行解码缺陷的系统和方法。 在正常的大上拉器件和字线驱动器通路中的较小的上拉器件之间的选择性切换允许将上拉电路中的电流限制为低值,以便检测短路,因为短路将使有源字线电压电平 而没有短裤的字线将运行良好。 可以使用GIDL(栅极引入漏极泄漏)还原电路作为上拉电路,其连接到与被测试的短路或其他缺陷的字线相关联的字线驱动器。 可以在测试期间选择性地产生测试信号,以便将GIDL电路的较低强度电压输出(VccpRDec输出)作为偏置电压提供给字线驱动器。 当锁存时,测试信号可能会将Vccp电流(通过产生VccpRDec)限制到要测试的行,以便在不干扰VNWL(负字线电压)的情况下检测行到行的短路,并减少不必要的应力,而P 在存储器芯片的老化测试期间,行中的通道故障解码。 由于管理摘要的规则,本摘要不应用于解释索赔。
    • 8. 发明授权
    • Combination column redundancy system for a memory array
    • 存储阵列的组合列冗余系统
    • US07251173B2
    • 2007-07-31
    • US11195878
    • 2005-08-02
    • Aron LundeMichael Shore
    • Aron LundeMichael Shore
    • G11C7/00
    • G11C29/81G11C29/808G11C29/846
    • A column redundancy system combining at least two different redundancy systems to provide local redundant memory and shared redundant memory. The column redundancy system includes a plurality of sets of local redundant columns memory, each set of local redundant columns of memory is associated with a corresponding one of a plurality of memory sub-arrays. The columns of memory of the sets of local redundant columns of memory are adapted to replace defective columns of memory of the respective memory sub-arrays. The column redundancy system further includes columns of shared redundant memory that are adapted to replace defective columns of memory of the plurality of memory sub-arrays.
    • 列冗余系统组合至少两个不同的冗余系统,以提供本地冗余存储器和共享冗余存储器。 列冗余系统包括多组本地冗余列存储器,每组存储器的本地冗余列与多个存储器子阵列中的相应一个存储器子阵列相关联。 存储器组的本地冗余列的存储器列适于替换相应存储器子阵列的存储器的有缺陷的列。 列冗余系统还包括适于替换多个存储器子阵列的存储器的有缺陷的列的共享冗余存储器列。