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1. 发明授权

US06939950B2 Bovine tumor necrosis factor receptor-1 and methods of use 失效
标题翻译：牛肿瘤坏死因子受体-1及其使用方法
公开(公告)号：US06939950B2
公开(公告)日：2005-09-06
申请号：US09970532
申请日：2001-10-03
申请人： Michael J. Taylor , Marcus E. Kehrli, Jr. , Eun-Kyung Lee , Simon Mwangi
发明人： Michael J. Taylor , Marcus E. Kehrli, Jr. , Eun-Kyung Lee , Simon Mwangi
IPC分类号： C07K14/705 , C07K14/715 , C07H21/04
CPC分类号： C07K14/70575
摘要： The invention relates to nucleic acid sequences encoding a bovine tumor necrosis factor receptor-I (TNF-RI). Also within the invention is a soluble bovine TNF-RI, which is a potent inhibitor of bovine tumor necrosis factor-α (TNF-α). The invention demonstrates that soluble bovine TNF-RI has therapeutic value as an inhibitor of TNF in cattle suffering from coliform mastitis or other inflammatory disease.
摘要翻译：本发明涉及编码牛肿瘤坏死因子受体-I（TNF-RI）的核酸序列。本发明还有一种可溶性牛TNF-RI，其是牛肿瘤坏死因子-α（TNF-α）的有效抑制剂。本发明表明，可溶性牛TNF-RI具有作为大肠杆菌性乳腺炎或其它炎性疾病的牛的TNF抑制剂的治疗价值。

2. 发明授权

US06406907B1 Bovine tumor necrosis factor receptor-1 and methods of use 失效
标题翻译：牛肿瘤坏死因子受体-1及其使用方法
公开(公告)号：US06406907B1
公开(公告)日：2002-06-18
申请号：US09513007
申请日：2000-02-25
申请人： Michael J. Taylor , Marcus E. Kehrli, Jr. , Eun-Kyung Lee
发明人： Michael J. Taylor , Marcus E. Kehrli, Jr. , Eun-Kyung Lee
IPC分类号： C07H2104
CPC分类号： C07K14/70575
摘要： The invention relates to nucleic acid sequences encoding a bovine tumor necrosis factor receptor-I (TNF-RI). Also within the invention is a soluble bovine TNF-RI, which is a potent inhibitor of bovine tumor necrosis factor-&agr; (TNF-&agr;). The invention demonstrates that soluble bovine TNF-RI has therapeutic value as an inhibitor of TNF in cattle suffering from coliform mastitis or other inflammatory disease.
摘要翻译：本发明涉及编码牛肿瘤坏死因子受体-I（TNF-RI）的核酸序列。本发明还有一种可溶性牛TNF-RI，其是牛肿瘤坏死因子-α（TNF-α）的有效抑制剂。本发明表明，可溶性牛TNF-RI具有作为大肠杆菌性乳腺炎或其它炎性疾病的牛的TNF抑制剂的治疗价值。

3. 发明授权

US09077974B2 3D video-teleconferencing apparatus capable of eye contact and method using the same 有权
标题翻译：能够接触眼睛的3D视讯会议装置及其使用方法
公开(公告)号：US09077974B2
公开(公告)日：2015-07-07
申请号：US13885998
申请日：2012-07-06
申请人： Bum-Jae You , Eun-Kyung Lee , Ji-Yong Lee , Jai-Hi Cho , Shin-Young Kim
发明人： Bum-Jae You , Eun-Kyung Lee , Ji-Yong Lee , Jai-Hi Cho , Shin-Young Kim
IPC分类号： H04N7/14 , H04N13/02
CPC分类号： H04N13/204 , H04N7/142 , H04N7/144 , H04N13/239 , H04N13/271
摘要： Disclosed herein is a 3D teleconferencing apparatus and method enabling eye contact. The 3D teleconferencing apparatus enabling eye contact according to the present invention includes an image acquisition unit for acquiring depth images and color images by manipulating cameras in real time in consideration of images obtained by capturing a subject that is a teleconference participant and images received over a network and corresponding to a counterpart involved in the teleconference; a full face generation unit for generating a final depth image and a final color image corresponding to a full face of the participant for eye contact using the depth images and the color images; and a 3D image generation unit for generating a 3D image corresponding to the counterpart and displaying the 3D image on a display device.
摘要翻译：这里公开了一种能够进行眼神接触的3D电话会议装置和方法。根据本发明的能够进行眼睛接触的3D电话会议装置包括：图像获取单元，用于通过考虑通过捕获作为电话会议参与者的对象和通过网络接收的图像获得的图像实时地操纵相机来获取深度图像和彩色图像并对应于参与电话会议的对方; 全面部生成单元，用于使用深度图像和彩色图像生成对应于参与者的全脸的最终深度图像和最终彩色图像; 以及3D图像生成单元，用于生成与对方相对应的3D图像，并在显示装置上显示3D图像。

4. 发明授权

US07253491B2 Silicon light-receiving device 失效
标题翻译：硅光接收装置
公开(公告)号：US07253491B2
公开(公告)日：2007-08-07
申请号：US10502765
申请日：2002-10-16
申请人： Eun-Kyung Lee , Byoung-Lyong Choi , Jun-Young Kim
发明人： Eun-Kyung Lee , Byoung-Lyong Choi , Jun-Young Kim
IPC分类号： H01L31/06 , H01L27/14 , H01L31/00
CPC分类号： H01L31/028 , H01L31/035281 , H01L31/068 , H01L31/103 , Y02E10/547
摘要： A silicon light-receiving device is provided. In the device, a substrate is based on n-type or p-type silicon. A doped region is ultra-shallowly doped with the opposite type dopant to the dopant type of the substrate on one side of the substrate so that a photoelectric conversion effect for light in a wavelength range of 100-1100 nm is generated by a quantum confinement effect in the p-n junction with the substrate. First and second electrodes are formed on the substrate so as to be electrically connected to the doped region. Due to the ultra-shallow doped region on the silicon substrate, a quantum confinement effect is generated in the p-n junction. Even though silicon is used as a semiconductor material, the quantum efficiency of the silicon light-receiving device is far higher than that of a conventional solar cell, owing to the quantum confinement effect. The silicon light-receiving device can also be formed to absorb light in a particular or large wavelength band, and used as a solar cell.
摘要翻译：提供硅光接收装置。在该器件中，衬底基于n型或p型硅。掺杂区域在衬底的一侧上与衬底的掺杂剂类型相反的掺杂剂超浅掺杂，使得通过量子限制效应产生在100-1100nm的波长范围内的光的光电转换效应在与基板的pn结中。第一和第二电极形成在衬底上，以便与掺杂区电连接。由于硅衬底上的超浅掺杂区域，在p-n结中产生量子限制效应。即使使用硅作为半导体材料，由于量子限制效应，硅光接收装置的量子效率远远高于常规太阳能电池的量子效率。硅光接收装置也可以形成为吸收特定或大波长带中的光，并用作太阳能电池。

5. 发明申请

US20120161159A9 Method of manufacturing silicon optoelectronic device,silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device 有权
标题翻译：制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及使用硅光电子器件的图像输入和/或输出装置
公开(公告)号：US20120161159A9
公开(公告)日：2012-06-28
申请号：US10758136
申请日：2004-01-16
申请人： Eun-Kyung Lee , Byoung-lyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
发明人： Eun-Kyung Lee , Byoung-lyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
IPC分类号： H01L21/00 , H01L27/15 , H01L33/00 , H01L31/12
CPC分类号： H01L33/34 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G01Q80/00 , H01L27/14601 , H01L27/14621 , H01L27/14645 , H01L27/14683 , H01L27/156 , H01L31/02363 , H01L31/028 , H01L31/035281 , H01L31/1804 , H01L33/0054 , H01L33/24 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.
摘要翻译：提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

6. 发明申请

US20070108505A1 Gate structure, semiconductor memory device having the gate structure and methods of fabricating the same 审中-公开
标题翻译：门结构，具有栅极结构的半导体存储器件及其制造方法
公开(公告)号：US20070108505A1
公开(公告)日：2007-05-17
申请号：US11594966
申请日：2006-11-09
申请人： Kwang-Soo Seol , Byung-Ki Kim , Eun-Kyung Lee , Yo-Sep Min , Kyung-Sang Cho , Jae-Ho Lee , Jae-Young Choi
发明人： Kwang-Soo Seol , Byung-Ki Kim , Eun-Kyung Lee , Yo-Sep Min , Kyung-Sang Cho , Jae-Ho Lee , Jae-Young Choi
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L29/42332 , B82Y10/00 , H01L29/40114 , H01L29/42348
摘要： A gate structure using nanodots as a trap site, a semiconductor device having the gate structure and methods of fabricating the same are provided. The gate structure may include a tunneling layer, a plurality of nanodots on the tunneling layer, and a control insulating layer including a high-k dielectric layer on the tunneling layer and the nanodots. A semiconductor memory device may further include a semiconductor substrate, the gate structure according to example embodiments on the semiconductor substrate and a first impurity region and a second impurity region in the semiconductor substrate, wherein the gate structure is in contact with the first and second impurity regions.
摘要翻译：提供了使用纳米点作为陷阱位置的栅极结构，具有栅极结构的半导体器件及其制造方法。栅极结构可以包括隧道层，隧道层上的多个纳米点，以及在隧道层和纳米点上包括高k电介质层的控制绝缘层。半导体存储器件还可以包括半导体衬底，半导体衬底上的示例性实施例的栅极结构和半导体衬底中的第一杂质区和第二杂质区，其中栅极结构与第一和第二杂质接触地区。

7. 发明申请

US20050073019A1 Silicon light-receiving device 失效
标题翻译：硅光接收装置
公开(公告)号：US20050073019A1
公开(公告)日：2005-04-07
申请号：US10502765
申请日：2002-10-16
申请人： Eun-Kyung Lee , Byoung-Lyong Choi , Jun-Young Kim
发明人： Eun-Kyung Lee , Byoung-Lyong Choi , Jun-Young Kim
IPC分类号： H01L31/10 , H01L31/028 , H01L31/0352 , H01L31/042 , H01L31/068 , H01L31/103 , H01L31/06
CPC分类号： H01L31/028 , H01L31/035281 , H01L31/068 , H01L31/103 , Y02E10/547
摘要： A silicon light-receiving device is provided. In the device, a substrate is based on n-type or p-type silicon. A doped region is ultra-shallowly doped with the opposite type dopant to the dopant type of the substrate on one side of the substrate so that a photoelectric conversion effect for light in a wavelength range of 100-1100 nm is generated by a quantum confinement effect in the p-n junction with the substrate. First and second electrodes are formed on the substrate so as to be electrically connected to the doped region. Due to the ultra-shallow doped region on the silicon substrate, a quantum confinement effect is generated in the p-n junction. Even though silicon is used as a semiconductor material, the quantum efficiency of the silicon light-receiving device is far higher than that of a conventional solar cell, owing to the quantum confinement effect. The silicon light-receiving device can also be formed to absorb light in a particular or large wavelength band, and used as a solar cell.
摘要翻译：提供硅光接收装置。在该器件中，衬底基于n型或p型硅。掺杂区域在衬底的一侧上与衬底的掺杂剂类型相反的掺杂剂超浅掺杂，使得通过量子限制效应产生在100-1100nm的波长范围内的光的光电转换效应在与基板的pn结中。第一和第二电极形成在衬底上，以便与掺杂区电连接。由于硅衬底上的超浅掺杂区域，在p-n结中产生量子限制效应。即使使用硅作为半导体材料，由于量子限制效应，硅光接收装置的量子效率远远高于常规太阳能电池的量子效率。硅光接收装置也可以形成为吸收特定或大波长带中的光，并用作太阳能电池。

8. 发明申请

US20100309292A1 METHOD AND APPARATUS FOR GENERATING MULTI-VIEWPOINT DEPTH MAP, METHOD FOR GENERATING DISPARITY OF MULTI-VIEWPOINT IMAGE 审中-公开
标题翻译：用于生成多视点深度图的方法和装置，用于生成多视点图像的差异的方法
公开(公告)号：US20100309292A1
公开(公告)日：2010-12-09
申请号：US12745099
申请日：2008-11-28
申请人： Yo-Sung HO , Eun-Kyung Lee , Sung-Yeol Kim
发明人： Yo-Sung HO , Eun-Kyung Lee , Sung-Yeol Kim
IPC分类号： H04N13/02 , G06K9/00
CPC分类号： G06T7/55 , H04N13/261
摘要： There are provided a method and an apparatus for generating a multi-viewpoint depth map, and a method for generating a disparity of a multi-viewpoint image. A method for generating a multi-viewpoint depth map according to the present invention includes the steps of: (a) acquiring a multi-viewpoint image constituted by a plurality of images by using a plurality of cameras (b) acquiring an image and depth information by using a depth camera; (c) estimating coordinates of the same point in a space in the plurality of images by using the acquired depth information; (d) determining disparities in the plurality of images with respect to in the same point by searching a predetermined region around the estimated coordinates; and (e) generating a multi-viewpoint depth map by using the determined disparities. According to the above-mentioned present invention, it is possible to generate a multi-viewpoint depth map within a shorter time and generate a multi-viewpoint depth map having higher quality than a multi-viewpoint depth map generated by using known stereo matching.
摘要翻译：提供了一种用于生成多视点深度图的方法和装置，以及用于产生多视点图像的视差的方法。根据本发明的用于生成多视点深度图的方法包括以下步骤：（a）通过使用多个照相机（b）获取由多个图像构成的多视点图像（b）获取图像和深度信息通过使用深度相机; （c）通过使用获取的深度信息估计多个图像中的空间中的相同点的坐标; （d）通过搜索估计坐标周围的预定区域来确定在相同点上的多个图像中的差异; 和（e）通过使用确定的差异来生成多视点深度图。根据上述本发明，可以在更短的时间内生成多视点深度图，并且生成比通过使用已知的立体匹配产生的多视点深度图具有更高质量的多视点深度图。

9. 发明申请

US20100109074A1 Gate structure, semiconductor memory device having the gate structure and methods of fabricating the same 审中-公开
标题翻译：门结构，具有栅极结构的半导体存储器件及其制造方法
公开(公告)号：US20100109074A1
公开(公告)日：2010-05-06
申请号：US12654029
申请日：2009-12-08
申请人： Kwang-Soo Seol , Byung-Kl Kim , Eun-Kyung Lee , Yo-Sep Min , Kyung-Sang Cho , Jae-Ho Lee , Jae-Young Choi
发明人： Kwang-Soo Seol , Byung-Kl Kim , Eun-Kyung Lee , Yo-Sep Min , Kyung-Sang Cho , Jae-Ho Lee , Jae-Young Choi
IPC分类号： H01L29/792
CPC分类号： H01L29/42332 , B82Y10/00 , H01L29/40114 , H01L29/42348
摘要： A gate structure using nanodots as a trap site, a semiconductor device having the gate structure and methods of fabricating the same are provided. The gate structure may include a tunneling layer, a plurality of nanodots on the tunneling layer, and a control insulating layer including a high-k dielectric layer on the tunneling layer and the nanodots. A semiconductor memory device may further include a semiconductor substrate, the gate structure according to example embodiments on the semiconductor substrate and a first impurity region and a second impurity region in the semiconductor substrate, wherein the gate structure is in contact with the first and second impurity regions.
摘要翻译：提供了使用纳米点作为陷阱位置的栅极结构，具有栅极结构的半导体器件及其制造方法。栅极结构可以包括隧道层，隧道层上的多个纳米点，以及在隧道层和纳米点上包括高k电介质层的控制绝缘层。半导体存储器件还可以包括半导体衬底，半导体衬底上的示例性实施例的栅极结构和半导体衬底中的第一杂质区和第二杂质区，其中栅极结构与第一和第二杂质接触地区。

10. 发明申请

US20070114572A1 Gate structure including multi-tunneling layer and method of fabricating the same, non-volatile memory device and method of fabricating the same 审中-公开
标题翻译：包括多隧道层的栅结构及其制造方法，非易失性存储器件及其制造方法
公开(公告)号：US20070114572A1
公开(公告)日：2007-05-24
申请号：US11600737
申请日：2006-11-17
申请人： Kwang-Soo Seol , Woong-Chul Shin , Byung Kim , Eun-Kyung Lee , Kyung-Sang Cho
发明人： Kwang-Soo Seol , Woong-Chul Shin , Byung Kim , Eun-Kyung Lee , Kyung-Sang Cho
IPC分类号： H01L29/76
CPC分类号： H01L29/42332 , B82Y10/00 , H01L27/115 , H01L29/7881
摘要： Provided is a gate structure including a multi-tunneling layer and method of fabricating the same. Also provided is a nanodot semiconductor memory device including such gate structure and method of fabricating the same. The gate structure may include a first insulation layer, a second insulation layer, a charge storage layer including nanodots and formed on the second insulation layer, a third insulation layer formed on the charge storage layer, and a gate electrode layer formed on the third insulation layer. There may also be a nanodot semiconductor memory device including a semiconductor substrate, in which a first impurity region and a second impurity region may be formed, and including the gate structure formed on the semiconductor substrate which contacts the first and second impurity regions. The second insulation layer may be formed on the first insulation layer and may include a material whose energy level may be lower than an energy level of the conduction band of the first insulation layer and higher an energy level of the valence band of the first insulation layer.
摘要翻译：提供一种包括多隧道层的栅极结构及其制造方法。还提供了包括这种栅极结构的纳米点半导体存储器件及其制造方法。栅极结构可以包括第一绝缘层，第二绝缘层，包括纳米点并形成在第二绝缘层上的电荷存储层，形成在电荷存储层上的第三绝缘层，以及形成在第三绝缘层上的栅电极层层。还可以存在包括可以形成第一杂质区域和第二杂质区域的半导体衬底的纳米点半导体存储器件，并且包括形成在与第一和第二杂质区域接触的半导体衬底上的栅极结构。第二绝缘层可以形成在第一绝缘层上，并且可以包括其能级可以低于第一绝缘层的导带的能级的材料，并且第一绝缘层的价带的能级越高。

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