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    • 4. 发明授权
    • Data caching for mobile applications
    • 移动应用程序的数据缓存
    • US08788458B2
    • 2014-07-22
    • US12760233
    • 2010-04-14
    • Lance WatermanMichael HoBrian Keith LorenzEvan Peter IrelandHemal Pandya
    • Lance WatermanMichael HoBrian Keith LorenzEvan Peter IrelandHemal Pandya
    • G06F17/30G06F7/00
    • G06F17/30575G06F17/30902Y10S707/9994
    • Systems, methods, computer program product embodiments and combinations and sub-combinations thereof for data caching and cache synchronization are described herein. An embodiment includes comparing data in a cache with data stored at a data source and determining database operations needed to synchronize one or more partitions of the cache with the data source. Each cache partition is associated with mobile business object (MBO) metadata of a distinct mobile device and the determined database operations are executed to synchronize the partitions with the data source. By refreshing only those partitions which are pertinent to a given device, embodiments of the invention may increase parallelism by allowing multiple partitions to refresh concurrently. The embodiment further comprises reviewing a caching policy associated with the cache. The caching policy may be selected in a manner that reduces data traffic and redundant requests on the data source.
    • 本文描述了用于数据高速缓存和高速缓存同步的系统,方法,计算机程序产品实施例及其组合和子组合。 一个实施例包括将高速缓存中的数据与存储在数据源中的数据进行比较,并确定将高速缓存的一个或多个分区与数据源同步所需的数据库操作。 每个缓存分区与不同移动设备的移动业务对象(MBO)元数据相关联,并且执行确定的数据库操作以使分区与数据源同步。 通过仅刷新与给定设备相关的那些分区,本发明的实施例可以通过允许多个分区同时刷新来增加并行性。 该实施例还包括查看与高速缓存相关联的高速缓存策略。 可以以减少数据流的数据流量和冗余请求的方式来选择缓存策略。
    • 5. 发明授权
    • Integrated circuit memory device having reduced stress across large
on-chip capacitor
    • 集成电路存储器件在大的片上电容器上具有减小的应力
    • US5867421A
    • 1999-02-02
    • US958942
    • 1997-10-28
    • Michael HoDuy-Loan LeScott Smith
    • Michael HoDuy-Loan LeScott Smith
    • G11C5/14G11C11/404G11C11/4074G11C7/00
    • G11C5/141G11C11/404G11C11/4074G11C5/145
    • An integrated circuit memory device (10) includes a large on-chip capacitor (12) that has a high voltage plate and a low voltage plate. The large on-chip capacitor (12) stores charge for a positive voltage supply (VPP) for the integrated circuit memory device (10). The high voltage plate of the large on-chip capacitor (12) is connected to a node (NODE 1) for distributing charge from the large on-chip capacitor. A load (16) is connected to the node (NODE 1) and consumes charge from the high voltage plate to power operations of the integrated circuit memory device (10). The load (16) includes a memory array comprising a plurality of memory cells. The low voltage plate of the large on-chip capacitor (12) is connected to a capacitive voltage reference which has high capacitance and has a voltage-level greater than ground potential and less than the positive voltage supply. In one embodiment, the large on-chip capacitor is a storage/filter capacitor (12) for a boosted high voltage supply (VPP), and the capacitive voltage reference is a memory cell reference voltage (VPLT) which is also connected to a reference plate of memory cell capacitors (28) of the memory cells (20) in the memory array.
    • 集成电路存储器件(10)包括具有高压板和低压板的大片上电容器(12)。 大片上电容器(12)存储用于集成电路存储器件(10)的正电压源(VPP)的电荷。 大片上电容器(12)的高电压板连接到用于从大片上电容器分配电荷的节点(NODE 1)。 负载(16)连接到节点(节点1),并且消耗来自高压板的电荷以对集成电路存储器件(10)供电。 负载(16)包括包括多个存储单元的存储器阵列。 大片上电容器(12)的低压板连接到具有高电容并且具有大于地电位且小于正电压源的电压电平的电容性电压基准。 在一个实施例中,大片上电容器是用于升压高压电源(VPP)的存储/滤波电容器(12),并且电容性参考电压是也连接到参考电压的存储单元参考电压(VPLT) 在存储器阵列中的存储单元(20)的存储单元电容器(28)的板。
    • 6. 发明授权
    • Method of forming top corner rounding of shallow trenches in
semiconductor substrate
    • 在半导体衬底中形成浅沟槽顶角圆角的方法
    • US5858857A
    • 1999-01-12
    • US843719
    • 1997-04-17
    • Michael Ho
    • Michael Ho
    • H01L21/762H01L21/76
    • H01L21/76232Y10S438/978
    • A method of forming shallow trenches in a semiconductor substrate is provided. This method allows the thus-formed trenches to be shaped with a rounded top corner having a desired radius of curvature in accordance with actual requirements. From experiments, it is learned that the radius of curvature of the top corners of the trenches decreases linearly with the depth of a pre-trench formed by over-etching in the substrate. The relationship between radius of curvature and depth of pre-trench can be pre-established by experimentation. After that, the top corners of the shallow trenches in the substrate can be controlled to be shaped with a desired radius of curvature by adjusting the depth of the pre-trench based on the pre-established linear relationship. In this method, the substrate is removed to a predetermined depth corresponding to the desired radius of curvature of the top corner of the to-be-formed trench; then, thermal oxidation is performed on the substrate so as to form an oxide layer on the exposed area of the substrate; and finally, the oxide layer is removed. The empty space left by the removed oxide layer serves as the desired trench.
    • 提供了一种在半导体衬底中形成浅沟槽的方法。 这种方法允许如此形成的沟槽根据实际要求具有具有期望的曲率半径的圆角顶角成形。 从实验中可以看出,沟槽顶角的曲率半径随衬底中的过蚀刻形成的预先沟槽的深度而线性减小。 曲面半径与沟槽深度之间的关系可以通过实验预先确定。 之后,可以通过基于预先建立的线性关系调节前沟槽的深度,将基板中的浅沟槽的顶角控制成具有期望的曲率半径。 在该方法中,将衬底移除到对应于待形成沟槽的顶角的期望曲率半径的预定深度; 然后在衬底上进行热氧化,以在衬底的暴露区域上形成氧化物层; 最后,除去氧化物层。 由去除的氧化物层留下的空白空间用作所需的沟槽。
    • 10. 发明申请
    • DATA CACHING FOR MOBILE APPLICATIONS
    • 用于移动应用的数据缓存
    • US20110161290A1
    • 2011-06-30
    • US12760233
    • 2010-04-14
    • Lance WATERMANMichael HoBrian Keith LorenzEvan Peter IrelandHemal Pandya
    • Lance WATERMANMichael HoBrian Keith LorenzEvan Peter IrelandHemal Pandya
    • G06F17/30
    • G06F17/30575G06F17/30902Y10S707/9994
    • Systems, methods, computer program product embodiments and combinations and sub-combinations thereof for data caching and cache synchronization are described herein. An embodiment includes comparing data in a cache with data stored at a data source and determining database operations needed to synchronize one or more partitions of the cache with the data source. Each cache partition is associated with mobile business object (MBO) metadata of a distinct mobile device and the determined database operations are executed to synchronize the partitions with the data source. By refreshing only those partitions which are pertinent to a given device, embodiments of the invention may increase parallelism by allowing multiple partitions to refresh concurrently. The embodiment further comprises reviewing a caching policy associated with the cache. The caching policy may be selected in a manner that reduces data traffic and redundant requests on the data source.
    • 本文描述了用于数据高速缓存和高速缓存同步的系统,方法,计算机程序产品实施例及其组合和子组合。 一个实施例包括将高速缓存中的数据与存储在数据源中的数据进行比较,并确定将高速缓存的一个或多个分区与数据源同步所需的数据库操作。 每个缓存分区与不同移动设备的移动业务对象(MBO)元数据相关联,并且执行确定的数据库操作以使分区与数据源同步。 通过仅刷新与给定设备相关的那些分区,本发明的实施例可以通过允许多个分区同时刷新来增加并行性。 该实施例还包括查看与高速缓存相关联的高速缓存策略。 可以以减少数据流的数据流量和冗余请求的方式来选择缓存策略。