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1. 发明申请

US20080227115A1 Inhibition of cancer metastasis 失效
标题翻译：抑制癌转移
公开(公告)号：US20080227115A1
公开(公告)日：2008-09-18
申请号：US12004696
申请日：2007-12-21
申请人： Michael Karin , Jun-Li Luo , Wei Tan
发明人： Michael Karin , Jun-Li Luo , Wei Tan
IPC分类号： C12Q1/48 , G01N33/573
CPC分类号： G01N33/574 , G01N2333/91215 , G01N2500/10
摘要： The present invention relates to compositions and methods for cancer diagnosis, treatment and drug screening. In particular, the present invention provides compositions and methods for targeting the nuclear translocation of IkB kinase-α (IKKα) and the IKKα-mediated suppression of Maspin expression observed in metastatic prostate cancer cells.
摘要翻译：本发明涉及癌症诊断，治疗和药物筛选的组合物和方法。特别地，本发明提供用于靶向IkB激酶-α（IKKalpha）的核易位和IKKα介导的转移性前列腺癌细胞中观察到的Maspin表达的抑制的组合物和方法。

2. 发明授权

US07695921B2 Method for detecting the presence of prostate cancer 失效
标题翻译：检测前列腺癌存在的方法
公开(公告)号：US07695921B2
公开(公告)日：2010-04-13
申请号：US12004696
申请日：2007-12-21
申请人： Michael Karin , Jun-Li Luo , Wei Tan
发明人： Michael Karin , Jun-Li Luo , Wei Tan
IPC分类号： G01N33/53 , C07K14/00
CPC分类号： G01N33/574 , G01N2333/91215 , G01N2500/10
摘要： The present invention relates to compositions and methods for cancer diagnosis, treatment and drug screening. In particular, the present invention provides compositions and methods for targeting the nuclear translocation of IkB kinase-α (IKKα) and the IKKα-mediated suppression of Maspin expression observed in metastatic prostate cancer cells.
摘要翻译：本发明涉及癌症诊断，治疗和药物筛选的组合物和方法。特别地，本发明提供靶向转移性前列腺癌细胞中观察到的IkB激酶-α（IKKα）的核易位和IKKα介导的Maspin表达抑制的组合物和方法。

3. 发明授权

US09950393B2 Hybrid low metal loading flux 有权
公开(公告)号：US09950393B2
公开(公告)日：2018-04-24
申请号：US13976001
申请日：2011-12-23
申请人： Rajen S. Sidhu , Martha A. Dudek , James C. Matayabas, Jr. , Michelle S. Phen , Wei Tan
发明人： Rajen S. Sidhu , Martha A. Dudek , James C. Matayabas, Jr. , Michelle S. Phen , Wei Tan
IPC分类号： B23K35/02 , B23K35/362 , H01L23/00 , H05K3/34 , H01L23/488 , H01L23/498 , H01L21/48
CPC分类号： B23K35/025 , B23K35/362 , H01L21/4853 , H01L23/488 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0381 , H01L2224/03828 , H01L2224/03829 , H01L2224/03849 , H01L2224/0401 , H01L2224/05794 , H01L2224/058 , H01L2224/05809 , H01L2224/05811 , H01L2224/05813 , H01L2224/05817 , H01L2224/05839 , H01L2224/05844 , H01L2224/11334 , H01L2224/11848 , H01L2224/11849 , H01L2224/119 , H01L2224/131 , H01L2924/00014 , H01L2924/01049 , H01L2924/3511 , H01L2924/3841 , H05K3/3489 , H05K2203/041 , H05K2203/046 , H01L2924/014 , H01L2924/01032 , H01L2924/01105 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2924/0103 , H01L2924/01083
摘要： Flux formulations and solder attachment during the fabrication of electronic device assemblies are described. One flux formation includes a flux component and a metal particle component, the metal particle component being present in an amount of from 5 to 35 volume percent of the flux formulation. In one feature of certain embodiments, the metal particle component includes solder particles. Other embodiments are described and claimed.

4. 发明授权

US08942787B2 Soft field tomography system and method 有权
标题翻译：软磁场断层扫描系统及方法
公开(公告)号：US08942787B2
公开(公告)日：2015-01-27
申请号：US13316514
申请日：2011-12-11
申请人： Wei Tan , Alexander Seth Ross , Veera Venkata Lakshmi Rajesh Langoju , Ran Niu , Zhilin Wu , Weihua Gao
发明人： Wei Tan , Alexander Seth Ross , Veera Venkata Lakshmi Rajesh Langoju , Ran Niu , Zhilin Wu , Weihua Gao
IPC分类号： A61B5/05
CPC分类号： A61B5/0536 , A61B5/0073 , A61B5/0522 , G06F17/5018
摘要： An iteration method for computing a distribution of one or more properties within an object comprises defining a first mesh of the object, applying an excitation to the object, computing a response of the object to the applied excitation, obtaining a reference response of the object corresponding to the applied excitation, computing a distribution of one or more properties of the object, and updating at least a subset of the nodes of the first mesh to form an updated mesh of the object. The distribution of one or more properties of the object is computed using the computed response, the reference response, and the first mesh. The first mesh includes a plurality of nodes and elements. A connectivity relationship of the subset of the nodes in the updated mesh remains the same as in the first mesh.
摘要翻译：用于计算对象内的一个或多个属性的分布的迭代方法包括定义对象的第一网格，向对象应用激励，计算对象对所施加的激励的响应，获得对象的参考响应计算所述对象的一个或多个属性的分布，以及更新所述第一网格的所述节点的至少一个子集以形成所述对象的更新的网格。使用计算的响应，参考响应和第一个网格来计算对象的一个或多个属性的分布。第一网格包括多个节点和元素。更新后的网格中节点子集的连接关系与第一个网格保持相同。

5. 发明授权

US08895365B2 Techniques and configurations for surface treatment of an integrated circuit substrate 有权
标题翻译：用于表面处理集成电路基板的技术和配置
公开(公告)号：US08895365B2
公开(公告)日：2014-11-25
申请号：US13601788
申请日：2012-08-31
申请人： Suriyakala Ramalingam , Rajen S. Sidhu , Nisha Ananthakrishnan , Sivakumar Nagarajan , Wei Tan , Sandeep Razdan , Vipul V. Mehta
发明人： Suriyakala Ramalingam , Rajen S. Sidhu , Nisha Ananthakrishnan , Sivakumar Nagarajan , Wei Tan , Sandeep Razdan , Vipul V. Mehta
IPC分类号： H01L21/00
CPC分类号： H01L23/49816 , H01L21/563 , H01L23/49894 , H01L2224/16225 , H01L2224/26175 , H01L2224/32225 , H01L2224/73204 , H01L2224/92125 , H01L2924/15311 , Y10T29/49146 , H01L2924/00012 , H01L2924/00
摘要： Embodiments of the present disclosure are directed towards techniques and configurations for surface treatment of an integrated circuit (IC) substrate. In one embodiment, an apparatus includes an integrated circuit substrate, an interconnect structure disposed on the integrated circuit substrate, the interconnect structure being configured to route electrical signals to or from the integrated circuit substrate and comprising a metal surface, and a protective layer disposed on the metal surface of the interconnect structure, the protective layer comprising a first functional group bonded with the metal surface and a second functional group bonded with the first functional group, wherein the second functional group is hydrophobic to inhibit contamination of the metal surface by hydrophilic materials and further inhibits oxidation of the metal surface. Other embodiments may be described and/or claimed.
摘要翻译：本公开的实施例涉及用于集成电路（IC）衬底的表面处理的技术和配置。在一个实施例中，一种装置包括集成电路基板，布置在集成电路基板上的互连结构，所述互连结构被配置为将电信号传送到集成电路基板或从集成电路基板引出并包括金属表面，以及保护层所述互连结构的金属表面，所述保护层包含与所述金属表面接合的第一官能团和与所述第一官能团键合的第二官能团，其中所述第二官能团是疏水性的，以抑制由亲水材料污染所述金属表面并进一步抑制金属表面的氧化。可以描述和/或要求保护其他实施例。

6. 发明申请

US20140084461A1 FLUX MATERIALS FOR HEATED SOLDER PLACEMENT AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS 有权
标题翻译：用于加热焊接配件的通量材料及相关技术和配置
公开(公告)号：US20140084461A1
公开(公告)日：2014-03-27
申请号：US13626869
申请日：2012-09-25
申请人： Rajen S. Sidhu , Martha A. Dudek , Wei Tan
发明人： Rajen S. Sidhu , Martha A. Dudek , Wei Tan
IPC分类号： H01L23/492 , B23K35/362 , H01L21/28
CPC分类号： B23K35/362 , B23K35/0244 , B23K35/3612 , H01L21/4853 , H01L23/49816 , H01L2224/16225
摘要： Embodiments of the present disclosure are directed towards flux materials for heated solder placement and associated techniques and configurations. In one embodiment, a method includes depositing a flux material on one or more pads of a package substrate, the flux material including a rosin material and a thixotropic agent and depositing one or more solder balls on the flux material disposed on the one or more pads, wherein depositing the one or more solder balls on the flux material is performed at a temperature greater than 80° C., and wherein the rosin material and the thixotropic agent are configured to resist softening at the temperature greater than 80° C. Other embodiments may be described and/or claimed.
摘要翻译：本公开的实施例涉及用于加热的焊料放置和相关联的技术和构造的助焊剂材料。在一个实施例中，一种方法包括在封装基板的一个或多个焊盘上沉积焊剂材料，焊剂材料包括松香材料和触变剂，并且将一个或多个焊球沉积在设置在一个或多个焊盘上的焊剂材料上其中将所述一个或多个焊球沉积在所述焊剂材料上在大于80℃的温度下进行，并且其中所述松香材料和所述触变剂构造成在大于80℃的温度下抵抗软化。其它实施方案可以被描述和/或要求保护。

7. 发明申请

US20140061902A1 TECHNIQUES AND CONFIGURATIONS FOR SURFACE TREATMENT OF AN INTEGRATED CIRCUIT SUBSTRATE 有权
标题翻译：集成电路基板的表面处理技术和配置
公开(公告)号：US20140061902A1
公开(公告)日：2014-03-06
申请号：US13601788
申请日：2012-08-31
申请人： Suriyakala Ramalingam , Rajen S. Sidhu , Nisha Ananthakrishnan , Sivakumar Nagarajan , Wei Tan , Sandeep Razdan , Vipul V. Mehta
发明人： Suriyakala Ramalingam , Rajen S. Sidhu , Nisha Ananthakrishnan , Sivakumar Nagarajan , Wei Tan , Sandeep Razdan , Vipul V. Mehta
IPC分类号： H01L23/498 , H01L21/28 , H01L21/50 , H01L23/48
CPC分类号： H01L23/49816 , H01L21/563 , H01L23/49894 , H01L2224/16225 , H01L2224/26175 , H01L2224/32225 , H01L2224/73204 , H01L2224/92125 , H01L2924/15311 , Y10T29/49146 , H01L2924/00012 , H01L2924/00
摘要： Embodiments of the present disclosure are directed towards techniques and configurations for surface treatment of an integrated circuit (IC) substrate. In one embodiment, an apparatus includes an integrated circuit substrate, an interconnect structure disposed on the integrated circuit substrate, the interconnect structure being configured to route electrical signals to or from the integrated circuit substrate and comprising a metal surface, and a protective layer disposed on the metal surface of the interconnect structure, the protective layer comprising a first functional group bonded with the metal surface and a second functional group bonded with the first functional group, wherein the second functional group is hydrophobic to inhibit contamination of the metal surface by hydrophilic materials and further inhibits oxidation of the metal surface. Other embodiments may be described and/or claimed.
摘要翻译：本公开的实施例涉及用于集成电路（IC）衬底的表面处理的技术和配置。在一个实施例中，一种装置包括集成电路基板，布置在集成电路基板上的互连结构，所述互连结构被配置为将电信号传送到集成电路基板或从集成电路基板引出并包括金属表面，以及保护层所述互连结构的金属表面，所述保护层包含与所述金属表面接合的第一官能团和与所述第一官能团键合的第二官能团，其中所述第二官能团是疏水性的，以抑制由亲水材料污染所述金属表面并进一步抑制金属表面的氧化。可以描述和/或要求保护其他实施例。

8. 发明申请

US20130341379A1 HYBRID LOW METAL LOADING FLUX 有权
标题翻译：混合低金属载荷
公开(公告)号：US20130341379A1
公开(公告)日：2013-12-26
申请号：US13976001
申请日：2011-12-23
申请人： Rajen S. Sidhu , Martha A. Dudek , James C. Matayabas , Michelle S. Phen , Wei Tan
发明人： Rajen S. Sidhu , Martha A. Dudek , James C. Matayabas , Michelle S. Phen , Wei Tan
IPC分类号： B23K35/02 , B23K35/362
CPC分类号： B23K35/025 , B23K35/362 , H01L21/4853 , H01L23/488 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0381 , H01L2224/03828 , H01L2224/03829 , H01L2224/03849 , H01L2224/0401 , H01L2224/05794 , H01L2224/058 , H01L2224/05809 , H01L2224/05811 , H01L2224/05813 , H01L2224/05817 , H01L2224/05839 , H01L2224/05844 , H01L2224/11334 , H01L2224/11848 , H01L2224/11849 , H01L2224/119 , H01L2224/131 , H01L2924/00014 , H01L2924/01049 , H01L2924/3511 , H01L2924/3841 , H05K3/3489 , H05K2203/041 , H05K2203/046 , H01L2924/014 , H01L2924/01032 , H01L2924/01105 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2924/0103 , H01L2924/01083
摘要： Flux formulations and solder attachment during the fabrication of electronic device assemblies are described. One flux formation includes a flux component and a metal particle component, the metal particle component being present in an amount of from 5 to 35 volume percent of the flux formulation. In one feature of certain embodiments, the metal particle component includes solder particles. Other embodiments are described and claimed.
摘要翻译：描述了在制造电子器件组件期间的焊剂配方和焊料附着。一种助熔剂组合包括助熔剂组分和金属颗粒组分，金属颗粒组分的存在量为助熔剂配方的5-35体积％。在某些实施方案的一个特征中，金属颗粒组分包括焊料颗粒。描述和要求保护其他实施例。

9. 发明授权

US08514586B2 Positioning structure for expansion card 失效
标题翻译：扩展卡的定位结构
公开(公告)号：US08514586B2
公开(公告)日：2013-08-20
申请号：US13211747
申请日：2011-08-17
申请人： Wei Tan
发明人： Wei Tan
IPC分类号： H05K7/14 , H05K7/18
CPC分类号： G06F1/186
摘要： A positioning structure is used for mounting a expansion card to a printed circuit board. The positioning structure includes a first plate, a second plate and a connecting plate connected between the first plate and the second plate. The first plate defines a slot. The second plate defines an opening. The first plate is selectively mounted to different positions of the circuit board by the slot, and the second plate is selectively mounted to different positions of the expansion card by the opening.
摘要翻译：使用定位结构将扩展卡安装到印刷电路板上。定位结构包括第一板，第二板和连接在第一板和第二板之间的连接板。第一个板定义一个槽。第二板限定开口。第一板通过槽选择性地安装到电路板的不同位置，并且第二板通过开口选择性地安装到扩展卡的不同位置。

10. 发明申请

US20110266968A1 METHOD AND DEVICE FOR OBTAINING CONDUCTION ANGLE, METHOD AND DEVICE FOR DRIVING LED 有权
标题翻译：用于获取导电角的方法和装置，用于驱动LED的方法和装置
公开(公告)号：US20110266968A1
公开(公告)日：2011-11-03
申请号：US13097143
申请日：2011-04-29
申请人： Luca Bordin , Yuli Chen , Shijun Nie , Wei Tan
发明人： Luca Bordin , Yuli Chen , Shijun Nie , Wei Tan
IPC分类号： H05B37/02
CPC分类号： H05B33/0815 , Y02B20/346
摘要： In various embodiments, a method for obtaining a conduction angle of a trailing edge dimmer is provided. The method may include determining a time point t0 when the trailing edge dimmer starts to be conductive; determining an earliest time point t1 when a deviation from an ideal waveform appears; and determining the conduction angle t1-t0 of the trailing edge dimmer based on the earliest time point t1 when the deviation from the ideal waveform appears and the time point t0 when the trailing edge dimmer starts to be conductive.
摘要翻译：在各种实施例中，提供了一种用于获得后缘调光器的导通角的方法。该方法可以包括当后沿调光器开始导通时确定时间点t0; 当出现与理想波形的偏差时，确定最早的时间点t1; 并且当出现与理想波形的偏离时的最早时间点t1和后沿调光器开始导通的时间点t0时，确定后沿调光器的导通角t1-t0。

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