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1. 发明申请

US20070290190A1 Adapted LED Device With Re-Emitting Semiconductor Construction 有权
标题翻译：适应LED器件重新发射半导体结构
公开(公告)号：US20070290190A1
公开(公告)日：2007-12-20
申请号：US11755010
申请日：2007-05-30
申请人： Michael Haase , Catherine Leatherdale , Thomas Miller , Andrew Ouderkirk
发明人： Michael Haase , Catherine Leatherdale , Thomas Miller , Andrew Ouderkirk
IPC分类号： H01L29/06
CPC分类号： H01L33/08 , G02F1/133603 , H01L33/502
摘要： An article includes an LED that has an emitting surface. A reemitting semiconductor structure has an emitting surface and converts light emitted by the LED to light of a different wavelength. At least one of the emitting surfaces frustrates total internal reflection.
摘要翻译：一种物品包括具有发射表面的LED。再发射半导体结构具有发光面，将由LED发射的光转换为不同波长的光。至少一个发射表面使整个内部反射受阻。

2. 发明申请

US20070051967A1 ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR "WHITE" EMISSION 失效
标题翻译：适应短波长LED，用于多色，宽带或“白色”排放
公开(公告)号：US20070051967A1
公开(公告)日：2007-03-08
申请号：US11553784
申请日：2006-10-27
申请人： Thomas Miller , Michael Haase , Terry Smith , Xiaoguag Sun
发明人： Thomas Miller , Michael Haase , Terry Smith , Xiaoguag Sun
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要翻译：提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。势阱通常是量子阱。适配的LED可以是白色或近白色的LED灯。再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

3. 发明申请

US20060124938A1 Type II broadband or polychromatic LED's 有权
标题翻译： II型宽带或多色LED
公开(公告)号：US20060124938A1
公开(公告)日：2006-06-15
申请号：US11009218
申请日：2004-12-09
申请人： Thomas Miller , Michael Haase
发明人： Thomas Miller , Michael Haase
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/08 , H01L33/28
摘要： An LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%, and wherein at least one of the Type II interfaces is within a pn junction. Alternately, an LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%. The Type II interfaces may include interfaces from a layer which is an electron quantum well and not a hole quantum well, interfaces to a layer which is a hole quantum well and not an electron quantum well; and interfaces that satisfy both conditions simultaneously. The Type II interfaces may be within a pn or pin junction or not within a pn or pin junction. In the later case, emission from the Type II interfaces may be photopumped by a nearby light source. The LED may be a white or near-white light LED. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
摘要翻译：提供包括两个或更多个发光II型界面的LED，其中II型界面中的至少两个界面的转换能量不同于至少5％，或更通常至少10％，并且其中至少一种类型 II接口位于pn结内。或者，提供包括两个或更多个发光II型界面的LED，其中至少两个II型界面的跃迁能量不同于至少5％，或更通常至少10％。 II型界面可以包括来自作为电子量子阱而不是空穴量子阱的层的界面，其与作为空穴量子阱而不是电子量子阱的层接合; 和同时满足两个条件的接口。 II型接口可以在pn或pin结内，或者不在pn或pin结内。在后一种情况下，II型接口的发射可能被附近的光源照射。 LED可以是白色或近白色的LED灯。此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。

4. 发明申请

US20050280013A1 II-VI/III-V Layered construction on InP substrate 有权
标题翻译： II-VI / III-V InP基板上的分层结构
公开(公告)号：US20050280013A1
公开(公告)日：2005-12-22
申请号：US10871424
申请日：2004-06-18
申请人： Xiaoguang Sun , Thomas Miller , Michael Haase
发明人： Xiaoguang Sun , Thomas Miller , Michael Haase
IPC分类号： H01L31/0248 , H01S5/02 , H01S5/183 , H01S5/32 , H01L33/00
CPC分类号： H01S5/183
摘要： A layered construction is provided comprising an InP substrate and alternating layers of II-VI and III-V materials. The alternating layers of II-VI and III-V materials are typically lattice-matched or pseudomorphic to the InP substrate. Typically the II-VI material is selected from the group consisting of ZnSe, CdSe, BeSe, MgSe, ZnTe, CdTe, BeTe, MgTe, ZnS, CdS, BeS, MgS and alloys thereof, more typically selected from the group consisting of CdZnSe, CdMgZnSe, BeZnTe, and BeMgZnTe alloys, and is most typically CdxZn1-xSe where x is between 0.44 and 0.54. Typically the III-V material is selected from the group consisting of InAs, AlAs, GaAs, InP, AlP, GaP, InSb, AlSb, GaSb, and alloys thereof, more typically selected from the group consisting of InP, InAlAs, GaInAs, AlInGaAs and GaInAsP alloys, and is most typically InP or InyAl1-yAs where y is between 0.44 and 0.52. In one embodiment, the layered construction forms one or more distributed Bragg reflectors (DBR's). In another aspect, the present invention provides a layered construction comprising: an InP substrate and a distributed Bragg reflector (DBR) having a reflectivity of 95% or greater which comprises no more than 15 layer pairs of epitaxial semiconductor materials. In another aspect, the present invention provides a laser comprising a layered construction according to the present invention. In another aspect, the present invention provides a photodetector comprising a layered construction according to the present invention.
摘要翻译：提供了包括InP衬底和II-VI和III-V材料的交替层的分层结构。 II-VI和III-V材料的交替层通常与InP衬底晶格匹配或伪构。通常，II-VI材料选自ZnSe，CdSe，BeSe，MgSe，ZnTe，CdTe，BeTe，MgTe，ZnS，CdS，BeS，MgS及其合金，更典型地选自CdZnSe， CdMgZnSe，BeZnTe和BeMgZnTe合金，并且最典型的是Cd x Zn 1-x Se，其中x在0.44和0.54之间。通常，III-V材料选自InAs，AlAs，GaAs，InP，AlP，GaP，InSb，AlSb，GaSb及其合金，更典型地选自InP，InAlAs，GaInAs，AlInGaAs 和GaInAsP合金，并且最典型地是InP或Al y Al 1-y，其中y在0.44和0.52之间。在一个实施例中，分层结构形成一个或多个分布式布拉格反射器（DBR）。另一方面，本发明提供了一种分层结构，其包括：InP衬底和具有95％或更大的反射率的分布式布拉格反射器（DBR），其包括不超过15层的外延半导体材料。另一方面，本发明提供一种包括根据本发明的分层结构的激光器。另一方面，本发明提供了一种包括根据本发明的分层结构的光电检测器。

5. 发明申请

US20050135725A1 Laser submounts with standoff structures 审中-公开
标题翻译：具有隔离结构的激光底座
公开(公告)号：US20050135725A1
公开(公告)日：2005-06-23
申请号：US10744694
申请日：2003-12-23
申请人： Eric Hemmesch , Michael Haase , Thomas Miller
发明人： Eric Hemmesch , Michael Haase , Thomas Miller
IPC分类号： G02B6/42 , H01S5/02 , H01S5/022
CPC分类号： H01S5/02272 , G02B6/423 , H01S5/02236 , H01S5/02248
摘要： A submount for use in an optical assembly and an optical assembly comprising the submount, a laser diode and a second optical element are provided, where the submount comprises a substrate and a plurality of standoff structures. The standoff structures may be formed by patterned deposition onto the substrate. The substrate and standoff structures may be composed of different materials. Typically, the substrate comprises a material selected from the group consisting of: diamond, diamond-like materials, boron nitride and aluminum nitride. The submount may comprise solder layers adjacent to the standoff structures, which may be greater in height from the substrate than the standoff structures.
摘要翻译：提供了用于光学组件的基座和包括基座，激光二极管和第二光学元件的光学组件，其中，所述底座包括基板和多个间隔结构。隔离结构可以通过图案化沉积形成在基底上。衬底和间隔结构可以由不同的材料组成。通常，衬底包括选自金刚石，类金刚石材料，氮化硼和氮化铝的材料。底座可以包括与支架结构相邻的焊料层，其可以比离开结构更高于衬底的高度。

6. 发明申请

US20060124918A1 Polychromatic LED's and related semiconductor devices 无效
标题翻译：多色LED及相关半导体器件
公开(公告)号：US20060124918A1
公开(公告)日：2006-06-15
申请号：US11009241
申请日：2004-12-09
申请人： Thomas Miller , Michael Haase , Xiaoguang Sun
发明人： Thomas Miller , Michael Haase , Xiaoguang Sun
IPC分类号： H01L31/109
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0008 , H01L33/06
摘要： A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
摘要翻译：提供了一种半导体器件，其包括位于pn结内的第一势阱和不位于pn结内的第二势阱。势阱可能是量子阱。半导体器件通常是LED，并且可以是白色或近白色的光LED。半导体器件还可以包括不位于pn结内的第三势阱。半导体器件还可以包括围绕或紧密或紧邻第二或第三量子阱的吸收层。此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。

7. 发明申请

US20060124917A1 Adapting short-wavelength LED's for polychromatic, Broadband, or "white" emission 有权
标题翻译：适应短波长的LED用于多色，宽带或“白”发射
公开(公告)号：US20060124917A1
公开(公告)日：2006-06-15
申请号：US11009217
申请日：2004-12-09
申请人： Thomas Miller , Michael Haase , Terry Smith , Xiaoguang Sun
发明人： Thomas Miller , Michael Haase , Terry Smith , Xiaoguang Sun
IPC分类号： H01L29/06 , H01L33/00
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要翻译：提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。势阱通常是量子阱。适配的LED可以是白色或近白色的LED灯。再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

8. 发明授权

US09901828B2 Method for an augmented reality character to maintain and exhibit awareness of an observer 有权
公开(公告)号：US09901828B2
公开(公告)日：2018-02-27
申请号：US12963585
申请日：2010-12-08
申请人： Thomas Miller , George Weising
发明人： Thomas Miller , George Weising
IPC分类号： G09G5/00 , A63F13/655 , A63F13/5255 , A63F13/213 , A63F13/211 , A63F13/92 , G06T19/00
CPC分类号： A63F13/655 , A63F13/211 , A63F13/213 , A63F13/5255 , A63F13/92 , A63F2300/105 , A63F2300/1093 , A63F2300/204 , A63F2300/6607 , A63F2300/6676 , A63F2300/69 , G06F3/011 , G06F3/013 , G06F3/017 , G06F3/0304 , G06T19/006 , G09G2340/12 , G09G2340/125 , G09G2340/14 , G09G2354/00
摘要： Methods and systems for enabling an augmented reality character to maintain and exhibit awareness of an observer are provided. A portable device held by a user is utilized to capture an image stream of a real environment, and generate an augmented reality image stream which includes a virtual character. The augmented reality image stream is displayed on the portable device to the user. As the user maneuvers the portable device, its position and movement are continuously tracked. The virtual character is configured to demonstrate awareness of the user by, for example, adjusting its gaze so as to look in the direction of the portable device.

9. 发明授权

US08367990B2 Modular commercial microwave oven 有权
标题翻译：模块化商用微波炉
公开(公告)号：US08367990B2
公开(公告)日：2013-02-05
申请号：US12783938
申请日：2010-05-20
申请人： Thomas Miller , Robert A. Schulte , Kami Poppen , Deborah Parenza
发明人： Thomas Miller , Robert A. Schulte , Kami Poppen , Deborah Parenza
IPC分类号： H05B6/80
CPC分类号： H05B6/6426
摘要： A microwave oven cabinet is ergonomic designed to provide for both stacking and jigsaw-type back-to-back interlining of multiple units of the microwave ovens. In particular, the cabinet configuration advantageously establishes a reduced footprint, ergonomically designed microwave oven which can be effectively employed in various fields, including fast food chains wherein multiple such ovens may need to be functionally positioned in a limited area, while still being easily accessible.
摘要翻译：微波炉柜符合人体工程学设计，可提供多台微波炉的堆叠和拼图型背对背衬布。特别地，橱柜配置有利地建立了减少的占地面积，符合人体工程学设计的微波炉，其可以有效地用于各种领域，包括快餐食品链，其中多个这样的烤箱可能需要在有限的区域中功能地定位，同时仍然易于接近。

10. 发明授权

US08272325B2 Detonator free laser initiated blasting system 有权
标题翻译：雷管自由激光发射爆破系统
公开(公告)号：US08272325B2
公开(公告)日：2012-09-25
申请号：US12450137
申请日：2008-03-14
申请人： Richard John Goodridge , Rodney Wayne Appleby , David Olaf Johnson , Thomas Miller
发明人： Richard John Goodridge , Rodney Wayne Appleby , David Olaf Johnson , Thomas Miller
IPC分类号： F42B3/113
CPC分类号： F42D1/043 , F42B3/113
摘要： A detonator free blasting system, which comprises: a bulk explosive; a confined explosive; a fiber optic adapted to deliver laser light to the confined explosive, wherein the confined explosive is provided relative to the bulk explosive such that detonation of the confined explosive causes initiation of the bulk explosive.
摘要翻译：爆炸器自由爆破系统，包括：爆炸物; 限制爆炸物适用于向受限制的炸药传送激光的光纤，其中所述密封的爆炸物相对于大量爆炸物提供，使得限制的爆炸物的爆炸引起爆炸物的爆发。

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