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1. 发明申请

US20090000660A1 Heterojunction photovoltaic assembled with atomic layer deposition 有权
标题翻译：用原子层沉积组装的异质结光伏
公开(公告)号：US20090000660A1
公开(公告)日：2009-01-01
申请号：US11823789
申请日：2007-06-28
申请人： Michael J. Pellin , Jeffrey W. Elam , Ulrich Welp , Alex B. F. Martinson , Joseph T. Hupp
发明人： Michael J. Pellin , Jeffrey W. Elam , Ulrich Welp , Alex B. F. Martinson , Joseph T. Hupp
IPC分类号： H01L31/0216 , H01L31/0224
CPC分类号： H01G9/2031 , H01G9/2059 , Y02E10/542
摘要： A heterojunction photovoltaic cell. The cell includes a nanoporous substrate, a transparent conducting oxide disposed on the nanoporous substrate, a nanolaminate film deposited on the nanoporous substrate surface, a sensitizer dye disposed on a wide band gap semiconducting oxide and a redox shuttle positioned within the layer structure.
摘要翻译：异质结光伏电池。该电池包括纳米孔基材，设置在纳米多孔基材上的透明导电氧化物，沉积在纳米多孔基材表面上的纳米级胺膜，设置在宽带隙半导体氧化物上的敏化剂染料和位于层结构内的氧化还原梭。

2. 发明授权

US08258398B2 Heterojunction photovoltaic assembled with atomic layer deposition 有权
标题翻译：用原子层沉积组装的异质结光伏
公开(公告)号：US08258398B2
公开(公告)日：2012-09-04
申请号：US11823789
申请日：2007-06-28
申请人： Michael J. Pellin , Jeffrey W. Elam , Ulrich Welp , Alex B. F. Martinson , Joseph T. Hupp
发明人： Michael J. Pellin , Jeffrey W. Elam , Ulrich Welp , Alex B. F. Martinson , Joseph T. Hupp
IPC分类号： H01L31/00
CPC分类号： H01G9/2031 , H01G9/2059 , Y02E10/542
摘要： A heterojunction photovoltaic cell. The cell includes a nanoporous substrate, a transparent conducting oxide disposed on the nanoporous substrate, a nanolaminate film deposited on the nanoporous substrate surface, a sensitizer dye disposed on a wide band gap semiconducting oxide and a redox shuttle positioned within the layer structure.
摘要翻译：异质结光伏电池。该电池包括纳米孔基材，设置在纳米多孔基材上的透明导电氧化物，沉积在纳米多孔基材表面上的纳米级胺膜，设置在宽带隙半导体氧化物上的敏化剂染料和位于层结构内的氧化还原梭。

3. 发明授权

US07709056B2 Synthesis of transparent conducting oxide coatings 有权
标题翻译：透明导电氧化物涂层的合成
公开(公告)号：US07709056B2
公开(公告)日：2010-05-04
申请号：US11804059
申请日：2007-05-16
申请人： Jeffrey W. Elam , Alex B. F. Martinson , Michael J. Pellin , Joseph T. Hupp
发明人： Jeffrey W. Elam , Alex B. F. Martinson , Michael J. Pellin , Joseph T. Hupp
IPC分类号： B05D1/00
CPC分类号： C23C16/407 , C23C16/45527
摘要： A method and system for preparing a light transmitting and electrically conductive oxide film. The method and system includes providing an atomic layer deposition system, providing a first precursor selected from the group of cyclopentadienyl indium, tetrakis (dimethylamino) tin and mixtures thereof, inputting to the deposition system the first precursor for reaction for a first selected time, providing a purge gas for a selected time, providing a second precursor comprised of an oxidizer, and optionally inputting a second precursor into the deposition system for reaction and alternating for a predetermined number of cycles each of the first precursor, the purge gas and the second precursor to produce the oxide film.
摘要翻译：一种制备透光导电氧化膜的方法和系统。该方法和系统包括提供原子层沉积系统，提供选自环戊二烯基铟，四（二甲基氨基）锡及其混合物的第一前体，向沉积系统输入第一前体进行反应第一选定时间，提供提供选定时间的吹扫气体，提供由氧化剂组成的第二前体，以及任选地将第二前体输入到沉积系统中进行反应并交替预定数量的循环，每个循环中的每个第一前体，吹扫气体和第二前体以产生氧化膜。

4. 发明授权

US08741386B2 Atomic layer deposition of quaternary chalcogenides 有权
标题翻译：原子层沉积的四元硫属化物
公开(公告)号：US08741386B2
公开(公告)日：2014-06-03
申请号：US13631135
申请日：2012-09-28
申请人： Elijah J. Thimsen , Shannon C. Riha , Alex B. F. Martinson , Jeffrey W. Elam , Michael J. Pellin
发明人： Elijah J. Thimsen , Shannon C. Riha , Alex B. F. Martinson , Jeffrey W. Elam , Michael J. Pellin
IPC分类号： C23C16/00
CPC分类号： C23C16/305 , C23C16/306 , C23C16/45529 , C23C16/45531 , C23C16/56
摘要： Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu2ZnSnS4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.
摘要翻译：提供了硫族化合物（包括Cu2ZnSnS4）的合成和沉积的方法和系统。二元化合物，例如金属硫化物，可通过将衬底交替暴露于金属阳离子前体和硫族元素阴离子前体之间进行沉积，其间具有吹扫步骤。

5. 发明授权

US09040113B2 Atomic layer deposition of metal sulfide thin films using non-halogenated precursors 有权
标题翻译：使用非卤化前体的金属硫化物薄膜的原子层沉积
公开(公告)号：US09040113B2
公开(公告)日：2015-05-26
申请号：US12780664
申请日：2010-05-14
申请人： Alex B. F. Martinson , Jeffrey W. Elam , Michael J. Pellin
发明人： Alex B. F. Martinson , Jeffrey W. Elam , Michael J. Pellin
IPC分类号： B05D5/12 , H01L21/02 , C23C16/30 , C23C16/455 , H01L31/0224 , H01L31/032 , H01L31/0336 , H01L31/0352 , H01L31/072
CPC分类号： H01L21/0243 , C23C16/305 , C23C16/45553 , H01L21/02557 , H01L21/02568 , H01L21/0262 , H01L31/022425 , H01L31/032 , H01L31/0336 , H01L31/03529 , H01L31/072 , Y02E10/50
摘要： A method for preparing a metal sulfide thin film using ALD and structures incorporating the metal sulfide thin film. The method includes providing an ALD reactor, a substrate, a first precursor comprising a metal and a second precursor comprising a sulfur compound. The first and the second precursors are reacted in the ALD precursor to form a metal sulfide thin film on the substrate. In a particular embodiment, the metal compound comprises Bis(N,N′-di-sec-butylacetamidinato)dicopper(I) and the sulfur compound comprises hydrogen sulfide (H2S) to prepare a Cu2S film. The resulting metal sulfide thin film may be used in among other devices, photovoltaic devices, including interdigitated photovoltaic devices that may use relatively abundant materials for electrical energy production.
摘要翻译：使用ALD制备金属硫化物薄膜的方法和结合金属硫化物薄膜的结构。该方法包括提供ALD反应器，底物，包含金属的第一前体和包含硫化合物的第二前体。第一和第二前体在ALD前体中反应以在基底上形成金属硫化物薄膜。在一个具体实施方案中，金属化合物包括双（N，N'-二仲丁基乙酰胺基）二苯醚（I），硫化合物包含硫化氢（H 2 S）以制备Cu 2 S膜。所得到的金属硫化物薄膜可以用于其他装置中，包括可以使用相对丰富的材料用于电能产生的交叉指向的光伏器件的光伏器件。

6. 发明申请

US20080286448A1 Synthesis of transparent conducting oxide coatings 有权
标题翻译：透明导电氧化物涂层的合成
公开(公告)号：US20080286448A1
公开(公告)日：2008-11-20
申请号：US11804059
申请日：2007-05-16
申请人： Jeffrey W. Elam , Alex B.F. Martinson , Michael J. Pellin , Joseph T. Hupp
发明人： Jeffrey W. Elam , Alex B.F. Martinson , Michael J. Pellin , Joseph T. Hupp
IPC分类号： B05D5/12
CPC分类号： C23C16/407 , C23C16/45527
摘要： A method and system for preparing a light transmitting and electrically conductive oxide film. The method and system includes providing an atomic layer deposition system, providing a first precursor selected from the group of cyclopentadienyl indium, tetrakis (dimethylamino) tin and mixtures thereof, inputting to the deposition system the first precursor for reaction for a first selected time, providing a purge gas for a selected time, providing a second precursor comprised of an oxidizer, and optionally inputting a second precursor into the deposition system for reaction and alternating for a predetermined number of cycles each of the first precursor, the purge gas and the second precursor to produce the oxide film.
摘要翻译：一种制备透光导电氧化膜的方法和系统。该方法和系统包括提供原子层沉积系统，提供选自环戊二烯基铟，四（二甲基氨基）锡及其混合物的第一前体，向沉积系统输入第一前体进行反应第一选定时间，提供提供选定时间的吹扫气体，提供由氧化剂组成的第二前体，以及任选地将第二前体输入到沉积系统中进行反应并交替预定数量的循环，每个循环中的每个第一前体，吹扫气体和第二前体以产生氧化膜。

7. 发明申请

US20140053779A1 MICRO-BALANCE SENSOR INTEGRATED WITH ATOMIC LAYER DEPOSITION CHAMBER 有权
标题翻译：微平衡传感器与原子层沉积室集成
公开(公告)号：US20140053779A1
公开(公告)日：2014-02-27
申请号：US13591498
申请日：2012-08-22
申请人： Alex B. F. Martinson , Joseph A. Libera , Jeffrey W. Elam , Shannon C. Riha
发明人： Alex B. F. Martinson , Joseph A. Libera , Jeffrey W. Elam , Shannon C. Riha
IPC分类号： C23C16/44 , C23C16/50
CPC分类号： C23C16/45525 , C23C16/52
摘要： The invention is directed to QCM measurements in monitoring ALD processes. Previously, significant barriers remain in the ALD processes and accurate execution. To turn this exclusively dedicated in situ technique into a routine characterization method, an integral QCM fixture was developed. This new design is easily implemented on a variety of ALD tools, allows rapid sample exchange, prevents backside deposition, and minimizes both the footprint and flow disturbance. Unlike previous QCM designs, the fast thermal equilibration enables tasks such as temperature-dependent studies and ex situ sample exchange, further highlighting the feasibility of this QCM design for day-to-day use. Finally, the in situ mapping of thin film growth rates across the ALD reactor was demonstrated in a popular commercial tool operating in both continuous and quasi-static ALD modes.
摘要翻译：本发明涉及在监测ALD过程中的QCM测量。此前，ALD流程仍然存在重大障碍，准确执行。将这种专门的原位技术转化为常规表征方法，开发了一个完整的QCM夹具。这种新设计可以在各种ALD工具上轻松实现，允许快速进行样品交换，防止背面沉积，并最大限度地减少占地面积和流量扰动。与以前的QCM设计不同，快速热平衡使得诸如温度依赖性研究和非原位样品交换等任务进一步凸显了该QCM设计的日常使用的可行性。最后，在连续和准静态ALD模式下工作的流行商业工具中，证明了ALD反应器中薄膜生长速率的原位测绘。

8. 发明授权

US09856563B2 Micro-balance sensor integrated with atomic layer deposition chamber 有权
公开(公告)号：US09856563B2
公开(公告)日：2018-01-02
申请号：US13591498
申请日：2012-08-22
申请人： Alex B. F. Martinson , Joseph A. Libera , Jeffrey W. Elam , Shannon C. Riha
发明人： Alex B. F. Martinson , Joseph A. Libera , Jeffrey W. Elam , Shannon C. Riha
IPC分类号： C23C16/00 , C23C16/455 , C23C16/52
CPC分类号： C23C16/45525 , C23C16/52
摘要： The invention is directed to QCM measurements in monitoring ALD processes. Previously, significant barriers remain in the ALD processes and accurate execution. To turn this exclusively dedicated in situ technique into a routine characterization method, an integral QCM fixture was developed. This new design is easily implemented on a variety of ALD tools, allows rapid sample exchange, prevents backside deposition, and minimizes both the footprint and flow disturbance. Unlike previous QCM designs, the fast thermal equilibration enables tasks such as temperature-dependent studies and ex situ sample exchange, further highlighting the feasibility of this QCM design for day-to-day use. Finally, the in situ mapping of thin film growth rates across the ALD reactor was demonstrated in a popular commercial tool operating in both continuous and quasi-static ALD modes.

9. 发明授权

US10403464B2 3D printed micro channel plate, method of making and using 3D printed micro channel plate 有权
公开(公告)号：US10403464B2
公开(公告)日：2019-09-03
申请号：US15718407
申请日：2017-09-28
申请人： Robert G. Wagner , Michael J. Pellin , Howard Nicholson , Lei Xia , Jingbo Wang , Junqi Xie , Anil U. Mane , Jeffrey W. Elam
发明人： Robert G. Wagner , Michael J. Pellin , Howard Nicholson , Lei Xia , Jingbo Wang , Junqi Xie , Anil U. Mane , Jeffrey W. Elam
IPC分类号： B29C64/135 , H01J1/32 , B29C64/268 , B33Y10/00 , H01J9/12
摘要： The invention provides a gain device having a plurality of channels having a polygonal shape with four or more sides. The invention also provides a method for producing microchannel plates (MCPs) having the steps of providing a pre-polymer; and directing a laser over the pre-polymer into a pre-determined pattern. Also provided is method for efficiently 3D printing an object.

10. 发明授权

US08518179B1 Controlling the emissive properties of materials-improved lasers and upconversion materials 有权
标题翻译：控制材料改进的激光和上转换材料的发射性能
公开(公告)号：US08518179B1
公开(公告)日：2013-08-27
申请号：US13385661
申请日：2012-02-29
申请人： Thomas Proslier , Nicholas G. Becker , Michael J. Pellin , Jeffrey Klug , Jeffrey W. Elam
发明人： Thomas Proslier , Nicholas G. Becker , Michael J. Pellin , Jeffrey Klug , Jeffrey W. Elam
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B25/00 , C04B35/505 , C04B35/62218 , C04B35/62231 , C04B2235/3224 , C23C16/405 , C23C16/45531 , C23C16/45553 , C30B29/16 , H01S3/067 , H01S3/1608 , H01S3/163
摘要： Systems and methods for producing crystalline materials by atomic layer deposition, allowing for high control of localized doping. Such materials may be fibers or films suitable for use in optoelectronics and lasers.
摘要翻译：通过原子层沉积制备结晶材料的系统和方法，允许高度控制局部掺杂。这种材料可以是适用于光电子学和激光器的纤维或薄膜。

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