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1. 发明授权

US06732566B2 Device for side impact detection in a motor vehicle 失效
标题翻译：机动车辆侧面碰撞检测装置
公开(公告)号：US06732566B2
公开(公告)日：2004-05-11
申请号：US10238103
申请日：2002-09-09
申请人： Michael Roelleke , Pascal Kocher , Rolf-Juergen Recknagel , Rolf Aidam
发明人： Michael Roelleke , Pascal Kocher , Rolf-Juergen Recknagel , Rolf Aidam
IPC分类号： G01M700
CPC分类号： B60R21/013 , B60R2021/0006 , B60R2021/0119
摘要： A device for side impact detection in a motor vehicle, and a plausibility sensor side impact detection. This plausibility sensor is located in a loudspeaker which is already present in the lateral part for playback of music. This loudspeaker is used as a low-frequency microphone, a circuit being provided for the loudspeaker to differentiate between sound and rapid fluctuations in air pressure. This circuit has a bridge circuit, the differential voltage across the bridge then being used as a plausibility signal. The circuit itself is preferably located in the door.
摘要翻译：用于机动车辆中侧面碰撞检测的装置，以及合理性传感器侧冲击检测。这种真实性传感器位于已经存在于侧面部分中用于播放音乐的扬声器中。该扬声器用作低频麦克风，提供用于扬声器的电路以区分声压和空气压力的快速波动。该电路具有桥接电路，桥上的差分电压被用作合理的信号。电路本身优选位于门中。

2. 发明授权

US07445072B2 Vehicle upfront sensor 失效
标题翻译：车辆前端传感器
公开(公告)号：US07445072B2
公开(公告)日：2008-11-04
申请号：US10504232
申请日：2002-09-23
申请人： Bernhard Mattes , Thomas Herrmann , Rolf-Juergen Recknagel , Rolf Aidam
发明人： Bernhard Mattes , Thomas Herrmann , Rolf-Juergen Recknagel , Rolf Aidam
IPC分类号： B60K28/10
CPC分类号： B60R21/0136
摘要： A vehicle upfront sensor is described that has a cavity and a sensing element therein. A collision is detected as a function of the deformation of the cavity. The sensing element may be designed as a pressure or temperature sensor, the cavity then being largely closed, so that an adiabatic pressure or temperature increase is measurable.
摘要翻译：描述了在其中具有空腔和感测元件的车辆前端传感器。作为空腔的变形的函数检测到碰撞。感测元件可以被设计为压力或温度传感器，然后空腔被大量关闭，使得绝热压力或温度增加是可测量的。

3. 发明申请

US20050116817A1 Front sensor of a vehicle 失效
标题翻译：车辆的前传感器
公开(公告)号：US20050116817A1
公开(公告)日：2005-06-02
申请号：US10504232
申请日：2002-09-23
申请人： Bernhard Mattes , Thomas Herrmann , Rolf-Juergen Recknagel , Rolf Aidam
发明人： Bernhard Mattes , Thomas Herrmann , Rolf-Juergen Recknagel , Rolf Aidam
IPC分类号： G01L5/00 , B60R21/00 , B60R21/01 , B60Q1/00
CPC分类号： B60R21/0136
摘要： A vehicle upfront sensor is described that has a cavity and a sensing element therein. A collision is detected as a function of the deformation of the cavity. The sensing element may be designed as a pressure or temperature sensor, the cavity then being largely closed, so that an adiabatic pressure or temperature increase is measurable.
摘要翻译：描述了在其中具有空腔和感测元件的车辆前端传感器。作为空腔的变形的函数检测到碰撞。感测元件可以被设计为压力或温度传感器，然后空腔被大量关闭，使得绝热压力或温度增加是可测量的。

4. 发明授权

US07246028B2 Method for transmitting data from sensor to a control unit, and a corresponding sensor and control unit 有权
标题翻译：从传感器向控制单元发送数据的方法，以及相应的传感器和控制单元
公开(公告)号：US07246028B2
公开(公告)日：2007-07-17
申请号：US10477314
申请日：2002-09-24
申请人： Jens Otterbach , Christian Ohl , Pascal Kocher , Gerald Nitsche , Jochen Schomacker , Michael Ulmer , Rolf Aidam , Boris Adam
发明人： Jens Otterbach , Christian Ohl , Pascal Kocher , Gerald Nitsche , Jochen Schomacker , Michael Ulmer , Rolf Aidam , Boris Adam
IPC分类号： G06F15/00
CPC分类号： G08C19/02
摘要： A method of data transmission from a sensor to a control unit and a sensor and control unit are described, the sensor transmitting both differential values and absolute values. The differential values are analyzed in the control unit to perform the function provided, and the absolute values are analyzed for the plausibility check of the function.
摘要翻译：描述了从传感器到控制单元以及传感器和控制单元的数据传输方法，传感器传输差分值和绝对值。在控制单元中分析差分值以执行所提供的功能，并分析绝对值以查看功能的合理性。

5. 发明授权

US08872233B2 Semiconductor structure 有权
标题翻译：半导体结构
公开(公告)号：US08872233B2
公开(公告)日：2014-10-28
申请号：US13419583
申请日：2012-03-14
申请人： Taek Lim , Rolf Aidam , Lutz Kirste , Ruediger Quay
发明人： Taek Lim , Rolf Aidam , Lutz Kirste , Ruediger Quay
IPC分类号： H01L29/66 , H01L21/338 , H01L29/778 , H01L27/06
CPC分类号： H01L29/778 , H01L27/0605 , H01L29/2003 , H01L29/66431 , H01L29/7786
摘要： A semiconductor structure includes a barrier layer, a spacer structure, and a channel layer. The barrier layer includes a group III nitride. The spacer structure includes first and second aluminum nitride layers and an intermediate layer. The intermediate layer includes a group III nitride and is between the first and second aluminum nitride layers. The intermediate layer has a first free charge carrier density at an interface with the second aluminum nitride layer. The spacer structure is between the barrier layer and the channel layer. The channel layer includes a group III nitride and has a second free charge carrier density at an interface with the first aluminum nitride layer of the spacer structure. The first aluminum nitride layer, the intermediate layer, and the second aluminum nitride layer have layer thicknesses so the first free charge carrier density is less than 10% of the second free charge carrier density.
摘要翻译：半导体结构包括阻挡层，间隔结构和沟道层。阻挡层包括III族氮化物。间隔结构包括第一和第二氮化铝层和中间层。中间层包括III族氮化物，并且位于第一和第二氮化铝层之间。中间层在与第二氮化铝层的界面处具有第一自由电荷载流子密度。间隔结构位于阻挡层和通道层之间。沟道层包括III族氮化物，并且在与间隔物结构的第一氮化铝层的界面处具有第二自由电荷载流子密度。第一氮化铝层，中间层和第二氮化铝层具有层厚度，使得第一自由载流子密度小于第二自由电荷载流子密度的10％。

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