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    • 1. 发明授权
    • Deposition systems and susceptor assemblies for depositing a film on a substrate
    • 用于在衬底上沉积膜的沉积系统和感受器组件
    • US08430960B2
    • 2013-04-30
    • US11512800
    • 2006-08-29
    • Joseph John SumakerisMichael James PaisleyMichael John O'Loughlin
    • Joseph John SumakerisMichael James PaisleyMichael John O'Loughlin
    • C23C16/455C23C16/458C23C16/46C23C16/507C23F1/00H01L21/306C23C16/06C23C16/22
    • C23C16/45519C23C16/4401C23C16/455C23C16/488
    • Parasitic deposits are controlled in a deposition system for depositing a film on a substrate, the deposition system of the type defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber. Such control is provided by flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas. A deposition system for depositing a film on a substrate using a process gas includes a reaction chamber adapted to receive the substrate and the process gas. The system further includes an interior surface contiguous with the reaction chamber. A buffer gas supply system is adapted to supply a flow of a buffer gas between the interior surface and at least a portion of the process gas such that the flow of the buffer gas forms a gas barrier layer to inhibit contact between the interior surface and components of the process gas when the process gas is disposed in the reaction chamber.
    • 寄生沉积物在用于在基底上沉积膜的沉积系统中进行控制,所述沉积系统的类型限定用于接收基底的反应室,并且在反应室中包括处理气体和与反应室邻接的内表面。 通过在内表面和至少一部分处理气体之间流动缓冲气体以形成阻气层来提供这种控制,使得气体阻隔层抑制处理气体的内表面和组分之间的接触。 用于使用工艺气体在衬底上沉积膜的沉积系统包括适于接收衬底和工艺气体的反应室。 该系统还包括与反应室邻接的内表面。 缓冲气体供应系统适于在内表面和处理气体的至少一部分之间提供缓冲气体流,使得缓冲气体的流动形成阻气层,以阻止内表面和部件之间的接触 当处理气体设置在反应室中时,该工艺气体。